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    MEMORY 256K I2C Search Results

    MEMORY 256K I2C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    X28HC256JI-90T1 Renesas Electronics Corporation 256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM Visit Renesas Electronics Corporation
    71128S12YG Renesas Electronics Corporation 256K X 4 SRAM REV. PINOUT Visit Renesas Electronics Corporation
    71128S15YG Renesas Electronics Corporation 256K X 4 SRAM REV. PINOUT Visit Renesas Electronics Corporation
    71128S20Y8 Renesas Electronics Corporation 256K X 4 SRAM REV. PINOUT Visit Renesas Electronics Corporation
    7MP4045S15Z Renesas Electronics Corporation 256K X 32 SRAM MODULE Visit Renesas Electronics Corporation

    MEMORY 256K I2C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    256k x8 SRAM 5V

    Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
    Text: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)


    Original     		M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 256k x8 SRAM 5V ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09 PDF

    Untitled

    Abstract: No abstract text available
    Text: HT24LC256 CMOS 256K 2-Wire Serial EEPROM Features Description • Operating voltage: 2.2V~5.5V for Ta=-40˚C to +85˚C The HT24LC256 device is a 256K-bit 2-wire serial read/write non-volatile memory device manufactured using a CMOS floating gate process. Its 256K bits of


    Original     		HT24LC256 HT24LC256 256K-bit 40-year PDF

    Untitled

    Abstract: No abstract text available
    Text: HT24LC256 CMOS 256K 2-Wire Serial EEPROM Features Description • Operating voltage: 2.2V~5.5V for Ta=-40˚C to +85˚C The HT24LC256 device is a 256K-bit 2-wire serial read/write non-volatile memory device manufactured using a CMOS loating gate process. Its 256K bits of


    Original     		HT24LC256 HT24LC256 256K-bit 40-year PDF

    FT24C256

    Abstract: No abstract text available
    Text: FT24C256 256K-bit 2-Wire Serial CMOS EEPROM Description The FTE24C256 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The FTE24C256 contains a memory array of 256K-bits 32,768 x 8 , and is further subdivided into 512 pages of 64 bytes each


    Original     		256K-bit FT24C256 FTE24C256 256K-bits FT24C256 PDF

    Memory

    Abstract: FTE24C256
    Text: FT24C256 256K-bit 2-Wire Serial CMOS EEPROM Description The FTE24C256 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The FTE24C256 contains a memory array of 256K-bits 32,768 x 8 , and is further subdivided into 512 pages of 64 bytes each


    Original     		FT24C256 256K-bit FTE24C256 256K-bits Memory PDF

    MB85RC256

    Abstract: MB85RC256VPF-G-JNERE2
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00019-2v0-E FRAM MB85RC256V MB85RC256V is a 256K-bits FRAM with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00019-2v0-E MB85RC256V MB85RC256V 256K-bits MB85RC256 MB85RC256VPF-G-JNERE2 PDF

    TTE24C256

    Abstract: TTE24C
    Text: 256K-bit 2-Wire Serial CMOS EEPROM TTE24C256 Preliminary Description The TTE24C256 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The TTE24C256 contains a memory array of 256K-bits 32,768 x 8 , and is further subdivided into 512 pages of 64 bytes each


    Original     		256K-bit TTE24C256 TTE24C256 256K-bits TTE24C PDF

    Untitled

    Abstract: No abstract text available
    Text: STA2058 TESEO baseband High performance single chip GPS baseband with embedded FLASH memory Data Brief Features • Single chip baseband ■ Complete embedded memory system: – FLASH 256K+16K bytes – RAM 64K bytes TQFP64 ■ 66-MHz ARM7TDMI 32 bit processor


