2102 SRAM
Abstract: 2112 sram seiko epson RAM IC MEMORY CARD
Text: STATIC RAM O U TLIN E The SRAM IC MEMORY CARD series is made up of Static RAM chips. Memory capacity is from 64K Bytes to 1M Bytes. HE series is 16 bit wide data bus. This series featuresa built-in exchangeable battery and a mechanical write protect switch to protect
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RBC065HE10
RBC129HE10
RBC257HE11
RBC513HE12
RBC101HE10
RBC065,
RBC129,
RBC257,
RBC513,
RBC101
2102 SRAM
2112 sram
seiko epson RAM IC MEMORY CARD
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wf vqc 10d
Abstract: TGS 2201 SMD W2T TRANSISTOR SMD W2T 72 EX5962 MMI PAL14L8 C57401j tms 6011 MIMI Ti PROM programming procedure w2t smd
Text: 2 Specialty Memory Products 1988 Data Book Advanced Micro Devices Monolithic ryisn Memories UliTlU A W h o lly O w n e d S u b s id ia ry o f A d v a n c e d M ic r o D e vice s a Advanced Micro Devices Sp ecialty Memory Products Data Book/Handbook Introduction
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06566C
06972D
06705D
wf vqc 10d
TGS 2201
SMD W2T
TRANSISTOR SMD W2T 72
EX5962
MMI PAL14L8
C57401j
tms 6011
MIMI Ti PROM programming procedure
w2t smd
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Untitled
Abstract: No abstract text available
Text: XC2018B Military Logic Cell "Array Product Specification. See Note 1. FEATURES Part N um ber • M IL-S T D -883 Class B Processing. Complies with paragraph 1.2.1 • Field-programmable gate array • Low power CMOS static memory technology L o g ic C apacity
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XC2018B
XC2018
TSC0026
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PDF
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SC11390
Abstract: SC11390CV sc1139 AVD11 ic 1240 ringer 8 pin diagram ic 1240 ringer pin diagram "Matrix keyboard" resistive comparator c22 vhz MN 2114 static ram
Text: v 'V SC11390 Integrated Telephone System 'V ' SIERRA SEMICONDUCTOR 68-PIN P L C C PA C K A G E □ Facilities for conference calls □ Speech record / playback interface for tape and IC memory □ Programmable multi tone ringer □ Voice detection □ Auxiliary inputs for music on
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SC11390
68-PIN
20x23
CEPTCS203
SC11390
20xF0.
SC11390CV
sc1139
AVD11
ic 1240 ringer 8 pin diagram
ic 1240 ringer pin diagram
"Matrix keyboard" resistive comparator
c22 vhz
MN 2114 static ram
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M514256B
Abstract: *m514256B
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM514256B MCM51L4256B 256K x 4 Bit CMOS Dynamic RAM Page Mode The M C M 514256B is a 0.8n C M OS high-speed dynam ic random access memory. It is organized as 262,144 fo u r-bit words and fabricated w ith C M OS silicon-gate pro
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514256B
MCM514256B-MCM51L4256B
MOTOD010
51L4256B
MCM514256BJ60
MCM51L4256BJ60
MCM514256BJ60R2
MCM51L4256BJ60R2
M514256B
*m514256B
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NTE IC Master
Abstract: PD17003
Text: MOS INTEGRATED CIRCUIT ¿¿PD1 7 0 0 3 A D IG ITA L T U N IN G S Y S TE M H A R D W A R E B U ILT-IN 4 -B IT SING LE C H IP M IC R O CONTROLLER /¿PD17003A is a 4-bit single chip CMOS micro controller which contains digital tuning system hardware. 17K architecture is used for CPU, data and memory manipulations and various types of operations, and
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PD17003A
NTE IC Master
PD17003
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PDF
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TMM2114AP-15
Abstract: TMM2114AP-12 TMM2114AP12 TMM2114AP TMM2114AP15
Text: TOSHIBA MOS MEMORY PRODUCTS 1024 WORD x 4 BIT STATIC RAM T M M 2 I I 4 A P - 1 2 T M M 2 I I 4 A P - 1 5 DESCRIPTION The T M M 2 114A P is a 4 ,0 9 6 b its s ta tic ra n d o m s u ita b le f o r use in m ic r o c o m p u te r p e rip h e ra l m e m o ry access m e m o ry o rg a n iz e d as 1 0 2 4 w o rd s b y 4 b its and
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OCR Scan
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TMM2114AP
120ns/150ns.
