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    MCP 67 MV- A2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mb87020

    Abstract: tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB3776A mb501l MB506 ULTRA HIGH FREQUENCY PRESCALER
    Text: F U J I T S U Master Product Selector Guide FUJITSU MICROELECTRONICS, INC. Visit our web site for the latest information: http://www.fujitsumicro.com Customer Response Center: For semiconductor products, flat panel displays, and PC cards in the U.S., Canada and Mexico,


    Original     		SD-SG-20342-9/96 mb87020 tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB3776A mb501l MB506 ULTRA HIGH FREQUENCY PRESCALER PDF

    ISL6259

    Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor
    Text: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01


    Original     		PDF

    JESD21-C

    Abstract: E8870DH JESD79 mrf 245 E8870 JESD-21C 567-Ball
    Text: Intel 82870DH DDR Memory Hub DMH Datasheet Product Features • ■ ■ ■ ■ Two independent DDR DIMM channels per DMH. — 4 DIMMs per DDR Channel. — Registered PC1600 DDR DIMMs. Write Buffers to minimize large turnaround times. Pass through architecture for Read and


    Original     		82870DH PC1600 Tunnels88 E8870DH JESD21-C JESD79 mrf 245 E8870 JESD-21C 567-Ball PDF

    DAC89EX

    Abstract: dac86ex RBS 2111 ad42497 DAC0803 RBS 2101 ad429 AD427 AD4249 AD6422
    Text: ADSP-2100 Family DSP Microcomputers ADSP-21xx a SUMMARY 16-Bit Fixed-Point DSP Microprocessors with On-Chip Memory Enhanced Harvard Architecture for Three-Bus Performance: Instruction Bus & Dual Data Buses Independent Computation Units: ALU, Multiplier/ Accumulator, and Shifter


    Original     		16-Bit ADSP-2111 LooD6402 AD7013 AD9048 AD9058 AD6422AST AD6459ARS AD6459ARS-REEL DAC89EX dac86ex RBS 2111 ad42497 DAC0803 RBS 2101 ad429 AD427 AD4249 AD6422 PDF

    PL127J

    Abstract: Pl064j PL032J S71PL064JA0BAW0B S71PL064JA0 S71PL064JA0BAW07 S71PL064JA0BFW07 S71PL064JA0BFW0B mcp79
    Text: S71PL064JA0 Stacked Multi-Chip MCP Flash Memory and pSRAM 64 Megabit (4M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Flash Memory and 16 Megabit (1M x 16-bit) CMOS Pseudo Static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS MCP Features „ Cycling endurance: 1 million cycles per sector


    Original     		S71PL064JA0 16-bit) Am29F Am29LV 56-Ball S71PL064JA0 PL127J Pl064j PL032J S71PL064JA0BAW0B S71PL064JA0BAW07 S71PL064JA0BFW07 S71PL064JA0BFW0B mcp79 PDF

    MCP79MXT-B3

    Abstract: ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,CORNHOLE,K19 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE


    Original     		ISL10 ISL11 MCP79MXT-B3 ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A PDF

    MT29C4G48MAZAPAKQ-5

    Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,


    Original     		168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package PDF

    MT29F4G08ABA

    Abstract: MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96
    Text: Preliminary‡ Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,


    Original     		168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29F4G08ABA MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96 PDF

    S11108

    Abstract: C11208-01 C8841 H10570 Hamamatsu Photonics S11108 External Quantum Efficiency solar
    Text: NEWS 02 2009 LASER PRODUCTS PAGE 08 Gas detection: New Quantum Cascade Infrared Lasers SOLID STATE PRODUCTS PAGE 18 Infrared LED L10822, L10822-01, L10823, L10823-01 ELECTRON TUBE PRODUCTS PAGE 37 Flat panel PMT assemblies H10966A-100/H10966B-100 SYSTEMS PRODUCTS


    Original     		L10822, L10822-01, L10823, L10823-01 H10966A-100/H10966B-100 C11079-01 S11108 C11208-01 C8841 H10570 Hamamatsu Photonics S11108 External Quantum Efficiency solar PDF

    PPC750GL

    Abstract: PowerPC 750GL IBM25PPC750GL PowerPC 750 IBM25ppc750L PowerPC 750FX
    Text: IBM PowerPC 750GL RISC Microprocessor Revision Level DD1.X Datasheet Version: 1.0 June 1, 2005 Copyright and Disclaimer Copyright International Business Machines Corporation 2005 All Rights Reserved Printed in the United States of America June 2005.


