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    Mitsubishi Electric MGF1403

    TRANSISTOR,MESFET,N-CHAN,20MA I(DSS),MICRO-X
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    Quest Components MGF1403 5
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    ComSIT USA MGF1403 15
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    Mitsubishi Electric MGF1412

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    ComSIT USA MGF1412 128
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    Mitsubishi Electric MGF1405

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    ComSIT USA MGF1405 6
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    MGF14 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGF1402 Unknown FET Data Book Scan PDF
    MGF1402B Mitsubishi FET Transistor, LOW NOISE GaAs FET Scan PDF
    MGF1402B Mitsumi MGF1402B Scan PDF
    MGF1403 Unknown FET Data Book Scan PDF
    MGF1403B Mitsubishi LOW NOISE GaAs FET Original PDF
    MGF1403B Mitsubishi Low Noise GaAs FET Scan PDF
    MGF1403B Mitsubishi Low Noise GaAs FET Scan PDF
    MGF1404 Unknown FET Data Book Scan PDF
    MGF1405 Unknown FET Data Book Scan PDF
    MGF1412 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGF1412 Unknown FET Data Book Scan PDF
    MGF1413 Unknown FET Data Book Scan PDF
    MGF1414 Unknown FET Data Book Scan PDF
    MGF1423 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGF1423 Unknown FET Data Book Scan PDF
    MGF1423B Mitsubishi Small Signal GaAs FET Scan PDF
    MGF1425 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGF1425 Unknown FET Data Book Scan PDF
    MGF1451A Mitsubishi Low Noise MES FET Original PDF

    MGF14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGF1402B

    Abstract: MGF1402
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET MITSUBISHI ELECTRIC


    Original     		PDF MGF1402B MGF1402B MGF1402

    MGF1404

    Abstract: No abstract text available
    Text: MGF1404-61-16 Transistors P-Channel UHF/Microwave MOSFET V BR DSS (V) V(BR)GSS (V)-6 I(D) Max. (A)80m P(D) Max. (W)200m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.20m


    Original     		PDF MGF1404-61-16 MGF1404

    MGF1451A

    Abstract: No abstract text available
    Text: Dec./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1451A Low Noise MES FET DESCRIPTION Outline Drawing The MGF1451A is designed for use in S to Ku band power amplifiers. FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION S to Ku band power Amplifiers


    Original     		PDF MGF1451A MGF1451A 13dBm 12GHz Decl/2006

    MGF1403B

    Abstract: GaAs FET
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET MITSUBISHI ELECTRIC


    Original     		PDF MGF1403B MGF1403B GaAs FET

    ku Band Power GaAs FET

    Abstract: No abstract text available
    Text: Dec./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1451A Microwave Power GaAs FET DESCRIPTION Outline Drawing The MGF1451A is designed for use in S to Ku band power amplifiers. FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION


    Original     		PDF MGF1451A MGF1451A 13dBm 12GHz Decl/2006 ku Band Power GaAs FET

    gaas fet micro-X Package marking

    Abstract: gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X
    Text: < Power GaAs FET > MGF1451A Micro-X ceramic package DESCRIPTION The MGF1451A power GaAs MES FETis designed for use in S to Ku band amplifiers. Outline Drawing FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION Fig.1 S to Ku band low noise amplifiers


    Original     		PDF MGF1451A MGF1451A 13dBm 12GHz gaas fet micro-X Package marking gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 0 3 B low -rtoise GaAs FET w ith an N-channel S ch o ttky gate is designed fo r use in S to Ku band am pli­ fiers. The herm etically sealed m etal-ceram ic package as­


    OCR Scan     		PDF MGF1403B MGF1403B Ta-251S 12GHz

    0619

    Abstract: g720
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1423B SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -ch an nel S cho ttky gate, is designed fo r use in S to Ku band am p li­ U n it m i l l i m e t e r s i .r ic h e s t


