Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC40V5258 5.2 - 5.8 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC40V5258
MGFC40V5258
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5.8 ghz amplifier 10w
Abstract: Gaas Power Amplifier 10W
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8
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MGFC40V5258
MGFC40V5258
25deg
June/2004
5.8 ghz amplifier 10w
Gaas Power Amplifier 10W
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5.8 ghz amplifier 10w
Abstract: MGFC40V5258
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8
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MGFC40V5258
MGFC40V5258
June/2004
5.8 ghz amplifier 10w
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5.8GHz
Abstract: 5.8 ghz amplifier 10w MGFC40V5258
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8
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MGFC40V5258
MGFC40V5258
25deg
5.8GHz
5.8 ghz amplifier 10w
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC40V5258 5.2 - 5.8 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC40V5258
MGFC40V5258
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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MGFS45H2201G
Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety
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H-CR587-J
KI-0612
MGFS45H2201G
MGFS40H2201G
MGF0909A
sirio
mgfc36v-a
QVC12
MGF1907A
MGF4961
mgf4941al
mitsubishi mgf
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Untitled
Abstract: No abstract text available
Text: ^24^02^ 0 Q 1 7 lì 7 b MITSUBISHI SEMICONDUCTOR <GaAs FET> 7Ô3 MGFC40V5258 5.2 ~ 5 .8 G H z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 5 2 5 8 is an internally im p edan ce-m atch ed G aA s power F E T especially designed for use in 5 . 2 - 5 . 8
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MGFC40V5258
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MGFC40V5258
Abstract: 5.8 ghz amplifier 10w 5.8GHz
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2—5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET D ESCRIPTIO N The M G F C 4 0 V 5 2 5 8 is an in te rna lly impedance-matched GaAs power FET especially designed fo r use in 5 .2 — 5 .8 GHz band am plifiers. The herm etically sealed metal-ceramic
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MGFC40V5258
MGFC40V5258
ltem-01:
ltem-51
5.8 ghz amplifier 10w
5.8GHz
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3642G
Abstract: No abstract text available
Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m
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