    Original     		750GL PPC750GL PowerPC 750GL IBM25PPC750GL PowerPC 750 IBM25ppc750L PowerPC 750FX PDF

    SAMSUNG MCP

    Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
    Text: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6


    Original     		KAA00BB07M-DGUV 16Mx16) 4Mx16) 4Mx16x4Banks) 256Mb 137-Ball 80x14 SAMSUNG MCP KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm PDF

    Flash MCp nand DRAM 107-ball

    Abstract: dq15d SAMSUNG MCP 130 MCP NAND DDR 512M nand mcp SAMSUNG MCp nand ddr KAG00J007M-FGG2 UtRAM Density nand mcp samsung ka
    Text: Advance Preliminary MCP MEMORY KAG00J007M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 October 2003 Advance Preliminary MCP MEMORY KAG00J007M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		KAG00J007M-FGG2 256Mb 32Mx8) 4Mx16x4Banks) 107-Ball 80x13 Flash MCp nand DRAM 107-ball dq15d SAMSUNG MCP 130 MCP NAND DDR 512M nand mcp SAMSUNG MCp nand ddr KAG00J007M-FGG2 UtRAM Density nand mcp samsung ka PDF

    PWA with 555

    Abstract: S71PL064JA0BAW0B Spansion s29pl127j PL032J S71PL064JA0 S71PL064JA0BAW07 S71PL064JA0BFW07
    Text: S71PL064JA0 Stacked Multi-Chip MCP Flash Memory and pSRAM 64 Megabit (4M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Flash Memory and 16 Megabit (1M x 16-bit) CMOS Pseudo Static RAM ADVANCE DISTINCTIVE CHARACTERISTICS MCP Features „ Cycling endurance: 1 million cycles per sector


    Original     		S71PL064JA0 16-bit) Am29F Am29LV 56-Ball S71PL064JA0 PWA with 555 S71PL064JA0BAW0B Spansion s29pl127j PL032J S71PL064JA0BAW07 S71PL064JA0BFW07 PDF

    SAMSUNG MCP

    Abstract: KAG00E007M-FGGV UtRAM Density samsung nor nand ddr mcp samsung mcp 107-ball Flash MCp nand DRAM 107-ball
    Text: Advance Preliminary MCP MEMORY KAG00E007M-FGGV MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 September 2003 Advance Preliminary MCP MEMORY KAG00E007M-FGGV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		KAG00E007M-FGGV 256Mb 16Mx16) 4Mx16x4Banks) 107-Ball 80x13 SAMSUNG MCP KAG00E007M-FGGV UtRAM Density samsung nor nand ddr mcp samsung mcp 107-ball Flash MCp nand DRAM 107-ball PDF

    MPC750

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • • • • 12.4 SPECint95, 8.4 SPECfp95 @ 266 MHz TSPC750A with 1 MB L2 @ 133 MHz 11.5 SPECint95, 6.9 SPECfp95 @ 266 MHz (TSPC740A) 488 MIPS @ 266 MHz Selectable Bus Clock (11 CPU Bus Dividers up to 8x)


    Original     		SPECint95, SPECfp95 TSPC750A) TSPC740A) 64-bit 32-bit TSPC750A TSPC740A MPC750 PDF

    Untitled

    Abstract: No abstract text available
    Text: S71PL129JC0/S71PL129JB0/ S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE Distinctive Characteristics


    Original     		S71PL129JC0/S71PL129JB0/ S71PL129JA0 16-bit) S71PL129J S29PL129J S71PL129Jxx PDF

    MT29F4G08ABA

    Abstract: MT29C4G48 ELPIDA LPDDR2 POP MT29C4G48MAZBAAKQ-5
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAPŒ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,


    Original     		168-Ball MT29C4G48MAYBAAKQ-5 MT29C4G48MAZBAAKQ-5 MT29C4G96MAYBACJG-5 MT29C4G96MAZBACJG-5 MT29C8G96MAYBADJV-5 MT29C8G96MAZBADJV-5 MT29F4G08ABA MT29C4G48 ELPIDA LPDDR2 POP PDF

