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    MICROWAVE Search Results

    MICROWAVE Result Highlights (5)

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    ISL55016IRTZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Differential Amplifier Visit Renesas Electronics Corporation
    ISL55014IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation
    ISL55012IEZ-EVAL Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Evaluation Board Visit Renesas Electronics Corporation
    ISL55015IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation
    8V97003NLGI Renesas Electronics Corporation Wideband 18GHz RF and Microwave Synthesizer Visit Renesas Electronics Corporation
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    McGill Microwave Systems Ltd LMR-400-75-DB-TIMES-MICROWAVE

    CABLE COAXIAL LMR-400
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    DigiKey LMR-400-75-DB-TIMES-MICROWAVE 1
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    LMR-400-75-DB-TIMES-MICROWAVE 1
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    Kyocera AVX Components 530L104KT16T

    Silicon RF Capacitors / Thin Film .1UF 16V 10% 0402
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    TTI 530L104KT16T Reel 68,000 500
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    Kyocera AVX Components 600S101JT250XT

    Silicon RF Capacitors / Thin Film 250volts 100pF 5%
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    TTI 600S101JT250XT Reel 57,000 500
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    Kyocera AVX Components 600L100FT200T

    Silicon RF Capacitors / Thin Film 200V 10pF Tol 1%
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    Kyocera AVX Components 600L4R7AT200T

    Silicon RF Capacitors / Thin Film 200V 4.7pF Tol 0.05pF
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    TTI 600L4R7AT200T Reel 19,500 500
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    MICROWAVE Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    10SF8181 Microwave & Video Systems SWITCH / FILTER BANK ASSEMBLY Original PDF
    1-750/200 Microwave Devices Standard Bandwidth Model Original PDF
    1N119 Microwave Diode Germanium Diodes Scan PDF
    1N120 Microwave Diode Germanium Diodes Scan PDF
    1N191 Microwave Diode Germanium Diodes Scan PDF
    1N192 Microwave Diode Germanium Diodes Scan PDF
    1N3831 Microwave Diode Silicon Planar Thyristor Diodes Scan PDF
    1N3831 Microwave Diode (1N3831 - 1N3846) Silicon Planar Thyristor Diodes Scan PDF
    1N3832 Microwave Diode Silicon Planar Thyristor Diodes Scan PDF
    1N3832 Microwave Diode (1N3831 - 1N3846) Silicon Planar Thyristor Diodes Scan PDF
    1N3833 Microwave Diode (1N3831 - 1N3846) Silicon Planar Thyristor Diodes Scan PDF
    1N3833 Microwave Diode Silicon Planar Thyristor Diodes Scan PDF
    1N3834 Microwave Diode Silicon Planar Thyristor Diodes Scan PDF
    1N3834 Microwave Diode (1N3831 - 1N3846) Silicon Planar Thyristor Diodes Scan PDF
    1N3835 Microwave Diode Silicon Planar Thyristor Diodes Scan PDF
    1N3835 Microwave Diode (1N3831 - 1N3846) Silicon Planar Thyristor Diodes Scan PDF
    1N3836 Microwave Diode Silicon Planar Thyristor Diodes Scan PDF
    1N3836 Microwave Diode (1N3831 - 1N3846) Silicon Planar Thyristor Diodes Scan PDF
    1N3837 Microwave Diode Silicon Planar Thyristor Diodes Scan PDF
    1N3837 Microwave Diode (1N3831 - 1N3846) Silicon Planar Thyristor Diodes Scan PDF
    ...

    MICROWAVE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TIM1414-4LA-371

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation


    OCR Scan     		TIM1414-4LA-371 TIM1414-4LA-371 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIRECTIONAL COUPLER .19 MAX IRAK MICROWAVE DIRECTIONAL COUPLER CPL / 1 0 B E - 0 8 SPECIFICATIONS: FREQUENCY LOSS COUPLING VSWR DIRECTIVITY POWER IN O- -O OUT TR4K MICROWAVE MATERIAL □ STANDARD □ SPECIAL • » o • BASE COVER MARKING FINISH FR— 4 VECTRA


    OCR Scan     		PL/10B PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000


    OCR Scan     		TIM0910-15L 30dBm 145mA 2-11C1B) PDF

    POUT315

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc a t Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single C arrier Level BROAD BAND INTERNALLY MATCHED


    OCR Scan     		-45dBc TIM5964-16SL-081 2-16G1B) POUT315 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		TIM7179-4 MW50970196 TIM7179-4 PDF