TMM2114AP-15
TMM2114AP-12
TMM2114AP12
TMM2114AP15
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MM2114
Abstract: TMM2114AP-15 TMM2114AP12 TMM2114AP TMM2114AP-12 MM2114AP-12
Text: TOSHIBA MOS MEMORY PRODUCTS T M M 2 I I4 A P - I2 T M M 2 I I4 A P - I 5 1024 WORD x 4 BIT STATIC RAM DESCRIPTION The T M M 2 114A P is a 4 ,0 9 6 b its s ta tic ra n d o m s u ita b le f o r use in m ic r o c o m p u te r p e rip h e ra l m e m o ry access m e m o ry o rg a n iz e d as 1 0 2 4 w o rd s b y 4 b its and
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OCR Scan
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TMM2114AP
120ns/150ns.
MM2114
TMM2114AP-15
TMM2114AP12
TMM2114AP-12
MM2114AP-12
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ci 2114
Abstract: 2114L-3 2114L2 2114 static ram 2114 2114 static ram diagram 2114 ram RAM 2114 memory 2114 D2114L RAM
Text: 2114 4 0 9 6 Bit 1 0 2 4 x 4 NMOS Static RAM M1KR5H. D E S C R IP T IO N FEA TU R ES • Cycle Time Equal to Access Time • Completely Static • No Clock Required • Common Data Input and Output • TTL Compatible Inputs and Outputs • 883A Class B Processing Available
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1024x4)
2114L)
4096-bit
2114L2
2114L3
2114L
ci 2114
2114L-3
2114L2
2114 static ram
2114
2114 static ram diagram
2114 ram
RAM 2114
memory 2114
D2114L RAM
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memory ic 2114
Abstract: ic 2114 memory 2114 2114L2 2114 static ram 2114 static ram ic 2114l-3 2114 ram 2114L3 2114 pin diagram
Text: 2114 4 0 9 6 Bit 1 0 2 4 x 4 NMOS S ta tic RAM DGmi^DIL DESCRIPTION FEATURES • Cycle Time Equal to Access Time • Completely Static - No Clock Required • Common Data Input and Output • TTL Compatible Inputs and Outputs • 883A Class B Processing Available
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1024x4)
2114L)
4096-bit
2114L2
2114L3
2114L
memory ic 2114
ic 2114
memory 2114
2114L2
2114 static ram
2114 static ram ic
2114l-3
2114 ram
2114L3
2114 pin diagram
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PDF
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intel 2114 static ram
Abstract: ac 1501-50 M2114L2 intel 2114 M2114L MD2114 MD2114L2 m2114 MD2114L MD2114L3
Text: DfflÜ^DIL M 2114L 4 0 9 6 B it 1 0 2 4 x 4 NMOS S ta tic RAM FEATURES DESCRIPTION • • • • • • • The M2114L is a 4096-bit static Random Access Memory organized 1024 words x 4 bits. The storage cells and decode and control circuitry are completely
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M2114L
1024x4)
-495imW
M2114
4096-bit
M2114L2
M2114L3
M2114L
intel 2114 static ram
ac 1501-50
M2114L2
intel 2114
MD2114
MD2114L2
m2114
MD2114L
MD2114L3
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PDF
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sram 2114
Abstract: 2114 static ram 2114 SRAM 2114 static ram ic 2114 "static RAM" 2114 Ram pinout 18 RAM 2114 3007a STATIC RAM 2114 2114 ram
Text: L C 351 4 3514L c -m o s # lsi CIRCUIT DRAWING NO.40D2 1 0 2 4 WORDS X A BITS HIGH-SPEED CMOS STATIC RAM ' General Description 3007A ' The LC 3514/LC3514L are nonclocked CMOS static RAM's organized as 1024 words x 4 bits They are compatible w ith worldwide standard N-channel 2114-type 4K SRAM's and have a complete CMOS circuit
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LC3514
3514L
LC3514/LC3514L
2114-type
200ns
LC3514L,
200ns
LC3514D,
18-pin
LC3514D
sram 2114
2114 static ram
2114 SRAM
2114 static ram ic
2114 "static RAM"
2114 Ram pinout 18
RAM 2114
3007a
STATIC RAM 2114
2114 ram
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Untitled
Abstract: No abstract text available
