WATKINS JOHNSON mixer
Abstract: vari-l 1785 TETRA etch magnum microwave Magnum Microwave mixer BD256 WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
Text: There is a new leader and source for your RF & microwave systems and components … Spectrum Microwave. Combining the people, products and technologies from FSY Microwave, Salisbury Engineering, Q-Bit, Magnum Microwave, Radian Technologies and Amplifonix into a single
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Fuse m1 250C
Abstract: SIEMENS b43471 B43991 SIEMENS b43405 B43876 B43875 m1 250c fuse B41684 epcos B43991 B43405
Text: Microwave Ceramics and Modules RF LTCC Filter for ISM 2.4 GHz Filter B69893K2457C101 Preliminary datasheet Features • Low Profile maximum height 0.9 mm Change History Revision Detail of change P1 First release Date 09.06.06 Author Stadler Contents Page 2
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B69893K2457C101
2002/95/EC
2005/747/EC
Fuse m1 250C
SIEMENS b43471
B43991
SIEMENS b43405
B43876
B43875
m1 250c fuse
B41684
epcos B43991
B43405
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NJG1608
Abstract: NJG1608KB2
Text: NJG1608KB2 SPDT SWITCH GaAs MMIC ! GENERAL DESCRIPTION The NJG1608KB2 is a SPDT switch IC featured low insertion loss, medium handling power and high isolation. The NJG1608KB2 is suitable for switching of Tx/Rx signals at sub-microwave applications. The NJG1608KB2
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NJG1608KB2
NJG1608KB2
100MHz
25dBm
85GHz
NJG1608
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NJG1666MD7
Abstract: FR4 substrate 1.6mm
Text: NJG1666MD7 SPDT SWITCH GaAs MMIC ! GENERAL DESCRIPTION ! PACKAGE OUTLINE The NJG1666MD7 is a GaAs SPDT switch designed for Set-top boxes, TV tuners, CATV tuners, and sub-microwave applications. The NJG1666MD7 features high isolation, low insertion loss and covering a broad frequency
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NJG1666MD7
NJG1666MD7
NJG1666MD7operates
14-pin
EQFN14-D7
FR4 substrate 1.6mm
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Untitled
Abstract: No abstract text available
Text: NJG1612HA8 SPDT Switch GaAs MMIC Q GENERAL DESCRIPTION NJG1612HA8 is a SPDT switch IC featured extremely high speed switching. This device is suitable for high speed switching of Tx/Rx signals at sub-microwave applications. This switch exhibits wide frequency range from 100MHz
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NJG1612HA8
NJG1612HA8
100MHz
20dBm
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NJG1612HA8
Abstract: No abstract text available
Text: NJG1612HA8 SPDT Switch GaAs MMIC ! GENERAL DESCRIPTION The NJG1612HA8 is a SPDT switch IC featured extremely high speed switching. This device is suitable for high speed switching of Tx/Rx signals at sub-microwave applications. This switch exhibits wide frequency range from 100MHz
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NJG1612HA8
NJG1612HA8
100MHz
20dBm
25dBm
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NJG1666MD7
Abstract: FR4 substrate 1.6mm
Text: NJG1666MD7 SPDT SWITCH GaAs MMIC ! GENERAL DESCRIPTION ! PACKAGE OUTLINE The NJG1666MD7 is a GaAs SPDT switch designed for Set-top boxes, TV tuners, CATV tuners, and sub-microwave applications. The NJG1666MD7 features high isolation, low insertion loss and covering a broad frequency
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NJG1666MD7
NJG1666MD7
NJG1666MD7operates
14-pin
EQFN14-D7
FR4 substrate 1.6mm
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Untitled
Abstract: No abstract text available
Text: NJG1650HB6 SP3T SWITCH GaAs MMIC ! GENERAL DESCRIPTION NJG1650HB6 is a SP3T switch IC featured low insertion loss, high isolation and small size package. This switch is suitable for W-LAN, Bluetooth, and sub-microwave applications. A small and thin package of USB8-B6 is adopted.
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NJG1650HB6
NJG1650HB6
23dBm,
28dBm
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Untitled
Abstract: No abstract text available
Text: NJG1612HA8 SPDT Switch GaAs MMIC GENERAL DESCRIPTION The NJG1612HA8 is a SPDT switch IC featured extremely high speed switching. This device is suitable for high speed switching of Tx/Rx signals at sub-microwave applications. This switch exhibits wide frequency range from 100MHz
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NJG1612HA8
NJG1612HA8
100MHz
20dBm
25dBm
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NJG1649
Abstract: NJG1649HB6 FR4 substrate 10GHz
Text: NJG1649HB6 SPDT SWITCH GaAs MMIC Q GENERAL DESCRIPTION NJG1649HB6 is a GaAs SPDT switch IC suited for W-LAN, Bluetooth and sub-microwave applications. This device can operate a single bit control signal from +1.3V. The ultra-small & ultra-thin USB8-B6 package is adopted.
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NJG1649HB6
NJG1649HB6
23dBm,
30dBm
NJG1649
FR4 substrate 10GHz
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NJG1650
Abstract: NJG1650HB6 NJG1650HB
Text: NJG1650HB6 SP3T SWITCH GaAs MMIC ! GENERAL DESCRIPTION NJG1650HB6 is a SP3T switch IC featured low insertion loss, high isolation and small size package. This switch is suitable for W-LAN, Bluetooth, and sub-microwave applications. A small and thin package of USB8-B6 is adopted.
