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    MICRON SEMICONDUCTOR Search Results

    MICRON SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MICRON SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    micron sram

    Abstract: No abstract text available
    Text: PRESS RELEASE CYPRESS INTRODUCES ITS FIRST 0.35-MICRON SRAM Announces Working Silicon on 0.25-Micron Products SAN JOSE, Calif., November 18, 1997 - Cypress Semiconductor today introduced its first SRAM built in a 0.35-micron feature size. The introduction comes on the heels of Cypress’s first


    Original     		PDF 35-MICRON 25-Micron CY7C1021, 35-micron ahe10 micron sram

    dram structure

    Abstract: 2240 6T SRAM micron sram
    Text: Joint News Release by Infineon and Micron Infineon Technologies and Micron Technology Announce Cooperation to Develop ‘CellularRAM’ Munich, Germany/Boise, Idaho, USA, June 24, 2002 - Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced they


    Original     		PDF INFMP200206 dram structure 2240 6T SRAM micron sram

    MT29F32G08AFACA

    Abstract: MT29F32G08 MT29F32G0
    Text: Specifications Data Sheets B~s/Cell: SLC Brand: Micron Bus Wi<hh: x8 Chill Em1ble: Single Component Density: 32Gb Depth: 2Gb Fall: Micron Family: NAND Flash Generation l>rimaly : First Generation 110 : Common 110 Channels: 1 lnte1face: Async Manufacturer: Micron


    Original     		PDF 48-pin MT29F32G08AFACAVVP MT29F32G08AFACAVI/PES MT29F32G08AFACA MT29F32G08 MT29F32G0

    MT29F32G08AFACAWP-IT

    Abstract: MT29F32G08AFACAWP-ITES MT29F32G08AFA MT29F32G08 MT29F32G08AFACAWP
    Text: Specifications Data Sheets B~s/Cell: SLC Brand: Micron Bus Wi<hh: x8 Chill Em1ble: Single Component Density: 32Gb Depth: 2Gb Fall: Micron Family: NAND Flash Generation l>rimaly : First Generation 110 : Common 110 Channels: 1 lnte1face: Async Manufacturer: Micron


    Original     		PDF 48-pin MT29F32G08AFACAWP-ItC MT29F32G08AFACAWP-ITES MT29F32G08AFACAWP-IT MT29F32G08AFA MT29F32G08 MT29F32G08AFACAWP

    XH018

    Abstract: No abstract text available
    Text: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron


    Original     		PDF XH018 XH018 18-micron

    MT29F128G08AJAAAWP-ITES

    Abstract: MT29F128G08AJAAAWP-IT MT29F128G08AJAAAWP-I MT29F128G08AJAAA MT29F128G08AJAAAWP MT29F128 mt29f128g08 MT29F128G
    Text: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa Chill Em1ble: Single Component Density: 128Gb Depth: 16Gb Fall: Micron Family: NAND Flash 110 : Common Mmmfacturer: Micron Mode Operation: Single Die


    Original     		PDF 128Gb 48-pin Exterm11: 3216411281256Gb MT29F128G08AJAAAWP-I MT29F128G08AJAAAWP-ITES MT29F128G08AJAAAWP-IT MT29F128G08AJAAA MT29F128G08AJAAAWP MT29F128 mt29f128g08 MT29F128G

    Infineon automotive semiconductor technology roadmap

    Abstract: Infineon technology roadmap micron sram
    Text: Joint News Release by Infineon Technologies and Micron Technology Infineon and Micron Announce Partnership to Develop Reduced Latency DRAM Munich, Germany / Boise, Idaho, USA – May 30, 2001 – Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced that


    Original     		PDF 600Mbit/sec/pin INFMP200105 Infineon automotive semiconductor technology roadmap Infineon technology roadmap micron sram

    memory 9652

    Abstract: No abstract text available
    Text: FOR IMMEDIATE RELEASE Contact: Grant Jones Micron Technology, Inc. 208 368-4400 Web Site URL <http://www.micron.com> Fax-on-demand: (800) 239-0337 MICRON TECHNOLOGY, INC., REPORTS RESULTS FOR THE THIRD FISCAL QUARTER OF 2000 Boise, Idaho, June 22, 2000 - Micron Technology, Inc., today reported quarterly net


    Original     		PDF

    rpp1k1

    Abstract: No abstract text available
    Text: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate


    Original     		PDF XT018 XT018 18-micron rpp1k1

    IDT ZBT SRAM 1994

    Abstract: samsung 10K filing SEC semico 2000F PC2100 general architecture of ddr sdram PC133 registered reference design MT28S4M16 DDR SDRAM Component Micron technology micron dram code
    Text: B u y e r s Volume 7, Issue 4 Product and service news for Micron customers 4Q00 MBN Extra: Micron Unveils New Corporate Brand “Micron Buyers News Extra” is your opportunity to hear from Micron’s management team This newsletter contains forwardlooking statements regarding the company and the industry. These particular


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard-Area Silicon Avalanche Photodiodes 230, 500 µm PD-LD Inc. offers 2 sizes of standard Silicon Avalanche Photodiodes in several styles of fiber coupled packages. The semiconductors are available in two standard sizes: 230 micron or 500 micron active areas. Our Silicon APDs cover


    Original     		PDF 880nm 905nm

    Untitled

    Abstract: No abstract text available
    Text: CD74LCX16646 S E M I C O N D U C T O R Fast CMOS 3.3V 16-Bit Registered Transceiver December 1997 Features Description • Advanced 0.6 micron CMOS Technology Harris Semiconductor’s CD74LCX16646 is produced in an advanced 0.6 micron CMOS technology, achieving industry