Text: Extended Temperature Range Supplement F 2114 /F 2 114L 1024 x 4 Static RAM MOS Memory Products Description The F 2 1 14 is a 4096-bit static Random Access Memory RAM organized as 1024 words of four bits each. Since the operation of the F 2 1 14 is entirely
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4096-bit
F2114
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tms4045
Abstract: TMS2114-45 texas 74 series TTL logic gates 2114 static ram TMS2114-20 74 ttl 74ls gate symbols 74LS series logic gates 3 input or gate TMS2114 TMS2114-25
Text: T M S 2114, TMS2114L 1024 WORD BY 4-BIT STATIC RAMS DECEMBER 1 9 7 9 - REVISED A U G U ST 1 9 8 3 T M S 2 1 1 4 , T M S 2 1 1 4 L . . . NL P AC KA G E TO P V IE W Previously Called TMS4045/TMS40L45 1 0 2 4 X 4 Organization Single + 5 - V Supply Fully Static Operation (No Clocks, No
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TMS2114,
TMS2114L
1024-WDRD
TMS4045/TMS40L45
300-mil
18-Pin
TMS2114.
TMS2114-15,
TMS2114L-1
tms4045
TMS2114-45
texas 74 series TTL logic gates
2114 static ram
TMS2114-20
74 ttl
74ls gate symbols
74LS series logic gates 3 input or gate
TMS2114
TMS2114-25
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Untitled
Abstract: No abstract text available
Text: Random-Access Memories RAMs MWS5114 a6 — I I8 “ VDD A5 — 2 I7 — A? * 4 - 3 I6 a 3 — 4 I - «8 I5 - A g CMOS 1024-Word by 4-Bit LSI Static RAM Ao — 5 I4 — I/O t Features: A| — 6 I3 — 1 / 0 2 7 I2 - I / O 3 • Fully static operation ■ In d u s try s ta n d a rd 1024 x 4 p in o u t (sam e as p in o u ts fo r 6514, 2114,
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MWS5114
1024-Word
30982R
92CS-3III4R2
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21140-AF
Abstract: 21140AF dec 21140 IA21140AF IA21140AF-PQF144I
Text: IA21140AF Preliminary Data Sheet PCI FAST ETHERNET LAN CONTROLLER innovASIC Features • • • • • • • • • • • • Form, Fit and Function Compatible with the DEC 21140AF Available in 144 Pin PQFP Package Integrated Ethernet controller with PCI bus interface
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Original
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IA21140AF
21140AF
ENG210010110-00
IA21140AF-PQF144I
21140-AA
21140-AE
21140-AF
21140-AF
21140AF
dec 21140
IA21140AF
IA21140AF-PQF144I
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PDF
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ic 2114
Abstract: 2114 static ram memory ic 2114 pin out
Text: SEMI 2114 STATIC, TTL IN/OUT 1024x4 N-MOS RAM's FEATURES • 1024 words x 4 bits • Three access times 200, 300, and 450 nsec • Low operating power — 175 mW typical • Common output bus • Three-state output drivers • Fully STATIC — no clock or refresh
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1024x4
18-pin
ic 2114
2114 static ram
memory ic 2114 pin out
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PDF
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9114 RAM
Abstract: 9114 static ram AM9124 RAM 9114 AM9114 91L14 2114 static ram AM9114C KS000010 AM91L14B
Text: a Advanced Micro Devices A m 9 1 1 4 /A m 9 1 L 1 4 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • Low operating and standby power Access tim es down to 200 rts Am9114 is a direct plug-in replacem ent fo r 2114 • • High output drive: 3.2-mA sink current @ 0.4 V
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Am9114/Am91
1024x4
Am9114
Am9114/Am91t-14
the14
opooq542
OPOOQ552
op000202
Am9114/Am91L14
9114 RAM
9114 static ram
AM9124
RAM 9114
91L14
2114 static ram
AM9114C
KS000010
AM91L14B
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PDF
