Ablebond 36-2
Abstract: Multicore Solders
Text: MTLS LTD ^ T - 3 /- A 5 " Three Five Product Information GaAs MESFET P35-1105 This New Generation MESFET has been designed for improved performance and is ideally suited for: Applications • Low noise amplifiers 12GHz • Tube drive amplifiers • Low noise oscillators
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P35-1105
12GHz
P35-1105-0
Ablebond 36-2
Multicore Solders
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95210
Abstract: No abstract text available
Text: Hl Alpha Low Noise GaAs MESFET Chip AFM02N6-000 Features Low Noise Figure, 1.0 dB at 12 GHz High Associated Gain, 9.5 dB at 12 GHz High MAG, > 12 dB at 12 GHz 0.25 |im Ti/Pt/Au Gates 400 600 500 1cm = 38.7jim Passivated Surface Description Alpha’s AFM02N6-000 low noise GaAs MESFET
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AFM02N6-000
AFM02N6-000
95210
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CI 7422
Abstract: AFM02N6-000
Text: ESAlpha Low Noise GaAs MESFET Chip AFM02N6-000 Features • Low Noise Figure, 1.0 dB @ 12 GHz ■ High Associated Gain, 9.5 dB @ 12 GHz ■ High MAG, >12 dB @ 12 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface Description 1 cm = 38.7 urn The AFM02N6-000 low noise GaAs MESFET chip has
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AFM02N6-000
AFM02N6-000
6/99A
CI 7422
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Untitled
Abstract: No abstract text available
Text: ALPHA I N D / SEMICONDUCTOR 33E D • OSASES DDOIOIS 5 «ALP T 'S i-^ S Ka-Band AF040N2-00 Low Noise MBE MESFET Features Description ■ ■ ■ ■ ■ ■ ■ ■ The AF040N2-00 is a .25 x 200 micron low noise MBE MESFET with E-beam written gates for excellent performance and high reproducibility.
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AF040N2-00
50lity.
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GaAs MESFET
Abstract: mesfet
Text: Section 1 GaAs FETs and PHEMTs Table of Contents Surface Mount GaAs M E S F E T . 1-3 Low Noise GaAs MESFET Chip .
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AFM06P2-000)
AFM08P2-000)
GaAs MESFET
mesfet
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Untitled
Abstract: No abstract text available
Text: MMIC AP201 Product Features Application • 50 ~ 1000MHz • GaAs MESFET MMIC • 40dBm Output IP3 • 14dB Gain • 21dBm P1 dB • SOT-89 Package • High Linearity Drive Amplifier Description Package Type: SOT-89 AP201 is a gain block amplifier designed with GaAs MESFET MMIC in a low cost SOT-89 package.
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AP201
1000MHz
40dBm
21dBm
OT-89
OT-89
AP201
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sot89 mmic 25
Abstract: ap201 mmic amplifier sot-89 mmic sot-89 AP-201 MESFET GaAs MMIC Gain Block sot-89
Text: MMIC AP201 Product Features Application • 50 ~ 1000MHz • GaAs MESFET MMIC • 40dBm Output IP3 • 14dB Gain • 21dBm P1 dB • SOT-89 Package • High Linearity Drive Amplifier Description Package Type: SOT-89 AP201 is a gain block amplifier designed with GaAs MESFET MMIC in a low cost SOT-89 package.
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AP201
1000MHz
40dBm
21dBm
OT-89
OT-89
AP201
sot89 mmic 25
mmic amplifier sot-89
mmic sot-89
AP-201
MESFET
GaAs MMIC Gain Block sot-89
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4435 ag
Abstract: 5q 1265 rf
Text: GENERAL PURPOSE GaAs MESFET FEATURES NOISE FIGURE & ASSOCIATED GAINvs.FREQUENCY - • NE76100 LOW NOISE FIGURE: Vds = 3 V, Id s = 10 mA NF = 0.8 dB typical at f = 4 GHz
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NE76100
E76100
NE76100
NE76100N
NE76100M
4435 ag
5q 1265 rf
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L to Ku Band Low Noise GaAs MESFET
Abstract: No abstract text available
Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B N0ISE FIGURE-a s s o c ia t e d - g a in vs. FREQUENCY
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NE67400
NE67483B
NE674is
L to Ku Band Low Noise GaAs MESFET
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08GHz
Abstract: No abstract text available
Text: Ordering number:ENN2671 GaAs Dual Gate MESFET 3SK189 UHF Amplifier, Mixer Application Package Dimensions • Low noise figure : 1.2dB typ 0.8GHz . · High voltage gain : 19dB typ (0.8GHz). · Capable of being operated from low voltage ; VDS=5V. unit:mm 2046A
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ENN2671
3SK189
3SK189]
08GHz
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3SK189
Abstract: No abstract text available
Text: Ordering number:ENN2671 GaAs Dual Gate MESFET 3SK189 UHF Amplifier, Mixer Application Package Dimensions • Low noise figure : 1.2dB typ 0.8GHz . · High voltage gain : 19dB typ (0.8GHz). · Capable of being operated from low voltage ; VDS=5V. unit:mm 2046A
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ENN2671
3SK189
3SK189]
3SK189
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QFN3
Abstract: D31044
Text: Active Down Mixer MO9Q Product Features Application • Integrated Monolithic GaAs MESFET • Active Mixer Packages Module • Pb-free 3mm 16-pin QFN package • Lower Manufacturing Cost • Higher Productivity and Reliability • Very Low Noise Figure & Low Distortion
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16-pin
QFN3
D31044
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Untitled
Abstract: No abstract text available
Text: Active Up Mixer MO4Q Product Features Application • Integrated Monolithic GaAs MESFET • Active Mixer Packages Module • Pb-free 3mm 16-pin QFN package • Lower Manufacturing Cost • Higher Productivity and Reliability • Very Low Noise Figure & Low Distortion
