MGF2312 Search Results

DC bias of gaas FET

Abstract: transistor GaAs FET s parameters
Text: MITSUBISHI {DISCRETE SC> TÏ » F | b S 4 ciflST □D1D113 □ MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2312 6 2 4 9 8 2 9 MITSUBI SH I DISCRETE SC 9 1D 10113 0 7 :3 1'£>5 FOR MICROW AVE PO W ER AM PLIFIERS D E S C R IP T IO N The MGF2312 is designed for power amplifiers and oscilla­