MGFC44V3436 Search Results

MGFC44V3436 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGFC44V3436		Mitsubishi	3.4-3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET		Original	PDF

MGFC44V3436 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MGFC44V3436 Abstract: power amplifier 5 ghz Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4 - 3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET O U TLIN E FEATURES 2M IN DESCRIPTION The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC44V3436 MGFC44V3436 -45dBc 25deg power amplifier 5 ghz	PDF
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC44V3436 3.4 – 3.6 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC44V3436 MGFC44V3436 -45dBc	PDF
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC44V3436 3.4 – 3.6 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC44V3436 MGFC44V3436 -45dBc	PDF
C 34 F Abstract: MGFC44V3436 GAAS FET AMPLIFIER f 10Mhz to 2 GHz Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4~3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3436 is an internally impedance matched GaAs power FET especially designed for use in 3.4~3.6 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC44V3436 MGFC44V3436 -45dBc 120mA item-51, 10MHz C 34 F GAAS FET AMPLIFIER f 10Mhz to 2 GHz	PDF
F236 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4 - 3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC44V3436 MGFC44V3436 -45dBc 25deg June/2004 F236	PDF
60Ghz Abstract: MGFC44V3436 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4 - 3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC44V3436 MGFC44V3436 -45dBc 25deg 60Ghz	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4~3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC44V3436 is an internally im pedance matched GaAs power FET especially designed for use in 3.4~3.6 GHz band amplifiers. The herm etically sealed m etal-ceramic	OCR Scan	MGFC44V3436 FC44V3436 -45dBc 120mA	PDF