fan 7320
Abstract: atmel 936 ttl buffer MG2014P MG2044P MG2142P MG2270P TM1019 radiation hard PLL OAI22 capacitance
Text: MG2RTP Radiation Hardened 0.5 Micron Sea of Gates Introduction The MG2RTP series is a 0.5 micron, array based, CMOS product family. Several arrays up to 490k cells cover all system integration needs. The MG2RTP is manufactured using SCMOS3/2RTP, a 0.5 micron drawn, 3 metal
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OAI22
fan 7320
atmel 936
ttl buffer
MG2014P
MG2044P
MG2142P
MG2270P
TM1019
radiation hard PLL
OAI22 capacitance
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14020
Abstract: MG2000 MG2001 MG2002 MG2004 MG2010 MG2044 MG2055
Text: MG2 0.5 Micron Sea of Gates Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS process.
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14020
MG2000
MG2001
MG2002
MG2004
MG2010
MG2044
MG2055
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32M DPRAM
Abstract: MG2044E MG2091E MG2140E MG2194E MG2265E MG2360E MG2480E MG2700E TM1019
Text: MG2RT Radiation Tolerant 0.5 Micron Sea of Gates Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured using SCMOS3/2RT, a 0.5 micron drawn, 3 metal layers
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Tree65
32M DPRAM
MG2044E
MG2091E
MG2140E
MG2194E
MG2265E
MG2360E
MG2480E
MG2700E
TM1019
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toshiba tc110g
Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective
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36168
Abstract: No abstract text available
Text: MG2 MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS
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Bout12,
BOUT12
36168
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MG2000
Abstract: MG2001 MG2002 MG2004 MG2010 MG2044 MG2055 MATRA MHS, MG2
Text: MG2 MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS 3/2, a 0.5 micron drawn, 3 metal layers
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BOUT12
MG2000
MG2001
MG2002
MG2004
MG2010
MG2044
MG2055
MATRA MHS, MG2
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atmel 738
Abstract: MG1070 ATMEL 706 MG1001 atmel 829
Text: MG1 0.6 Micron Sea of Gates Introduction The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using SCMOS 2/2, a 0.6 micron drawn, 3 metal layers CMOS
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out12,
BOUT12
atmel 738
MG1070
ATMEL 706
MG1001
atmel 829
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jtag 14
Abstract: No abstract text available
Text: MG1 0.6 Micron Sea of Gates Introduction The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using SCMOS 2/2, a 0.6 micron drawn, 3 metal layers CMOS
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out12,
BOUT12
jtag 14
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MT29F16G08cbaca
Abstract: MT29F16G08CBACAWP mt29f16g08cba MT29F16G08C MT29F16G08CB MT29F16G08 NAND Flash MLC Micron NAND Flash MLC Die MT29F16G08CBACAW mt29f16g
Text: Specifications Data Sheets MLC Brand: Micron ~ Datasheet: NAND Flash MLC. 16132Gb. Async. Sync L72A ~ Rev. Date: 0212011, File Size: 2.92 MB B~s/Cell: Bus Wi<hh: xa CE Chill Count: 1 Chill Enable: Dual Component Density: 16Gb Fall: Micron Family: NAND Flash
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16132Gb.
48-pin
Exterm11:
MT29F16G08cbaca
MT29F16G08CBACAWP
mt29f16g08cba
MT29F16G08C
MT29F16G08CB
MT29F16G08
NAND Flash MLC
Micron NAND Flash MLC Die
MT29F16G08CBACAW
mt29f16g
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Untitled
Abstract: No abstract text available
Text: Temic MG2 Semiconductors MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS prod uct family. Several arrays up to 700k cells cover all sys tem integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS
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L74A
Abstract: AP-A-11
Text: Specifications Data Sheets MLC Brand: Micron ~ Datasheet: NAND 641128 12561512Gb. MLC. Async/Sync. L7 4A Q Rev. Date: 0412011, File Size: 3.08 MB B~s/Cell: Bus Wi<hh: xa CE Chill Count: 4 Chill Enable: Dual Component Density: 512Gb Depth: 8Gb Fall: Micron
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12561512Gb.
