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    MG50Q6ES51A Datasheets (2)

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    MG50Q6ES51A Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG50Q6ES51A Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF

    MG50Q6ES51A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG50Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		MG50Q6ES51A PDF

    ksh 200 TRANSISTOR equivalent

    Abstract: MG50Q6ES51 MG50Q6ES51A KSH 200 TRANSISTOR
    Text: TOSHIBA MG50Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 5 0 Q 6 ES51 A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		MG50Q6ES51A MG50Q6ES51 2-108E2A 961001EAA1 ksh 200 TRANSISTOR equivalent MG50Q6ES51A KSH 200 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50Q6ES51A TOSHIBA GTR MODULE •WB ^M i MF «F SILICON N CHANNEL IGBT ta MF MF ■ » ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.


    OCR Scan     		MG50Q6ES51A 961001EAA1 PDF