    TGF1350

    Abstract: No abstract text available
    Text: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation


    OCR Scan     		TGF1350 TGF1350 PDF

    2SC1557

    Abstract: L39C cub vc 150
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO tpwjimm/fmm L 39C 0 0 4 8 9 Ü T ^ 3 / '2 3 - -If O O VHP , L’HP^CATVffl ° Microwave High Power Amplifier Applications ° VHP, II HP Band CATV Applications MAXIMUM RATINGS (Ta =25°C) CHARACTERISE C


    OCR Scan     		2SC1557 2SC1557 L39C cub vc 150 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz


    OCR Scan     		TIM5964-8SL TIM5964-8SL MW50750196 PDF

    Untitled

    Abstract: No abstract text available
    Text: Texas Instruments Microwave Military Components TGM8014 Carrier Plate Assembly Product Features • 0.6-watt average output power at 1-dB gain compression ■ 6 to 18 GHz bandwidth ■ Automated assembly ■ Selectable gate biasing ■ 100% RF screening Product Description


    OCR Scan     		TGM8014 TGA8014 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM1414-4 MW50280196 PDF

    Untitled

    Abstract: No abstract text available
    Text: TRKMS037 *T R K M S 0 3 7 * l/Q - .0 2 5 .18 MAX MODULATOR STYLE - 0 9 PACKAGE TRAK MICROWAVE l/Q SPECIFICATIONS MODULATOR LO FREQUENCY LO POWER LEVEL M IQ /3 F F - 0 9 C INSERTION LOSS l/Q l/Q RATE LEVEL 1.8 - 2 .0 GHz + 10 dBm MAX 10 dB MAX DC - 10 MHz


    OCR Scan     		TRKMS037 /3FF--09C PDF

    Untitled

    Abstract: No abstract text available
    Text: h- .5 0 -H .2 5 0 r 1 .075 — .19 7 .0 5 5 I F □ □ □ .031 — r Î •lo .38 I HIGH DYNAMIC RANGE DOUBLE BALANCED MIXER h-— -19 MAX —- - T .3 5 1 TRAK MICROWAVE RF MIXER $ M X R /3 C F -0 2 H D SPECIFICATIONS: IF OPERATING FREQUENCY


    OCR Scan     		MXR/3CF-02HD PDF

    Untitled

    Abstract: No abstract text available
    Text: u 1J POWER SPLITTER .19 MAX 7 1 TRAK MICROWAVE POWER SPLITTER .3 5 S P L /2 E F - 0 1 / 7 5 SPECIFICATIONS: FREQUENCY LOSS VSWR AMP BALANCE PHASE BALANCE ISOLATION POWER IMPEDANCE 5 0 0 - 2 0 0 0 MHz 0 .8 dB TYP, 2 .0 dB MAX 1.5:1 MAX ± 0 .1 dB TYP, ± 0 .3 dB MAX


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power • P-idB = 44.5 dBm at 1.8 GHz • High gain - G idB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)


    OCR Scan     		TPM1818-30 2-16G1B) MW40020196 PDF

    ely transformers

    Abstract: No abstract text available
    Text: Monolithic-Microwave Integrated Circuits BACKGROUND T l's M icrow ave Military Components M M C organization was created to produce Gallium Arsenide (GaAs) Monolithic M icrowave Integrated Circuits (M M ICs), and to integrate the broad range of technologies available at Texas Instruments.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r


    OCR Scan     		TIM7785-16SL MW51130196 TIM7785-16SL PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39.5 dBm at 5.9 GHz to 6.4 GHz • High gain - G 1dB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		TIM5964-8A 2-11D1B) at260 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 6.0 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package


    OCR Scan     		TIM1415-2 MW50390196 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 5.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		TIM7785-16 TIM7785-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -43 d B c at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.1 GHz to 7.9 GHz


    OCR Scan     		TIM7179-7L MW50980196 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB


    OCR Scan     		28dBm JS9P05-AS 38GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 7.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM1011-5 MW50110196 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-15L RF Performance Specifications Ta = 25°C Characteristic Symbol Output Power at 1 dB Compression Point P 1dB Power Gain at 1dB Compression Point G 1dB Condition Unit Min. Typ. Max. dBm 41.0 42.0 - dB 6.0 7.0 -


    OCR Scan     		TIM1011-15L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM1112-4 MW50190196 PDF