    Flash MCp nand DRAM 107-ball

    Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
    Text: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		KAG00H008M-FGG2 256Mb 32Mx8) 4Mx16x4Banks) 128Mb 107-Ball 80x13 Flash MCp nand DRAM 107-ball SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density PDF

    SAMSUNG MCP

    Abstract: 7a7l MCP MEMORY K5D1G58KCM-D090 nand sdram mcp
    Text: Preliminary MCP MEMORY K5D1G58KCM-D090 Document Title Multi-Chip Package MEMORY 1G Bit 128Mx8 Nand Flash / 256M Bit (2Mx32x4Banks) Mobile SDRAM Revision No. History Draft Date 0.0 Initial issue. - 1Gb NAND A-Die_ Ver 0.3 - 256Mb Mobile SDRAM F-Die_Ver 1.1


    Original     		K5D1G58KCM-D090 128Mx8) 2Mx32x4Banks) 256Mb 119-Ball SAMSUNG MCP 7a7l MCP MEMORY K5D1G58KCM-D090 nand sdram mcp PDF

    SAMSUNG MCP

    Abstract: MCP NOR FLASH SDRAM MCP 67 MV- A2 UtRAM Density SAMSUNG mcp Reliability spec
    Text: Preliminary MCP MEMORY KAA00B606A Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/64M Bit(4Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. July 18, 2002


    Original     		KAA00B606A 16Mx16) Flash/64M 4Mx16) UtRAM/128M 2Mx16x4Banks) 90/100ns 127-Ball 80x12 SAMSUNG MCP MCP NOR FLASH SDRAM MCP 67 MV- A2 UtRAM Density SAMSUNG mcp Reliability spec PDF

    MCP 67 MV- A2

    Abstract: K5D1G13ACD SAMSUNG MCP MCP MEMORY K5D1G K5D1G1 K5D1G13 SAMSUNG MCP Qualification Report 137FBGA k5d1g13a
    Text: Target K5D1G13ACD-D075 MCP MEMORY MCP Specification 1Gb NAND Flash + 512Mb Mobile SDRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K5D1G13ACD-D075 512Mb K5D1G13ACD-D075000 SG2002063-01 MCP 67 MV- A2 K5D1G13ACD SAMSUNG MCP MCP MEMORY K5D1G K5D1G1 K5D1G13 SAMSUNG MCP Qualification Report 137FBGA k5d1g13a PDF

    SAMSUNG MCP

    Abstract: Flash MCp nand DRAM 107-ball K5D5657DCM-F015 SAMSUNG 256Mb mcp Qualification Reliability dq15d samsung mcp 107-ball
    Text: Preliminary MCP MEMORY K5D5657DCM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.0 June 2003 Preliminary MCP MEMORY K5D5657DCM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		K5D5657DCM-F015 256Mb 32Mx8) 4Mx16x4Banks) 107-Ball SAMSUNG MCP Flash MCp nand DRAM 107-ball K5D5657DCM-F015 SAMSUNG 256Mb mcp Qualification Reliability dq15d samsung mcp 107-ball PDF

    Samsung MCP

    Abstract: MCP NAND K5D5657ACM K5D5657ACM-F015 MCP 256M nand samsung mobile DDR
    Text: Advance Preliminary MCP MEMORY K5D5657ACM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Preliminary MCP MEMORY K5D5657ACM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		K5D5657ACM-F015 256Mb 32Mx8) 4Mx16x4Banks) 128Mb 107-Ball 80x13 Samsung MCP MCP NAND K5D5657ACM K5D5657ACM-F015 MCP 256M nand samsung mobile DDR PDF

    SAMSUNG MCP

    Abstract: F407 KBE00D002M-F407 samsung "nor flash" sensing UtRAM Density 137FBGA
    Text: Advance Preliminary MCP MEMORY KBE00D002M-F407 Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 128M Bit (2Mx16x4Banks) Mobile SDRAM*2 Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. - 512M NAND DDP C-Die_ ver 1.0


    Original     		KBE00D002M-F407 16Mx16) 2Mx16x4Banks) 128Mb 137-Ball 80x14 SAMSUNG MCP F407 KBE00D002M-F407 samsung "nor flash" sensing UtRAM Density 137FBGA PDF