Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MGFC36V5258 Search Results

    SF Impression Pixel

    MGFC36V5258 Price and Stock

    Mitsubishi Electric MGFC36V525801

    5.2-5.8 GHZ BAND 4W INTERNALLY MATCHED GAAS FET RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MGFC36V525801 15
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Mitsubishi Electric MGFC36V525851

    RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MGFC36V525851 4
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    MGFC36V5258 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC36V5258 Mitsubishi 5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC36V5258 Mitsubishi 5.2-5.8 GHz BAND 4W Internally Matched GaAs FET Scan PDF
    MGFC36V5258 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFC36V5258 Unknown FET Data Book Scan PDF

    MGFC36V5258 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V5258 5.2 – 5.8 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V5258 MGFC36V5258

    Mitsubishi

    Abstract: MGFC36V5258 mitsubishi electric 5.8GHz
    Text: MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V5258 5.2 ~ 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004


    Original     		PDF June/2004 MGFC36V5258 Mitsubishi MGFC36V5258 mitsubishi electric 5.8GHz

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V5258 5.2 – 5.8 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V5258 MGFC36V5258

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


    Original     		PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC36V5258 5 .2 ~ 5 .8 G H z BAND 4W INTERNALLY M ATCHED GaAs F E T DESCRIPTION The MGFC36V5258 is an internally impedance-matched GaAs power FET especially designed fo r use in 5.2 ~ 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF GFC36V5258 MGFC36V5258

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V5258 5.2—5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 36V 5 25 8 is an in te rna lly impedance-matched GaAs pow er F E T especially designed fo r use in 5.2 ~ 5.8 GHz band am plifiers. The herm etically sealed m etal-ceramic


    OCR Scan     		PDF MGFC36V5258

    3642G

    Abstract: No abstract text available
    Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m


    OCR Scan     		PDF

    MGF2430A

    Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E


    OCR Scan     		PDF 12GHz MGF4919E MGF4914E MGF49T4D MGF4714AP MGF4914D MGF1923 MGF1902B MGF2430A MGF4919 MGF1402B MGF2430 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445

    MGF4404A

    Abstract: MGF4302A MGF2430 MGF4304A MGF4403A 12GHz MGF4301A MGF4402A MGF4401A MGFK25M4045
    Text: - 154 - m f m « € m & m it V K V tè 5e X % I* V* E ft * (V) * * P d /P c h r} # (A) (W) GaAs N D -15 GDO -15 0 900m D MW PA GaAs N D -15 GDO -15 0 900m D 5 MGF2445 MW PA GaAs N D -15 GDO -15 0 1.4 D 10 MGF4301A MW LN A GaAs N D -4 GDO -4 0 60m D


    OCR Scan     		PDF MGF2430 MGF2430A MGF2445 MGF4301A MGF4302A MGF4303A MGF4304A MGFC36V6471 MGFC36V7177 MGFC36V7785 MGF4404A MGF4403A 12GHz MGF4402A MGF4401A MGFK25M4045

    MGFC36V6471

    Abstract: MGFC36V5964 MGFC36V4450
    Text: A m it s u b is h i MGFC36VXXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The MGFC36VXXXX products are internally impedance matched devices for use in C-band power amplifier applications. • Class A operation • Internally matched to 50£2 • High output power


    OCR Scan     		PDF MGFC36VXXXX MGFC36VXXXX MGFC36V5258-01 MGFC36V5258-51 MGFC36V5964-01 MGFC36V5964-51 MGFC36V6471-01 MGFC36V6471-51 MGFC36V7177-01 MGFC36V7177-51 MGFC36V6471 MGFC36V5964 MGFC36V4450