T23B
Abstract: differential manchester encoder 8023A Crystal Oscillator TXC Seeq Technology 10BASE2 10BASE5 Manchester code 8003 "pin compatible"
Text: 8023A 8023A MCC Manchester Code Converter TM 92123 Features Note: Check for latest Data Sheet revision before starting any designs. • Compatible with IEEE 802.3 /Ethernet 10BASE5 , IEEE802.3/CHEAPERNET (10BASE2) and Ethernet Rev. 1 Specifications ■ Compatible with 8003 ELDC , 8005 Advanced
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10BASE5)
IEEE802
10BASE2)
MD400022/D
T23B
differential manchester encoder
8023A
Crystal Oscillator TXC
Seeq Technology
10BASE2
10BASE5
Manchester code
8003 "pin compatible"
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PDF
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T23B
Abstract: RXC Series t23b mos TXC oscillator 10BASE2 10BASE5 T-25 8020 equivalent T17b D8020
Text: 8020 8020 MCC Manchester Code Converter TM 89305 Features Note: Check for latest Data Sheet revision before starting any designs. • Compatible with IEEE 802.3 /Ethernet 10BASE5 , IEEE802.3/Cheapernet (10BASE2) and Ethernet SEEQ Data Sheets are now on the Web, at
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10BASE5)
IEEE802
10BASE2)
12-bit
MD400023/D
T23B
RXC Series
t23b mos
TXC oscillator
10BASE2
10BASE5
T-25
8020 equivalent
T17b
D8020
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PDF
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21x21
Abstract: MM554 tray bga 45x45 bga X13769XJ2V0CD00 CPGA132 LA010 P14DH-100-300A2-1
Text: 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］のダイアログ・ボックスが表示されます。 3. 検索したいパッケージのNECコードを入力して， 検索 F をクリックしてください。
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P22C100300A1
P8C-100-300B
P8CT-100-300B2-1
P8C-100-300A-1
P-DIP8-0300-2
MD300-2A
MD300-1A
MD300-09A
21x21
MM554
tray bga
45x45 bga
X13769XJ2V0CD00
CPGA132
LA010
P14DH-100-300A2-1
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PDF
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812 tube
Abstract: dip 135 dip 28 dimension MD400-03A
Text: TUBE PACKING 1. CONTAINER Pin stopper tion irec d pin 1 2. INNER BOX L H W Label LABEL PRODUCT NAME, QUANTITY, LOT NUMBER, CLASS CONTAINER INNER BOX Quantity pcs /tube Dimension (mm) (WxH×L) Quantity (pcs) /box 20-pin plastic DIP MAX. 17 163×135×532
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20-pin
22-pin
28-pin
30-pin
MD400-03AL
812 tube
dip 135
dip 28 dimension
MD400-03A
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PDF
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NEC 20PIN DIP
Abstract: NEC 28PIN DIP MD400 NEC 24PIN DIP SSD-A-H6525-1 cerdip MD400-05A
Text: TUBE CONTAINER UNIT : mm 7.5 13.5 12.5 7.0 17.9 MD400-05A length : 495±2.0 +0.2 thickness : 0.5−0.1 tolerance : ±0.4 material : plastic with antistatic finish Applied Package Quantity (pcs) 14-pin • Plastic DIP MAX. 24 20-pin · Plastic DIP MAX. 17
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MD400-05A
14-pin
20-pin
22-pin
24-pin
28-pin
30-pin
SSD-A-H6525-1
NEC 20PIN DIP
NEC 28PIN DIP
MD400
NEC 24PIN DIP
SSD-A-H6525-1
cerdip
MD400-05A
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PDF
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Untitled
Abstract: No abstract text available
Text: TsiH fflni' 8023A MCC Manchester Code Converter 92123 This document is an LSI Logic document. Any reference to SEEQ Technology should be considered LSI Logic. Features • Compatible with IEEE 802.3 /Ethernet 10BASE5 , IEEE802.3/CHEAPERNET (10BASE2) and Ethernet
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10BASE5)
IEEE802
10BASE2)
MD400022/D
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PDF
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Untitled
Abstract: No abstract text available
Text: seeQ 48F010 1024K FLASH EEPROM PRELIMINARY DATA SHEET July 1989 Description Features • ■ 128K Byte Flash Erasable Non-Volatile Memory Low Power CMOS Process ■ Electrical Byte Write and Chip/Sector Erase ■ ■ ■ Input Latches tor Writing and Erasing
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48F010
1024K
48F010
128Kx8bits.
