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    MG100H2 Search Results

    MG100H2 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG100H2CK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG100H2CK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100H2CK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100H2CL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG100H2CL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100H2CL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100H2DL2 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG100H2DL2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100H2DL2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100H2YL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG100H2YL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100H2YL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100H2YL1 Westcode Semiconductors NPN transistor for high power switching and notor control applications, 600V, 100A Scan PDF
    MG100H2YS1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG100H2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100H2ZS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    MG100H2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    tbf819

    Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
    Text: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表 次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 保守品種 1 形 名 代替品種 形 名 代替品種


    Original     		PDF 04AZ3 02CZ3 1SV186 1SV245 2SC2391 05AZ3 1SV204 1SV216 2SC2483 tbf819 mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A

    mg75n2ys40

    Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
    Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種


    Original     		PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} TD 9097250 TOSHIBA DISCRETE/OPTO $ O ifììb i BE|.ciOcì7aSD DOlbSbS 90D 16265 SEMICONDUCTOR DT-33“35‘ MG10ÓH2CL1 MG100H2DL2 TECHNICAL DATA MGI00H2CL1 Weight : 205g Unit in m El 63 lisL a5 JAPA'N CZ ll?f\ 158 I17.S 6-MS 4,-05.*


    OCR Scan     		PDF DT-33â MG100H2DL2 MGI00H2CL1 DISCRETE/OPT03-_ 1626R MG100H2CL1

    MG100H2YS1

    Abstract: No abstract text available
    Text: GTR MODULL SILICON N CHANNEL IGBT MG100H2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf = 1. O/js M a x . trr= 0 . 5 y s ( M a x .) . Low Saturation Voltage : V c E ( s a t )=5.O V (


    OCR Scan     		PDF MG100H2YS1 MG100H2YS1

    MG100H2DL2

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100H2DL2 HIGH POWER SWITCHING APPLICATIONS. Unit in 1&8±0.5 MOTOR CONTROL APPLICATIONS. 4 -0 5 4 ± q .5 FEATURES: . The Collector is Isolated from Case. . W i t h Built-in Free Whee l i n g Diodes . H i g h DC Current Gain


    OCR Scan     		PDF MG100H2DL2 MG100H2DL2

    MG100H2CL1

    Abstract: ic 741 free MG100H2CL
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100H2CL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-05,3±Ol5 FEATURES : . The Collector is Isolated from Case. . With Built-in Free Wheeling Diodes . High DC Current Gain : hFE= 80 Min. (Ic=100A)


    OCR Scan     		PDF MG100H2CL1 T-jS125` MG100H2CL1 ic 741 free MG100H2CL

    dc motor control 100A

    Abstract: A751 80-LI
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100H2YL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector :is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hyE=80 Min (Ic=100A) . Low Saturation Voltage


    OCR Scan     		PDF MG100H2YL1 dc motor control 100A A751 80-LI

    MG100H2CK1

    Abstract: mg100h2ck MG100H2
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100H2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diodes . High DC Current Gain : hFE=200 Min. (IC=100A) . Low Saturation Voltage: VcE(sat)= 2 .5V(Max.)


    OCR Scan     		PDF MG100H2CK1 G100H2CK1 MG100H2CK1 mg100h2ck MG100H2

    MG100H2YL1

    Abstract: IP100A
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100H2YL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hpE=80 Min (lC= 100A) . Low Saturation Voltage


    OCR Scan     		PDF MG100H2YL1 550CJE MG100H2YL1 IP100A

    MG100H2YS1

    Abstract: A756
    Text: GTR MODULE SILICON N CHANNEL IGBT MG100H2YS1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 4-PAST-ON -TAB + 1 1 0 FEATURES: . High Input Impedance . High Speed : tf=1.0tfs Max. trr“0-5fis(Max.) . Low Saturation Voltage : VcE(sat)=5.0V(Max.)