    Original     		STA2058 TQFP64 66-MHz 64Mbite LFBGA144 LFBGA144 TQFP64 STA2058 STA56n PDF

    error multiplexer parity comparator

    Abstract: PQFP144 ST10 ST10F269 TQFP144 1221h ST10F269 03 st10 Bootstrap p46a
    Text: ST10F269Zx 16-BIT MCU WITH MAC UNIT, 128K to 256K BYTE FLASH MEMORY AND 12K BYTE RAM DATASHEET • ■ 128K or 256KByte Flash Memory 2K Byte Internal RAM 16 CPU-Core and MAC Unit Watchdog 16 10K Byte XRAM 16 16 8 16 Interrupt Controller 8 Por t 5 16 BRG BRG


    Original     		ST10F269Zx 16-BIT 256KByte TQFP144 F269-Q3 error multiplexer parity comparator PQFP144 ST10 ST10F269 TQFP144 1221h ST10F269 03 st10 Bootstrap p46a PDF

    Untitled

    Abstract: No abstract text available
    Text: ST10F269Zx 16-BIT MCU WITH MAC UNIT, 128K to 256K BYTE FLASH MEMORY AND 12K BYTE RAM DATASHEET • ■ 128K or 256KByte Flash Memory 2K Byte Internal RAM 16 CPU-Core and MAC Unit Watchdog 16 10K Byte XRAM 16 16 8 16 Interrupt Controller 8 Por t 5 16 BRG BRG


    Original     		ST10F269Zx 16-BIT 256KByte TQFP144 F269-Q3 PDF

    b30 c250

    Abstract: TP082 2C162 82430VX TP1003 intel C236 TP032 TP1026 TP1033 RY 227
    Text: Page# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Page Title Index PRIMARY CPU Socket 7 Clock Generator 82437VX Chipset TVX 82438VX Chipset TDX Synchronous Cache, 256K Memory Modules 0 & 1 Memory Modules 2 & 3 System ROM PIIX3 PCI IDE Interface


    Original     		82437VX 82438VX FM5-62 001uF 82430VX b30 c250 TP082 2C162 82430VX TP1003 intel C236 TP032 TP1026 TP1033 RY 227 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM24V02 256Kb FM24V02 256Kbit overhea/25/2010 FM24V02-G FM24VN02-G FM24V02-GTR FM24VN02-GTR PDF

    Untitled

    Abstract: No abstract text available
    Text: FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM24V02 256Kb FM24VN02) 100KHz) FM24V02-G FM24VN02-G FM24V02-GTR FM24VN02-GTR PDF

    Untitled

    Abstract: No abstract text available
    Text: FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface


    Original     		FM24V02 256Kb FM24VN02) 100KHz) PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM24V02 256Kb FM24VN02) 100KHz) FM24V02 FM24V02-G FM24VN02-G FM24V02-GTR FM24VN02-GTR PDF

    teseo

    Abstract: STA2058 STA5620 teseo 2 data output LFBGA144 LQFP64 STA2058EX usb i2c spi converter 03996E-1
    Text: STA2058 Teseo GPS Platform high-sensitivity baseband Data Brief Features • Single chip baseband with embedded flash ■ Complete embedded memory system: – FLASH 256K+16K bytes – RAM 64K bytes ■ 66-MHz ARM7TDMI 32 bit processor ■ High Performance GPS engine HPGPS


    Original     		STA2058 66-MHz -146dBm -159dBm 64Mbite LQFP64 LFBGA144 teseo STA2058 STA5620 teseo 2 data output LFBGA144 LQFP64 STA2058EX usb i2c spi converter 03996E-1 PDF

    FM24V02-GTR

    Abstract: FM24V02 FM24V05 FM24VN02 FM24VN05
    Text: Product Preview FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM24V02 256Kb FM24V02 256Kbit 340282A, 24V02 A6340282A RIC0824 24VN02 FM24V02-GTR FM24V05 FM24VN02 FM24VN05 PDF

    FM24V02

    Abstract: FM24V05 FM24VN02 FM24VN05
    Text: Preliminary FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM24V02 256Kb FM24V02 256Kbit RIC0824 24VN02 A6340282A FM24V05 FM24VN02 FM24VN05 PDF