    OCR Scan     		PDF MGF1423B 157MIN 12GHz 10rcA 0619 g720

    MGF1502

    Abstract: MGF1412 MGF1601 mgf2116 MGF1802 MGF2124 MGF1404 MGF1405 MGF1902 MGF1501
    Text: - 152 - m. MGF14Q3 MGF1404 MGF1405 MGF1412 MGF1413 MGF1414 MGF1423 MGF1425 MGF1501 MGF1502 MGF1601 MGF1801 MGF1802 MGF1902 MGFÎ903 MGF1904 MGF2116 MGF2117 MGF2124 MGF2124F MGF2124G MGF2148 MGF2148F MGF2148G MGF2172 MGF2205 MGF2407 MGF2407A MGF2415 MGF2415A


    OCR Scan     		PDF MGF1403 MGF1404 MGF1405 MGF1412 MGF1413 12GHz MGF2117 35MHz MGF2124 MGF1502 MGF1601 mgf2116 MGF1802 MGF2124 MGF1902 MGF1501

    MGF1412

    Abstract: MGF1412-11-09 MGFC1412 79S12
    Text: ^M ITSUBISHI Die_ MGFC1412 Package MGF1412 ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES The MGFC1412 and MGF1412 are low noise GaAs FETs with a N-channel Schottky gare and are designed for use in low noise amplifiers. The MGF1412 features a hermetically sealed


    OCR Scan     		PDF MGFC1412 MGF1412 MGF1412 200jim MGFC1412-T01 MGF1412-11-09 79S12

    MGF1423B

    Abstract: fet sm 367 KU 612 614 104 133 21 D094 MGF1423
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1423B SMALL SIGNAL GaAs FET DESCRIPTION T he M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -chann el S ch o ttky gate, is designed fo r use in S to Ku band am pli­ fiers. FEATURES • High linear power gain • High o utp ut power at 1 dB gain compression


    OCR Scan     		PDF MGF1423B MGF1423B, 13dBm 157MIN. 12GHz MGF1423B fet sm 367 KU 612 614 104 133 21 D094 MGF1423

    MGF1403

    Abstract: 2SK276
    Text: MITSUBISHI {DISCRETE S O TL T|,E4‘ÌAEe] 001G043 S T ~ m MITSUBISHI SEMICONDUCTOR <GaAs FET> _ ; 6249829 MITSUBISHI MGF1403 2SK276 ( D I S C R E T E SC) 91D 10043 D T-BM5 FOR M IC R O W A VE LO W -NO ISE A M P L IF IE R S N-CHANNEL SCHOTTKY BARR IER GATE T Y P E


    OCR Scan     		PDF 001G043 MGF1403 2SK276) MGF1403 2SK276

    MGF1425

    Abstract: No abstract text available
    Text: MITSUBISHI {DISCRETE SC> TÏ 0^1^54^,32^ 00100L0 B 1~ MITSUBISHI SEMICONDUCTOR <GaAs FET> 6 249 82 9 MITSUBISHI DISCRETE SC I : MGF1425 91 D 10060 DT-31&#39;35 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION The M G F1425


    OCR Scan     		PDF 00100L0 MGF1425 DT-31 F1425 MGF1425

    MGF1425

    Abstract: MGFC1423 MGF1425-61-16 MGF1423 MGFC1425 mitsubishi application mg series gaas MGF-C MGF1923-01
    Text: A m it s u b is h i ELECTRONIC DEVICE GROUP DESCRIPTION The MGF1423/1425 series devices are low noise GaAs FETs wtih N-channel schottky gates. These devices are suitable for a wide range of amplifier and oscillator applications in S to Ku-band. In die form, the devices are


    OCR Scan     		PDF MGF1423/1425 MGF1323 MGF1923 MGFC1423, MGFC1425 MGF1323, MGF1423, MGF1425, MGF1923 MGF1425 MGFC1423 MGF1425-61-16 MGF1423 mitsubishi application mg series gaas MGF-C MGF1923-01

    fet K 793

    Abstract: MGF1402 cdb 838 S22VS MGF1402B Q017 91 569 775 -35 S 30ria
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> • b24tlfl2ti 0017040 b47 ■ MGF1402B LOW NOISE GaAs FET DESCRIPTION OU TLINE DRAWING The MGF1402B low-noise GaAs FET w ith an N-channel Schottky gate is designed fo r use in S to X band ampli­ fiers and oscillators. The hermetically sealed metalceramic


