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    MESA DIE Search Results

    MESA DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL70062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL70061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    HS0-26CT31RH-Q Renesas Electronics Corporation Radiation Hardened Quad Differential Line Drivers, DIE, / Visit Renesas Electronics Corporation

    MESA DIE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    microsemi TVS

    Abstract: MicroNote
    Text: MicroNote Series 118 by Mel Clark and Kent Walters, Microsemi Scottsdale TVS/Chip Product Overview Microsemi’s offerings of TVS chip size products include: TVS/Chip Passivated TVS/Chip types of: a planar, b) mesa and c) bidirectional mesa are illustrated


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    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR 1C6622 TECHNICAL DATA DATASHEET 345, REV B SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Glass passivated Epitaxial Diode with Mesa Structure


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    1C6622 PDF

    1C5552

    Abstract: No abstract text available
    Text: 1C5552 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4312, REV- STANDARD RECOVERY SILICON RECTIFIER DIE Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • Glasspassivated Epitaxial Diode with Mesa Structure


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    1C5552 1C5552 PDF

    AZ100ELT20

    Abstract: ESD process
    Text: ARIZONA MICROTEK, INC. 1630 S. Stapley Dr., Suite 125, Mesa, AZ 85204 +1 480 962-5881 FAX +1(480) 890-2541 www.azmicrotek.com PRODUCT CHANGE NOTIFICATION PCN NUMBER: 022503 DATE: 23 July 2003 SUBJECT: AZM CHANGE NOTIFICATION REGARDING AZ10/100ELT20X (die)


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    AZ10/100ELT20X AZ100ELT20, -16VT, AZ100ELT20 ESD process PDF

    CPD15

    Abstract: mesa die
    Text: PROCESS CPD15 Central Ultra Fast Rectifier TM Semiconductor Corp. 500mA Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 25 x 25 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 14.5 x 14.5 MILS Top Side Metalization


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    CPD15 500mA CBRHDU-02 19-September CPD15 mesa die PDF

    1N4933

    Abstract: 1N4937 1N4942 1N4948 1N5615 1N5623 CMR1F-02M CPD24
    Text: PROCESS CPD24 Central Fast Recovery Rectifier TM Semiconductor Corp. 1.0 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 10.6 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization


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    CPD24 1N4933 1N4937 1N4942 1N4948 1N5615 1N5623 CMR1F-02M 1N4937 1N4948 1N5623 CPD24 PDF

    CPD26

    Abstract: No abstract text available
    Text: PROCESS CPD26 Central Fast Recovery Rectifier TM Semiconductor Corp. 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 10.6 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization


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    CPD26 CPD26 PDF

    1N5185

    Abstract: 1N5188 1N5415 1N5420 CPD25
    Text: Central PROCESS TM Semiconductor Corp. CPD25 Fast Recovery Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 10.6 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization


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    CPD25 1N5185 1N5188 1N5415 1N5420 1N5188 1N5420 CPD25 PDF

    1N5400

    Abstract: 1N5408 1N5550 1N5554 1N5624 1N5627 CMR3-02 CPD06
    Text: PROCESS CPD06 Central General Purpose Rectifier TM Semiconductor Corp. 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 10.4 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization


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    CPD06 1N5400 1N5408 1N5550 1N5554 1N5624 1N5627 CMR3-02 1N5408 1N5554 1N5627 CPD06 PDF

    1N5806

    Abstract: UES1101 mesa die 1N5802 CMR3U-01 CPD17 UES1106
    Text: PROCESS CPD17 Central Ultra Fast Rectifier TM Semiconductor Corp. 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization


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    CPD17 1N5802 1N5806 UES1101 UES1106 CMR3U-01 19-September 1N5806 mesa die CPD17 UES1106 PDF

    1N5811

    Abstract: 1N5807 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
    Text: PROCESS CPD18 Central Ultra Fast Rectifier TM Semiconductor Corp. 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization


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    CPD18 1N5807 1N5811 UES1301 UES1306 UES1401 UES1403 CUDD8-02 19-September 1N5811 CPD18 UES1306 UES1403 PDF

    1N645

    Abstract: 1N649 CBRHD-02 CPD04
    Text: PROCESS CPD04 Central General Purpose Rectifier TM Semiconductor Corp. 500 mA Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 25 x 25 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 14.5 x 14.5 MILS Top Side Metalization


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    CPD04 1N645 1N649 CBRHD-02 435-18Rectifier 1N649 CPD04 PDF

    1N4007

    Abstract: 1n5614 1N5622 1N4007 details 1n5062 equivalent 1N3611 1N3614 1N4001 1N4245 1N4249
    Text: PROCESS CPD05 Central General Purpose Rectifier TM Semiconductor Corp. 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization


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    CPD05 1N3611 1N3614 1N4001 1N4007 1N4245 1N4249 1N5059 1N5062 1N5391 1N4007 1n5614 1N5622 1N4007 details 1n5062 equivalent 1N3614 1N4249 PDF

    CMR1U-01

    Abstract: CMR1U-01M CPD16 UES1001 UES1003 UF4007
    Text: PROCESS CPD16 Central Ultra Fast Rectifier TM Semiconductor Corp. 1.0 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization


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    CPD16 UES1001 UES1003 UF4001 UF4007 CMR1U-01 CMR1U-01M 19-September CPD16 UES1003 UF4007 PDF

    UES1106

    Abstract: data sheet 1N5806 1N5802 1N5806 CMR3U-01 CPD17 UES1101
    Text: PROCESS CPD17 Ultra Fast Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization


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    CPD17 1N5802 1N5806 UES1101 UES1106 CMR3U-01 24-August UES1106 data sheet 1N5806 1N5806 CPD17 PDF

    UF4007

    Abstract: uf4007 diode data sheet diode uf4007 CMR1U-01 CMR1U-01M CPD16 UES1001 UES1003
    Text: PROCESS CPD16 Ultra Fast Rectifier 1.0 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Au - 5,000Å Back Side Metalization


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    CPD16 UES1001 UES1003 UF4001 UF4007 CMR1U-01 CMR1U-01M 24-August 631assivated UF4007 uf4007 diode data sheet diode uf4007 CPD16 UES1003 PDF

    diode BYW 85

    Abstract: BYW89 diodes byw 86 diode BYW 60 N5626 diode BYW 200 813BB diode BYW BYW 89 BYW 90
    Text: BYW 82 STBYW 86 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Leistungsgleichrichter Applications: Power re ctifie r Besondere Merkmale: Features: • Kontrolliertes- Avalancheverhalten • H erm etische Glaspassivierung • G ute W ärm eableitung über die


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    diode byx

    Abstract: diode byx 65 400 byx 200 BYX 13 400 R 74137 76136 byx85
    Text: IB» BYX 82 O £s BYX 86 O 'W Silizium-Mesa-Dioden Silicon Mesa diodes Anwendung : Leistungsgleichrichter Applications: Pow er rectifier Features: Besondere Merkmale: • Herm etische Glasspassivierung • Hermetically sealed glass passivation • Gute Wärmeableitung über die


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    Diode BYW 56

    Abstract: tfk 731 BYW56 BYW 56 V diodes byw BYW 52 TFK 03 diodes diode BYW N5059 DIODE in 5060
    Text: m 'W ? BYW 52 E8 BYW 56 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Leistungsgleichrichter Applications: Power rectifier Besondere Merkmale: Features: • Stoßspannungsfest • Controlled avalanche characteristics • Hermetische G laspassivierung


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    BU226

    Abstract: transistor bu 226 w 4b 139 NPN transistor TO-3
    Text: Diffundierter Silizium-NPN-Mesa-Leistungstransistor Diffused Silicon NPN Mesa Power Transistor Anwendung: H orizontal-Ablenk-Endstufen in Schwarz-W eiß-Fernsehgeräten Application: H orizontal d e flection circu its in b la ck and white TV-receivers Besondere Merkmale:


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    BYV16

    Abstract: BYV 200v BYW 56 V BYV12
    Text: BYV12 ST BYV16 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Schneller Gleichrichter und Schalter z. B. für zeilenfrequenten Betrieb im Fern­ sehgerät und Schaltnetzteile. Applications: Fast rectifier and switch for example for TV-line output circuits and switch mode


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    BYV12 BYV16 BYV16 BYV 200v BYW 56 V BYV12 PDF

    BYW74

    Abstract: 175aa byw76
    Text: BYW 72 £8 BYW 76 'W Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Schneller Gleichrichter und Schalter z.B. für zeilenfrequenten Betrieb im Fern­ sehgerät und Schaltnetzteile. Applications: Fast rectifier and switch for example for TV-line output circuits and switch mode


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    byw 36 v

    Abstract: BYW32 byw 32 BYW 200 TU300 byw+36+v
    Text: w ► BYW 32 Ì? BYW 36 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: S ch n e lle r G le ic h ric h te r und S ch a lte r z. B. fü r zeilenfreq uen ten B etrieb im F e rn ­ sehgerät und Schaltnetzteile. Applications: Fast re ctifie r and sw itch for exam ple for TV-line output circuits and sw itch m ode


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    chip bonding die

    Abstract: MIL-STD-750 method 2073
    Text: Introduction General Semiconductor Industries, Inc. offers a complete line of TransZorb * transient voltage suppressor semiconductor chips in die and cell construction, utilizing mesa and planar processing. Chips are available in unidirectional and bidirectional polarity, voltages ranging


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    MIL-STD-750, 8/20JJ 037Die chip bonding die MIL-STD-750 method 2073 PDF