Untitled
Abstract: No abstract text available
Text: FH105A Ordering number : ENA1126A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH105A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting
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FH105A
ENA1126A
FH105A
2SC5245A,
250mm2Ã
026A-005
SC-88,
SC-70-6,
OT-363
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smd transistor marking 12W
Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
Text: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3
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MCH4009
17dB2GHz
SC-72
SC-43
SC-51
O-226
SC-71
O-126
O-92MOD
smd transistor marking 12W
SMD transistor Marking 13w
SMD type Marking 13w
SPM5001
SOT89 PNP marking GA
ec3h04b
smd transistor 12W 52
SMA4205
6c 6pin
SGD103
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SC 708-4
Abstract: MCP6 Marking sanyo
Text: FH102A Ordering number : ENA1125A SANYO Semiconductors DATA SHEET FH102A NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting
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ENA1125A
FH102A
FH102A
2SC5226A,
A1125-8/8
SC 708-4
MCP6 Marking sanyo
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Untitled
Abstract: No abstract text available
Text: FH102A Ordering number : ENA1125A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting
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FH102A
ENA1125A
FH102A
2SC5226A,
A1125-8/8
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marking S2W
Abstract: MCP6 Marking sanyo
Text: Ordering number : ENN0000 SMA4203 Si Monolithic Linear IC SMA4203 Oscillator IC for Laser Diode Noise Suppression Applications Preliminary Package Dimensions unit : mm 0000 0.25 5 0.15 4 0 to 0.1 1.25 2.1 6 0.2 0.425 [SMA4203] 0.2 0.425 3 0.9 1 2 0.65 2.0
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ENN0000
SMA4203
SMA4203]
marking S2W
MCP6 Marking sanyo
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SPM3203
Abstract: MCP6 Marking sanyo
Text: Ordering number : ENN6677 SPM3203 GaAS MMIC SPM3203 SPDT Switch Features • • Package Dimensions Control voltage : +3/0V. Miniature package achieved using the MCP. unit : mm 1297 0.25 5 0.15 4 0 to 0.1 1.25 2.1 6 0.2 0.425 [SPM3203] 0.2 0.425 3 1 : CTL2
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ENN6677
SPM3203
SPM3203]
SPM3203
MCP6 Marking sanyo
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marking S2W
Abstract: icc 312
Text: Ordering number : ENN0000 SMA4203 Si Monolithic Linear IC SMA4203 Oscillator IC for Laser Diode Noise Suppression Applications Preliminary Package Dimensions unit : mm 0000 0.25 5 0.15 4 0 to 0.1 1.25 2.1 6 0.2 0.425 [SMA4203] 0.2 0.425 3 1 : LC 2 : GND 3 : OPEN
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ENN0000
SMA4203
SMA4203]
marking S2W
icc 312
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Untitled
Abstract: No abstract text available
Text: SMA4201 Ordering number : ENN8408 SMA4201 Si Monolithic Linear IC High Frequency Oscillator IC for Laser Diode Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Supply Voltage VCC 6.0 V Circuit Current 30 mA Allowable Power Dissipation
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ENN8408
SMA4201
420MHz
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SMA4201
Abstract: No abstract text available
Text: SMA4201 Ordering number : ENN8408 SMA4201 Si Monolithic Linear IC High Frequency Oscillator IC for Laser Diode Specifications Absolute Maximum Ratings at Ta=25°C Parameter Supply Voltage Symbol Conditions Ratings VCC ICC Circuit Current Allowable Power Dissipation
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SMA4201
ENN8408
420MHz
SMA4201
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SMA4205
Abstract: marking S1T
Text: SMA4205 Ordering number : ENN8409 SMA4205 Si Monolithic Linear IC High Frequency Oscillator IC for Laser Diode Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Supply Voltage VCC 6.0 V Circuit Current 50 mA Allowable Power Dissipation
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SMA4205
ENN8409
400MHz
SMA4205
marking S1T
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SMA4201
Abstract: No abstract text available
Text: Ordering number : ENN0000 SMA4201 Si Monolithic Linear IC SMA4201 Oscillator IC for Laser Diode Noise Suppression Applications Preliminary Package Dimensions unit : mm 0000 0.25 5 0.15 4 0 to 0.1 1.25 2.1 6 0.2 0.425 [SMA4201] 0.2 0.425 3 1 : LC 2 : GND 3 : OPEN
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ENN0000
SMA4201
SMA4201]
SMA4201
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MCP6 Marking sanyo
Abstract: No abstract text available
Text: Ordering number : ENN6452 SPM3202 GaAs MMIC SPM3202 SPDT Switch Features and Applications • • Package Dimensions Control voltage +3 / 0V. MCP package. unit : mm 1297 0.25 6 6 OUT2 2 5 3 4 0.15 4 0 to 0.1 1 2 0.65 2.0 IN 3 0.9 OUT1 1 : CTL2 2 : IN 3 : CTL1
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ENN6452
SPM3202
SPM3202]
56GHz
MCP6 Marking sanyo
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FH102A
Abstract: 2SC5226A ITR10753 ITR10754 ITR10755 ITR10756 ZO 607 transistor
Text: FH102A Ordering number : ENA1125 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency
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FH102A
ENA1125
FH102A
2SC5226A,
A1125-6/6
2SC5226A
ITR10753
ITR10754
ITR10755
ITR10756
ZO 607 transistor
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Untitled
