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    MG200J Price and Stock

    Powerex Power Semiconductors MG200J6ES61

    IGBT MOD 600V 200A 1000W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MG200J6ES61 Bulk 1
    • 1 $211.7
    • 10 $211.7
    • 100 $211.7
    • 1000 $211.7
    • 10000 $211.7
    		Buy Now

    Toshiba America Electronic Components MG200J2YS1

    GTR MODULE SILICON N CHANNEL IGBT Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MG200J2YS1 172
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    Toshiba America Electronic Components MG200J2YS40AC

    Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MG200J2YS40AC 3
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    MG200J Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG200J2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG200J2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG200J2YS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG200J2YS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG200J2YS2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG200J2YS50 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG200J2YS50 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG200J2YS50 Toshiba GTR Module Silicon N-Channel IGBT Scan PDF
    MG200J2YS50DS Toshiba Silicon N-Channel GTR Module Scan PDF
    MG200J6ES60 Toshiba Compact IGBT Modules & Compact IPM Original PDF
    MG200J6ES60 Toshiba Original PDF
    MG200J6ES61 Mitsubishi High Power Switching Applications Motor Control Applications Original PDF
    MG200J6ES61 Powerex Six IGBTMOD Compact IGBT Series Module 200 Amperes/600 Volts Original PDF

    MG200J Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MG200J6ES60 TOSHIBA GTR Module Silicon N Channel IGBT MG200J6ES60 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. • The electrodes are isolated from case. • Low thermal resistance


    Original     		MG200J6ES60 MG200J6ES60 00V/200A 2-123B1A PDF

    FC-20 equivalent

    Abstract: PC-1000 equivalent MG200J6ES61
    Text: MG200J6ES61 MITSUBISHI IGBT Module MG200J6ES61 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. • The electrodes are isolated from case. • Low thermal resistance


    Original     		MG200J6ES61 MG200J6ES61 00V/200A B25/85 FC-20 equivalent PC-1000 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: MG200J6ES60 TOSHIBA GTR Module Silicon N Channel IGBT MG200J6ES60 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. • The electrodes are isolated from case. • Low thermal resistance


    Original     		MG200J6ES60 00V/200A 2-123B1A PDF

    MG200J2YS50

    Abstract: 600V 200A igbt MOTOR SPEED CONTROL 2-95A1A
    Text: MG200J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG200J2YS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode


    Original     		MG200J2YS50 2-95A1A MG200J2YS50 600V 200A igbt MOTOR SPEED CONTROL 2-95A1A PDF

    1000 watts ups circuit diagram with detail

    Abstract: MG200J6ES61
    Text: MG200J6ES61 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six IGBTMOD Compact IGBT Series Module 200 Amperes/600 Volts A D L J K H M U G N P DETAIL "A" C B U V F E W H Q N Q T S R P R V P W X CN-1 CN-2 P CN-1:7 CN-1:6


    Original     		MG200J6ES61 Amperes/600 1000 watts ups circuit diagram with detail MG200J6ES61 PDF

    MG200J2YS50

    Abstract: No abstract text available
    Text: MG200J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG200J2YS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode


    Original     		MG200J2YS50 2-95A1A MG200J2YS50 PDF

    MG200J2YS50

    Abstract: No abstract text available
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG200J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 0.30µs Max. (IC = 200A)


    Original     		MG200J2YS50 MG200J2YS50 PDF

    Untitled

    Abstract: No abstract text available
    Text: MG200J6ES60 TOSHIBA IGBT Module Silicon N Channel IGBT MG200J6ES60 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. • The electrodes are isolated from case. • Low thermal resistance


    Original     		MG200J6ES60 MG200J6ES60 00V/200A PDF

    set igbt on off Vge

    Abstract: MG200J6ES60 "TOSHIBA IGBT module"
    Text: MG200J6ES60 TOSHIBA IGBT Module Silicon N Channel IGBT MG200J6ES60 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. • The electrodes are isolated from case. • Low thermal resistance


    Original     		MG200J6ES60 MG200J6ES60 00V/200A 2-123B1A set igbt on off Vge "TOSHIBA IGBT module" PDF

    Untitled

    Abstract: No abstract text available
    Text: MG200J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG200J2YS50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode


    Original     		MG200J2YS50 2-95A1A PDF

    MG200J6ES60

    Abstract: TOSHIBA IGBT DATA BOOK
    Text: MG200J6ES60 TOSHIBA GTR Module Silicon N Channel IGBT MG200J6ES60 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. · The electrodes are isolated from case. · Low thermal resistance


    Original     		MG200J6ES60 MG200J6ES60 00V/200A 2-123B1A TOSHIBA IGBT DATA BOOK PDF

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302 PDF

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 PDF

    MG200J2YS50

    Abstract: No abstract text available
    Text: TOSHIBA MG200J2YS50 MG200J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2 - ^ 5.4± 0.3 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		MG200J2YS50 200J2 2-95A1A MG200J2YS50 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG200J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200J2YS50 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2-#S.4±0.3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		MG200J2YS50 2-95A1A 50jus* 100/2S* PDF

    MG200J2YS1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL IGBT MG200J2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=0.35m s Max. trr=0. 25jJs(tlax.) . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in One


    OCR Scan     		MG200J2YS1 25jJs MG200J2YS1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MG200J2YS50 Unit in mm HIGH P O W ER SW IT C H IN G A PPLICA TIO N S. M O T O R C O N T R O L A PPLIC A TIO N S. • • • • • • j The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode


    OCR Scan     		MG200J2YS50 30//s 15//s 2-95A1A PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG200J2YS50 MG200J2YS50 TOSHIBA GTR MODULE SILICON IM CHANNEL IGBT U nit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		MG200J2YS50 2-95A1A PDF

    MG200J2YS50

    Abstract: No abstract text available
    Text: T O SH IB A MG200J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200J2YS50 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2-#S.4±0.3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		MG200J2YS50 2-95A1A MG200J2YS50 PDF

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9 PDF

    MG15J6ES40

    Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
    Text: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40


    OCR Scan     		MG15J6ES40 MG2SJ6KS40 MG50J2YS50 MG50J6KS50 MG75J2YS50 MG75J6KS50 100J2YS50 MG100J6KS50 MG150J2YS50 MG200J2YS50 MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4 PDF

    MG40001US41

    Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
    Text: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50


    OCR Scan     		MG400J1US51 MG800J1US51 MG300J1US51 MG40J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG400J2VS50 MG2SJ6ES40 MG40001US41 MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50 PDF

    MG200J2YS50

    Abstract: 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG200Q1US41 MG300Q1US41 MG300Q1US51 MG400J2YS50 mg200q2ys50
    Text: MHTEPTEKC www.i-t.su [email protected] Ten: 495 739-09-95, 644-41-29 M o A y n u IG B T $ u p M b i T o s h i b a fln a n a 3 0 H p a 6 o H nxT eM ne paT yp np0M3B0AMTenb Kofl: Uce lc Icm :o t -4 0 °C a o + 1 2 5 °C : T o s h ib a Ucesat npH lc Tr(typ.j Tf(typ.)


    OCR Scan     		flnana30H ot-40Â MG200Q1US41 2-109A4A MG300Q1US41 MG300Q1US51 2-109F1A MG400Q1US41 MG200J2YS50 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG400J2YS50 mg200q2ys50 PDF

    IGBT 200A 1200V

    Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D


    OCR Scan     		bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40 PDF