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    MC14069UB GATE NO Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    DFE2016CKA-1R0M=P2 Murata Manufacturing Co Ltd Fixed IND 1uH 1800mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN55NJ0HD Murata Manufacturing Co Ltd Fixed IND 55nH 1500mA POWRTRN Visit Murata Manufacturing Co Ltd
    LQW18CNR56J0HD Murata Manufacturing Co Ltd Fixed IND 560nH 450mA POWRTRN Visit Murata Manufacturing Co Ltd
    DFE322520F-2R2M=P2 Murata Manufacturing Co Ltd Fixed IND 2.2uH 4400mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN4N9D0HD Murata Manufacturing Co Ltd Fixed IND 4.9nH 2600mA POWRTRN Visit Murata Manufacturing Co Ltd

    MC14069UB GATE NO Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MC74HCU04A

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C74HCU04A Hex Unbuffered Inverter High-Performance Silicon-Gate CMOS The MC74HCU04A is identical in pinout to the LS04 and the MC14069UB. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.


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    C74HCU04A MC74HCU04A MC14069UB. HC04A CU04A PDF

    MC14069UB

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C74HCU04 Hex Unbuffered In verter High-Performance Silicon-Gate CMOS N SUFFIX PLASTIC PACKAGE CASE 646-06 The MC74HCU04 is identical in pinout to the LS04 and the MC14069UB. The device inputs are compatible with standard CMOS outputs; with pullup


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    MC74HCU04 MC14069UB. DL129 MC74HCU04 MC14069UB PDF

    HC04a motorola

    Abstract: C74HCU04A HC04A LS04 motorola MC74HCU04A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C74HCU04A Product Preview Hex Unbuffered In verter High-Performance Silicon-Gate CMOS N SUFFIX PLASTIC PACKAGE CASE 646-06 The MC74HCU04A is identical in pinout to the LS04 and the MC14069UB. The device inputs are compatible with standard CMOS outputs; with pullup


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    C74HCU04A MC74HCU04A MC14069UB. HC04A DL129 MC74HCU04A HCU04 1/6HCU04 HCU04 HC04a motorola C74HCU04A LS04 motorola PDF

    C74HCU04

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C74HCU04 Hex Unbuffered Inverter High-Performance Silicon-Gate CMOS N SUFFIX PLASTIC PACKAGE CASE 6 4 6 -0 6 The MC74HCU04 is identical in pinout to the LS04 and the MC14069UB. The device inputs are compatible with standard CMOS outputs; with pullup


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    MC74HCU04 MC14069UB. MC74HCU04/D C74HCU04/D C74HCU04 PDF

    motorola hc04

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HCU04 Hex Unbuffered Inverter H igh Perform ance Silicon-Gate C M O S The MC54/74HCU04 is identical in pinout to the LS04 and the MC14069UB. The device inputs are com patible w ith standard CMOS outputs; w ith pullup resistors,


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    MC54/74HCU04 MC14069UB. MC54/74HCU04 HCU04 HCU04 motorola hc04 PDF

    74HCU04 st

    Abstract: No abstract text available
    Text: • MOTOROLA SEMICONDUCTOR b3b7ES2 □□‘ìlb S 'i SST ■ MOTM b lE ì> 'MOTOROLA SC LO G IC TECHNICAL DATA MC54/74HCU04 Hex Unbuffered Inverter High Performance Silicon-Gate CMOS J SUFFIX CERAMIC CASE 632-08 The MC54/74HCU04 is identical in pinout to the LS04 and the MC14069UB. The


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    MC54/74HCU04 MC54/74HCU04 MC14069UB. HCU04 HCU04 74HCU04 st PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC - C L O G I O DE ÎT~J L,3fc,7ESE G O ñ O a ñ ú 1 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HCU04 Hex Unbuffered Inverter High Performance Silicon-Gate CMOS J SUFFIX CERAMIC CASE 632-08 The MC54/74HCU04 is identical in pinout to the LS04 and the MC14069UB. The


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    MC54/74HCU04 MC14069UB. MC54/74HCU04 HCU04 HCU04 PDF

    14069U

    Abstract: MC14069UBCP MC14069UBCPG CD4069UB MC14069UB MC14069UBD MC14069UBDG
    Text: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


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    MC14069UB MC14069UB CD4069UB PDIP-14 MC14069UB/D 14069U MC14069UBCP MC14069UBCPG CD4069UB MC14069UBD MC14069UBDG PDF

    Untitled

    Abstract: No abstract text available
    Text: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


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    MC14069UB MC14069UB CD4069UB MC14069UB/D PDF

    14069ug

    Abstract: 14069ug datasheet MC14069UBCP 14069u MC14069UBCPG CD4069UB MC14069UB MC14069UBD MC14069UBDG 14069
    Text: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


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    MC14069UB MC14069UB CD4069UB SOIC-14 MC14069UB/D 14069ug 14069ug datasheet MC14069UBCP 14069u MC14069UBCPG CD4069UB MC14069UBD MC14069UBDG 14069 PDF

    14069UG

    Abstract: MC14069UBCPG 14069u MC14069UBC MC14069U
    Text: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


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    MC14069UB PDIP-14 SOIC-14 14069UG MC14069UBCP CD4069UB MC14069UB/D MC14069UBCPG 14069u MC14069UBC MC14069U PDF

    14069u

    Abstract: MC14069UBCP MC14069U MC14069UB MC14069UBD MC14069UBDR2 MC14069UBDT CD4069UB
    Text: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


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    MC14069UB MC14069UB CD4069UB MC14069UBCP r14525 MC14069UB/D 14069u MC14069UBCP MC14069U MC14069UBD MC14069UBDR2 MC14069UBDT CD4069UB PDF

    14069U

    Abstract: MC14069UBCP MC14069UB CD4069UB MC14069UBD MC14069UBDR2 MC14069UBDT MC14069UBDTEL
    Text: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


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    MC14069UB MC14069UB CD4069UB MC14069UBCP r14525 MC14069UB/D 14069U MC14069UBCP CD4069UB MC14069UBD MC14069UBDR2 MC14069UBDT MC14069UBDTEL PDF

    14069UG

    Abstract: MC14069UBCPG CD4069UB MC14069UB MC14069UBCP MC14069UBD MC14069UBDG
    Text: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


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    MC14069UB MC14069UB CD4069UB PDIP-14 MC14069UB/D 14069UG MC14069UBCPG CD4069UB MC14069UBCP MC14069UBD MC14069UBDG PDF

    14069U

    Abstract: MC14069UBCP CD4069UB MC14069U MC14069UB MC14069UBD MC14069UBDR2 MC14069UBDT
    Text: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


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    MC14069UB MC14069UB CD4069UB MC14069UBCP r14525 MC14069UB/D 14069U MC14069UBCP CD4069UB MC14069U MC14069UBD MC14069UBDR2 MC14069UBDT PDF

    Untitled

    Abstract: No abstract text available
    Text: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


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    MC14069UB PDIP-14 SOIC-14 14069UG MC14069UBCP CD4069UB MC14069UB/D PDF

    14069U

    Abstract: MC14069UBD MC14069UBFL1 MC14069UB gate no MC14069UBCP Enhancemen to-92
    Text: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


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    MC14069UB CD4069UB MC14069UBCP MC14069UBFEL MC14069UBFL1 MC14069UBCP MC14069UBD 51A-03 MC14069UBDR2 14069U MC14069UBD MC14069UBFL1 MC14069UB gate no Enhancemen to-92 PDF

    14069UG

    Abstract: MC14069UBCP MC14069UBCPG MC14069UBDG CD4069UB MC14069UB MC14069UBD
    Text: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


    Original
    MC14069UB MC14069UB CD4069UB SOIC-14 14069UG MC14069UBCP MC14069UBCPG MC14069UBDG CD4069UB MC14069UBD PDF

    14069UG

    Abstract: MC14069UBCP MC14069UBCPG CD4069UB MC14069UB MC14069UBD MC14069UBDG
    Text: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


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    MC14069UB MC14069UB CD4069UB SOIC-14 14069UG MC14069UBCP MC14069UBCPG CD4069UB MC14069UBD MC14069UBDG PDF

    14069U

    Abstract: MC14069UBCP CD4069UB
    Text: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


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    MC14069UB CD4069UB PDIP-14 MC14069UBCP SOIC-14 14069U MC14069UB CD4069UB PDF

    CD4069UB

    Abstract: MC14068B MC14069UB ceramic case 632
    Text: MOTOROLA MC14068B See Page 6-5 SEMICONDUCTOR TECHNICAL DATA MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high


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    MC14068B MC14069UB MC14069UB CD4069UB MC14069UB/D* MC14069UB/D CD4069UB MC14068B ceramic case 632 PDF

    mc14584b

    Abstract: 14584b mc14584bcp MM74Cl4
    Text: MC14584B Hex Schmitt Trigger The MC14584B Hex Schmitt Trigger is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14584B


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    MC14584B MC14069UB PDIP-14 MC14584BCP SOIC-14 14584B MC14069UB MC14584B MM74Cl4 PDF

    MM74Cl4

    Abstract: mc14584b MC14584BCP MC14584BD 14584b MC14069U MC14584BFR2
    Text: MC14584B Hex Schmitt Trigger The MC14584B Hex Schmitt Trigger is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14584B


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    MC14584B MC14069UB MC14584BCP 14584B MC14584BD 51A-03 MC14584BDR2 MM74Cl4 MC14584BD MC14069U MC14584BFR2 PDF

    MC14069UB equivalent

    Abstract: ceramic case 632
    Text: M O TO R O LA MC14106B HEX SC HM ITT TRIG GER The MC14106B hex Schmitt Trigger is constructed with MOS P-channel and N-channel enhancement mode devices in a single monolithic struc­ ture. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14106B may be used in place of


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    MC14106B MC14106B MC14069UB MC14584B CD40106B MM74C14 MC14584B MC14069UB equivalent ceramic case 632 PDF