MCR100-8
Abstract: MCR100-7 Mcr100
Text: Thyristors Small Signal Diode DO-92 A B Features G E Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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100-4/MCR100-5/MCR100-6/MCR100-7/MCR100-8
DO-92
MIL-STD-202,
19gram
C/10s
MCR100-8
MCR100-7
Mcr100
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MCR100
Abstract: MCR100-6 MCR100-8 MCR100-6 circuit mcr-100 MCR100-7 MCR100-5 MCR100-4 MCR100-3
Text: Thyristors Small Signal Diode DO-92 A B Features G E Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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100-4/MCR100-5/MCR100-6/MCR100-7/MCR100-8
DO-92
MIL-STD-202,
19gram
C/10s
MCR100-3
MCR100-4
MCR100
MCR100-6
MCR100-8
MCR100-6 circuit
mcr-100
MCR100-7
MCR100-5
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MCR100-6
Abstract: MCR100-8 MCR100-8 thyristor MCR100 MCR100-6 circuit
Text: MOTOROLA Order this document by MCR100/D SEMICONDUCTOR TECHNICAL DATA MCR100-6 MCR100-8 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Motorola preferred devices PNPN devices designed for high volume, line-powered consumer applications such
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MCR100/D
O-226AA
MCR100-6
MCR100-8
MCR100-8
MCR100-8 thyristor
MCR100
MCR100-6 circuit
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MCR100-8
Abstract: MCR100-8 thyristor MCR100-6 100-6
Text: MOTOROLA Order this document by MCR100/D SEMICONDUCTOR TECHNICAL DATA MCR100-6 MCR100-8 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Motorola preferred devices PNPN devices designed for high volume, line-powered consumer applications such
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MCR100/D
O-226AA
MCR100-6
MCR100-8
O-226AA)
MCR100-8
MCR100-8 thyristor
MCR100-6 100-6
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MCR100-6
Abstract: MCR100-8 mcr100-6 p mcr100 MCR1006 "Silicon Controlled Rectifiers" MCR100-6 Datasheet transistor mcr100-6 MCR100 8 mcr-100
Text: MCR100-6/MCR100-8 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors P b Lead Pb -Free SCRs 0.8 A RMS 400/600 Voltage A 1.Cathode 2.Gate 3.Anode G C 1 2 3 TO-92 Maximum Ratings (TA=25°C unless otherwise noted) Symbol MCR100-6 MCR100-8
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MCR100-6/MCR100-8
MCR100-6
MCR100-8
30-Jan-07
270TYP
MCR100-6
MCR100-8
mcr100-6 p
mcr100
MCR1006
"Silicon Controlled Rectifiers"
MCR100-6 Datasheet
transistor mcr100-6
MCR100 8
mcr-100
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MCR100-6
Abstract: MCR100 MCR100-8 thyristor transistor mcr100-6 mcr 100 MCR1006 MCR-100 mcr100-8 mcr-100 6 mcr 100-8
Text: MCR100-6/100-8 MCR 100- 6, - 8 TO-92 Silicon Planar PNPN Thyristor 1. KATHODE FEATURES 2. GATE 3. ANODE Current-IGT: 200 µA ITRMS: 0.8 A VDRM: MCR100-6: 400 V MCR100-8: 600 V 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
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MCR100-6/100-8
MCR100-6:
MCR100-8:
MCR100-6
MCR100-8
MCR100-6
MCR100
MCR100-8 thyristor
transistor mcr100-6
mcr 100
MCR1006
MCR-100
mcr100-8
mcr-100 6
mcr 100-8
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MCR100-6
Abstract: MCR100 Triac MCR100-8 MCR100-8 MCR100-8 thyristor TO92 triac 0,8 a UA80 TO92 triac MCR1006
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MCR 100- 6,- 8 TO-92 Silicon Planar PNPN Thyristor MAIN FEATURES Symbol value unit IT RMS 0.8 A 2.GATE MCR100-6 400 MCR100-8 600 TJ Junction Temperature -40 to 125 ℃
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MCR100-6
MCR100-8
MCR100-6)
MCR100-6
MCR100
Triac MCR100-8
MCR100-8
MCR100-8 thyristor
TO92 triac 0,8 a
UA80
TO92 triac
MCR1006
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MCR100-8
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Thyristors MCR 100- 6,- 8 TO-92 Silicon Planar PNPN Thyristor MAIN FEATURES Symbol value unit IT RMS 0.8 A MCR100-6 400 MCR100-8 600 Tj Junction Temperature -40 ~ 125 ℃ Tstg Storage Temperature
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MCR100-6
MCR100-8
MCR100-6)
MCR100-8
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MCR100-6
Abstract: MCR100-8 mcr100 MCR100-8 thyristor transistor mcr100-8 MCR1006 a115 mcr 100
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MCR 100- 6, - 8 TO-92 Silicon Planar PNPN Thyristor 1. KATHODE FEATURES 2. GATE Current-IGT: 200 µA ITRMS: 0.8 A VDRM: 3. ANODE MCR100-6: 400 V MCR100-8: 600 V 1 2 3
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MCR100-6:
MCR100-8:
MCR100-6
MCR100-8
MCR100-6
MCR100-8
mcr100
MCR100-8 thyristor
transistor mcr100-8
MCR1006
a115
mcr 100
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MCR100-6
Abstract: MCR100-8 MCR100-4
Text: MCRlOO-4 MCR100-6 MCR100-8 CRO 0.8A SILICON CONTROLLED RECTIFIERS * Driven directly with IC and MOS device. TO-92 * Feature proprietary, void-free glass passiviated chips. * Available in voltage ratings from 100 to 600 volts VDRM and VRRM * Sensitive gate trigger current.