s48F010
MD400063/A
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PDF
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Untitled
Abstract: No abstract text available
Text: MODULES Q/E28C010 Timer E2 1024K Electrically Erasable PROM O ctober 1989 Description Features • CM O S Technology ■ M ilitary Tem perature Range ■ L o w P ow er O peration • 70 m A A ctive Current • 2 m A S tandby Current ■ On-Chip Timer • A utom atic E rase B efore Write
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Q/E28C010
1024K
28C256
D400066/A
MQ/ME28C010
28C010
MD400066/A
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PDF
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Untitled
Abstract: No abstract text available
Text: 28C64 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • CMOS Technology ■ Low Power • 50 mA Active • 150 pA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte Write Time SEEQ’s 28C64 is a CMOS 5V only, 8K x 8 Electrically
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28C64
28C64
000cycles
MD400004/D
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PDF
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Untitled
Abstract: No abstract text available
Text: DEC 1 2 WM 83C92A Ethernet Transceiver October 1990 P R E L IM IN A R Y Introduction The 83C92A is an Ethernet and Thin Net Transceiver that provides a complete Local Area Network interface for a station, with or without a transceiver cable. See Figure 1.
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83C92A
83C92A
DP8392A.
28-PIN
N002/-
MD400092/-
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PDF
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EEPROM 28C256
Abstract: No abstract text available
Text: 28C256 Timer E2 256K Electrically Erasable PROM October 1989 Description Features • ■ CMOS Technology L o w Power • 60 m A A ctive - 150 fjA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte W rite Time ■ Byte Write Mode ■ Write Cycle Com pletion Indication
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28C256
28C256
MD400020/E
EEPROM 28C256
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PDF
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Untitled
Abstract: No abstract text available
Text: 8020 MCC Manchester Code Converter November 1989 Features Low Power CMOS Technology with Single 5V Supply m Compatible with IEEE 802.3/Ethernet 10BASE5 , IEEE802.3/Cheapernet (10BASE2) and Ethernet Rev. 1 Specifications 20 pin DIP A PLCC Packages • Compatible with 8003 ELDd6, 8005 Advanced
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OCR Scan
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10BASE5)
IEEE802
10BASE2)
SEEQ8003and8005
MD400023/C
12-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: MODULES M28C010 Timer E 2 1024K Electrically Erasable PROM October 1989 Description Features • SEEQ's MM28C010 is a CMOS 5V only, 128Kx 8 Elec trically Erasable Programmable Read Only Memory EEPROM . The MM28C010 consists o f4 28C256 (32K x 8) CMOS EEPROMs and a 2 to 4 line decoder in LCC
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M28C010
1024K
MM28C010
128Kx
28C256
32pinmodule
MD400044/B
28C010
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PDF
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E38C32
Abstract: No abstract text available
Text: E/M38C16 E/M38C32 High Speed CMOS Electrically Erasable PROM PRELIMINARY DATA SHEET October 1989 Features • ■ ■ ■ ■ Military and Extended Temperature Range High Speed Address/Data Latching 50 ms Chip Erase 5V ±10% Power Supply Power Up/Down Protection Circuitry
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E/M38C16
E/M38C32
3SC16
38C32
28C64
MD400030/C
E38C32
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PDF
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Untitled
Abstract: No abstract text available
Text: 83C94 10BASE-T TWISTED PAIR TRANSCEIVER Technology, Incorporated PRELIMINARY 1993 Features • Low Power CMOS Technology - 125 \iA Standby typical ■ High-speed receiver architecture minimizes Jitter
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83C94
10BASE-T
28-pln
8020/8023A
MD400097/B
83C94
28-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: E/M2817A Timer E2 16K Electrically Erasable PROMs October 1989 Features Description • SEEQ's M2817A is a 5 V only, 2 K x 8 electrically erasable programmable read only memory EEPROM . It is pack aged in a 28 pin package and has a ready/busy pin. This
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E/M2817A
M2817A
M2817A
E2817A
MD400015/B
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PDF
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48128
Abstract: 27128 eprom MD4000 EEPROM 27128
Text: O c to b e r 1987 PRELIMINARY DATASHEET Features Description m 128K 16K x 8 • Pin Com patible to 2 7 1 2 8 EPROM ■ Low Cost Non-Volatile Memory ■ Chip E r a s e . . . Electrically SEEQ’s 48128 is a new 128K (16K x 8) memory device which combines both EEPROM and EPROM
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MD400018/A
100ms.