    Original     		PDF CD74LCX16646 16-Bit CD74LCX16646 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: Proper Installation Procedures for Micron SODIMMs STEP 3 Micron Technology is one of the most efficient and innovative semiconductor companies in the world. Through our global operations in Asia, Europe, and North America, we manufacture and market a complete line of DRAM components and modules, Flash


    Original     		PDF

    World transistors and ic

    Abstract: mixed signal fpga datasheet XC4000XV xilinx silicon device
    Text: SHI PPI NG The World’s First 0.25-micron FPGA Family L 8 eading the logic industry with the most advanced semiconductor manufacturing processes, Xilinx, in partnership with United Microelectronics Corporation UMC has developed a new 0.25-micron FPGA process technology. This leading-edge technology is the


    Original     		PDF 25-micron XC4000XV XC40125XV, XC40125XV 18-micron World transistors and ic mixed signal fpga datasheet XC4000XV xilinx silicon device

    Untitled

    Abstract: No abstract text available
    Text: Temic MG2 Semiconductors MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS prod­ uct family. Several arrays up to 700k cells cover all sys­ tem integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS


    OCR Scan     		PDF BOUT12

    Untitled

    Abstract: No abstract text available
    Text: CD74LCX16646 Semiconductor Fast CMOS 3.3V 16-Bit Registered Transceiver December 1997 Description Features Advanced 0.6 micron CMOS Technology Harris Sem iconductor’s CD74LCX16646 is produced in an advanced 0.6 micron CMOS technology, achieving industry


    OCR Scan     		PDF CD74LCX16646 16-Bit CD74LCX16646 MO-118-AB,

    2 bit magnitude comparator

    Abstract: NCR asic NCR Microelectronics Division 1-Bit full adder 30076 7217 up down counter The Western Design Center AOI22 using NAND gate construct an inverter ncr 400
    Text: A S I C APPLICATION SPECIFIC INTEGRATED CIRCUITS "i NCR 62A00 2-Micron Gate Array Products fM H ffik • 2-micron drawn, 1.5-micron effective, DLM process • 600 to 8,500 equivalent gate complexity with up to 95% utilization • Commercial, industrial, automotive and


    OCR Scan     		PDF 62A00 2 bit magnitude comparator NCR asic NCR Microelectronics Division 1-Bit full adder 30076 7217 up down counter The Western Design Center AOI22 using NAND gate construct an inverter ncr 400

    Untitled

    Abstract: No abstract text available
    Text: CD74LCX16952 Semiconductor Fast CMOS 3.3V 16-Bit Registered Transceiver January 1998 Description Features • Advanced 0.6 micron CMOS Technology Harris’ CD74LCX16952 is produced in an advanced 0.6 micron CMOS technology, achieving industry leading speed


    OCR Scan     		PDF CD74LCX16952 16-Bit CD74LCX16952 MO-118-AB,

    Untitled

    Abstract: No abstract text available
    Text: CY7C340 EPLD Family CYPRESS SEMICONDUCTOR • Erasable, user-configurable CMOS EPLDs capable o f implementing highdensity custom logic functions • 0.8-micron double-metal CMOS EPROM technology CY7C34X • Advanced 0.65-micron CMOS technology to increase performance


    OCR Scan     		PDF CY7C340 CY7C34X) 65-micron CY7C34XB) 1076-compliant CY3340 CY7C341 CY3340F CY3342

    Untitled

    Abstract: No abstract text available
    Text: CD74LCX16543 Semiconductor Fast CMOS 16-Bit Latched Transceiver December 1997 Description Features Advanced 0.6 micron CMOS Technology Harris CD74LCX16543 is produced in an advanced 0.6 micron CMOS technology, achieving industry leading speed grades. 5V Tolerant Inputs and Outputs


    OCR Scan     		PDF CD74LCX16543 16-Bit CD74LCX16543 CD74LCX16543MT 240-P MO-118-AB,

    sensores

    Abstract: memoria
    Text: Procedimientos relativos a la correcta instalación de los SODIMM de Micron Micron Technology es una de las empresas de semiconductores mas innovadoras y eficaces del mundo. Gracias a nuestras operaciones internacionales en Asia, Europa y Norteamérica, fabricamos y


    OCR Scan     		PDF

    5Bp smd transistor data

    Abstract: 5Bp smd TRANSISTOR SMD 2X y CK 158 SMD WL18 TRANSISTOR SMD 2X K 100CLCC cmos based on tanner tools operation of sr latch using nor gates TRANSISTOR SMD 2X 7
    Text: Order this data sheet by HDCM IL/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Military HDC Series HDC Series CMOS Arrays High Performance Triple Layer Metal 1.0 Micron CMOS Arrays Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a


    OCR Scan     		PDF

    MCR 22-8 transistor power

    Abstract: Transistor motorola 418 10146 1987 carrier A022H on 5295 equivalents HDC031 Mustang 300 HDC011 HDC016 HDC049
    Text: Order this data sheet by HDC/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH PERFORMANCE TRIPLE LAYER METAL HDC SERIES CMOS ARRAYS 1.0 MICRON CMOS ARRAYS Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a significant advancement in microchip technology.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC b3E D • GG07b0S T7T ■ URN MT4C4256 L 256K X 4 DRAM MICRON 256K X 4 DRAM DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and


    OCR Scan     		PDF GG07b0S MT4C4256 512-cycle MT4C4256) 175mW MT4C4256L 200nA