MEMORY BUBBLE Search Results

MEMORY BUBBLE Result Highlights (5)

Part	Manufacturer	Description
AM27LS07PC	Rochester Electronics LLC	27LS07 - Standard SRAM, 16X4
MD2716M/B	Rochester Electronics LLC	2716M - 2Kx8 EPROM
CY7C167A-35PC	Rochester Electronics LLC	CY7C167A - CMOS SRAM
2964B/BUA	Rochester Electronics LLC	2964B - Dynamic Memory Controller
TN28F020-90	Rochester Electronics LLC	28F020 - 2048K (256K x 8) CMOS Flash Memory

MEMORY BUBBLE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
DS3615 Abstract: NBM2256 tazer 74LS164 74LS165 NBC82853 MC811 microbus FAIU Text: December19£ p r e lim in a r y NBC82851256k-Bit Bubble Memory Controller General Description The NBC82851 is a dedicated bubble memory controller designed fo r use w ith N ational S e m iconductor’s NBM2256 256k-bit magnetic bubble memory. The control	OCR Scan	December19fi NBC82851256k-Bit NBC82851 NBM2256 256k-bit DS3615 tazer 74LS164 74LS165 NBC82853 MC811 microbus FAIU	PDF
bubble memory Abstract: No abstract text available Text: p r e l im in a r y NBC82851256k-Bit Bubble Memory Controller General Description The NBC82851 is a dedicated bubble memory controller designed fo r use w ith N ational S em icon ducto r’s NBM2256 256k-bit m agnetic bubble memory. The control ler is designed so that a m inim um of interface circuitry is	OCR Scan	NBC82851256k-Bit NBC82851 NBM2256 256k-bit bubble memory	PDF
BPK-72 Bubble Memory Abstract: IMB-72 Bubble Memory BPK72 7110a-1 Intel 8080 7254 coil driver Intel BUBBLE INTEL 7254 BPK-70 Bubble Memory Text: in te i rauyiMioiMÄW BPK 72A 1MBIT BUBBLE MEMORY PROTOTYPE KIT BPK 72A-1 0 To 75 °C BPK 72A-4 10°C To 55°C BPK 72A-5* —20°C To 85°C Assembled and Tested 1MBit Bubble Memory Prototype Kit on 4” x 4” PC Board 1Mbit, Non-Volatile, Read-Write, Solid-State Memory in Leaded Dense	OCR Scan		PDF
bubble memory Abstract: Non-Volatile Random Access Memory nvrams magnetic bubble memories Text: ARTICLE REPRINT AR-468 Keeping data sale with nonvolatile memory The author sorts out the myriad nonvolatile memory options available, including ROMs, PROMs, EPROMs, EsPROMs, NVRAMs, plus others. T erry Kendall Technical Marketing Engineer Memory Com ponents Div.	OCR Scan	AR-468 16-bit bubble memory Non-Volatile Random Access Memory nvrams magnetic bubble memories	PDF
DDR2 phy Abstract: verilog hdl code for parity generator powerPC 440 schematics MT4HTF3264H ug406 PPC440MC VIRTEX-5 DDR2 sdram mig 3.61 LXT 971 VIRTEX-5 DDR PHY XAPP701 Text: LogiCORE IP Multi-Port Memory Controller v6.06.a DS643 July 25, 2012 Product Specification Introduction LogiCORE IP Facts Table The LogiCORE IP Multi-Port Memory Controller (MPMC) is a fully parameterizable memory controller that supports SDRAM/DDR/DDR2/DDR3/LPDDR	Original	DS643 PPC440MC) DDR2 phy verilog hdl code for parity generator powerPC 440 schematics MT4HTF3264H ug406 PPC440MC VIRTEX-5 DDR2 sdram mig 3.61 LXT 971 VIRTEX-5 DDR PHY XAPP701	PDF
DS643 Abstract: microblaze locallink xilinx DDR3 controller user interface v605a B32R VIRTEX-5 DDR2 sdram mig 3.61 spartan6 mig ddr3 ddr3 ram slot pin detail 240 pin 0x000001DF verilog code for ddr2 sdram to virtex 5 using ip Text: LogiCORE IP Multi-Port Memory Controller v6.05.a DS643 October 19, 2011 Product Specification Introduction LogiCORE IP Facts Table The LogiCORE IP Multi-Port Memory Controller (MPMC) is a fully parameterizable memory controller that supports SDRAM/DDR/DDR2/DDR3/LPDDR	Original	DS643 PPC440MC) microblaze locallink xilinx DDR3 controller user interface v605a B32R VIRTEX-5 DDR2 sdram mig 3.61 spartan6 mig ddr3 ddr3 ram slot pin detail 240 pin 0x000001DF verilog code for ddr2 sdram to virtex 5 using ip	PDF
