METAL 2N2222 Search Results

METAL 2N2222 Result Highlights (5)

Part	Manufacturer	Description
TPHR7404PU	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL

METAL 2N2222 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
B2030 Abstract: B-2030 Text: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlay contact.	Original	PDF	MBR2030CTL 2N2222 2N6277 1N5817 B2030 B-2030
MBR2030CTLG Abstract: No abstract text available Text: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier The MBR2030CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal	Original	PDF	MBR2030CTL MBR2030CTL 2N2222 2N6277 1N5817 MBR2030CTLG
MBR2030CTLG Abstract: 2N2222 B2030 Text: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier The MBR2030CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal	Original	PDF	MBR2030CTL MBR2030CTL MBR2030CTL/D MBR2030CTLG 2N2222 B2030
2N2222 Abstract: 2N6277 Text: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact.	Original	PDF	MBR2030CTL r14525 MBR2030CTL/D 2N2222 2N6277
B2030 Abstract: 2n22222 1N5817 2N2222 2N6277 MBR2030CTL B-2030 Text: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact.	Original	PDF	MBR2030CTL r14525 MBR2030CTL/D B2030 2n22222 1N5817 2N2222 2N6277 MBR2030CTL B-2030
MBR2030CTLG Abstract: No abstract text available Text: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier The MBR2030CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal	Original	PDF	MBR2030CTL MBR2030CTL MBR2030CTL/D MBR2030CTLG
FN1016 Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016 Text: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773	Original	PDF	2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 2N2222A 2N2369 2N2369A FN1016 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
CDIL 2N2222 Transistor Abstract: 2N2222 TO-18 s parameters of 2N2222 pin configuration transistor 2N2222 2N2222 2N2222 cdil data sheet transistor 2n2222 PIN CONFIGURATION 2N2222 CDIL 2N2222 2N2221 Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO	Original	PDF	ISO/TS16949 2N2221 2N2222 C-120 2222Rev 310303E CDIL 2N2222 Transistor 2N2222 TO-18 s parameters of 2N2222 pin configuration transistor 2N2222 2N2222 2N2222 cdil data sheet transistor 2n2222 PIN CONFIGURATION 2N2222 CDIL 2N2222
CDIL 2N2222 Transistor Abstract: pin configuration transistor 2N2222 transistor 2N2222 2N2222 2N2221 Metal 2n2222 PIN CONFIGURATION 2N2222 s parameters of 2N2222 2N2221-2N2222 2N2222 transistor Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L- 000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION	Original	PDF	2N2221 2N2222 C-120 2222Rev 210403E CDIL 2N2222 Transistor pin configuration transistor 2N2222 transistor 2N2222 2N2222 Metal 2n2222 PIN CONFIGURATION 2N2222 s parameters of 2N2222 2N2221-2N2222 2N2222 transistor
2N2222A metal package Abstract: 2N2221A-2N2222A of 2N2222A Text: Small Signal General Purpose Transistors NPN 2N2221A/2N2222A Small Signal General Purpose Transistors (NPN) Features • Switching and Linear Application DC and VHF Amplifier Application • RoHS Compliant TO-18 Mechanical Data TO-18, Metal can package Case:	Original	PDF	2N2221A/2N2222A MIL-STD-202, 2N2221A 2N2222A 2N2222A metal package 2N2221A-2N2222A of 2N2222A
2N2221 Abstract: 2N2222 s parameters of 2N2222 2N2222 application notes 2N2221-2N2222 2N2222 transistor PIN CONFIGURATION 2N2222 2N2222 base capacitance 2N2222, CDIL Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package Switching and Linear Application DC and VHF Amplifier Applications	Original	PDF	2N2221 2N2222 2N2221, C-120 2N2221 22Rev290801 2N2222 s parameters of 2N2222 2N2222 application notes 2N2221-2N2222 2N2222 transistor PIN CONFIGURATION 2N2222 2N2222 base capacitance 2N2222, CDIL
2n2222 jan Abstract: 2N2222 Text: 2N2222 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.8A All Semelab hermetically sealed products	Original	PDF	2N2222 O206AA) 19-Jun-02 2n2222 jan 2N2222
2n2222 jan Abstract: No abstract text available Text: 2N2222 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.8A All Semelab hermetically sealed products	Original	PDF	2N2222 O206AA) 16-Jul-02 2n2222 jan
PIN CONFIGURATION 2N2222 Abstract: 2n2222 2N2222 application notes 2n2222 npn bipolar junction Metal 2n2222 Datasheet 2N2222 transistor NPN transistor 2n2222 tr 2n2222 2N2222 WITH PIN NUMBER Multicomp 2N2222 Text: 2N2222 Low Power Bipolar Transistors Features: • NPN Silicon Planar Switching Transistors. • Switching and Linear application DC and VHF Amplifier applications. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40	Original	PDF	2N2222 PIN CONFIGURATION 2N2222 2n2222 2N2222 application notes 2n2222 npn bipolar junction Metal 2n2222 Datasheet 2N2222 transistor NPN transistor 2n2222 tr 2n2222 2N2222 WITH PIN NUMBER Multicomp 2N2222