    OCR Scan     		PDF b241fl2tà MGF1402B 12GHz MGF1402B 157MIN. fet K 793 MGF1402 cdb 838 S22VS Q017 91 569 775 -35 S 30ria

    mgf1903b

    Abstract: MGF1403B MGF1402
    Text: LOW NOISE GaAs FET M G F Ix x x x Series Typical Characteristics Type Froq. GHe NFmin. (dB| M V 11M MOF1302 MSF1303B M8F1323 MGF1402B MGF1412B MGF1403B MQF1423B MBF142SB MGF19028 MGF1903B MOF1923 4 4 12 12 12 12 12 12 12 12 12 12 1.4 1.2 1.8 101*1) <*1): P i dB(dBm)


    OCR Scan     		PDF MOF1302 MSF1303B M8F1323 MGF1402B MGF1412B MGF1403B MQF1423B MBF142SB MGF19028 MGF1903B MGF1402

    MGF1402

    Abstract: 2SK274 MGF1402 -01
    Text: MITSUBISHI {DISCRETE SC> TI DE IbaMTflET 0010033 2 MITSUBISHI SEMICONDUCTOR <GaAs FET> 6 249 82 9 MITSUBISHI MGF1402 2SK274 (DISCRETE SC) D T -a -zs 9 1 D 10033 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTIONS The M G F1402


    OCR Scan     		PDF MGF1402 2SK274) F1402 MGF1402 2SK274 MGF1402 -01

    0g18

    Abstract: 0G66
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET D E S C R IP T IO N The M G F 1 4 0 3 B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to Ku band am pli­ fiers. The hermetically sealed metal-ceram ic package as­


    OCR Scan     		PDF MGF1403B MGF1403B F1403B 12GHz 0g18 0G66

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 0 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to X band ampli­ fiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and has a


    OCR Scan     		PDF MGF1402B 12GHz

    mgf*1412

    Abstract: MGF1412 MGF1412B
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1412B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 1 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use is S to X band ampli­ fiers. The hermetically sealed metal-ceramic package as­ sures minimum parasitic losses, and has a configuration


    OCR Scan     		PDF MGF1412B MGF1412B 12GHz mgf*1412 MGF1412

    cha 0438

    Abstract: No abstract text available
    Text: ! MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET D E S C R IP T IO N The M G F 1 4 0 2 B low-rtoise GaAs FET w ith an N -ch an nel S ch o ttk y g ate is designed fo r use in S to X band am pli­ fiers and oscillators. Th e herm etically sealed m etalceram ic


    OCR Scan     		PDF MGF1402B MGF1402B cha 0438

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEM'ìfiS'ì □□176SC 1 713 MGF1425B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 2 5 B low -noise GaAs FET w ith an N -channel S chottky gate is designed fo r use in Ku band amplifiers. FEATURES • Low noise figure N F mln = 1.4 T Y P . @ f = 12 G H z


    OCR Scan     		PDF 176SC MGF1425B

    MGF1403B

    Abstract: GSO 69 fet K 727
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET D E SC R IP T IO N T h e M G F 1 4 0 3 B lo w -n o is e G aAs FET w ith an N -c h a n n e l S c h o ttk y g ate is designed fo r use in S to Ku ban d a m p li­ fiers. T h e h erm etically sealed m e ta l-c e ra m ic p ac k a g e as­


    OCR Scan     		PDF MGF1403B MGF1403B 157MIN. 12GHz GSO 69 fet K 727

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1425B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 2 5 B low -noise GaAs FET w ith an N -channel O U TLIN E DRAW ING Unit: m illim eters inches 4 M ÍN . (0 .1 5 7 M IN . ) 4 M IN . ( 0 .1 5 7 M IN .) S cho ttky gate is designed fo r use in Ku band am plifiers.


    OCR Scan     		PDF MGF1425B MGF1425B GF1425B 12GHz