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MCR100-6
MCR100-8
MCR100-4
MCR100-8
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MCR100-6
Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors MCR 100- 6, - 8 TO-92 Silicon Planar PNPN Thyristor 1. KATHODE FEATURES 2. GATE Current-IGT: 200 µA ITRMS: 0.8 A VDRM: 3. ANODE MCR100-6: 400 V MCR100-8: 600 V 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
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MCR100-6:
MCR100-8:
MCR100-6
MCR100-8
MCR100-6
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mcr 100
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors MCR 100- 6, - 8 TO-92 Silicon Planar PNPN Thyristor 1. KATHODE FEATURES 2. GATE Current-IGT: 200 µA ITRMS: 0.8 A VDRM: 3. ANODE MCR100-6: 400 V MCR100-8: 600 V 1 2 3 Operating and storage junction temperature range
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MCR100-6:
MCR100-8:
MCR100-6
MCR100-8
MCR100-6
mcr 100
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Untitled
Abstract: No abstract text available
Text: MCRlOO-4 MCR100-6 MCR100-8 CRO 0.8A SILICON CONTROLLED RECTIFIERS * Driven directly with IC and MOS device. * Feature proprietary, void-free glass passiviated chips. * Available in voltage ratings from 100 to 600 volts TO-92 VDRM and VRRM * Sensitive gate trigger current.
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MCR100-6
MCR100-8
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MCR100-6/8 FORWARD INTERNATIONAL ELECTRONICS LTD. Thyristor TECHNICAL DATA AC POWER CONTROL APPLICATION Package: TO-92 *Repetitive Peak Off-state Voltage :V DRM=400V/600V *R.M.S On-state Current : I T RMS =0.8A ABSOLUTE MAXIMUM RATINGS at Tamb=250C
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MCR100-6/8
00V/600V
MCR100-6)
MCR100-8)
40urrent
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR MCR100-8 SCRs 0.25 AMPERES RMS 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors SOT-23 FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other logic Circuits SOT-23 DIM. MIN. MAX. A 0.89
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MCR100-8
OT-23
JESD22-A102-C,
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Untitled
Abstract: No abstract text available
Text: , One. «_/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Thyristors MCR100-8 FEATURES • • • • • With TO-92 package Sensitive gate trigger current Low reverse and forward blocking current
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MCR100-8
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MCR100-8
Abstract: POWER TRANSISTORS 600v VDRM600V VRRM600V
Text: INCHANGE Thyristors MCR100-8 FEATURES •With TO-92 package ·Sensitive gate trigger current ·Low reverse and forward blocking current ·Low holding current QUICK REFERENCE DATA SYMBOL MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak off-state voltage
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MCR100-8
MCR100-8
POWER TRANSISTORS 600v
VDRM600V
VRRM600V
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MCR100-8
Abstract: MCR100-4 MCR100-6
Text: MCRlOO-4 MCRlOO-6 MCR100-8 0.8A SILICON CONTROLLED RECTIFIERS * Driven directly with IC and MOS device. * Feature proprietary, void-free glass passiviated chips. * Available in voltage ratings from 100 to 600 volts TO-92 VDRM and VRRM * Sensitive gate trigger current.
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MCR100-8
MCR100-4
MCR100-6
100ohm
May-98
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BT131 REPLACEMENT
Abstract: replacement S2025L 2N5754 replacement 2N3940 B149D mac210 2N4103 BTA16-600 X00602MA_1AA2 Z0110M
Text: Index and Cross Reference The following table represents a cross reference guide for all Thyristors that ON Semiconductor manufactures. Where ON Semiconductor part numbers are shown in bold the device is a form, fit, and function replacement for the industry part
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T05B310T3
MMT05B310T3
MMT10B230T3
MMT10B260T3
MMT10B310T3
MCR100
MCR22
BT131 REPLACEMENT
replacement S2025L
2N5754 replacement
2N3940
B149D
mac210
2N4103
BTA16-600
X00602MA_1AA2
Z0110M
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MCR100
Abstract: No abstract text available
Text: MCR100 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.
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MCR100
O-226AA
MCR100/D
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MCR100-6 SCR 400 V 0,8 A
Abstract: MCR100 mcr100-6 p MCR100-6RLRM MCR100-6RLRAG
Text: MCR100 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.
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MCR100
O-226AA
MCR100-6 SCR 400 V 0,8 A
mcr100-6 p
MCR100-6RLRM
MCR100-6RLRAG
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MCR100-6 SCR 400 V 0,8 A
Abstract: MCR100-6G MCR100 mcr100-6 p SCR MCR100-8G 01397
Text: MCR100 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.
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MCR100
O-226AA
MCR100/D
MCR100-6 SCR 400 V 0,8 A
MCR100-6G
mcr100-6 p
SCR MCR100-8G
01397
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3rlg
Abstract: FAN motor MCR100-6 SCR 400 V 0,8 A MCR100-006
Text: MCR100 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.
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MCR100
O-226AA
MCR100-003
MCR100-004
MCR100-006
MCR100-008
MCR100-3RL
MCR100-3RLG
MCR100-6RL
3rlg
FAN motor
MCR100-6 SCR 400 V 0,8 A
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MCR100
Abstract: No abstract text available
Text: MCR100 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.
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MCR100
O-226AA
MCR100/D
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