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16-pin
HHM1516
100pF
70MHz,
2230MHz
2300MHz
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NE76038
Abstract: uPC2710 uPC2721 AN1015 UPC2710T UPC2721GR low noise block down converter 1 henry INDUCTOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 L4* Low noise
Text: California Eastern Laboratories AN1015 APPLICATION NOTE Low Cost, High Performance Receiver For Wireless Applications INTRODUCTION down converter. The LNA was designed using a discrete low noise GaAs MESFET NE76038 with a matching structure made using discrete components. The NE76038 is fabricated
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AN1015
NE76038)
NE76038
uPC2710
uPC2721
AN1015
UPC2710T
UPC2721GR
low noise block down converter
1 henry INDUCTOR
POWER AMPLIFIER CIRCUIT DIAGRAM 10000
L4* Low noise
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QFN3
Abstract: HHM1516 HHM15 RFHIC MIXER SCHEMATIC DIAGRAM
Text: Active Up Mixer MO4Q Product Features Application • Integrated Monolithic GaAs MESFET • Active Mixer Packages Module • Pb-free 3mm 16-pin QFN package • Lower Manufacturing Cost • Higher Productivity and Reliability • Very Low Noise Figure & Low Distortion
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16-pin
QFN3
HHM1516
HHM15
RFHIC
MIXER SCHEMATIC DIAGRAM
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RFCA8818
Abstract: RFMD 1500
Text: RFMD . RFCA8818 Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier The RFMD® RFCA8818 is a low noise, linear high performance GaAs MESFET MMIC amplifier. The RFCA8818 contains two amplifiers for use in wideband push-pull CATV amplifiers requiring
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RFCA8818
40MHz
1008MHz
RFCA8818
RFMD 1500
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sem 2106
Abstract: 4957 GM
Text: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package FEATURES NE76118 NOISE FIGURE & AS SO CIATED GAIN v s . FREQUENCY LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) m LOW NOISE FIGURE: < CD 0.8 dB typical at 2 GHz c cd HIGH ASSOCIATED GAIN: CD
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OT-343)
NE76118
NE76118
NE76118-TI
sem 2106
4957 GM
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GM15
Abstract: 137 marking Micro-X
Text: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power
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CFY25
CFY25-P
CFY25-23
CFY25-23P
CFY25-20
CFY25-20P
CFY25-nnl:
QS9000
GM15
137 marking Micro-X
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FPD1500SOT89
Abstract: FPD2250SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures
Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency
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FPD2250SOT89
FPD2250SOT8
FPD2250SOT89E:
31dBm
44dBm
FPD2250SOT89
25mx1500m
FPD2250SOT89E
EB2250SOT89CE
EB2250SOT89CE-BC
FPD1500SOT89
FPD2250SOT89E
TRANSISTOR SSG 111
oint 4410
HBT transistor s parameters measures
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35 micro-X Package MARKING CODE Q
Abstract: transistor equivalent book FOR D 1047 zo 607 MA marking code s22 microwave transistor siemens transistor GaAS marking 576 zo 607 CFY25 CFY25-20 CFY25-20P
Text: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power
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CFY25
CFY25-P
CFY25-23
CFY25-23P
CFY25-20
CFY25-20P
CFY25-nnl:
QS9000
35 micro-X Package MARKING CODE Q
transistor equivalent book FOR D 1047
zo 607 MA
marking code s22
microwave transistor siemens
transistor GaAS marking 576
zo 607
CFY25
CFY25-20
CFY25-20P
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NE76038
Abstract: NE76038-T1
Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES_ • NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY LOW NOISE FIGURE: V ds = 3 V, Ids = 10 m A 1.8 dB typical at 12 GHz • NE76038 * HIGH ASSOCIATED GAIN: I I I I- r 24
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NE76038
NE76038
-J22L
NE76038-T1
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marking code s22
Abstract: zo 607 MA CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23P CFY25-P
Text: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power
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CFY25
CFY25-P
CFY25-23
CFY25-23P
CFY25-20
CFY25-20P
CFY25-nnl:
QS9000
marking code s22
zo 607 MA
CFY25
CFY25-20
CFY25-20P
CFY25-23
CFY25-23P
CFY25-P
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hp 1458
Abstract: SGF33 3048A sb wa 340
Text: Ordering number : ENN7196A SGF33 N-Channel GaAs MESFET SGF33 For C to Ku-Band Local Oscillator and Amplifier Features • • • • Package Dimensions Low phase noise. Highly reliable protection film. Automatic surface mounting supported. MCPH4 package.
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ENN7196A
SGF33
SGF33]
hp 1458
SGF33
3048A
sb wa 340
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DCS1800
Abstract: SLM-20T smdi
Text: SLM-20T Y SLM-20T(Y) 1700 MHz to 2000MHz High Linearity Low Noise Amplifier Module 1700MHz to 2000MHz HIGH LINEARITY LOW NOISE AMPLIFIER MODULE NOT FOR NEW DESIGNS RoHS Compliant (Y Part Number) Product Description Features GaAs HBT DE GaAs MESFET
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SLM-20T
2000MHz
1700MHz
2000MHz
30dBm
DCS1800
smdi
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