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MG600Q1US5 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MG600Q1US51		Toshiba	GTR Module Silicon N Channel IGBT		Original	PDF
MG600Q1US59A		Mitsubishi	HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS		Original	PDF

MG600Q1US5 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mg600q1us51 Abstract: No abstract text available Text: MG600Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG600Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max)	Original	MG600Q1US51 2-109F3A mg600q1us51	PDF
Toshiba bridge diode Abstract: MG600Q1US51 Text: MG600Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG600Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (max) Enhancement-mode	Original	MG600Q1US51 2-109F3A Toshiba bridge diode MG600Q1US51	PDF
MG600Q1US51 Abstract: No abstract text available Text: MG600Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG600Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode	Original	MG600Q1US51 2-109F3A MG600Q1US51	PDF
102 TRANSISTOR Abstract: MG600Q1US59A mitsubishi IGBT Modules MG600Q1US59 E80276 IGBT 600V 600A Text: MITSUBISHI IGBT MODULES MG600Q1US59A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MG600Q1US59A FEATURE ¡The electrodes are isolated from case. ¡Enhancement-mode ¡Integrates fault-signal output circuit in package. Short-Circuit and Over-Current	Original	MG600Q1US59A E80276 E80271 102 TRANSISTOR MG600Q1US59A mitsubishi IGBT Modules MG600Q1US59 E80276 IGBT 600V 600A	PDF
GT30J322 Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬	Original	MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X	PDF
2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn	PDF
tlp421 equivalent Abstract: igbt protection circuit diagram MQ400V1US51A igbt controller IPM module MG400Q2YS60A 110C mg600Q1US59 MG300Q2YS60A MG400V2YS60A Text: NEW COMPACT IGBT MODULES WITH INTEGRATED CURRENT AND TEMPERATURE SENSORS By Eric R. Motto, John F. Donlon Application Engineering Powerex Incorporated Abstract – A new family of compact IGBT modules has been developed to bridge the gap between fully integrated IPM devices and basic IGBT modules. The idea of this new family was	Original		PDF
MG600Q1US51 Abstract: 10EFF Text: TOSHIBA MG600Q1US51 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 6 0 0 Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage	OCR Scan	MG600Q1US51 2-109F3A Volta00500 10//s MG600Q1US51 10EFF	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A M G 6 00 Q 1U S5 1 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 6 0 0 Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf= 0.3,ms Max. @Induetive Load Low Saturation Voltage	OCR Scan	MG600Q1US51	PDF