Untitled Abstract: No abstract text available Text: LogiCORE IP Multi-Port Memory Controller v6.06.a DS643 February 22, 2013 Product Specification Introduction LogiCORE IP Facts Table The LogiCORE IP Multi-Port Memory Controller (MPMC) is a fully parameterizable memory controller that supports SDRAM/DDR/DDR2/DDR3/LPDDR	Original	DS643 PPC440MC)	PDF
Bubble Memory Abstract: TA 7230 P intel 8085 Intel BUBBLE 7230 intel 7110 intel 8088 memory memory bubble INTEL 7230 S6590 Text: 7230 CURRENT PULSE GENERATOR FOR BUBBLE MEMORIES TTL Compatible Inputs Provides all Pulses for IM’s Bubble Memories — Replicate, Swap, Generate, Boot Replicate and Bootswap Current Sink Outputs Designed to Directly Drive Bubble Memory • Direct Interface to Bubble Memory	OCR Scan	22-Pin 71meter S6590 S6590 AFN-01357A Bubble Memory TA 7230 P intel 8085 Intel BUBBLE 7230 intel 7110 intel 8088 memory memory bubble INTEL 7230	PDF
intel 7110 Abstract: MAGNETICA bubble memory "bubble memory" content addressable memory sense amplifier "content addressable memory" sense amplifier Intel BUBBLE magnetic bubble memories Text: iny A PRIMER ON MAGNETIC BUBBLE MEMORY Magnetic bubble memory is a solid-state technology with high reliability, ruggedness, small size, light weight, and limited power dissipation. It has applications in telecommunications, data acquisition, industrial control, terminals, and small busi	OCR Scan		PDF
256KBIT Abstract: bubble memory bubble timing generator sync INS82851 NBM2256 256k FIFO Text: INS82851 National Magnetic B uttle Memories Semiconductor PREVIEW INS82851 Bubble Memory Controller General Description Features The INS82851 is an NMOS con troller s pecifically programmed fo r use with National S em iconductor’s NBM2256 256K-bit magnetic bubble memory. The	OCR Scan	INS82851 NBM2256 256K-bit 40-pin INS82851 256KBIT bubble memory bubble timing generator sync 256k FIFO	PDF
NBM2256 Abstract: generator with magnetic permanent magnetic bubble memories bubble memory bubble memories Text: Magnetic Bubble Memories « « iew NBM2256 Bubble Memory General Description National Semiconductor’s NBM2256 is a low cost, non-volatile, highly reliable solid state memory that uses magnetic bubble technology. The NBM2256 has the form of a dual-in-line package	OCR Scan	NBM2256 NBM2256 generator with magnetic permanent magnetic bubble memories bubble memory bubble memories	PDF
33512 Abstract: a/MC 3351 Text: Extended Temperature Range Supplement 3351 40 x 9 FIFO Memory MOS Memory Products Logic Symbol Description The 3351 is a First-In First-Out FIFO memory used in data rate buffering applications. The 3351 has a capacity of 40 9-bit words. The words are accepted at	OCR Scan		PDF
STR S 6307 Abstract: str 6307 uP 6308 AD STR 6309 STR 6307 POWER uP 6308 AP str s 6309 LT 7224 of str 6309 str 6308 Text: 7224 CONTROLLER FOR 4MBIT BPK 5V74 BUBBLE MEMORY SUBSYSTEM • Provides Interface between Host Microprocessor and 4 Mbit Bubble Memory Subsystems ■ 18 Easy-to-Use Commands . Three Modes of Data Transfer _ ■ Interlaces to 8080/85/86/88/186/286 and Other Standard Microprocessors	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: CYM4210 CYM4220 CYPRESS _ SEMICONDUCTOR Cascadeable 8K x 9 FIFO Cascadeable 16K x 9 FIFO Features Functional Description • 8K x 9 FIFO buffer memory 4210 or 16K x 9 FIFO buffer memory (4220) The CYM4210 isa first-in first-out (FIFO) memory module that is 8,192 words by 9	OCR Scan	CYM4210 CYM4220 7C42X 600-mil 4210HD-- CYM4210HD-- CYM4210HD	PDF

