Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86628 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package Overview Features Built-in schottky barrier diode: VR = 15 V, IF = 700 mA
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2002/95/EC)
MTM86628
MTM86628
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Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes LNP720321 Panel Display Units Full Color Type • Structure Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VCC – 0.3 to +5.25 V Operating supply voltage LED operating supply voltage di p Pl lan nclu ea e se pla m d m des
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LNP720321
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2sk40
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK4029 Silicon N-channel MOSFET For switching circuits Unit: mm • Features High-speed switching Low ON resistance Ron Incorporating a built-in gate protection-diode
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2002/95/EC)
2SK4029
2sk40
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X701 (MA10701) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For high frequency rectification 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 VRRM Forward current (Average)
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2002/95/EC)
MA3X701
MA10701)
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Untitled
Abstract: No abstract text available
Text: CCD Area Image Sensor MN3726FT,MN3726AT 6mm type-1/3 512H High-Resposivity CCD Area Image Sensors • Overview Part Number Size MN3726FT MN3726AT 6mm(type-1/3) ■ Features di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo
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MN3726FT
MN3726AT
MN3726AT
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Untitled
Abstract: No abstract text available
Text: CCD Area Image Sensor MN3728FT,MN3728AT 6mm type-1/3 768H CCD Area Image Sensor • Overview Part Number Size MN3728FT MN3728AT 6mm(type-1/3) ■ Features di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing
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MN3728FT
MN3728AT
MN3728AT
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melcher lgr 2320-2
Abstract: melcher lgr 1001-2 auo 014 Melcher lgr Melcher LGR 2020-2 schematic diagram ac-dc supply schematic diagram 240 AC to 110 DC converter auo 002 melcher dc dc converter melcher
Text: Benign Environment AC-DC Converters <40 Watt HR/GR Series 10 and 25 Watt AC-DC Converters HR Series GR Series Single and dual output • Universal AC input • Class II equipment double insulation • 3000 V AC input to output electric strength test • High efficiency up to 86%
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Untitled
Abstract: No abstract text available
Text: SLR-322 Series K / Light Emitting Diodes SLR-322 Series ? > y * 3.1mm PCB Direct-Mountable, Reflection Small Lamps SLR-322 -> V - X I t , GaP ¡ fie 2.5mm M.-j 1 5 ThiS • Dimensions (U nit: mm) b /cg/M!! 7 > 7 T ‘t o 4 nw%3tfe, 2m<nu>x\.z& Mit sm m n zn ,
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SLR-322
SLR-322VR©
SLR-322VC©
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Untitled
Abstract: No abstract text available
Text: T emic TSHA550. S e mi f o n d u i t ors GaAlAs Infrared Emitting Diodes in 05mm T-F/O Package Description The TSH A 550. series are high efficiency infrared em it ting diodes in G aA lA s on G aA lA s technology, m olded in a clear, untinted plastic package.
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TSHA550.
syst10
15-Jul-96
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n zurück V rsm V rrm dv/ SEMIPACK 3 Thyristor / Diode Modules Itrms (maximum values for continuous operation 350 A 420 A 220 A (88 °C) 260 A (82 °C) 220 A (88 °C) 260 A (82 °C) SKKT SKKT SKKH SKKH V drm dt)cr 350 A 420 A Itav (sin. 180, Tcase —. . .)
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KT21010
SKMT250
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LZ-230 zener diode
Abstract: lz 04 "50 watt zener diode" zener 7.5 B 47
Text: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 TYPE NO. Zener Voltage V z @ lz Test Current lz Zener Impedance Zz Maximum Zener Current |ZM TYPE NO. Zener Voltage V z @ lz Test Current lz
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1N3993A
1N3994A
1N3995A
1N3996A
1N3997A
1N3998A
1N3999A/1N2970B
1N4000A/1N2971B
1N2972B
1N2973B
LZ-230 zener diode
lz 04
"50 watt zener diode"
zener 7.5 B 47
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SLR-54-MG
Abstract: slr-54 SLR-54VR SLR54VR ITT ZF 18 3ALF SLR-54MC SLR54MG SLR54 SLR-54MG
Text: -f SLR-54 Series K / Light Emitting Diodes SLR-54 <j> 4.0 mm Series Reflecting Lamps S L R -5 4 v V - X l i , 4 m m < 7 )m yc& , v lV v ii^ a lo m i- ^ ^ ;£ ia / D im e n s io n s (Unit: mm) GaP £ 2 m m < n u > x (D s -f8 t r e m e ly e f f ic ie n t
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SLR-54
SLR-54
SLR-54-MG
SLR-54VR
SLR54VR
ITT ZF 18
3ALF
SLR-54MC
SLR54MG
SLR54
SLR-54MG
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ERN04-20
Abstract: ERN04 AA180
Text: E R N 4 4 o o a : Outline Drawings GENERAL-USE RECTIFIER DIODE J l : : Features • “h D iff u sed -j u n ctio n • iUJSEScttfllja Compression-contact type : A p p lic a tio n s • Si Buttery chargers Brush-less generators • ft* . Electric railway and chemical use rectifiers
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erim04
ERN04-20
575x103
ERN04-20
ERN04
AA180
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Untitled
Abstract: No abstract text available
Text: SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE "SuperBAT" ISSUE 2 - October 1997 I-| ZHCS750 O FEATURES: * Low VF * High Current Capability APPLICATIONS: * DC - DC converters * Mobile telecomms * PCMCIA PARTMARK DETAIL ZS7 ABSOLUTE M A X IM U M RATINGS.
