UES1102SM
Abstract: No abstract text available
Text: ISCFdÈ1^Us1^Us text/html About News Contact keyword search: UES1102SM #16636 Package Division Scottsdale Datasheet (none) Mil-Spec Shipping (none) TR7\1500cntTR7 Qual Data Contact Microsemi Symbol Max IO 2.5 A Reverse Voltage Vrwm 100 V Max Forward Surge Current
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UES1102SM
100ns)
TR7\1500cntTR7
UES1102SM
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Zener Voltage Regulator
Abstract: voltage regulator diode
Text: 1PMT5918e3/TR7 | Microsemi Quality Careers Investors Contact Us Search Parametric Search Products Applications Design Support Ordering Company Home › Products › Product Directory › Discrete Power And Small Signal Products › Zeners › Zener Voltage Regulator Diode
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1PMT5918e3/TR7
com/en/products/product-directory/311959
Zener Voltage Regulator
voltage regulator diode
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AN-17
Abstract: JESD79 LX1671 LX1672 LX1672-03CLQ LX1673 Si4842DY JESD89A
Text: AN-17 DDR SDRAM Memory Termination AN-17 USING THE LX1672 AND LX1673 FOR DDR SDRAM MEMORY TERMINATION LX1672 Protected by US Patents: 6,285,571 & 6,292,378 I N T E G R A T E D Copyright 2002 Revision 1.2b, 3/8/2006 P R O D U C T S Microsemi Integrated Products
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AN-17
LX1672
LX1673
ESRE181M04B
ESRE271M02B
MCH182CN104KK
GMR219R60J475K
AN-17
JESD79
LX1671
LX1672-03CLQ
LX1673
Si4842DY
JESD89A
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capacitor 2D
Abstract: AN18 LX1671 Si4842DY
Text: LX1671 PRODUCT DESIGN GUIDE AN18 LX1671 PR0DUCT DESIGN GUIDE Protected by US Patents: 6,285,571 & 6,292,378 I N T E G R A T E D Copyright 2000 Rev. 0.2d, 2006-03-08 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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LX1671
LX1671
capacitor 2D
AN18
Si4842DY
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5a2 zener diode
Abstract: AN19 LX1671 LX1672 Si4842DY
Text: LX1672 PRODUCT DESIGN GUIDE AN19 LX1672 PR0DUCT DESIGN GUIDE Protected by US Patents: 6,285,571 & 6,292,378 I N T E G R A T E D Copyright 2000 Rev. 0.2a, 2006-03-08 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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LX1672
LX1672
5a2 zener diode
AN19
LX1671
Si4842DY
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Untitled
Abstract: No abstract text available
Text: WF4M32-XXX5 4Mx32 5V NOR FLASH MODULE FEATURES Access Times of 100, 120, 150ns 5 Volt Read and Write. 5V ± 10% Supply. Packaging: Low Power CMOS • 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP Package 402 . Data# Polling and Toggle Bit feature for detection of
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WF4M32-XXX5
4Mx32
150ns
990CQFJ
502-G4T
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: WF4M32-XXX5 4Mx32 5V NOR FLASH MODULE FEATURES Access Times of 100, 120, 150ns 5 Volt Read and Write Packaging: Low Power CMOS • 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP Package 402 . Data# Polling and Toggle Bit feature for detection of
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WF4M32-XXX5
4Mx32
150ns
990CQFJ
MIL-STD-883
MIL-PRF-38534
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Untitled
Abstract: No abstract text available
Text: WF4M32-XXX5 4Mx32 5V NOR FLASH MODULE FEATURES Access Times of 100, 120, 150ns 5 Volt Read and Write Packaging: Low Power CMOS • 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP Package 402 . Data# Polling and Toggle Bit feature for detection of
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WF4M32-XXX5
4Mx32
150ns
990CQFJ
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Untitled
Abstract: No abstract text available
Text: WMF2M8-XXX5 2Mx8 MONOLITHIC NOR FLASH, SMD 5962-97609 FEATURES Low Power CMOS Data# Polling and Toggle Bit feature for detection of program or erase cycle completion. Access Times of 90, 120, 150ns Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP Package 207 .
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150ns
64KBytes
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Untitled
Abstract: No abstract text available
Text: WMF2M8-XXX5 2Mx8 MONOLITHIC NOR FLASH SMD 5962-97609* FEATURES Low Power CMOS Data# Polling and Toggle Bit feature for detection of program or erase cycle completion. Access Times of 90, 120, 150ns Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP (Package 207).
