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Mitsubishi Electric MGF4317D Electronic Component
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MGF43 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF
MGF4301A	Unknown	FET Data Book	Scan	PDF
MGF4302A	Unknown	FET Data Book	Scan	PDF
MGF4303A	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
MGF4303A	Unknown	FET Data Book	Scan	PDF
MGF4304A	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
MGF4304A	Unknown	FET Data Book	Scan	PDF
MGF4305A	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
MGF4305A	Unknown	FET Data Book	Scan	PDF
MGF4316	Mitsubishi	Super Low Noise InGaAs HEMT	Original	PDF
MGF4316G	Mitsubishi	Super Low Noise InGaAs HEMT	Original	PDF
MGF4319	Mitsubishi	Super Low Noise InGaAs HEMT	Original	PDF
MGF4319G	Mitsubishi	Super Low Noise InGaAs HEMT	Original	PDF
MGF431XG	Mitsubishi	Super Low Noise InGaAs HEMT	Original	PDF
MGF431xG Series	Mitsubishi	Super Low Noise InGaAs HEMT	Original	PDF

MGF43 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MGF1802 Abstract: mgf431 MGF43180 mitsubishi mgf MGF1902B-65 Text: MGF431OD Series L1~o- o~i -oqof- SUPER LOW NOISE InOaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF431OD series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a	Original	MGF431OD 12GHz MGF4314D: MGF4316D: MGF4317D: MGF4318D: 12GHz MGF4S17D-O1 MGF43I4E45. MGF1802 mgf431 MGF43180 mitsubishi mgf MGF1902B-65	PDF
gD 679 transistor Abstract: MGF4316G MGF4319G InGaAs HEMT mitsubishi mgf431 MGF4319 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF431xG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT High Electron Mobility Transistor is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures	Original	MGF431xG MGF431xG 12GHz MGF4316G MGF4319G Par79 MGF4316G gD 679 transistor MGF4319G InGaAs HEMT mitsubishi mgf431 MGF4319	PDF
Untitled Abstract: No abstract text available Text: MGF4316D Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-4.0 I(D) Max. (A)60m P(D) Max. (W)50m Maximum Operating Temp (øC)125 I(DSS) Min. (A)10m I(DSS) Max. (A)60m @V(DS) (V) (Test Condition)2.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.40m	Original	MGF4316D	PDF
MGF4919G Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60 Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии	Original	SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60	PDF
FHC30LG Abstract: ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358 Text: RF TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857 MMBR911	Original	MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 FHC30LG ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776	PDF
FN1016 Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016 Text: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773	Original	2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 2N2222A 2N2369 2N2369A FN1016 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016	PDF
BUZ90af Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198	Original	O-251AA O-247AC O-220AB PowerSO-20 BUZ90af hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l	PDF
MGF4918D Abstract: MGF4314D MGF4919F MGF4318D MGF4316D MGF4919 MGF4319F MGF4317D MGF-4317D MGF4914D Text: LOW NOISE InGaAs HEMT M G F 4 x x x x Series T y p ic a l C h aracteristics Type MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E MGF4318E MGF4316F MGF4319F MGF4416D MGF4417D MGF4418D MGF4511D MGF4714AP MGF4914D MGF4916D MGF4917D MGF4918D MGF4914E MGF4918E MGF4916F	OCR Scan	GD-16 GD-15 GD-18 MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E12 MGF4918D MGF4919F MGF4919 MGF4319F MGF-4317D MGF4914D	PDF
MGF4404A Abstract: MGF4302A MGF2430 MGF4304A MGF4403A 12GHz MGF4301A MGF4402A MGF4401A MGFK25M4045 Text: - 154 - m f m « € m & m it V K V tè 5e X % I* V* E ft * (V) * * P d /P c h r} # (A) (W) GaAs N D -15 GDO -15 0 900m D MW PA GaAs N D -15 GDO -15 0 900m D 5 MGF2445 MW PA GaAs N D -15 GDO -15 0 1.4 D 10 MGF4301A MW LN A GaAs N D -4 GDO -4 0 60m D	OCR Scan	MGF2430 MGF2430A MGF2445 MGF4301A MGF4302A MGF4303A MGF4304A MGFC36V6471 MGFC36V7177 MGFC36V7785 MGF4404A MGF4403A 12GHz MGF4402A MGF4401A MGFK25M4045	PDF
MGF4310 Abstract: MGF4910 MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318 Text: Die_MGFC4410 SERIES Package MGF4310 SERIES MGF4910 SERIES a ^MITSUBISHI ELECTRONIC DEVICE GROUP D Series - 0.25um X 200um DESCRIPTION “T“ GATE STRUCTURE The super low noise HEMT device family is designed for applications requiring high performance acheiving ultra low noise figures.	OCR Scan	MGFC4410 MGF4310 MGF4910 200um 8E-30 MGF4914E-01 MGF4918E-01 12GHz, MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318	PDF
MGF4317D Abstract: MGF-4317D MGF4310 MGF4316D MGF4318D 4310D Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	F4310D MGF4310D 12GHz GF4314D: GF4316D: F4317D: GF4318D: 12GHz 4310D MGF4317D MGF-4317D MGF4310 MGF4316D MGF4318D	PDF
n channel fet k 1118 Abstract: MGF4316G MGF4319G gD 679 transistor MGF4316 low noise hemt transistor LD 5161 st 3617 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF431XG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT High Electron Mobility Transistor is designed for use in L to K band amplifiers The herm etically sealed m etal-ceramic package assures	OCR Scan	MGF431xG MGF431xG 12GHz MGF4316G MGF4319G MGF4316G n channel fet k 1118 MGF4319G gD 679 transistor MGF4316 low noise hemt transistor LD 5161 st 3617	PDF
n channel fet k 1118 Abstract: GS 069 MGF4319G mgf4316g Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF431xG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT High Electron Mobility Transisfor is designed for use in L to K band amplifiers. The herm etically sealed metal-ceramic package assures	OCR Scan	MGF431xG MGF431xG MGF4316G MGF4319G MGF4316G MGF4319G n channel fet k 1118 GS 069	PDF