MD400018/A
16Kx8
48128
27128 eprom
MD4000
EEPROM 27128
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PDF
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36C32-55
Abstract: Seeq 36C16 24128 36c3240
Text: 36C16 36C32 High Speed CMOS Electrically Erasable PROM October 1989 Features Description • SEEQ's36C16/32 are high speed 2 K x8 /4 K x8 Electrically Erasable Programmable Read Only Memories, manufac tured using SEEO's advanced 1.25 micron CMOS proc ess.
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36C16
36C32
36C16/36C32
36C32.
36C16.
36C32
MD400027/C
36C32-55
Seeq
24128
36c3240
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PDF
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74LS45
Abstract: DRAM 4464 uses of 74ls245 to speed up buses tms 4464 10BASE-7 NQ8005 logic diagram of 74LS245 4464 dram ns-1a 0.1 ohm 1.0% 74LS245
Text: 8005 Advanced Ethernet Data Link Controller AEDLC June 1991 Features • C o n fo rm s to IE E E 802.3 S ta n d a rd • E th e rn e t (10BASE-5) C heapernet (10BASE-2) a n d T w isted P a ir (10BASE-T) ■ R ecognizes One to S ix Selectable S tation
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10BASE-5)
10BASE-2)
10BASE-7)
MD400031/E
74LS45
DRAM 4464
uses of 74ls245 to speed up buses
tms 4464
10BASE-7
NQ8005
logic diagram of 74LS245
4464 dram
ns-1a 0.1 ohm 1.0%
74LS245
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PDF
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28C65 seeq
Abstract: M28C65 A6A12
Text: E/M28C65 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • Military and Extended Temperature Range • - 5 5 ° C to + 125° C Operation Military . _ 40° C to + 85° C Operation (Extended) ■ ■ CMOS Technology Low Power • 60 mA Active
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E/M28C65
MD40002B/C
E/M28C65
28C65
MD400026/C
28C65 seeq
M28C65
A6A12
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PDF
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2816A
Abstract: No abstract text available
Text: 38C16 38C32 High Speed CMOS Electrically Erasable PROM October 1989 Features • H igh Speed: • 35 n s M axim um A ccess Time P ow er Up/Down Protection Circuitry ■ C M OS Technology ■ Low P ower: • 350 m W JE D E C A pp ro ved B yte W ide P inout
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38C16
38C32
s38C16/32are
36C32
MD400029/C
2816A
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PDF
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27128-30
Abstract: SEEQ 27128-25 27128-25 SEEQ eprom
Text: 82025 MILITARY DRAWING 128K UV EPROM _ May 1988 Features Description • ■ 82025 M ilitary D raw ing C om pliant ■ ■ 21 -V o lt P rogram m ing ■ ■ ■ ■ 2 0 0 n s A ccess Time SEEQ's 82025 is a military drawing compliant, 21-volt
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21-volt
064-bit
MIL-STD-883.
MIL-M-38510
MD400060/-
27128-30
SEEQ 27128-25
27128-25
SEEQ eprom
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PDF
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28HC256
Abstract: No abstract text available
Text: E/M28HC256 256K High Speed EEPROM PRELIMINARY DATA SHEET November 1989 FEATURES • Military and Extended Temperature Range • -55° C to +125“ C Operation Military • -40° C to + 85° C Operation (Extended) High Endurance • 10,000 Cycles/Byte • 10 Year Data Retention
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E/M28HC256
28HC256
MD400082/A
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PDF
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SEEQ 52B33
Abstract: seeq52b33 seeq eeprom
Text: 52B33/52B33H 64K Electrically Erasable PROM October 1987 Features Description • SEEQ’s 52B33 is a 8 1 9 2 x8 bit, 5 volt electrically erasable programmable read only memory EEPROM which is specified over a 0°C to 70'JC temperature range. Data retention is specified to be greater than 10 years. The
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52B33/52B33H
52B33/52B33H;
52B33H
52B33
52B33
200ns
MD400008/B
SEEQ 52B33
seeq52b33
seeq eeprom
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PDF
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