512Gb
52-pad
Exterm11:
L74A
AP-A-11
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MT29F128G08C
Abstract: MT29F128 MT29F128G08CECABH1-12
Text: Specifications Data Sheets MLC Brand: Micron ~ Datasheet: NAND 641128 12561512Gb. MLC. Async/Sync. L7 4A Q Rev. Date: 0412011, File Size: 3.08 MB B~s/Cell: Bus Wi<hh: xa CE Chill Count: 2 Chill Enable: Dual Component Density: 128Gb Depth: 16Gb Fall: Micron
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12561512Gb.
128Gb
100-ball
Exterm11:
MT29F128G08C
MT29F128
MT29F128G08CECABH1-12
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Micron TLC
Abstract: micron emmc Micron NAND onfi MICRON NAND MLC TLC nand MICRON NAND sLC micron ecc nand ONFI micron emmc application note SLC NAND endurance
Text: Micron Memory Which NAND solution is best for my design? Micron offers a full line of high-performance memory solutions—from SLC, MLC, and TLC to Serial NAND, e•MMC , and MCPs—for a variety of applications. And we work with chipset vendors, OS designers, and other
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Untitled
Abstract: No abstract text available
Text: Micron Confidential and Proprietary P420m HHHL PCIe NAND SSD Features P420m Half-Height and Half-Length PCIe NAND Flash SSD MTFDGAR1T4MAX, MTFDGAR700MAX Features • • • • • • • • • • • • • • • • Micron 25nm MLC NAND Flash ONFI 2.1-compliant Flash interface
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P420m
MTFDGAR700MAX
700GB,
700GB:
128KB
09005aef858c5716
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MTFC4GACAANA-4M IT
Abstract: MTFC4GACAANA MTFC8GACAANA-4M IT micron marking code information MTFC8GLDDQ-4M IT MTFC4GAC MTFC4GACA JESD84-B451 4gb nand flash MTFC4G MTFC4GACAANA-4M
Text: Preliminary‡ Micron Confidential and Proprietary 4GB, 8GB: e•MMC Features e·MMC Memory MTFC4GACAANA-4M IT, MTFC8GACAANA-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash • 100-ball TBGA (RoHS compliant, "green" package)
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100-ball
51-compliant
84-B451)
11-signal
09005aef856fbc21
ps8210
MTFC4GACAANA-4M IT
MTFC4GACAANA
MTFC8GACAANA-4M IT
micron marking code information MTFC8GLDDQ-4M IT
MTFC4GAC
MTFC4GACA
JESD84-B451
4gb nand flash
MTFC4G
MTFC4GACAANA-4M
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32GB eMMC
Abstract: MTFC8GLDEA-4M IT micron eMMC 5.0 emmc bga 162 BGA 221 eMMC micron emmc application note 221 ball eMMC memory emmc 4.41 firmware operation MTFC4G micron emmc 4.5
Text: Micron Confidential and Proprietary 4GB, 8GB, 16GB, 32GB, 64GB: e•MMC Features e·MMC Memory MTFC4GMDEA-4M IT, MTFC8GLDEA-4M IT, MTFC16GJDEC-4M IT, MTFC32GJDED-4M IT, MTFC64GJDDN-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash
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MTFC16GJDEC-4M
MTFC32GJDED-4M
MTFC64GJDDN-4M
169-ball
09005aef8523ca91
4gb-64gb
441-it
32GB eMMC
MTFC8GLDEA-4M IT
micron eMMC 5.0
emmc bga 162
BGA 221 eMMC
micron emmc application note
221 ball eMMC memory
emmc 4.41 firmware operation
MTFC4G
micron emmc 4.5
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MTFC4GACAJCN-4M IT
Abstract: MTFC8GAKAJCN-4M IT MTFC8GACAAAM-4M IT MTfc8g Micron MT47H64M16HR-3 IT Manufacturer ID list eMMC Specification eMMC 4.0 MTFC4G 221 ball eMMC memory MTFC32G
Text: Micron Confidential and Proprietary 4GB, 8GB, 16GB, 32GB, 64GB: e•MMC Features e·MMC Memory MTFC4GMVEA-4M IT, MTFC8GLVEA-4M IT, MTFC16GJVEC-4M IT, MTFC32GJVED-4M IT, MTFC64GJVDN-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash
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MTFC16GJVEC-4M
MTFC32GJVED-4M
MTFC64GJVDN-4M
169-ball
09005aef84a4d6f8
64gb-it
MTFC4GACAJCN-4M IT
MTFC8GAKAJCN-4M IT
MTFC8GACAAAM-4M IT
MTfc8g
Micron MT47H64M16HR-3 IT
Manufacturer ID list eMMC
Specification eMMC 4.0
MTFC4G
221 ball eMMC memory
MTFC32G
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MG1070
Abstract: No abstract text available
Text: MG1 MG1 Sea of Gates Series 0.6 Micron CMOS Description The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using
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emmc bga 162
Abstract: BGA 221 eMMC MTFC4GLDDQ-4M IT MTFC32GJDDQ-4M IT emmc CID eMMC 4.41 application note MTFC4GLDDQ-4M MMC04G 221 ball eMMC memory MMC08G
Text: Micron Confidential and Proprietary 4GB, 8GB, 16GB, 32GB: e•MMC Features e·MMC Memory MTFC4GLDDQ-4M IT, MTFC8GLDDQ-4M IT MTFC16GJDDQ-4M IT, MTFC32GJDDQ-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash • 100-ball LBGA (RoHS 6/6compliant)
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MTFC16GJDDQ-4M
MTFC32GJDDQ-4M
100-ball
09005aef8523caab
4-32gb
100b-it
emmc bga 162
BGA 221 eMMC
MTFC4GLDDQ-4M IT
MTFC32GJDDQ-4M IT
emmc CID
eMMC 4.41 application note
MTFC4GLDDQ-4M
MMC04G
221 ball eMMC memory
MMC08G
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PDF
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b7E ]> • blllS^H DOQTSTb 122 ■ MRN ADVANCE MICRON 64K MT58LC64K18A6 18 SYNCHRONOUS SRAM 64K x 18 SRAM +3.3V SUPPLY, FULLY REGISTERED I/O AND LINEAR BURST COUNTER FEATURES • • • • • « • • • • • • • Fast access times: 7,10,12 and 15ns
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MT58LC64K18A6
MT58LC64K18A6EJ-10
MT56LC64K18A6
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Untitled
Abstract: No abstract text available
Text: MG2RT Radiation Tolerant 0.5–µm CMOS Sea–of–Gates 100k Rad Low Dose Rate Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured using SCMOS3/2RT, a 0.5 micron drawn, 3 metal layers
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BOUT12
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Untitled
Abstract: No abstract text available
Text: Temic MG1 S e m i c o n d u c t o r s MG1 Sea of Gates Series 0.6 Micron CMOS Description The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using
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BOUT12
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Untitled
Abstract: No abstract text available
Text: MwT-4 26 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y Unitsinixm -► j 50 I * - 1.5dB NOISE FIGURE AT 12 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 180 MICRON GATE WIDTH CHOICE OF CHIP AND TWO PACKAGE TYPES \+m *\ 50 k 356
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MT29F256G08CUCCB
Abstract: MT29F32G08CB mt29f32g08cba
Text: Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08CBACA, MT29F64G08CEACA, MT29F64G08CFACA, MT29F128G08CXACA, MT29F64G08CECCB, MT29F64G08CFACB MT29F128G08CKCCB, MT29F256G08CUCCB Features
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128Gb,
256Gb
MT29F32G08CBACA,
MT29F64G08CEACA,
MT29F64G08CFACA,
MT29F128G08CXACA,
MT29F64G08CECCB,
MT29F64G08CFACB
MT29F128G08CKCCB,
MT29F256G08CUCCB
MT29F256G08CUCCB
MT29F32G08CB
mt29f32g08cba
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