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    Samtec Inc TMMH-115-01-T-D-RA

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    DigiKey TMMH-115-01-T-D-RA Tube 4,371 1
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    Mouser Electronics TMMH-115-01-T-D-RA 56
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    Powell Electronics TMMH-115-01-T-D-RA 230 1
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    Samtec Inc TMMH-115-01-F-DV-ES-A-TR

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    Samtec Inc TMMH-115-01-F-DV

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    Mouser Electronics TMMH-115-01-F-DV 17
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    Samtec Inc TMMH-115-01-G-DV

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    Samtec Inc TMMH-115-01-F-DV-M-TR

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    DigiKey TMMH-115-01-F-DV-M-TR Cut Tape 186 1
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    MH115 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MH1156-BGA121 Atmel 1.6 Million gates Sea of Gate / Embedded Array Original PDF
    MH1156E Atmel Rad Hard 1.6M Used Gates 0.35 um CMOS Sea of Gates/Embedded Array Original PDF
    MH1156ER Atmel 1.6M Used Gates 0.35 CMOS Sea of Gates / Embedded Arrays Original PDF
    MH1156ES Atmel 1.6M Used Gates 0.35 CMOS Sea of Gates / Embedded Arrays Original PDF
    MH1156R Atmel 1.6M Used Gates 0.35 CMOS Sea of Gates / Embedded Arrays Original PDF
    MH1156S Atmel 1.6M Used Gates 0.35 CMOS Sea of Gates / Embedded Arrays Original PDF

    MH115 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ATMEL 634

    Abstract: ambit rev 4 LSI CMOS GATE ARRAY PO11V5 MH1099 MH1242 705uA
    Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TPRAM; Gate Level or Embedded


    Original     		5962-01B01 4138F ATMEL 634 ambit rev 4 LSI CMOS GATE ARRAY PO11V5 MH1099 MH1242 705uA PDF

    AOI222

    Abstract: AOI2223 AOI222H MH1099 MH1242 0.35-um CMOS standard cell library inverter
    Text: Features • High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries • System Level Integration Technology Cores on Request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:


    Original     		5962-01B01 4138E AOI222 AOI2223 AOI222H MH1099 MH1242 0.35-um CMOS standard cell library inverter PDF

    tristate buffer

    Abstract: smd transistor AO HEX TO DECIMAL tristate buffer cmos A101 A201 MH1099E MH1156E PO11F MH1332E
    Text: Features • High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal • Up to 1.198M Used Gates and 512 Pads with 3.3V, 3V and 2.5V Libraries when Tested to Space Quality Grades • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries when Tested to


    Original     		4110F tristate buffer smd transistor AO HEX TO DECIMAL tristate buffer cmos A101 A201 MH1099E MH1156E PO11F MH1332E PDF

    DIGITAL IC TESTER report for project

    Abstract: atmel 504 IO33 ATC18RHA 4261C virage IO33
    Text: Features • Comprehensive Library of Standard Logic and I/O Cells • ATC18RHA Core and IO18 pads Designed to Operate with VDD = 1.8V +/- 0.15V as Main • • • • • • • • • • • • • • Condition IO33 Pad Libraries Provide Interfaces to 3.3+/-0.3V Environments


    Original     		ATC18RHA 655Mbps) 4261C DIGITAL IC TESTER report for project atmel 504 IO33 ATC18RHA virage IO33 PDF

    ta 8268

    Abstract: qml-38535 4090 F 01B01 marking code 33916 MH1242ER smd code MH1
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 09 – 32 and appendix A. - phn 02-02-11 Thomas M. Hess B Add Case outline U and T. Editorial changes throughout. - phn 03-06-03 Thomas M. Hess C Change maximum supply voltage range from 3.6 V to 4.0 V and from 5.5 V to


    Original     		F7400 ta 8268 qml-38535 4090 F 01B01 marking code 33916 MH1242ER smd code MH1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MH100SE Series Low Cost, 1W Ultra-Miniature DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Key Features: • 1W Output Power


    Original     		MH100SE F/50V PDF

    MH1099

    Abstract: MH1242 PO11V5 4138G
    Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)


    Original     		5962-01B01 4138G MH1099 MH1242 PO11V5 PDF

    A101

    Abstract: A201 MH1099E MH1156E MH1242E MH1332E AMI 1108
    Text: Features • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


    Original     		20nts 4110H A101 A201 MH1099E MH1156E MH1242E MH1332E AMI 1108 PDF

    A101

    Abstract: A201 MH1099E MH1156E MH1242E MH1332E atmel 838 atmel edac dsp radiation hard
    Text: Features • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


    Original     		4110I A101 A201 MH1099E MH1156E MH1242E MH1332E atmel 838 atmel edac dsp radiation hard PDF

    DIGITAL IC TESTER report for project

    Abstract: ATMEL 644 IO33 4261F ATC18RHA Genesys Logic MQFP-F196 5962-06B02 atmel 216 4261b
    Text: Features • • • • • • • • • • • • • • • • Comprehensive Library of Standard Logic and I/O Cells ATC18RHA Core pads Designed to Operate with VDD = 1.8V +/- 0.15V as Main Condition IO33 Pad Libraries Provide Interfaces to 3.3+/-0.3V and 2.5 +/- 0.25V Environments


    Original     		ATC18RHA 655Mbps) 4261F DIGITAL IC TESTER report for project ATMEL 644 IO33 Genesys Logic MQFP-F196 5962-06B02 atmel 216 4261b PDF

