MHZ PNP TRANSISTOR Search Results

MHZ PNP TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
2SA1943	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N

MHZ PNP TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AF279 Abstract: tfk transistor germanium-pnp-mesa-hf-transistor AF279 transistor tfk 140 Germanium mesa AF 279 042PF Text: Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: V orstufen bis 900 MHz Applications: Pre stages up to 900 MHz Besondere Merkmale: Features: • Passivierte O berfläche • • Leistungsverstärkung 16 dB • Power gain 16 dB	OCR Scan		PDF
AF280 Abstract: germanium-pnp-mesa-hf-transistor oszillator Germanium mesa AF 280 042PF Text: Nicht für Neuentwicklungen Not for new developments AF 280 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Misch- und O szillatorstufen bis 900 MHz Applications: M ixer and oscilla to r stages up to 900 MHz Besondere Merkmale:	OCR Scan		PDF
TFK U 111 B Abstract: 6 TFK 106 tfk 106 AF106 tfk 518 tfk u 111 TFK AF TFK 111 tfk 325 germanium-pnp-mesa-hf-transistor Text: Nicht für Neuentwicklungen Not for new developments AF 106 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 260 MHz Applications: Pre, m ixer and o scilla to r stages up to 260 MHz Besondere Merkmale:	OCR Scan	01mA- TFK U 111 B 6 TFK 106 tfk 106 AF106 tfk 518 tfk u 111 TFK AF TFK 111 tfk 325 germanium-pnp-mesa-hf-transistor	PDF
AF 109 R Abstract: AF109R af109 germanium-pnp-mesa-hf-transistor Text: ¡fi Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: G eregelte Vorstufen bis 260 MHz Applications: C ontrolled pre-stages up to 260 MHz Besondere Merkmale: Features: • Leistungsverstärkung 16,5 dB • Power gain 16.5 dB • Rauschmaß < 4 ,8 dB	OCR Scan	AF109R AF 109 R AF109R af109 germanium-pnp-mesa-hf-transistor	PDF
AF239 Abstract: germanium-pnp-mesa-hf-transistor Tfk 239 900 mhz oscillator AF 239 Text: * AF 239 S 'W Nicht für Neuentwicklungen Not for new developments 4W Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixer and o scilla to r stages up to 900 MHz	OCR Scan		PDF
AF239 Abstract: germanium-pnp-mesa-hf-transistor AF 239 Text: 'W Nicht für Neuentwicklungen Not for new developments AF 239 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixe r and o scilla to r stages up to 900 MHz	OCR Scan		PDF
transistor BF 506 Abstract: BF506 S45C 51785 to 92 z transistor f 506 z.2x Text: BF 506 Silizium-PNP-HF-Transistor Silicon PNP RF Transistor Anwendungen: Oszillator-, M isch- und ungeregelte Vorstufen bis 300 MHz Applications: O scillator- m ixer and u n controlled p re a m p lifie r stages up to 300 MHz Besondere Merkmale: Features: • Kleine R ückwirkungskapazität	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: Quad Low-Noise NPN / PNP Transistor Array T H AT Corporation THAT140 FEATURES APPLICATIONS • Two Matched NPN Transistors Two Matched PNP Transistors · Monolithic Construction · Low Noise — 0.75 nV/ Hz PNP — 0.8 nV/ Hz (NPN) · High Speed — ft= 350 MHz (NPN)	Original	THAT140 THAT140	PDF
