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Toshiba America Electronic Components MG150Q1JS9
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MG150Q1JS9		23		1	1 $102 10 $94.146 100 $90.2292 1000 $90.2292 10000 $90.2292	Buy Now
Quest Components	MG150Q1JS9		18			1 $110.5 10 $102 100 $102 1000 $102 10000 $102	Buy Now
Toshiba America Electronic Components MG150Q2YS11 150 A, 1200 V, N-CHANNEL IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MG150Q2YS11		2			1 $375.4228 10 $375.4228 100 $375.4228 1000 $375.4228 10000 $375.4228	Buy Now
Toshiba America Electronic Components MG150Q2YS50 TRANSISTOR,IGBT POWER MODULE,3-PH BRIDGE,1.2KV V(BR)CES,200A I(C)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MG150Q2YS50		2			1 $97.5 10 $97.5 100 $97.5 1000 $97.5 10000 $97.5	Buy Now
Toshiba America Electronic Components MG150Q1JS65HA Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	MG150Q1JS65HA		180			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components MG150Q2YS51ACG Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	MG150Q2YS51ACG		23			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MG150Q Datasheets (29)

Part	Manufacturer	Description	Datasheet Type	PDF
MG150Q1JS40	Toshiba	TRANS IGBT MODULE N-CH 1200V 150A 5(2-109C3A)	Original	PDF
MG150Q1JS40	Toshiba	GTR Module Silicon N Channel IGBT	Scan	PDF
MG150Q1JS40	Toshiba	N CHANNEL IGBT (HIGH POWER SWITCHING, CHOPPER APPLICATIONS)	Scan	PDF
MG150Q2YK1	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MG150Q2YK1	Unknown	Power and Industrial Semiconductors Data Book	Scan	PDF
MG150Q2YK1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG150Q2YK1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG150Q2YK1	Westcode Semiconductors	NPN transistor for high power switching and notor control applications, 1200V, 150A	Scan	PDF
MG150Q2YL1	Unknown		Scan	PDF
MG150Q2YS1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG150Q2YS1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG150Q2YS11	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG150Q2YS40	Toshiba	Silicon N-channel IGBT GTR module for high power switching, motor control applications	Original	PDF
MG150Q2YS40	Toshiba	TRANS IGBT MODULE N-CH 1200V 150A 7(2-109C1A)	Scan	PDF

MG150Q2YS40	Toshiba	GTR Module Silicon N Channel IGBT	Scan	PDF
MG150Q2YS40	Toshiba	GTR Module Silicon N-Channel IGBT	Scan	PDF
MG150Q2YS50	Toshiba	N channel IGBT	Original	PDF
MG150Q2YS50	Toshiba	TRANS IGBT MODULE N-CH 1200V 200A 7(2-95A4A)	Original	PDF
MG150Q2YS50	Toshiba	GTR Module Silicon N Channel IGBT	Scan	PDF
MG150Q2YS50	Toshiba	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)	Scan	PDF

MG150Q Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MG150Q2YS40 Abstract: No abstract text available Text: MG150Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode	Original	MG150Q2YS40 2-109C1A MG150Q2YS40	PDF
Untitled Abstract: No abstract text available Text: MG150Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max)	Original	MG150Q2YS40 2-109C1A	PDF
TOSHIBA IGBT Abstract: MG150Q2YS65H PC890 Text: MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Applications Unit: mm • High input impedance • Enhancement-mode • The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2	Original	MG150Q2YS65H 2-95A4A 150transportation TOSHIBA IGBT MG150Q2YS65H PC890	PDF
IGBT MG150Q2YS50 Abstract: MG150Q2YS50 Text: MG150Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max)	Original	MG150Q2YS50 2-95A4A 30transportation IGBT MG150Q2YS50 MG150Q2YS50	PDF
MG150Q1JS44 Abstract: 1S1885 diode MG150Q1JS Text: MG150Q1JS44 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q1JS44 Unit in mm High Power Switching Applications Chopper Applications • High input impedance · High speed: tf = 0.4µs max. · Low saturation voltage · Enhancement−mode · The electrodes are isolated from case.	Original	MG150Q1JS44 2-109C1A MG150Q1JS44 1S1885 diode MG150Q1JS	PDF
MG150Q2YS51 Abstract: No abstract text available Text: MG150Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max)	Original	MG150Q2YS51 MG150Q2YS51	PDF
IGBT MG150Q2YS50 Abstract: Mg150q2ys50 Text: MG150Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode	Original	MG150Q2YS50 2-95A4A IGBT MG150Q2YS50 Mg150q2ys50	PDF
MG150Q2YS40 Abstract: No abstract text available Text: MG150Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode	Original	MG150Q2YS40 2-109C1A MG150Q2YS40	PDF
MG150Q2YS40 Abstract: CV200 Text: MG150Q2YS40 U nit in mm HIGH POW ER SW ITCHING APPLICATION S. « FAST on T»b# 110 M OTOR CO N TR O L APPLICATION S. • • • • • • High Input Impedance High Speed tf=0.5//s M ax. trr = 0.5/iS(Max.) Low Saturation Voltage : v CE(sat) = 4.0V (Max.)	OCR Scan	MG150Q2YS40 2-109C1A MG150Q2YS40 CV200	PDF
MG150Q2YK1 Abstract: No abstract text available Text: MG150Q2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.	OCR Scan	MG150Q2YK1 MG150Q2YK1	PDF
transistor jc 817 Abstract: MG150q2yk1 470G jc 817 Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150Q2YK1 TENTATIVE DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm fi-FAST-ON-TAB t 1 1 0 FEATURES: \ JAPAN » 3~M5 P_ 0 & 5 ÌIO .3 . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling	OCR Scan	MG150Q2YK1 109B1A 00A/jus transistor jc 817 MG150q2yk1 470G jc 817	PDF
MG150 Abstract: MG150Q2YS40 56i2 Text: TOSHIBA MG150Q2YS40 MG1 50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • Unit in mm 4-FAST-on-Tab# 110 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)	OCR Scan	MG150Q2YS40 02YS40 MG150 MG150Q2YS40 56i2	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A MG150Q2YS51 Mfii i ; n f » 9 v « i TOSHIBA GTR MODULE •« ■ SILICON N CHANNEL IGBT ■ agr ■ mm ht ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage	OCR Scan	MG150Q2YS51	PDF
DIODE JS.4 Abstract: No abstract text available Text: T O SH IB A MG150Q1JS40 TOSHIBA GTR MODULE m SILICON N CHANNEL IGBT <;i t r i m K d n HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .5 ^ s Max. trr = 0.5/iis (Max.) • Low Saturation Voltage • V c E (sa t) = 4*0V (Max.)	OCR Scan	MG150Q1JS40 DIODE JS.4	PDF