    DIGITAL IC TESTER report for project

    Abstract: MCGA349 PL33RXZ atmel 504 ATMEL 644 ATC18RHA 5962-06B02 MQFP-T352 IO33 mcga
    Text: Features • • • • • • • • • • • • • • • • Comprehensive Library of Standard Logic and I/O Cells ATC18RHA Core pads Designed to Operate with VDD = 1.8V +/- 0.15V as Main Condition IO33 Pad Libraries Provide Interfaces to 3.3+/-0.3V and 2.5 +/- 0.25V Environments


    Original     		ATC18RHA 655Mbps) 4261E DIGITAL IC TESTER report for project MCGA349 PL33RXZ atmel 504 ATMEL 644 5962-06B02 MQFP-T352 IO33 mcga PDF

    ATMEL 634

    Abstract: ambit rev 4 C 828 dual mcga SRAM edac A101 A201 MH1099E MH1156E MH1242E
    Text: Features • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


    Original     		4110G ATMEL 634 ambit rev 4 C 828 dual mcga SRAM edac A101 A201 MH1099E MH1156E MH1242E PDF

    PO88

    Abstract: ttl buffer AOI222 AOI2223 AOI2223H AOI222H MH1099 MH1242 PRD21 PRD29V5
    Text: Features • High Speed - 170 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.6 Million Used Gates and 596 pads, with 3.3V, 3V, and 2.5V libraries • System Level Integration Technology Cores on request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:


    Original     		250MHz 220MHz 800MHz 5962-01B01 PO88 ttl buffer AOI222 AOI2223 AOI2223H AOI222H MH1099 MH1242 PRD21 PRD29V5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


    Original     		4110Lâ PDF

    4110L

    Abstract: ATMEL 622 MH1RT QML A101 A201 MH1099E MH1156E MH1242E MH1332E
    Text: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


    Original     		4110L ATMEL 622 MH1RT QML A101 A201 MH1099E MH1156E MH1242E MH1332E PDF

    ATMEL 634

    Abstract: MH1099 MH1242 PO11V5 dual lvds vhdl
    Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)


    Original     		5962-01B01 4138G ATMEL 634 MH1099 MH1242 PO11V5 dual lvds vhdl PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)


    Original     		5962-01B01 4138Gâ PDF

    A101

    Abstract: A201 MH1099E MH1156E MH1242E MH1332E HEX TO DECIMAL ATMEL 220 dsp radiation hard
    Text: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


    Original     		4110K A101 A201 MH1099E MH1156E MH1242E MH1332E HEX TO DECIMAL ATMEL 220 dsp radiation hard PDF

    Atmel 544

    Abstract: atmel 504 atmel 404 MQFPT352 MLGA625 725m 5962-06B02 atmel h 404 MH1242E 404D
    Text: Features • • • • • • • • • • • • • • • • • Comprehensive Library of Standard Logic and I/O Cells Up to 6.5 usable Mgates equivalent NAND2 Operating voltage 1.8V for core and 3.3V or 2.5V for I/O’s Memory Cells Compiled or synthesized to the Requirements of the Design


    Original     		655Mbps) 4261G Atmel 544 atmel 504 atmel 404 MQFPT352 MLGA625 725m 5962-06B02 atmel h 404 MH1242E 404D PDF

    Transistor Equivalent list po55

    Abstract: Structure of D flip-flop DFFSR tristate buffer sis 968 PO-44Z PRU11 AC/DC drive nec 78054 PO22 tristate buffer cmos
    Text: Features • High Speed - 180 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.198 M Used Gates and 512 Pads with 3.3 V, 3V and 2.5V libraries when tested to space quality grades • Up to 1.6M Used Gates and 596 Pads with 3.3 V, 3V and 2.5V libraries when tested to


    Original     		PDF

    5962-01B01

    Abstract: perfo 124 373 01B01 vhdl code 4794 qml-38535 3629 BP 4090 Datasheet ci 4009 5962-01B0115V9A 5962-01B0111V
    Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 02-02-11 Thoma M. Hess Add device type 09 – 32 and appendix A. - phn REV A SHEET 55 REV A A A A A A A A A A A A A A A A A A A A SHEET 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 REV A A


    Original     		F7400 5962-01B01 perfo 124 373 01B01 vhdl code 4794 qml-38535 3629 BP 4090 Datasheet ci 4009 5962-01B0115V9A 5962-01B0111V PDF

    atmel13

    Abstract: 0.18-um CMOS technology characteristics DIGITAL IC TESTER report for project ATMEL 644 IO33 IC Ensemble ATC18RHA IBIS model Genibis Atmel IO33 ATC18RHA atmel 336
    Text: Features • Comprehensive Library of Standard Logic and I/O Cells • ATC18RHA Core and IO18 pads Designed to Operate with VDD = 1.8V +/- 0.15V as Main • • • • • • • • • • • • Condition IO33 Pad Libraries Provide Interfaces to 3.3+/-0.3V Environments


    Original     		ATC18RHA 655Mbps) 4261B atmel13 0.18-um CMOS technology characteristics DIGITAL IC TESTER report for project ATMEL 644 IO33 IC Ensemble IBIS model Genibis Atmel IO33 ATC18RHA atmel 336 PDF

    qml-38535

    Abstract: 6227 4090 Datasheet ci 4009 Y-351 vhdl code 4794 smd code MH1
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 09 – 32 and appendix A. - phn 02-02-11 Thomas M. Hess B Add Case outline U and T. Editorial changes throughout. - phn 03-06-03 Thomas M. Hess C Change maximum supply voltage range from 3.6 V to 4.0 V and from 5.5 V to


    Original     		F7400 qml-38535 6227 4090 Datasheet ci 4009 Y-351 vhdl code 4794 smd code MH1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MH100SE Series Low Cost, 1W Ultra-Miniature DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Key Features: • 1W Output Power


    Original     		MH100SE F/50V PDF