13006 TRANSISTOR
Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D
Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken
|
Original
|
PDF
|
PMBFJ620
OT363
MSC895
13006 TRANSISTOR
transistor 13006
E 13006
13006
MCD217
PMBFJ620
FET MARKING
13006 D
|
PMBFJ620,115
Abstract: No abstract text available
Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken
|
Original
|
PDF
|
PMBFJ620
OT363
PMBFJ620,115
|
pmbfj310
Abstract: No abstract text available
Text: 3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION
|
Original
|
PDF
|
PMBFJ308;
PMBFJ309;
PMBFJ310
PMBFJ308
pmbfj310
|
J310
Abstract: J309 application note J308 J310 applications J309 MCD212 MCD221 VHF Transistors
Text: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors
|
Original
|
PDF
|
|
PMBFJ620
Abstract: No abstract text available
Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken
|
Original
|
PDF
|
PMBFJ620
OT363
771-PMBFJ620-T/R
PMBFJ620
|
J310
Abstract: J309 J310 Application Note Transistor J310 J308 j310 equivalent MCD217 MCD212 MCD221
Text: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors
|
Original
|
PDF
|
|
marking code 10 sot23
Abstract: MCD217 PMBFJ310 MCD221 PMBFJ308 PMBFJ309 PMBFJ310,2
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Sep 11 Philips Semiconductors Product specification
|
Original
|
PDF
|
PMBFJ308;
PMBFJ309;
PMBFJ310
marking code 10 sot23
MCD217
PMBFJ310
MCD221
PMBFJ308
PMBFJ309
PMBFJ310,2
|
pmbfj310
Abstract: PMBFJ308 PMBFJ309 13403 PMBFJ310,2
Text: PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 03 — 23 July 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected
|
Original
|
PDF
|
PMBFJ308;
PMBFJ309;
PMBFJ310
MSC895
pmbfj310
PMBFJ308
PMBFJ309
13403
PMBFJ310,2
|