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    PHILIPS MOSFET MARKING

    Abstract: BF998 TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate mcb351
    Text: • ^53^31 aG23b34 Mbl ■ APX N AMER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification date of issue April 1991 FEATURES • Short channel transistor with high ratio |YfS I/C* • Low noise gain controlled amplifier to 1 GHz.


    OCR Scan     		PDF BF998 OT143 PHILIPS MOSFET MARKING BF998 TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate mcb351

    PHILIPS MOSFET MARKING

    Abstract: BF998R UBB087
    Text: 00E3tM3 474 • Philips Semiconductors Data sheet status Product specification date of issue O ctob e r 1990 FEATURES • Short channel transistor with high ratio lYfs |/C S. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor


    OCR Scan     		PDF 00Z3fc BF998R OT143R PHILIPS MOSFET MARKING UBB087

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc