MG150J2YS50
Abstract: mg150j2y diode bridge toshiba MG150J2YS IGBT MG150J2YS50
Text: MG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case High input impedance Includes a complete half bridge in one package Enhancement-mode
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MG150J2YS50
2-95A1A
000707EAA2
MG150J2YS50
mg150j2y
diode bridge toshiba
MG150J2YS
IGBT MG150J2YS50
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MG150J1JS50
Abstract: mg150j1
Text: MG150J1JS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1JS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode
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MG150J1JS50
2-95A2A
MG150J1JS50
mg150j1
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Untitled
Abstract: No abstract text available
Text: MG150J7KS60 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS60 600V/150A 7in1 High Power Switching Applications Motor Control Applications • Integrates inverter and brake power circuit into a single package • The electrodes are isolated from case.
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Original
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MG150J7KS60
00V/150A
2-108G1B
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PDF
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Untitled
Abstract: No abstract text available
Text: MG150J7KS60 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J7KS60 600V/150A 7in1 High Power Switching Applications Motor Control Applications • Integrates inverter and brake power circuit into a single package • The electrodes are isolated from case.
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Original
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MG150J7KS60
00V/150A
2003-1are
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PDF
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MG150J7KS60
Abstract: No abstract text available
Text: MG150J7KS60 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J7KS60 600V/150A 7in1 High Power Switching Applications Motor Control Applications • Integrates inverter and brake power circuit into a single package • The electrodes are isolated from case.
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Original
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MG150J7KS60
00V/150A
2-108G1B
MG150J7KS60
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PDF
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mg150j2ys50
Abstract: No abstract text available
Text: MG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case l High input impedance l Includes a complete half bridge in one package l Enhancement-mode
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Original
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MG150J2YS50
2-95A1A
000707EAA2
mg150j2ys50
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PDF
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MG150J7KS50
Abstract: No abstract text available
Text: MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l 7 IGBTs built into 1 package. l Enhancement-mode l High speed type IGBT :
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Original
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MG150J7KS50
2-110A1B
MG150J7KS50
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PDF
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MG150J7KS60
Abstract: No abstract text available
Text: MG150J7KS60 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS60 600V/150A 7in1 High Power Switching Applications Motor Control Applications • Integrates inverter and brake power circuit into a single package · The electrodes are isolated from case. ·
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Original
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MG150J7KS60
00V/150A
MG150J7KS60
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PDF
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MG150J1ZS50
Abstract: No abstract text available
Text: MG150J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1ZS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode
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Original
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MG150J1ZS50
2-95A3A
MG150J1ZS50
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PDF
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ic 393
Abstract: No abstract text available
Text: TOSHIBA MG150J1JS50 MG1 50J1JS50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT HIGH P O W ER SWITCHING APPLICATIONS. U nit in mm M O TO R CONTROL APPLICATIONS. 2 - ¿5 .« ± 0 .3 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One
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OCR Scan
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MG150J1JS50
50J1JS50
30//s
15/iS
ic 393
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MG150J2YS1
Abstract: No abstract text available
Text: GTR MODULE SILICON N CHANNEL IGBT MG150J2YS1 HIGH P OWER S W I T C H I N G APPLICATIONS. M O T O R C O N TROL APP LICATIONS. . High Input Impedance . High Speed : tf~0. 35jis Max. trr-O.25 m 5 (Max.) . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode
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OCR Scan
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MG150J2YS1
35jis
MG150J2YS1
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG150J7KS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 150J7KS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • • The Electrodes are Isolated from Case. High Input Impedance 7 IGBTs Built into 1 Package.