AFY18 Abstract: AFY18E AFY18D germanium mesa transistor pnp Germanium Transistor afy1 Text: AFY18 PNP Mesa transistor for antenna amplifiers up to 250 MHz The AFY18 is a germanium PNP RF epitaxial mesa transistor in a case 5 C3 DIN 41 873 TO -39 . The collector is electrically connected to the case. The A F Y 18 is designed for antenna amplifiers up to 250 MHz.	OCR Scan	AFY18 AFY18 Q60106-Y18- AFY18E AFY18D germanium mesa transistor pnp Germanium Transistor afy1	PDF
"PNP Transistor array" Abstract: pnp 8 transistor array dual matched PNP ST 2n3904 TRANSISTOR PNP "Microphone Preamplifiers" NPN Two monolithic transistors DIELECTRICALLY ISOLATED pin configuration NPN transistor 2n3906 pnp array 2N3904 Text: T H AT Corporation Quad Low-Noise NPN / PNP Transistor Array THAT140 FEATURES APPLICATIONS • Two Matched NPN Transistors Two Matched PNP Transistors · Monolithic Construction · Low Noise — 0.75 nV/ Hz PNP — 0.8 nV/ Hz (NPN) · High Speed — ft= 350 MHz (NPN)	Original	THAT140 THAT140 "PNP Transistor array" pnp 8 transistor array dual matched PNP ST 2n3904 TRANSISTOR PNP "Microphone Preamplifiers" NPN Two monolithic transistors DIELECTRICALLY ISOLATED pin configuration NPN transistor 2n3906 pnp array 2N3904	PDF
AFY16 Abstract: Germanium Transistor 71lb 21b22 Text: AFY16 PNP Transistor for RF-application up to 900 MHz The A FY 16 is a germanium PNP RF mesa transistor in a case 18 A 4 DIN 41 876 TO-72 . The terminals are electrically insulated from the case. The AFY 16 is designed for use in pre-stages as well as in mixer and oscillator stages up to 900 MHz.	OCR Scan	AFY16 AFY16 18A4DIN41876 Q60106 f-200 Germanium Transistor 71lb 21b22	PDF
CBC 557 C Abstract: CBC 557 AF139 1j 400 CBC 557 B TFK AF 72136 72136 p AF 139 germanium-pnp-hf-transistor Text: Germanium-PNP-HF-Transistor Germanium PNP RF Transistor Anwendungen: Vor-, Misch- und Oszillatorstufen bis 860 MHz Applications: Pre, mixer and oscillator stages up to 860 M Hz Besondere Merkmale: Features: • Leistungsverstärkung >9 dB • Pow er gain > 9 dB	OCR Scan		PDF
2N5415 Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >[email protected]/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) [email protected]/.25	OCR Scan	O-39/TO-5 2N3867 2N3868 2N4930 2N4931 2N5094 2N5149 2N5153 2N5415	PDF
2STA1962 Abstract: 2STC5242 JESD97 Text: 2STA1962 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -230 V ■ Complementary to 2STC5242 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a PNP transistor manufactured	Original	2STA1962 2STC5242 2STA1962 2STC5242 JESD97	PDF

