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    MGF1802

    Abstract: mgf431 MGF43180 mitsubishi mgf MGF1902B-65
    Text: MGF431OD Series L1~o- o~i -oqof- SUPER LOW NOISE InOaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF431OD series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a


    Original     		MGF431OD 12GHz MGF4314D: MGF4316D: MGF4317D: MGF4318D: 12GHz MGF4S17D-O1 MGF43I4E45. MGF1802 mgf431 MGF43180 mitsubishi mgf MGF1902B-65 PDF

    MGF7006

    Abstract: M5M27C102P microwave IC mgf700
    Text: MITSUBISHI SEMICONDUCTOR <GaAs M M IO MGF7006 UHF BAND GaAs MONOLITHIC MICROWAVE IC DESCRIPTION OUTLINE DRAWING The M G F 7 0 0 6 is a m onolithic m icrow ave integrated circuit U n ît: m illim e te rs inches fo r use in U H F -b an d low noise am plifier.


    OCR Scan     		MGF7006 MGF7006 27C102P, RV-15 M5M27C102P microwave IC mgf700 PDF