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OCR Scan
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MG150J7KS50
150J7KS50
6o----12
16o----
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PDF
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50J2Y
Abstract: 50J2YS50
Text: T O SH IB A MG150J2YS50 MG1 50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2 - f S S A ± 0 .3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One
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OCR Scan
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MG150J2YS50
50J2YS50
2-95A1A
50J2Y
50J2YS50
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA MG150J1BS11 M G 15 0 J 1 B S 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=1.0,«s Max. (Ie = 150A) Low Saturation Voltage : V q e (sat) = 2.7V (Max.) (Iq = 150A)
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OCR Scan
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MG150J1BS11
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PDF
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G150J2YS50
Abstract: MG150J2YS50
Text: MG150J2YS50 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50J2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. U nit in mm 2 - ^ 5.4 ± 0.3 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One
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OCR Scan
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MG150J2YS50
G150J2YS50
G150J2YS50
MG150J2YS50
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PDF
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MG150J1BS11
Abstract: No abstract text available
Text: TOSHIBA MG150J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG150J1BS11 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf^l.O/^s Max. (Iç; = 150A) Low Saturation Voltage : (sat) -2.7V (Max.) (Iç; = 150A)
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OCR Scan
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MG150J1BS11
150J1B
2-33F1A
MG150J1BS11
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG150J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M fn u n 11 7 ^ n HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One Package.
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OCR Scan
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MG150J1ZS50
00A///s
50tis
100//S*
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PDF
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MG150J2YS50
Abstract: 150J2YS50
Text: TOSHIBA MG150J2YS50 T O SH IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG 150J2YS50 H IGH P O W E R S W IT C H IN G APPLIC ATIO N S. U nit in mm M O T O R C O N T R O L APPLIC ATIO N S. 2 - ^ 5 l< ± 0 .3 3-M5 The Electrodes are Isolated from Case.
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OCR Scan
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MG150J2YS50
150J2YS50
15//s
2-95A1A
G150J2YS50
MG150J2YS50
150J2YS50
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PDF
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Untitled
Abstract: No abstract text available
Text: MG150J1ZS50 U nit in mm HIGH P O W E R SW ITC H IN G APPLICA TIO N S. M O T O R C O N T R O L A PPLICA TIO N S. 2-FAST-ON-TAB »110 • • The Electrodes are Isolated from Case. High Input Impedance • Enhancement-M ode High Speed : tf= 0.30/iS Max. (Iç = 150A)
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OCR Scan
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MG150J1ZS50
30/iS
15//s
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG150J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 5 0 J 1 Z S 5 0 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. U nit in mm 2 -/6 .4 ± 0 .3 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One
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OCR Scan
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MG150J1ZS50
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PDF
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Untitled
Abstract: No abstract text available
Text: MG150J2YS50 H IGH P O W ER SW ITC H IN G APPLICA TIO N S. U n it in m m M O T O R C O N T R O L A PPLICATIO N S. • T h e E le c tro d e s a r e Is o la te d from C a se. • H ig h I n p u t Im p e d a n c e • In c lu d e s a C o m p lete H a l f B rid g e in O ne
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OCR Scan
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MG150J2YS50
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PDF
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TRANSISTOR BJ 003
Abstract: MG150J1JS50 60A4
Text: TOSHIBA MG150J1JS50 MG1 50J1JS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2 - 0 5 .4* 0.3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One
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OCR Scan
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MG150J1JS50
150J1JS50
VCEVQE--10V
TRANSISTOR BJ 003
MG150J1JS50
60A4
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PDF
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qc diode
Abstract: No abstract text available
Text: TOSHIBA MG150J7KS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 5QJ7KS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • The Electrodes are Isolated from Case. High Input Impedance 7 IGBTs Built into 1 Package. Enhancement-Mode
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OCR Scan
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MG150J7KS50
5QJ7KS50
--24H
qc diode
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG150J1BS11 TOSHIBA GTR MODULE m •v ■ SILICON N CHANNEL IGBT r; 1 ^ n 1 1 'w ■ v v ■ r nar <; 1 1 v ■ ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=1.0^s Max. (Iç = i50A) Low Saturation Voltage ; V q e (sat) = 2,7V (Max,) (Iq = 150A)
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OCR Scan
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MG150J1BS11
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PDF
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