Untitled Abstract: No abstract text available Text: Quad Low-Noise PNP Transistor Array T H AT Corporation THAT120 FEATURES APPLICATIONS • Four Matched PNP Transistors · Microphone Preamplifiers · Low noise — 0.75 · Tape Head Preamplifiers · High Speed — 325 MHz ft · Current Sources · Excellent Matching - 500 mV typ	Original	THAT120 THAT120	PDF
2N3553 equivalent Abstract: vk-200 ferrite choke vk200* FERROXCUBE 2N3553 VK-200 VK200 MM4019 ATC200 Text: MM4019 silicon PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed for use as complement to NPN 2N 3553 in VH F and UHF amplifier applications for military and industrial equipment. • Power Output - Pout = 2.0 W (Typ) @ Pjn = 0.5 W, f = 400 MHz	OCR Scan	MM4019 2N3553 MM4019/2N3553 ATC-200 2N3553 equivalent vk-200 ferrite choke vk200* FERROXCUBE VK-200 VK200 MM4019 ATC200	PDF
"PNP Transistor array" Abstract: "Microphone Preamplifiers" THAT120 Text: Quad Low-Noise PNP Transistor Array T H AT Corporation THAT120 FEATURES APPLICATIONS • Four Matched PNP Transistors · Microphone Preamplifiers · Low noise — 0.75 · Tape Head Preamplifiers · High Speed — 325 MHz ft · Current Sources · Excellent Matching - 500 mV typ	Original	THAT120 2N3906-class "PNP Transistor array" "Microphone Preamplifiers" THAT120	PDF
"PNP Transistor array" Abstract: "Microphone Preamplifiers" antilog amplifier THAT120 Text: T H AT Corporation Quad Low-Noise PNP Transistor Array THAT120 FEATURES APPLICATIONS • Four Matched PNP Transistors · Microphone Preamplifiers · Low noise — 0.75 · Tape Head Preamplifiers · High Speed — 325 MHz ft · Current Sources · Excellent Matching - 500 mV typ	Original	THAT120 2N3906-class "PNP Transistor array" "Microphone Preamplifiers" antilog amplifier THAT120	PDF
AFY42 Abstract: U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B Text: AFY42 PNP Mesa transistor for pre-stages, mixer and oscillator stages up to 900 MHz AFY 42 is a germanium PNP mesa transistor in a case 18 A 4 DIN 41 876 TO —72 . The leads are electrically insulated from the case. It is particularly suitable for use in	OCR Scan	AFY42 AFY42 60106-Y BIfi03 U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B	PDF
TRANSISTOR SMD CODE PACKAGE SOT89 Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 4 SMD CODE SOT89 lc b3 smd transistor smd transistor code b3 BFQ149 smd transistor b3 BFQ14 10 GHz PNP transistor smd transistor HB Text: Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFQ149 PINNING PNP tra nsistor in a S O T89 envelope. It is intended for use in U HF a pplications such as broadband aerial am plifiers 30 to 860 MHz and in m icrow ave am plifiers such as radar	OCR Scan	BFQ149 -75mA; TRANSISTOR SMD CODE PACKAGE SOT89 TRANSISTOR SMD CODE PACKAGE SOT89 4 SMD CODE SOT89 lc b3 smd transistor smd transistor code b3 smd transistor b3 BFQ14 10 GHz PNP transistor smd transistor HB	PDF
pnp 8 transistor array Abstract: BD 104 NPN LA400 ARRAY resistor npn 8 transistor array transistor array pnp bD 106 transistor Text: AT&T Data Sheet ^ ss oo5i 52 Benefits • High-frequency performance, typical fr of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design approval	OCR Scan	LA400 rev400 50AL203140 DS86-352LBC pnp 8 transistor array BD 104 NPN ARRAY resistor npn 8 transistor array transistor array pnp bD 106 transistor	PDF
BD 104 NPN Abstract: pnp 8 transistor array LA400 npn 8 transistor array BD+104+NPN Text: AT&T Data Sheet oo5i 52 ^ ss Benefits • High-frequency performance, typical fr of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design approval	OCR Scan	LA400 50AL203140 DS86-352LBC BD 104 NPN pnp 8 transistor array npn 8 transistor array BD+104+NPN	PDF
Untitled Abstract: No abstract text available Text: lAiur Data Sheet Linear Array 005152 Benefits • High-frequency performance, typical fî of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design	OCR Scan	LA400 50AL203140 DS86-352LBC	PDF
AF239S Abstract: Germanium mesa Text: 11419771 AF239S MESA PNP UHF PREAMPLIFIER The AF 239S is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It is particularly designed as preamplifier, mixer and oscillator up to 900 MHz. ABSOLUTE MAXIMUM RATINGS V C ES VcEO ^E B O 'c P.o, Collector-em itter voltage VBE = 0	OCR Scan	AF239S AF239S Germanium mesa	PDF

MHZ PNP TRANSISTOR Search Results

MHZ PNP TRANSISTOR Result Highlights (5)

MHZ PNP TRANSISTOR Datasheets Context Search

AF279

AF280

TFK U 111 B

AF 109 R

AF239

AF239

transistor BF 506

Untitled

AFY18

"PNP Transistor array"

AFY16

CBC 557 C

2N5415

2STA1962

Untitled

2N3553 equivalent

"PNP Transistor array"

"PNP Transistor array"

AFY42

TRANSISTOR SMD CODE PACKAGE SOT89

pnp 8 transistor array

BD 104 NPN

Untitled

AF239S