ms 7254 ver 3.0 Abstract: AR-243 motorola bubble memory controller intel 7114 bubble Text: irrtei ARTICLE REPRINT AR-243 Thin-film detectors, X-ray lithography deliver 4-Mbit bubble chip Next-generation bubble memory chip is even smaller than the compatible, 1-Mbit device; set of support circuits takes care of memory system requirements. Propelled by X-ray lithogra	OCR Scan	AR-243 ms 7254 ver 3.0 AR-243 motorola bubble memory controller intel 7114 bubble	PDF
EBSA-110 Abstract: CP15 Text: Memory Management on the StrongARM SA-110 Ref. Number: DS internal ESAE-001-A01 The SA-110 is the first StrongARM implementation of the ARM Architecture. This paper provides an overview of memory management followed by details specific to the ARM architecture then the SA-110 implementation itself. The MMU (memory	Original	SA-110 ESAE-001-A01 SA-110 Aug96 WRCP15 EBSA-110 CP15	PDF
3351-2 Abstract: 1N4152 Text: 3351 40 x 9 FIFO Memory MOS Memory Products Description The 3351 is a First-In First-Out F IF O memory used in data rate buffering applications. The 3351 has a cap acity of 40 9-bit words. The words are accep ted at the input, automatically shifted towards the output,	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: 3 3 4 1 /3 3 4 1 A 64 x 4 FIFO Serial Memory MOS Memory Products Description The 3341 or 3341A is a 64-word x 4-bit First-In First-Out FIFO Serial Memory. Inputs and the outputs are completely independent (no common clocks) making the 3341/3341A ideal for	OCR Scan	64-word 3341/3341A 12-Bit 3341s	PDF
RQR-ME-030B Abstract: 91208 INNER CARTON LABEL MR260 Text: 107-68879 Packaging Specification 07Aug09 Rev O RITS CONN & MEMORY BOARD 1. PURPOSE 目的 Define the packaging specifiction and packaging method of RITS CONN & MEMORY BOARD. 订定 RITS CONN & MEMORY BOARD 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围	Original	07Aug09 315LX270WX26 280LX198WX3 10METHODproduct RQR-ME-030B 91208 INNER CARTON LABEL MR260	PDF
Untitled Abstract: No abstract text available Text: 107-68879 Packaging Specification 06Nov2012 Rev E RITS CONN & MEMORY BOARD 1. PURPOSE 目的 Define the packaging specifiction and packaging method of RITS CONN & MEMORY BOARD. 订定 RITS CONN & MEMORY BOARD 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围	Original	06Nov2012 315LX270WX26 280LX198WX13H 283x203x125 102X51 349x298xn QR-ME-030CConfidential	PDF
bubble memory Abstract: driver 1028 TDA 1028 TPS 1028 NBM2011 "Barium Ferrite" Text: November 1980 NBM2011 1M x 1 Magnetic Bubble Memory Device General Description The NBM2011 is a 1,048,576 220 bit magnetic bubble memory device. All required magnetic components, in cluding the drive field coils, permanent magnets and pro* tective magnetic shield are integral parts of the device. It	OCR Scan	NBM2011 16-pin bubble memory driver 1028 TDA 1028 TPS 1028 "Barium Ferrite"	PDF
D23341 Abstract: No abstract text available Text: Extended Temperature Range Supplement 3341 /3 3 4 1 A 64 x 4 FIFO Serial Memory MOS Memory Products D escrip tio n The 3341 or 3 3 4 1 A is a 64-word x 4-bit First-In First-Out FIFO serial memory. Inputs and the outputs are completely independent (no common	OCR Scan	/3341A 64-word 3341/3341A D23341	PDF
BPK72 Abstract: intel 7110 DMA Controller 8257 isbx-251 Text: APPLICATION NOTE AP-157 O c to b e r 1983 AP-157 INTRODUCTION^ The 7220-! is a single-chip LSI Bubble Memory Controller BMC that implements a bubble memory storage subsystem (with up to eight bubble storage units (BSUs) per BMC). Each bubble storage unit consists of five support circuits in addition	OCR Scan	AP-157 BPK72 intel 7110 DMA Controller 8257 isbx-251	PDF
3341ADC Abstract: f3341 D23341 3341AD 3341A Text: Extended Temperature Range Supplement 3341 /3 3 4 1 A 64 x 4 FIFO Serial Memory MOS Memory Products Description The 3341 or 3341A is a 64-word x 4-bit First-In First-Out FIFO serial memory. Inputs and the outputs are com pletely independent (no common clocks) making the 3 3 4 1 /3 3 4 1 A ideal tor	OCR Scan	3341/3341A 64-word 3341/3341A 3341ADC f3341 D23341 3341AD 3341A	PDF

MEMORY BUBBLE Search Results

MEMORY BUBBLE Result Highlights (5)

MEMORY BUBBLE Datasheets Context Search

DS3615

bubble memory

BPK-72 Bubble Memory

bubble memory

DDR2 phy

DS643

Untitled

Bubble Memory

intel 7110

256KBIT

NBM2256

33512

STR S 6307

Untitled

ms 7254 ver 3.0

EBSA-110

3351-2

Untitled

RQR-ME-030B

Untitled

bubble memory

D23341

BPK72

3341ADC