    OCR Scan     		PDF MG100H2YS1 MG100H2YS1 A756

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    MG30H1BL1

    Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
    Text: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL


    OCR Scan     		PDF 2SD1314* MG50G1BL3 MG30G18L4 MG15H1AL1 S3885* MG30H1BL1 MG100G1AL3 MG100G1FL1 MG150H1FL1 MG200H1FL1A S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 A1015 MG50G6EL9 MG150H2YL1

    MG150H2YL1

    Abstract: MG100H2CK1 MG200H2CK1 MG100H2CL1 MG100Q2YK1 MG100G2CL1 MG150G2YL1 MG100G2YL1 MG80S2YK1 MG75M2CK1
    Text: - 220 ÍN P N . 2 Ê ^ lt f ^ SI B l E li ¿B2 B. V c BO V CE X SUS) -k V EBO (T . 'Ê. c CP B F ( lu s ) (V ) (V ) E 1/C 2 B2 E2¿ (V ) (A ) (A ) (A ) (A ) py Pc = 2 5 °C ) T , T ., (la s ) (a n (A ) (W ) C C ). (°C ) V „ , Te % CBO (m A ) Ci£2)


    OCR Scan     		PDF H-101 MG150H2YL1 MG100H2CK1 MG200H2CK1 MG100H2CL1 MG100Q2YK1 MG100G2CL1 MG150G2YL1 MG100G2YL1 MG80S2YK1 MG75M2CK1

    30U6P42

    Abstract: MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z
    Text: 1. Power MOS-FETs and C4 . Resistors R2 and R 3 are used to balance the C3 and C4 voltages and 20ki2 is used here as the resistance value. C3 and C4 each have a capacitance o f 470juf. 2 Auxiliary power supply for the control cir­ cuit The switching regulator IC TA76524P which


    OCR Scan     		PDF 24VDC 110VAC 100kHz TA76524P 2SK358 100VAC MG15N6EK1 MG25M2YK1X3 30U6P42 MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z

    5V power supply using bridge rectifier circuit diagram

    Abstract: TF1202 MG100H2DL2 optical Driver MZ 4G4B
    Text: SOLID STATE GTR DRIVER MODULE TF1202 Unit in mm TOSHIBA TF1202 is the GTR driver designed for use with TOSHIBA Giant Transistor Module and it includes the optical isolator and GTR driver circuit. Using this driver, you can design high reliability and compact system.


    OCR Scan     		PDF TF1202 TF1202 -----------------------------------TF1202 MG100H2DL2 2SC1815 4G4B41 N4001x 5V power supply using bridge rectifier circuit diagram optical Driver MZ 4G4B

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA J {DISCRETE/OPTO} 9097250 TOSHIBA tfoiìììbu m D eT | T O T 75-50 9 0 D 16270 <DISCRETE/OPTO SEMICONDUCTOR DDlti57D D T -3 3 - 3 5 TOSHIBA GTR MODULE MG 10 0H 2C K 1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		PDF DDlti57D IC-100A) DT-33 MG100H2CK1 R373RSE EGA-MC100H2CKI-4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOD- TD 9097250 TOSHIBA DISCRETE/OPTO T O S H IB A T0T7SSD DDltiDSS 0 90D 16022 SEMICONDUCTOR DT"33 '35 TOSHIBA GTR MODULE MG100G2YL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG100G2YL1 G100H

    MG150H2DL1

    Abstract: MG100G2DL1 MG30G2DL1 MG100G2DL MG50G2DL1 MG75G2DL1 MG100H2DL2 2-98C2A 408 npn
    Text: — 216 — N P N , h y f ’— ' l v y y f ë f â . 2 f f lf t 8 - h 7 ' s i / 7^ 9 2 flf iï* l o 9 ' ~ 'J y o 7 ’J — j M o a ô È t i9 » « 8 K S H f f lU B •9 ' * t — K f t d l -1 E l o iy ± C2 JL y + Y ? ( ^ s ^ t c T ) C l Y f Î


    OCR Scan     		PDF -25-C) MG50G2DL1 MG75G2DL1 H-101 MG150H2DL1 MG100G2DL1 MG30G2DL1 MG100G2DL MG100H2DL2 2-98C2A 408 npn

    Snubber circuit Design

    Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
    Text: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very


    OCR Scan     		PDF 30U6P42 50U6P43 75U6P43 100U6P43 Snubber circuit Design MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


    OCR Scan     		PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1

    MG100g2ys1

    Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
    Text: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series


    OCR Scan     		PDF EG50N2YS9* G15N2YSI MG25N2YS1 MG50N2YS1 G35Q2YSI MG25Q2YS1 MG50Q2YS1 MG25S2YS1 G25N1JS1 G50N1JS1 MG100g2ys1 mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1