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150ns
64KBytes
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Untitled
Abstract: No abstract text available
Text: W764M32V1-XBX 256MB – 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The
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W764M32V1-XBX
256MB
64Mx32
W764M32V1-XBX
32-bit
16-bit
1024-byte
fo2013
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Microsemi
Abstract: No abstract text available
Text: W764M32V1-XBX *PRELIMINARY 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The
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W764M32V1-XBX
64Mx32
W764M32V1-XBX
32-bit
16-bit
1024-byte
Microsemi
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W764M32V1-XBX
Abstract: No abstract text available
Text: W764M32V1-XBX *PRELIMINARY 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The
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W764M32V1-XBX
64Mx32
W764M32V1-XBX
32-bit
16-bit
1024-byte
prx32
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Untitled
Abstract: No abstract text available
Text: W764M32V-XSBX Not Recommended for New Designs — Replaced by W764M32V1-XBX 64Mx32 NOR Flash Multi-Chip Package 3.0V Page Mode Flash Memory Hardware features FEATURES Single power supply operation • Advanced Sector Protection • WP#/ACC input accelerates programming time when
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W764M32V-XSBX
W764M32V1-XBX
64Mx32
W764M32V1-XBX"
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Untitled
Abstract: No abstract text available
Text: W7264M32V1-XSBX W7464M32V1-XSBX *ADVANCED 512MB 2 x 64M x 32 / 1GB (4 x 64M x 32) NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION Single power supply operation The W7264M32V1-XSBX device is a 3V single power flash memory and utilizes four chips organized as 67,108,864 words. The
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W7264M32V1-XSBX
W7464M32V1-XSBX
512MB
W7264M32V1-XSBX
W7464M32V1-XSBX
32-bit
16-bit
1024-byte
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Untitled
Abstract: No abstract text available
Text: MS29C4G48MAZAKC1-XX 4Gb NAND FLASH x16 / 2Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.
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MS29C4G48MAZAKC1-XX
MT29C4G48MAZAPACA-XIT"
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Untitled
Abstract: No abstract text available
Text: MS29C4G48MAZAKC1-XX *PRELIMINARY 4Gb NAND FLASH x16 / 2Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.
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MS29C4G48MAZAKC1-XX
MT29C4G48MAZAPACA-XIT"
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Untitled
Abstract: No abstract text available
Text: W78M64VP-XSBX 8Mx64 NOR Flash 3.3V Page Mode Multi-Chip Package FEATURES STANDARD FLASH MEMORY FEATURES Access Times of 110, 120ns The device requires a 3.3 volt power supply for both read and write functions. Internally generated and regulated voltages are provided
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W78M64VP-XSBX
8Mx64
120ns
13x22mm
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Untitled
Abstract: No abstract text available
Text: UM6000 / UM6200/UM6600 POWER PIN DIODES used successfully in switches in which low insertion loss at low bias current is required. The “A” style package for this series is the smallest Microsemi PIN diode package. It has been used successfully in many microwave
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UM6000
UM6200/UM6600
UM6000/UM6200/UM6600
UM6000/UM6200/UM6600
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Untitled
Abstract: No abstract text available
Text: W78M32VP-XBX 8Mx32 NOR Flash 3.3V Page Mode Multi-Chip Package FEATURES GENERAL DESCRIPTION Access Times of 110, 120ns The W78M32VP-XBX is a 256Mb, 3.3 volt-only Page Mode memory device. Packaging The device offers fast page access times allowing high speed
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W78M32VP-XBX
8Mx32
120ns
W78M32VP-XBX
256Mb,
13x22mm
128Kb)
DQ16-31
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UM6606
Abstract: UM6000 UM6600 UM6001 UM6002 UM6006 UM6200 microsemi sm package UM601 UMX6001B
Text: UM6000 / UM6200/UM6600 POWER PIN DIODES KEY FEATURES DESCRIPTION used successfully in switches in which low insertion loss at low bias current is required. The “A” style package for this series is the smallest Microsemi PIN diode package. It has been used successfully in many microwave
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UM6000
UM6200/UM6600
UM6000/UM6200/UM6600
UM6000/UM6200/UM6600
UM6606
UM6600
UM6001
UM6002
UM6006
UM6200
microsemi sm package
UM601
UMX6001B
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transient suppressor
Abstract: DLTS-12 DLTS-12A DLTS-17 DLTS-17A DLTS-24 DLTS-30 IEC61000-4-4 MIL-PRF19500 SA4 marking
Text: DLTS-5 thru DLTS-30 DATA LINE TRANSIENT SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This series of Transient Voltage Suppressor TVS devices is packaged in a ceramic, dual-in-line, hermetically sealed package. These components offer 15 protective devices, unidirectional or bidirectional, common buss
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DLTS-30
SA4-35
transient suppressor
DLTS-12
DLTS-12A
DLTS-17
DLTS-17A
DLTS-24
DLTS-30
IEC61000-4-4
MIL-PRF19500
SA4 marking
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Untitled
Abstract: No abstract text available
Text: DLTS-5 thru DLTS-30 DATA LINE TRANSIENT SUPPRESSOR SCOTTSDALE DIVISION APPEARAN CE This series of Transient Voltage Suppressor TVS devices is packaged in a ceramic, dual-in-line, hermetically sealed package. These components offer 15 protective devices, unidirectional or bidirectional, common buss
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DLTS-30
SA4-35
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u3g diode
Abstract: diode 227j UM-49 Unitrode Semiconductor diode u3g
Text: MICROSEMI CORP/ WATERTOWN 5DE » • TBMTTbB 001E3T0 Tbfl ■ U N I T PIN DIODE U M 4000SERIES UM4900 S E R IE S O 7 - f 5~~ Features • • • • Power dissipation to 37.5W Voltage ratings to 1000V Series resistance rated at 0.5Q Carrier lifetim e greater than 5/us
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OCR Scan
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001E3T0
4000SERIES
UM4900
UM4000
40NC-2
u3g diode
diode 227j
UM-49
Unitrode Semiconductor
diode u3g
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