Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MICRON RESISTOR Search Results

    MICRON RESISTOR Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    37-1409 Coilcraft Inc Tuning tool Visit Coilcraft Inc Buy
    37-2182 Coilcraft Inc Tuning tool Visit Coilcraft Inc Buy

    MICRON RESISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 4’8 M EGx32 MICRON I SDRAM DIMMs TECHNOLOGY, INC. MT2LSDT432U, MT4LSDT832UD SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View


    OCR Scan
    MT2LSDT432U, MT4LSDT832UD 100-pin, PDF

    XH018

    Abstract: No abstract text available
    Text: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron


    Original
    XH018 XH018 18-micron PDF

    nd02d2

    Abstract: No abstract text available
    Text: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design


    OCR Scan
    VGC450/VGC453 VGC450/453 nd02d2 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MICRON I 16’ 32 M E Gx32 SDRAM DIMMs TECHNOLOGY, INC. MT8LSDT1632U, MT8LSDT3232U SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View


    OCR Scan
    MT8LSDT1632U, MT8LSDT3232U 100-pin, 128MB PDF

    2 bit magnitude comparator

    Abstract: NCR asic NCR Microelectronics Division 1-Bit full adder 30076 7217 up down counter The Western Design Center AOI22 using NAND gate construct an inverter ncr 400
    Text: A S I C APPLICATION SPECIFIC INTEGRATED CIRCUITS "i NCR 62A00 2-Micron Gate Array Products fM H ffik • 2-micron drawn, 1.5-micron effective, DLM process • 600 to 8,500 equivalent gate complexity with up to 95% utilization • Commercial, industrial, automotive and


    OCR Scan
    62A00 2 bit magnitude comparator NCR asic NCR Microelectronics Division 1-Bit full adder 30076 7217 up down counter The Western Design Center AOI22 using NAND gate construct an inverter ncr 400 PDF

    micron sram

    Abstract: No abstract text available
    Text: PRESS RELEASE CYPRESS INTRODUCES ITS FIRST 0.35-MICRON SRAM Announces Working Silicon on 0.25-Micron Products SAN JOSE, Calif., November 18, 1997 - Cypress Semiconductor today introduced its first SRAM built in a 0.35-micron feature size. The introduction comes on the heels of Cypress’s first


    Original
    35-MICRON 25-Micron CY7C1021, 35-micron ahe10 micron sram PDF

    m25p40vmb6txx

    Abstract: M25PX64 M25P40-VMB6 M25P UID M25P40 JESD22-A114A M25P vdfpn8 MLP8 VDFPN8 package
    Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx


    Original
    M25P40 M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; m25p40vmb6txx M25PX64 M25P40-VMB6 M25P UID JESD22-A114A M25P vdfpn8 MLP8 VDFPN8 package PDF

    rpp1k1

    Abstract: No abstract text available
    Text: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate


    Original
    XT018 XT018 18-micron rpp1k1 PDF

    UM 9515

    Abstract: D5A-3210 D5A-1100 D5A-2100 D5A-3200 D5A-7400 plunger grease OMRON m5-1 D5A-3310 E39-F4
    Text: High-Precision Switch D5A High-Precision Switch for Detecting Micron Unit Displacement H H 1-micron or 3-micron repeat accuracy H 24 VDC solid state output or 12 VDC/ 24 VAC contact output H Solid state output model has LED indicator for ease of monitoring operation


    Original
    1-800-55-OMRON UM 9515 D5A-3210 D5A-1100 D5A-2100 D5A-3200 D5A-7400 plunger grease OMRON m5-1 D5A-3310 E39-F4 PDF

    toshiba tc110g

    Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
    Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective


    OCR Scan
    PDF

    208-MIL

    Abstract: mlp8 numonyx
    Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx


    Original
    M25P40 M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; 208-MIL mlp8 numonyx PDF

    Untitled

    Abstract: No abstract text available
    Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx


    Original
    M25P40 M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; PDF

    Untitled

    Abstract: No abstract text available
    Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx


    Original
    M25P40 M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; PDF

    M25P40-VMB6

    Abstract: 208-MIL 208mils MLP8 package M25P40-VMW6G
    Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx


    Original
    M25P40 M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40-VMB6 208-MIL 208mils MLP8 package M25P40-VMW6G PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 16 MEG X 32 SDRAM DIMM MICRON' I TECHNOLOGY, INC. M T 4L S D T 1632U D SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View


    OCR Scan
    100-pin, 096-cycle 1632U PDF

    4LC4M

    Abstract: No abstract text available
    Text: 4’8 M EGx32 DRAM DIMMs MICRON I TECHNOLOGY, INC. D P A |\/| MT2LDT432U X , MT4LDT832U (X) _ _ _ I WI f j | j I I I I •I For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES


    OCR Scan
    MT2LDT432U MT4LDT832U 100-pin, 096-cycle 100-Pin 4LC4M PDF

    M25P

    Abstract: M25P40vmn6p M25PX64 mlp8 micron VFQFPN8
    Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx


    Original
    M25P40 M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P M25P40vmn6p M25PX64 mlp8 micron VFQFPN8 PDF

    PT6042

    Abstract: VGC453 model values for 0.18 micron technology cmos nd02d2
    Text: V L S I TECHNOLOGY INC T3aa3M? oooaaio □ M7E D V L S I T echn o lo gy , in c . VTI ' PRELIMINARY -0 9 VGC450/VGC453 LIBRARY O.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS


    OCR Scan
    VGC450/VGC453 VGC453 VGC450 PT6042 model values for 0.18 micron technology cmos nd02d2 PDF

    integrated circuit TL 2262

    Abstract: PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology VSC470
    Text: V L S I TECHNOLOGY INC M7E D VTI V L S I T ech n o lo g y , in c . T - m PRELIMINARY - m VSC470 SERIES 0.8-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon gate CMOS technology


    OCR Scan
    VSC470 integrated circuit TL 2262 PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology PDF

    PC5004

    Abstract: VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding
    Text: V L S I T ech n o lo gy, inc. O.6-MICRON _ ASIC PRODUCT FAMILY GENERAL SPECIFICATIONS FEATURES BENEFITS • 0.6-micron 0.55-micron effective two- and three-layer metal CMOS technology. Typical 2-input NAND (FO=2) spec - 5 V (4.5 to 5.5 V): 190 ps, 2.6 nW/MHz


    OCR Scan
    55-micron PC5004 VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding PDF

    PT6045

    Abstract: VSC370 PT6005
    Text: V L S I TECHNOLOGY INC 4 7E D • =1300347 V L S I Tech n o lo gy , in c . 0000070 7 ■ VTI 'T - v z - m VSC370 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology


    OCR Scan
    VSC370 85-micron 000fiö T-42-41 PT6045 PT6005 PDF

    130 nm CMOS standard cell library

    Abstract: 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1 VGC450/VGC453
    Text: V L S I Tech n o lo gy , in c . oec t a PRELIMINARY VGC450/VGC453 LIBRARY O.8-MICRON GATE A R R A Y S E R IE S FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS


    OCR Scan
    VGC450/VGC453 VGC453 VGC450 130 nm CMOS standard cell library 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1 PDF

    VGT300039

    Abstract: PT6045 VGT300022 PT6005
    Text: V L S I TECHNOLOGY INC 47 E D T3flfl34? n o n a T T a V L S I Tech n o lo gy , in c . 3 VTI T -H Z -d -C R VGT350/VGT353 LIBRARY I.O-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology


    OCR Scan
    T3flfl34? VGT350/VGT353 85-micron VGT350/353 VGT300039 PT6045 VGT300022 PT6005 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4’ 8 M EGx64 MICRON I n 'm m n'zSE£ NONBUFFERED DRAM DIMMs D RAM MT4LDT464A X , MT8LDT864A (X) _ _ _ I WI f j | j I I I 1* 1 V y W •— ■— For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/


    OCR Scan
    MT4LDT464A MT8LDT864A 168-pin, 096-cycle 168-PIN PDF