XC6419
Abstract: XBP-101 XC9257
Text: Spring/Summer 2014 Power Management Solutions MICRO IN THIS ISSUE DC/DC WITH INTEG RATED COIL 1.5A, 5.5V CONSTANT ON TIME ONLY 2.5 x 3.2 x 1.0mm XC8107/08/09 XCL213/14 85m1 High Function Power Switch 1.5A, Hi-SAT-COT Step-Down Micro DC/DC Converter with Integrated Coil
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XC8107/08/09
XCL213/14
XC9270/71
XCL211/12
XC9252
XCL101
XC9248
XC9306
XC9260/61
XC9131/35/36
XC6419
XBP-101
XC9257
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features x x x Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Collector-base Voltage :VCBO=50V BC337 , VCBO=30V(BC338) x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL rating 1
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BC337-16/25/40
BC338-16/25/40
625Watts
BC337)
BC338)
10mAdc,
BC337
BC338
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2SC2149
Abstract: 2SC2148 micro X
Text: DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors PACKAGE DIMENSIONS encapsulated into new hermetic stripline packages, "micro X".
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2SC2148,
2SC2149
2SC2149
2SC2148
micro X
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ne3511s02 s2p
Abstract: NE3511S02-A NE3511S02 HS350 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D lnb ku-band nec microwave NE35
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS
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NE3511S02
NE3511S02-T1C
NE3511S02-T1C-A
NE3511S02-T1D
NE3511S02-T1D-A
ne3511s02 s2p
NE3511S02-A
NE3511S02
HS350
NE3511S02-T1C
NE3511S02-T1C-A
NE3511S02-T1D
lnb ku-band
nec microwave
NE35
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ne3511s02 s2p
Abstract: NE3511S02 NE3511S02-T1D rt/duroid 5880 HS350 NE3511S02-T1C NE3511S02-T1C-A lnb ku-band rogers 5880
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package
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NE3511S02
NE3511S02-T1C
NE3511S02-T1C-A
NE3511S02-T1D
NE3511S02-T1D-A
ne3511s02 s2p
NE3511S02
NE3511S02-T1D
rt/duroid 5880
HS350
NE3511S02-T1C
NE3511S02-T1C-A
lnb ku-band
rogers 5880
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KDS 4.000 Crystal
Abstract: KDS 4B 12 MHZ crystal KDS crystal 20.000
Text: SH67L19A 4K 4-bit Micro-controller with LCD Driver Features SH6610C-Based Single-Chip 4-bit Micro-Controller With LCD Driver ROM: 4K X 16bits RAM: 303X 4bits - 47 System control register - 256 Data memory - 228 bits LCD RAM Operation voltage: 1.2V - 1.7V 24 CMOS Bi-directional I/O pads
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SH67L19A
SH6610C-Based
16bits
768kHz
32kHz
131kHz.
455kHz
SEG10
SEG11
SEG12
KDS 4.000 Crystal
KDS 4B 12 MHZ crystal
KDS crystal 20.000
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D5-1-40174-1
Abstract: pmm-bd pm driver 103H7522 pmm-bd-53130 PMM-MD-53031-10 PMM-MD-53030 103H8582 103H5505-70 PMM-MD-53030-10
Text: Pulse I/F DC power input The 5-Phase Stepping Driver PMM-MD-53030-10 PMM-MD-53031-10 DC 24 V/36 V Micro-step (500 x 1 to 250 divisions) Applicable motors ø 60 ø 86 Characteristics Micro-step function available Smooth operation without vibration at low speeds can be realized.
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PMM-MD-53030-10
PMM-MD-53031-10
250-division
103H7851-70
103H7852-70
103H7853-70
PMM-MA-50034
PMAPA1S6B01
D5-1-40174-1
pmm-bd
pm driver
103H7522
pmm-bd-53130
PMM-MD-53031-10
PMM-MD-53030
103H8582
103H5505-70
PMM-MD-53030-10
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTP722MA ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP— VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline,
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ZXTP722MA
ZXT4M322
MLP322
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Untitled
Abstract: No abstract text available
Text: Micro Family 72 V Input Actual size: 2.28 x 1.45 x 0.5 in 57,9 x 36,8 x 12,7 mm C S US C NRTL US DC-DC Converter Module Features Applications • DC input range: 43 – 110 V continuous • Isolated output • Encapsulated circuitry for shock and Railway/Transportation system applications including communications systems,
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Untitled
Abstract: No abstract text available
Text: Micro Family 24 V Input Actual size: 2.28 x 1.45 x 0.5 in 57,9 x 36,8 x 12,7 mm C S US C NRTL US DC-DC Converter Module Features Applications • DC input range: 18 - 36 V • Isolated output • Operation to 16 V at 75% power Industrial and process control, distributed power, medical, ATE, communications,
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Untitled
Abstract: No abstract text available
Text: Micro Family 72 V Input Actual size: 2.28 x 1.45 x 0.5 in 57,9 x 36,8 x 12,7 mm C S US C NRTL US DC-DC Converter Module Features Applications • DC input range: 43 – 110 V continuous • Isolated output • Encapsulated circuitry for shock and Railway/Transportation system applications including communications systems,
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Untitled
Abstract: No abstract text available
Text: Micro Family 72 V Input Actual size: 2.28 x 1.45 x 0.5 in 57,9 x 36,8 x 12,7 mm C S US C NRTL US DC-DC Converter Module Features Applications • DC input range: 43 – 110 V continuous • Isolated output • Encapsulated circuitry for shock and Railway/Transportation system applications including communications systems,