    FM24V02G

    Abstract: FM24VN02 AEC-Q100-002 FM24V02
    Text: Pre-Production FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM24V02 256Kb FM24V02 256Kbit overheFM24V02 FM24V02-G FM24VN02-G FM24V02-GTR FM24VN02-GTR FM24V02G FM24VN02 AEC-Q100-002 PDF

    LPC-H2294

    Abstract: te28f320c3-bd70 LPC2294 TE28F320C3BD70 71V416 USB-RS232 USBRS232
    Text: LPC-H2294 HEADER BOARD FOR LPC2294 ARM7TDMI-S MICROCONTROLLER WITH 1MB SRAM AND 4MB FLASH MEMORY FEATURES: z z z z z z z z z z z z z z z z z z z MCU: LPC2294 16/32 bit ARM7TDMI-S t with 256K Bytes Program Flash, 16K Bytes RAM, EXTERNAL MEMORY BUS, RTC,4x 10 bit ADC 2.44 uS, 2x UARTs, 4x CAN, I2C, SPI, 2x 32bit TIMERS, 7x CCR, 6x PWM, WDT, 5V tolerant I/O, up to


    Original     		LPC-H2294 LPC2294 32bit 60MHz 256Kx32bit) 71V416 2048Kx16bit) TE28F320C3BD70 RS232 te28f320c3-bd70 USB-RS232 USBRS232 PDF

    diode T35 12H

    Abstract: ST10F269Z2Q6 ST10F269Q ST10F269Z2T3 PQFP144 ST10F269 TQFP144 diode t318 BB126 st10 Bootstrap
    Text: ST10F269 16-BIT MCU WITH MAC UNIT, 128K to 256K BYTE FLASH MEMORY AND 12K BYTE RAM DATASHEET • ■ 2K Byte Internal RAM 16 CPU-Core and MAC Unit Watchdog 16 10K Byte XRAM CAN1_RXD CAN1_TXD CAN1 CAN2_RXD CAN2_TXD CAN2 PEC Oscillator and PLL 16 Interrupt Controller


    Original     		ST10F269 16-BIT 256KByte TQFP144 F269-Q3 diode T35 12H ST10F269Z2Q6 ST10F269Q ST10F269Z2T3 PQFP144 ST10F269 TQFP144 diode t318 BB126 st10 Bootstrap PDF

    MX-38T

    Abstract: CSA4.00MG TC57256AD TMP87PM43 TMP87PM43N
    Text: TO SHIBA TMP87PM43 CMOS 8-BIT MICROCONTROLLER TMP87PM43N The 87PM43 is a One-Time PROM microcontroller with low-power 256K bits a 32K bytes program memory electrically programmable read only memory for the 87CK43/M43 system evaluation. The 87PM43 is pin


    OCR Scan     		TMP87PM43 TMP87PM43N 87PM43 87CK43/M43 87CK43/M43. TC57256AD BM1163 MX-38T CSA4.00MG TMP87PM43 TMP87PM43N PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TMP87PM43 CMOS 8-Bit Microcontroller TMP87PM43N The 87PM43 is a One-Time PROM microcontroller with low-power 256K bits a 32 Kbytes program memory electrically programmable read only memory for the 87CK43/M43 system evaluation. The 87PM43 is pin


    OCR Scan     		TMP87PM43 TMP87PM43N 87PM43 87CK43/M43 87CK43/M43. TC57256AD BM1163 PDF

    D42280V

    Abstract: old nec tv diagram UPD42280GU-30 uPD42280V-30 D42280GU UPD42280 uPD42280-30 uPD42280G uPD42280V-60 old nec 14" tv diagram
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ,uPD42280 2 M-BIT FIELD BUFFER The nPD42280 is a high-speed field buffer equipped with a memory of 256K words x 8bit 262, 224 x 8bit configuration. The high-speed and the low power consumption are realized in CMOS dynamic circuit.


    OCR Scan     		uPD42280 nPD42280 PD42280 D42280GU-XX uPD42280V-xx 28-pin PD42280 D42280V old nec tv diagram UPD42280GU-30 uPD42280V-30 D42280GU uPD42280-30 uPD42280G uPD42280V-60 old nec 14" tv diagram PDF