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NJG1650HB6
NJG1650HB6
23dBm,
28dBm
NJG1650
NJG1650HB
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capacitor 27pf
Abstract: NJG1615HA8
Text: NJG1615HA8 SPDT SWITCH GaAs MMIC Q GENERAL DESCRIPTION NJG1615HA8 is a SPDT switch IC featured low insertion loss, medium handling power and high isolation. This device is suitable for switching of Tx/Rx signals at sub-microwave applications. This switch exhibits wide frequency range from 100MHz
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NJG1615HA8
100MHz
25dBm
23dBm
85GHz,
20dBm
30dBm
capacitor 27pf
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MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
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28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
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CGY2030M
Abstract: SSOP16 SSOP20 footprint ssop16
Text: Philips Semiconductors Product specification DECT 500 mW power amplifier CGY2030M FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 40% The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically
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SSOP16
CGY2030M
CGY2030M
SSOP20
footprint ssop16
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irf 652
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 50% (DCS) The CGY2021G is a DCS/PCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier
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48-pin
PCA5077
UBA1710.
CGY2021G
CGY2021G
irf 652
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CGY2030M
Abstract: DCS1800 SSOP16 SSOP20
Text: Philips Semiconductors Objective specification DECT 0.6 W power amplifier CGY2030M FEATURES GENERAL DESCRIPTION • 3.3 V supply voltage operation The CGY2030M is a GaAs monolithic microwave 600 mW power amplifier designed for a 3.3 V supply voltage. When
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SSOP16
DCS1800
CGY2030M
CGY2030M
711Dfi2b
SSOP20
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FLL105
Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
Text: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ
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FLL300-1
FLL200-1
FLL300-2
FLL200-3
FLL200-2
FLL120
FLL105
FLL300-3
FLU35
FLL55
FLL105
FLL101
fll171
"FLL105"
FLL-300-1
FLK202
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1N5411
Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal
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CON-46
O-104
14-Lead
16-Lead
12-Lead
16-Lead
O-220AB
1N5411
npn transistor RCA 467
CD4004T
CA3051
CD4001D
40468A
RCA 40822
40664 SCR
rca 40583
2N5756
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LQFP-48 footprint
Abstract: schematics for a PA amplifier class c 7x7x1.4 n004 schematics for a PA amplifier 27 Mhz power amplifier power amplifier 33PF C5000 CGY2010G
Text: Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% • Integrated power sensor driver The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power
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PCA5075
SA1620.
CGY2010G;
CGY2011G
CGY2010G
CGY2011G
LQFP-48 footprint
schematics for a PA amplifier class c
7x7x1.4
n004
schematics for a PA amplifier
27 Mhz power amplifier
power amplifier
33PF
C5000
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CGY2013G
Abstract: LQFP48 PCA5075 SA1620 SMD0603
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.
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CGY2013G
PCA5075
SA1620.
CGY2013G
711032t
010b027
LQFP48
PCA5075
SA1620
SMD0603
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CGY2023G
Abstract: LQFP48 LQFP64 LQFP80 PCA5075
Text: Philips Semiconductors Objective specification DCS 2 W power amplifier CGY2023G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 38% The CGY2023G is a DCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.
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CGY2023G
PCA5075.
CGY2023G
711002b
10703t
LQFP48
LQFP64
LQFP80
PCA5075
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avantek microwave
Abstract: Avantek amplifier 220-1 AVANTEK dba 167 MSA-0900 MSA-0900-GP2 MSA-0900-GP4 MSA-0900-GP6 AN-S009
Text: data sheet 3EC 1 1990 O avan tek MSA-0900 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers January, 1990 Features • Broadband, Minimum Ripple Cascadable 50 Q Gain Block • 8.0 ± 0.2 dB typical Gain Flatness from 0.1 to 4.0 GHz
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MSA-0900
MSA-0900
avantek microwave
Avantek amplifier 220-1
AVANTEK dba 167
MSA-0900-GP2
MSA-0900-GP4
MSA-0900-GP6
AN-S009
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CGY2020G
Abstract: LQFP48 LQFP64 LQFP80 PCA5075 SMD0603 nrx 34
Text: Philips Semiconductors Objective specification DCS 2 W power amplifier CGY2020G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 42% The CGY2020G is a DCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 4.8 V battery supply.
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CGY2020G
PCA5075.
CGY2020G
711062b
0l0b037
LQFP48
LQFP64
LQFP80
PCA5075
SMD0603
nrx 34
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MSA-1100-GP4
Abstract: avantek microwave MSA-1100 MSA-1100-GP2 MSA-1100-GP6 modamp
Text: data sheet OEC Q avantek MSA-1100 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers January, 1990 Avantek Chip Outline1 Features • • • • • High Dynamic Range Cascadable 50 Q or 75 i2 Gain Block 3 dB Bandwidth: 50 MHz to 1.6 GHz
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MSA-1100
MSA-1100
MSA-1100-GP4
avantek microwave
MSA-1100-GP2
MSA-1100-GP6
modamp
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