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2114A-4
Abstract: BIT 3195 G intel 2114a memory ic 2114a V/2114A
Text: in te i 2114A 1024 X 4 BIT STATIC RAM 2114AL-1 2114AL-2 2114AL-3 2114AL-4 2114A-4 2114A-5 100 120 150 200 200 250 40 40 40 40 70 70 Max. Access Tima na Max. Currant (mA) • HMOS Technology ■ Low Power, High Speed ■ Directly TTL Compatible: All Inputs
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2114AL-1
2114AL-2
2114AL-3
2114AL-4
114A-4
114A-5
4096-bit
2114A-4
BIT 3195 G
intel 2114a
memory ic 2114a
V/2114A
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PDF
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Untitled
Abstract: No abstract text available
Text: SRAM MOTOROLA 4096-BIT STATIC RANDOM ACCESS MEMORY MOS The M C M 2114 is a 4096-bit random access m em o ry fabricated w ith h igh den sity, high reliability N -channel s<licon-gate tec h n o lo g y . For ease o f use, the device operates fro m a sin gle pow er supply, is d irectly
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4096-BIT
18-pin
MCM2114
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PDF
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intel 2114 static ram
Abstract: intel 2114a 2114A-4 intel 2114 2114A intel 2114 1024 4 bit 2114AL-4 2114 static ram intel 2114AL-2 2114AL-3
Text: intei 2114A 1024 X 4 BIT STATIC RAM 2114AL-1 2114AL-2 2114AL-3 2114AL-4 2114A-4 2114A-5 100 120 150 200 200 250 40 40 40 70 70 Max. Access Time ns 40 Max. Current (mA) Completely Static Memory • No Clock or Timing Strobe Required • HMOS Technology ■ Low Power, High Speed
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2114AL-1
2114AL-2
2114AL-3
2114AL-4
114A-4
114A-5
4096-bit
intel 2114 static ram
intel 2114a
2114A-4
intel 2114
2114A
intel 2114 1024 4 bit
2114 static ram intel
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PDF
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S2114
Abstract: S211 2114L 2114 static ram RAM 2114 vmos S2114-1 S2114-2 S2114-3 S2114A-1
Text: AMI S 2114 40 96 BIT 1024x4 STATIC V M O S RAM Features G eneral D escription □ High Speed Operation: Access Time: 150ns Maximum (-1 ) The AMI S2114 is a 4096 bit fully static RAM organ ized as 1024 words by 4 bits. The device is fully TTL compatible on all inputs and outputs and has a single
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S2114
1024x4)
150ns
S211
2114L
2114 static ram
RAM 2114
vmos
S2114-1
S2114-2
S2114-3
S2114A-1
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PDF
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AM91L148
Abstract: 9114 RAM AM81H 91L14
Text: A m 9 1 1 4 /A m 9 1 L 1 4 “ " 1024x4 Static RAM S Devices DISTINCTIVE CHARACTERISTICS • • • Low operating and standby power Access times down to 200 ns Am9114 is a direct plug-in replacement for 2114 • • High output drive: 3.2-mA sink current @ 0.4 V
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1024x4
Am9114
Am9114/Am91L14
OP000542
OP000552
AM91L148
9114 RAM
AM81H
91L14
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PDF
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CXD1199AQ
Abstract: MA10 MA11 MA12 MA13 MA15
Text: CXD1199AQ CD-ROM DECODER For the availability of this product, please contact the sales office. Description The CXD1199AQ is a CD-ROM decoder LSI with a built-in ADPCM decoder. Features • Supports CD-ROM, CD-I and CD-ROM XA formats • Real-time error correction
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CXD1199AQ
CXD1199AQ
100PIN
QFP-100P-L01
QFP100-P-1420
42/COPPER
MA10
MA11
MA12
MA13
MA15
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