indiana general
Abstract: F624-19 F627 S175-50 F627-8 S-175 hf power amplifiers 2-30 mhz BYISTOR BYI-1 F625-9
Text: S175 - 50 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz GENERAL DESCRIPTION CASE OUTLINE The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequency bands. Its high collector voltage simplifies the design of wideband, SSB linear amplifiers. The transistor chip is
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S175-50
5-240pF
75-480pF
2700pF
F627-9,
F625-9,
F624-19,
F627-8,
indiana general
F624-19
F627
F627-8
S-175
hf power amplifiers 2-30 mhz
BYISTOR
BYI-1
F625-9
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Stackpole 57-9322-11
Abstract: EB-27 motorola 2N6368 ecom-2989 Granberg Design of H. F. Wideband Power Transformers AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors EB-32 complementary symmetry amplifier Indiana general ferrite core 2N6367
Text: Order this document by AN593/D MOTOROLA SEMICONDUCTOR 33333 APPLICATION NOTE AN593 BROADBAND LINEAR POWER AMPLIFIERS USING PUSH-PULL TRANSISTORS Prepared by: Helge Granberg RF Circuits Engineering INTRODUCTION Linear power amplifier operation, as used in SSB
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AN593/D
AN593
Stackpole 57-9322-11
EB-27 motorola
2N6368
ecom-2989
Granberg
Design of H. F. Wideband Power Transformers
AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors
EB-32 complementary symmetry amplifier
Indiana general ferrite core
2N6367
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mrf150
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150/D
MRF150
MRF150/D*
mrf150
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MOTOROLA circuit for mrf150
Abstract: motorola MRF150 mrf150 equivalent arco capacitors choke vk200 vk200 choke MRF150 "RF MOSFET" VK200-4B 2204B
Text: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150/D
MRF150
MOTOROLA circuit for mrf150
motorola MRF150
mrf150 equivalent
arco capacitors
choke vk200
vk200 choke
MRF150
"RF MOSFET"
VK200-4B
2204B
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UNELCO MICA CAPACITORS
Abstract: "RF MOSFET" vk200 choke 2204B J101 MRF150 VK200
Text: Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF150 Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150/D
MRF150
UNELCO MICA CAPACITORS
"RF MOSFET"
vk200 choke
2204B
J101
MRF150
VK200
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF150 Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150
MRF150
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MOTOROLA circuit for mrf150
Abstract: MRF150 2204B J101 VK200 169 MHz RF CHIP 18AWG Nippon capacitors
Text: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-E ffect Transistor N–Channel Enhancement–Mode MRF150 Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150/D
MRF150
MOTOROLA circuit for mrf150
MRF150
2204B
J101
VK200
169 MHz RF CHIP
18AWG
Nippon capacitors
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MOTOROLA circuit for mrf150
Abstract: mrf150 motorola MRF150 mrf150 equivalent DIODE MOTOROLA B34 B34 motorola diode 910 b34 vk200 choke 2204B J101
Text: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150/D
MRF150
to150
MOTOROLA circuit for mrf150
mrf150
motorola MRF150
mrf150 equivalent
DIODE MOTOROLA B34
B34 motorola
diode 910 b34
vk200 choke
2204B
J101
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vk200 choke
Abstract: arco 465 UNELCO MICA CAPACITORS VK200-4B arco capacitors 262 k 246 transistor fet VK200 FERRITE 2204B J101 MRF140
Text: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics
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MRF140/D
MRF140
vk200 choke
arco 465
UNELCO MICA CAPACITORS
VK200-4B
arco capacitors 262
k 246 transistor fet
VK200 FERRITE
2204B
J101
MRF140
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics
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MRF140/D
MRF140
MRF140/D*
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MRF138
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF138/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF138 N–Channel Enhancement–Mode . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.
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MRF138/D
MRF138
MRF138/D*
MRF138
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MOTOROLA circuit for mrf150
Abstract: UNELCO MICA CAPACITORS motorola MRF150 mrf150 equivalent Unelco J101 BH Rf transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF150 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150
MRF150
MOTOROLA circuit for mrf150
UNELCO MICA CAPACITORS
motorola MRF150
mrf150 equivalent
Unelco J101
BH Rf transistor
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D913
Abstract: UNELCO MICA CAPACITORS VK200
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F150 The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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RF150
D913
UNELCO MICA CAPACITORS
VK200
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MOTOROLA circuit for mrf150
Abstract: MRF150 mrf150 equivalent UNELCO MICA CAPACITORS
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150
MRF150
MOTOROLA circuit for mrf150
mrf150 equivalent
UNELCO MICA CAPACITORS
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MRF140 equivalent
Abstract: arco capacitors 262
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics
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MRF140
MRF140 equivalent
arco capacitors 262
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D1115
Abstract: Arco 262 capacitor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field-Effect T ransistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts
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MRF140
D1115
Arco 262 capacitor
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MRF426
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP
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MRF426
MRF426
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MRF138
Abstract: MCM 2128 Variable Capacitors Arco
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF138 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed fo r power am plifier applications in industrial, commercial and am ateur radio equipment to 175 MHz. • Superior High O rder IMD
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MRF138
MRF138
MCM 2128
Variable Capacitors Arco
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"class AB Linear" hf
Abstract: allen bradley CC series Mrf426
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F426 The RF Line NPN Silicon RF P o w er Tran sisto r . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP
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MRF426
"class AB Linear" hf
allen bradley CC series
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BYISTOR
Abstract: indiana general ACR1ANS175-50 F625-9 Acrian S175-50-3 indiana general F624-19 s 175-50 DM15 S175-50
Text: 0182998 ACRIAN INC T? D E jjO lflE T T fi D D D im t 0 S 1 7 5 - 5 0 175 WATTS - 50 VOLTS 2-30 MHz GENERAL DESCRIPTION The S175-50 is a state-of-the-art 50 volt device designed for class A, AB, or C operation in the HF/VHF frequency bands. Its high collector voltage
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S175-50
S175-50
175-5CERAMIC
25-240pF
75-480pF
2700pF
F627-9,
F625-9,
F624-19,
F627-8,
BYISTOR
indiana general
ACR1ANS175-50
F625-9
Acrian
S175-50-3
indiana general F624-19
s 175-50
DM15
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blx13
Abstract: 2204B
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line N P N Silico n RF Pow er T ran sistor MRF426 . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP
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MRF426
MRF426
blx13
2204B
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mrf138
Abstract: ARC-2
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for power am plifier applications in industrial, com m ercial and am ateur radio equipment to 175 MHz. • Superior High O rder IMD
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MRF138
ARC-2
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B0646
Abstract: BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660
Text: asc D • û23SbOS D G 0 4 3 CJ1 1 I I S I E G PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF>91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington
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fl23Sb05
DQ43CI1
T-33-31
OP-66)
644/BD
BD648,
BD644.
BO646.
BO648.
BD660
B0646
BO650
80846
B0648
Bo648
bd648
D237 DIODE
BD646
Q62702-D235
BD660
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AV2026
Abstract: LM1B75 T05B 3 volt audio amplifier class D schematic lm1875 amplifier IC LM 324 LM audio power amplifier LM1875 LM1875T Rs-600n
Text: Manch 1995 LM1875 20W Audio Power Amplifier General Description Features The LM1875 is a monolithic power amplifier offering very low distortion and high quality performance for consumer audio applications. • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LM1875 delivers 20 watts into a 4 fi or 8i f load on
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LM1875
20-3A
AV2026
LM1B75
T05B
3 volt audio amplifier class D schematic
lm1875 amplifier
IC LM 324
LM audio power amplifier
LM1875T
Rs-600n
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