2N2221 Abstract: 2N2222 2N2221-2N2222 2N2222 tO 2N2222, CDIL 2N2222 application notes 2N22212 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package Switching and Linear Application DC and VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise	Original	PDF	2N2221 2N2222 2N2221, C-120 2N2221 22Rev290801 2N2222 2N2221-2N2222 2N2222 tO 2N2222, CDIL 2N2222 application notes 2N22212
1040B Abstract: 2N3910 svt6062 2n5100 Text: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.	OCR Scan	PDF	1020B 15X19 3kA/10kA/I0kA 3kA/10kA/10kA 2N6674 2N6675 2N6676 2N6677 1040B 2N3910 svt6062 2n5100
EQUIVALENT TRANSISTOR bc108 Abstract: bc109 equivalent BC107 equivalent transistors transistor t05 equivalent transistor of 2n2219a BC177 equivalent BC107 equivalent bc325 bc143 BC107 Text: Metal Can Metal Can Product Variations Low Level General Purpose Amplifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads—38,1mm (1,5in) at a small extra	OCR Scan	PDF	BCW35GP. BS9365 2N4036 2N4037 BS3365 2N4030 EQUIVALENT TRANSISTOR bc108 bc109 equivalent BC107 equivalent transistors transistor t05 equivalent transistor of 2n2219a BC177 equivalent BC107 equivalent bc325 bc143 BC107
BC177 NPN transistor Abstract: BC178 TRANSISTOR bc108 bc325 bf179 BF177 transistor NPN BC178 applications of Transistor BC108 BC326 BFQ35 Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra	OCR Scan	PDF	BCW35GP. BFQ36 BF257/8/9 BFQ37 2N2218 2N2904 2N2218A 2N2904A 2N2219 2N2905 BC177 NPN transistor BC178 TRANSISTOR bc108 bc325 bf179 BF177 transistor NPN BC178 applications of Transistor BC108 BC326 BFQ35
C495 transistor Abstract: C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633 Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a sm all extra	OCR Scan	PDF	BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
bc109 equivalent Abstract: BC107 equivalent transistors EQUIVALENT TRANSISTOR bc108 bc108 equivalent BC177 equivalent BC107 equivalent BC178 equivalent equivalent of BC178 2n3963 equivalent transistor equivalent bc108 Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. D evice Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra	OCR Scan	PDF	BCW35GP. BFX84 BFX85 BFX86 BCY78 BCY79 BCY58 BCY59 2N720A BC325 bc109 equivalent BC107 equivalent transistors EQUIVALENT TRANSISTOR bc108 bc108 equivalent BC177 equivalent BC107 equivalent BC178 equivalent equivalent of BC178 2n3963 equivalent transistor equivalent bc108
C495 transistor Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra	OCR Scan	PDF	BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
2N2222A Abstract: J 2N2222A Transistor 2N2222A 2N2222A npn transistor 2N2221A 2N2221A-2N2222A BR 2N2222A NPN 2N222 2n2222a transistor Metal 2n2222a Text: 2N2221A, 2N2222A NPN Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching mox.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings	OCR Scan	PDF	2N2221A, 2N2222A 2N2222A 2N2221A J 2N2222A Transistor 2N2222A 2N2222A npn transistor 2N2221A-2N2222A BR 2N2222A NPN 2N222 2n2222a transistor Metal 2n2222a
2N2222 circuit Abstract: 2N2222 npn 2N2222 2n2222 test circuit 2N2222 base capacitance Text: 2N2222 NPN Silicon Epitaxial Planar Transistor with high cutoff frequency, for high speed switching mox.0.5^ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings	OCR Scan	PDF	2N2222 2N2222 circuit 2N2222 npn 2N2222 2n2222 test circuit 2N2222 base capacitance
Untitled Abstract: No abstract text available Text: 2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2219A and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to	OCR Scan	PDF	2N2219A 2N2222A 2N2219A 2N2222A 2N2219A) 2N2222A) 500mA,

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METAL 2N2222 Search Results

METAL 2N2222 Result Highlights (5)

METAL 2N2222 Datasheets Context Search

B2030

MBR2030CTLG

MBR2030CTLG

2N2222

B2030

MBR2030CTLG

FN1016

CDIL 2N2222 Transistor

CDIL 2N2222 Transistor

2N2222A metal package

2N2221

2n2222 jan

2n2222 jan

PIN CONFIGURATION 2N2222

2N2221

1040B

EQUIVALENT TRANSISTOR bc108

BC177 NPN transistor

C495 transistor

bc109 equivalent

C495 transistor

2N2222A

2N2222 circuit

Untitled