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Untitled
Abstract: No abstract text available
Text: Micro Family 110 V Input Actual size: 2.28 x 1.45 x 0.5 in 57,9 x 36,8 x 12,7 mm C S US C NRTL US DC-DC Converter Module Features Applications • DC input range: 66 – 154 V continuous • Isolated output • Encapsulated circuitry for shock and Railway/Transportation system applications including communications systems,
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Untitled
Abstract: No abstract text available
Text: Micro Family 110 V Input Actual size: 2.28 x 1.45 x 0.5 in 57,9 x 36,8 x 12,7 mm C S US C NRTL US DC-DC Converter Module Features Applications • DC input range: 66 – 154 V continuous • Isolated output • Encapsulated circuitry for shock and Railway/Transportation system applications including communications systems,
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Untitled
Abstract: No abstract text available
Text: ADV MICRO MEMORY MfiE » • DS5752Ô GGBOflG11) Ô ■ AMD4 m i * A m Advanced Micro Devices 9 9 C 1 0 A 256 X 48 Content Addressable Memory DISTINCTIVE CHARACTERISTICS ■ 256word x 48-bit Content Addressable Memory (CAM) ■ - Optimized for Address Decoding in Local Area
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DS5752Ã
256word
48-bit
48-blt
48-bit
08125-009B
Am99ClOA
8125-012A
8125-011A
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AM28F256
Abstract: No abstract text available
Text: ADV MICRO MEMORY 4ÖE T> □2S7SEÖ GD30bSS 7 IAMD4 Preliminary Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time Low power consumption - 30 mA maximum active current
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GD30bSS
Am28F256
32-pin
-32-pin
Am28F256-95C4JC
Am28F256-95C3JC
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GXL-12F
Abstract: GXL-12FT-P GXL-1 GXL-12FTI gxl-8fi gxl-8f
Text: Micro size Installable anywhere and everywhere • New shape These are micro-sized, new-shaped sensors. • Low price with high accuracy The GXL series are the lowest price inductive sensors SU N X offers with performance as high as 0.02mm repeat accuracy.
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SUS304)
S-GXL12-1
CN-03
GXL-12F
GXL-12FT-P
GXL-1
GXL-12FTI
gxl-8fi
gxl-8f
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AMD a 462 socket pinout
Abstract: No abstract text available
Text: ADV MICRO MEMORY 38E Q 02s7saa 7 hamdm ggetöoq ¿Ü^PreOmlnarypllfc" r= 4 (,- ß - 2 l Am28F512 Advanced Micro Devices 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time Low power consum ption
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02s7saa
Am28F512
32-pin
T-90-10
AMD a 462 socket pinout
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28F010
Abstract: AM28F010 AMD 478 socket pinout
Text: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption
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G030715
T-46-13-27
Am28F010
-32-Pin
32-Pin
100mA
Am28F010-95C4JC
Am28F010-95C3JC
28F010
AMD 478 socket pinout
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data programmers DIP PLCC
Abstract: AMD 478 socket pinout
Text: ADV MICRO MEMORY BÖE •.G2S?SSfl QGETÖBQ S ■ A M » 4 a Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memoty DISTINCTIVE CHARACTERISTICS ■ High performance - 9 0 ns maximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc+1 V
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Am28F010
-32-P
32-Pin
02S752fl
data programmers DIP PLCC
AMD 478 socket pinout
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audi a3
Abstract: No abstract text available
Text: ADVANCED MICRO DEVICES S*ÌE D • 025752S ODMS'ìDa 0b7 ■ AUDI PRELIMINARY A m 2 7 L V 0 1 0 131,072 x 8-Bit CMOS Low Voltage, One Time Programmable Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS ■ ■ 3.3 V ± 0.3 V Vcc read operation High performance at 3.3 Vcc
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025752S
Am27LV010
025752S
00H2117
6262A
audi a3
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTORS 2 SC 2148 , 2 SC 2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are econom ical microwave transistors PACKAGE DIMENSIONS encapsulated into new herm etic stripline packages, "micro X".
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2SC2148,
2SC2149
2SC2149.
2SC2149
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Untitled
Abstract: No abstract text available
Text: ADV MICRO {MEMORY} fli 0257528 ADV MICRO MEMORY D E § 0557520 0055515 1 89D f-4 6 -2 3 -0 8 üf 25595 Am27S07 64-Bit Noninverting-Output Bipolar RAM > 3 PO DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16-word x 4-bit low power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor
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Am27S07
64-Bit
16-word
WF00121Ã
07318B
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Untitled
Abstract: No abstract text available
Text: JAN 1 g M ITSUBISHI MICROCOMPUTERS M 3 7471M 2-X X X F P ,M 37471M 4-X X X F P PRELIMINARY M 37471M 8-X X X F P S ING LE-CHIP 8-B IT CMOS MICRO CO M PUTER DISCRIPTION The M 37471M 2-XXXFP is a sin g le -c h ip m icro co m p ute r d e PIN CONFIGURATION TOP VIEW
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7471M
37471M
56-pin
56P6N
H-L0437-A
KI-9102
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