MGF4310 Abstract: MGF4314D MGF4318D MGF4310D MGF4316D MGF4317D M5M27C102P MGF4317 MGF4318 MGF431 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	MGF4310D 12GHz MGF4314D: MGF4316D. MGF4317D: MGF4318D: M5M27C102P RV-15 MGF4310 MGF4314D MGF4318D MGF4316D MGF4317D MGF4317 MGF4318 MGF431	PDF
f4316 Abstract: F4319F MGF4319F Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series ! S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0F series super-low -noise HEMT High Electron M o b ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic	OCR Scan	F4310F F4316F F4319F f4316 F4319F MGF4319F	PDF
MGF4313 Abstract: MGF4919 Text: LOW NOISE InGaAs H EM T M G F4xxxx Series Freq. GHz NFmin. (dB) 12 0 .8 0 0 .5 5 11.5 GG Palette 12 11.5 Palette 12 0 .4 5 11.5 GG GG 12 0 .7 5 0 .6 5 11.5 IG Palette 12 11.5 IG Palette I T yp ical C haracteristics 12 0 .5 5 11.5 IG MGF4714AP NH3F4814E MGF4918E	OCR Scan	M6f4314£ MGF4313E MQF43t9iE MOF441 MGF44I7D MGF4714AP NH3F4814E MGF4918E MGF4919E MGF4313 MGF4919	PDF
MGF1200 Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.	OCR Scan	MGF1102 MGF1302 MGF1303B MGFI323 MGF1402B MGFI412B MGF1403B MGF1423B MGFI425B MGFI902B MGF1200 MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF4305A	PDF
MGF4919G Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10	OCR Scan	MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A	PDF
M52777SP Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30	OCR Scan	2SA1115 2SA1235 2SA1235A 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 M52777SP M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p	PDF
EM 257 Abstract: No abstract text available Text: a A s - » iS Ä * Ê fê B *M G F 1 9 0 2 EK S Ä : SHF %mo íü fjs ' N -V iV i/ •■/h + ' s U 7 "ir— H GaAs FET. #ä : g»o ä « 4 o F19 03 : SHF S i a : N f + i J l / i ^ a -y 1- GaAs FET. m : « í g » o iä fflfo • MG F 4 3 0 1 A W É : SHF ^ I g M ^ ü f S f f io	OCR Scan	12GHz EM 257	PDF
MGF4310 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F 4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to Unit: millimeters (inches) 4 M iN .	OCR Scan	4310E F4319E MGF4310E MGF4314E MGF4318E GF4319E MGF4310	PDF
F4310E Abstract: F4314E mitsubishi application mg series gaas Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F4310E series su per-lo w -n oise HEMT High Electron M o bility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic	OCR Scan	F4310E 4310E F4314E MGF4318E mitsubishi application mg series gaas	PDF
MGF4310 Abstract: 6020M f491 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910F Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION The M GF4910F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	F4910F GF4910F MGF4310F 12GHz GF4919F: GF4916F: 12GHz 27C102P, RV-15 MGF4310 6020M f491	PDF

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Mitsubishi Electric MGF4317D

MGF43 Datasheets (14)

MGF43 Datasheets Context Search

MGF1802

gD 679 transistor

Untitled

MGF4919G

FHC30LG

C42V5964

FN1016

BUZ90af

MGF4918D

MGF4404A

MGF4310

MGF4317D

n channel fet k 1118

n channel fet k 1118

MGF4310

f4316

MGF4313

MGF1200

MGF4919G

M52777SP

EM 257

MGF4310

F4310E

MGF4310