Untitled Abstract: No abstract text available Text: T O S H IB A MG150Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage	OCR Scan	MG150Q2YS50 50Q2YS50 TjS125Â	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A MG150Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 150Q1JS40 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf= 0.5/*s Max. trr=0.5,MS (Max.) • Low Saturation Voltage	OCR Scan	MG150Q1JS40 150Q1JS40	PDF
50Q2 Abstract: No abstract text available Text: TOSHIBA MG150Q2YS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G1 50Q2YS40 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A PP LIC A TIO N S . • • 4-FAST-on-Tab#110 High Input Impedance High Speed : tf = 0.5,ms Max.	OCR Scan	MG150Q2YS40 50Q2YS40 2-109C1A 50Q2	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA MG150Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)	OCR Scan	MG150Q2YS51 Temperat30000 TjS125	PDF
MG150Q1JS Abstract: No abstract text available Text: TOSHIBA MG150Q1JS40 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT MG1 5 0 Q 1 J S 4 0 HIGH PO W E R SW ITCHING APPLICATIONS. C HO PPER APPLICATIONS. • H igh In p u t Im pedance • H igh Speed : t f = 0 .5 /; s M ax. trr = 0.5/^s (Max.) • Low Satu ration V oltage	OCR Scan	MG150Q1JS40 MG150Q1JS	PDF
Untitled Abstract: No abstract text available Text: MG150Q1JS40 HIGH P O W E R SW ITC H IN G A PPLIC A TIO N S. U n it in m m C H O PPER A PPLIC A TIO N S. H igh In p u t Im pedance H igh Speed : tf= 0 .5 ,u s M ax. t rr = 0 .5 / î s (M ax.) Low S a tu ra tio n V oltage ; v C E (sa t) = 4 ° v (M ax.) E nhancem ent-M ode	OCR Scan	MG150Q1JS40 TjS125	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MG150Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)	OCR Scan	MG150Q2YS50 TjS125	PDF
150Q2YS51 Abstract: No abstract text available Text: TOSHIBA MG150Q2YS51 T O S H IB A G T R M O D U L E S IL IC O N N C H A N N E L IG B T M G 150Q2YS51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S M O T O R C O N T R O L A P P L IC A T IO N S High Input Impedance H ighspeed : tf=0.3^/s M ax. @Inductive Load	OCR Scan	MG150Q2YS51 150Q2YS51 150Q2YS51	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A MG150Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 150Q1JS40 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf= 0.5/*s Max. trr=0.5,MS (Max.) • Low Saturation Voltage	OCR Scan	MG150Q1JS40 150Q1JS40	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A MG150Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)	OCR Scan	MG150Q2YS51 50Q2YS51	PDF

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Toshiba America Electronic Components MG150Q1JS9

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MG150Q Datasheets (29)

MG150Q Datasheets Context Search

MG150Q2YS40

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TOSHIBA IGBT

IGBT MG150Q2YS50

MG150Q1JS44

MG150Q2YS51

IGBT MG150Q2YS50

MG150Q2YS40

MG150Q2YS40

MG150Q2YK1

transistor jc 817

MG150

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DIODE JS.4

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50Q2

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MG150Q1JS

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150Q2YS51

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