Abstract: No abstract text available
Text: FH102A Ordering number : ENA1125 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency
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ENA1125
FH102A
FH102A
2SC5226A,
A1125-6/6
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SMA4205
Abstract: No abstract text available
Text: SMA4205 Ordering number : ENN8409 SMA4205 Si Monolithic Linear IC High Frequency Oscillator IC for Laser Diode Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Supply Voltage Conditions Ratings VCC ICC Circuit Current Allowable Power Dissipation
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SMA4205
ENN8409
400MHz
SMA4205
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transistor c 5855
Abstract: ZO 607 transistor amp 0.1ghz 2SC5226 FH102
Text: Ordering number : EN5874 NPN Epitaxial Planar Silicon Composite Transistor FH102 High-Frequency Low-Noise Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the MCP unit: mm package currently in use, improving the mounting
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EN5874
FH102
2149-MCP6
FH102
2SC5226,
FH102]
transistor c 5855
ZO 607 transistor
amp 0.1ghz
2SC5226
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TA-1706
Abstract: 2SC4867 FH103 TA1706
Text: Ordering number:ENN6217 NPN Epitaxial Planar Silicon Composite Transistor FH103 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2149 [FH103] 0.25 6 5 4 E2 1 2 0.65 2.0 C1 3 Tr2 E1 1 : Collector1 2 : Emitter1
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ENN6217
FH103
FH103]
FH103
2SC4867,
TA-1706
2SC4867
TA1706
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MARKING 201
Abstract: j200 transistor SANYO SS 1001 2SC4867 2SC4871 FH201
Text: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 VCO OSC Circuit Applications Package Dimensions unit:mm 2149 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Base1 SANYO : MCP6
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ENN6117
FH201
FH201]
2SC4871)
2SC4867)
FH201
2SC4871
2SC4867,
MARKING 201
j200 transistor
SANYO SS 1001
2SC4867
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SPD221P
Abstract: SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221
Text: S A f/ Y O GaAs Di odes 1 j f c GaAs Schot tky Bar-r-ier Di odes Packaged Type The Sanyo SPD Series are packaged type GaAs Schottky barrier diodes designed for converters, modulators,detectors that can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18.0GHz).
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SGD102,
SGD102T)
Ratings-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
SPD221P
SPD221R
sanyo transistor
SGD102
SGD102T
SPD121
MCP6 Marking sanyo
SPD121P
SPD122P
SPD221
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SB002-15SPA
Abstract: SB005-09CP SB005-09SPA SB01-15NP SB02-09CP SB02-09NP SB02-15 SB05-09 SB10-09T S0T143
Text: SAfiYO Small-Signal High-Voltage Schottky Barri er Diodes 2 S i n g l e T y p e S{: Mounted on ceramic board (250mm' X 0.8mm) ☆: Mounted on Cu foil (16mm‘X 0.2mmt) on glass epoxy board 0:Refer to the individual catalogue of each product because the center part of PCP outline is completely
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250mm'
T0-126
SB005-09CP
SB02-09CP
SB10-09PCSJ
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
SB002-15SPA
SB005-09SPA
SB01-15NP
SB02-09NP
SB02-15
SB05-09
SB10-09T
S0T143
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F527S
Abstract: 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553
Text: SAfiYO NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES lt>2 Newly developed SANYO very high-frequency tra n sis to rs can be used fo r various ap p licatio n s such as fo r communication equipment and measuring equipment. They are superior when used with low voltage drive.
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Cas-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
F527S
2sc55
marking WMM
2SC5488
2SC4853
2SC4931
2SC5277
2SC5374
2SC5489
2SC553
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svc253
Abstract: MARKING 1ED 5176 to-220 PCP MOSFET MCP6 Marking sanyo
Text: VARIABLE-CAPACITANCE DIODES IOCAP SA0YO Low-volt age and high-voltage variable capacitance diodes are available for both of AM electronic tuning use and FM electronic tuning use. gg F e a t u r e s ♦ High capacitance ratio ♦ Good linearity ♦ Small-sized package
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SVC321SPA
SVC323
SVC325
SVC34KVA)
SVC342
SVC343
SVC344
SVC345
SVC346
SVC347CVI)
svc253
MARKING 1ED
5176 to-220
PCP MOSFET
MCP6 Marking sanyo
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IRF 850 mosfet
Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Text: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.
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SC-63
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
IRF 850 mosfet
Mini size of Discrete semiconductor elements
2SJ335
cp 035 sanyo
CP 022 ND
fa214
8ROM
2SK2637
marking 85m ok
2SJ382
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6452 | GaAs MMIC SPM3202 ISAßfOi SPDT Switch Features and Applications Package Dimensions • Control voltage +3 / OV. • MCP package. unit : mm 1297 [SPM3202] Application Circuit 0.15- CTL2 ino—i HH D 1H D— =L 5 I CTL1 (ft |-°
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ENN6452
SPM3202
SPM3202]
56GHz
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