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ZHCS750
750mA
15rward
15mmx15mm
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MH16
Abstract: MH17 MH18
Text: Bk MOSPEC MH16 thru MH18 Surface Mount High Efficiency Power Rectifiers HIGH EFFICIENCY RECTIFIERS Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.
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60TYPICAL
MH16
MH17
MH18
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SLR 2 050 G
Abstract: No abstract text available
Text: SLR-56 Series -f# — F / Light Emitting Diodes SLR-56 J 5 # tJ f2 1 £ K -A :7 > y <f>5.0 mm Series Reflecting Low-Dome Lamps Dimensions (U n it: mm) S L R -5 6 i / ' J - X l t , ¡ t t I 5 m m £ t i le d mms. ±t 4'£, -To H 7 > 7 ? L/T, LTKHH4'^liAs''jZ'
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SLR-56
SLR-56
SLR 2 050 G
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MU19
Abstract: MU110 MU17 MU18 M-U110 CP1510
Text: Bk MOSPEC MU17 thru MU110 Surface Mount Ultrafast Power Rectifiers ULTRA FAST RECTIFIERS Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.
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MU110
MU110
MU19
MU17
MU18
M-U110
CP1510
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Diode LT 213
Abstract: semikron thyristor
Text: SEMIKRON V rsm V rrm 420 A SEMIPACK 3 Thyristor/ Diode Modules 250 A SKKT213 SKKT 253 dv/dt cr Itrms (m axim um valu e s fo r continuous operation) 370 A V drm V /jis I 420 A I Itav (sin. 180; 250 A case = 85 °C V V SKKT SKKT 900 800 500 213/08 D 253/08 D
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SKKT213
SKKH213
KT25308B
Diode LT 213
semikron thyristor
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6h6 diode metal
Abstract: b722 6H6 diode h 48 diode general electric DIODE RECTIFIER general electric
Text: 6H6 PAGE I 6H6 Description and Rating TWIN DIODE — * < * GENERAL DESCRIPTION P ri nc i pa l A p p li ca ti o n: d i o d e w i t h i n d iv i du al s e p a r a t e base pins. Th e type 6H6 is a twinc a t h o d e s D r o u g h t out to The t>H6 is designed
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B7-22
ET-T297
6h6 diode metal
b722
6H6 diode
h 48 diode
general electric DIODE RECTIFIER
general electric
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n zurück V rsm V rrm dv/ SEMIPACK 3 Thyristor / Diode Modules Itrms (maximum values for continuous operation 370 A V drm dt)cr 420 A 370 A 420 A Itav (sin. 180; Toase = 85 °C) V 900 V 800 V/|xs SKKT 213 SKKT 253 230 A 253 A 230 A 250 A SKKT
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GP608
Abstract: GP600 GP601 GP602 GP604 GP606 GP610
Text: DIOTEC ELECTRONICS CORP UJLU r v r r SÔE » • EfiHTID? GDODISI b7D « D I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310) 767-7958 Data Sheet No.: GPDP-601-A p, s , » *Ul-\ / 6 AMP GENERAL PURPOSE SILICON DIODES
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GPDP-601-A
M1L-STD-202,
GP608
GP600
GP601
GP602
GP604
GP606
GP610
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PDF
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marking KDK SOT23
Abstract: No abstract text available
Text: AZ23C2V7-AZ23C51 Vishay Telefunken 300 mW Dual Surface Mount Zener Diodes Features SOT-23 surface mount package 300 mW power dissipation rating Ideally suited for automatic insertion AVZ for both diodes in one case is < 5% Common cathode style available see DZ series
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AZ23C2V7-AZ23C51
OT-23
01-Apr-99
-Apr-99
marking KDK SOT23
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g4pc50fd
Abstract: g4pc50 g4pc50f g4p-c50 g4pc IRG4PC50FD IRG4PC50F
Text: International IGR Rectifier PD 9.1469A IRG4PC50FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .
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IRG4PC50FD
O-247AC
g4pc50fd,
g4pc50fd
g4pc50
g4pc50f
g4p-c50
g4pc
IRG4PC50FD
IRG4PC50F
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY RECTIFIER DIODES, MODULE, SINGLE, CENTER *S 1 P a rt Num ber M a x im u m P e a k F o rw a rd M a x im u m M a x im u m T y p ic a l A ve rage S u r g e C u rre n t Fw d Voltage R e ve rse J u n c tio n R e ctifie d In v B r s a @ 8 3m s g ft tt e tt l<j
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A10030
A10040
A10045
A10050
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