WATKINS JOHNSON mixer
Abstract: vari-l 1785 TETRA etch magnum microwave Magnum Microwave mixer BD256 WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
Text: There is a new leader and source for your RF & microwave systems and components … Spectrum Microwave. Combining the people, products and technologies from FSY Microwave, Salisbury Engineering, Q-Bit, Magnum Microwave, Radian Technologies and Amplifonix into a single
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6647a
Abstract: 2082-2700-00 560-7A50 attenuator 3dB DC 18GHz wiltron 6647A Microwave Generator SWR BRIDGE metal detector vlf HP-85
Text: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line
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6647a
Abstract: uhf microwave fet 560-7A50 Logarithmic Amplifier detector 18GHz metal detector vlf 2082-2700-00 2082-2700 7082 coil gold detector decibel meter
Text: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line
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560-7A50
Abstract: 6647a Shielded Microstrip uhf microwave fet 2082-2700-00 7082 coil gold detector decibel meter Logarithmic Amplifier detector 18GHz series and parallel resonance
Text: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line
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microwave transistor bfy193
Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG
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MWP-25
MWP-35
microwave transistor bfy193
BFY193
Micro-X marking "Fp"
GaAs Amplifier Micro-X Marking k
BAS40
BFY180
BFY405
BXY42
CFY25
micro-x 420
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SIEMENS MICROWAVE RADIO 8 GHz
Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG
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MWP-25
MWP-35
SIEMENS MICROWAVE RADIO 8 GHz
gaas fet micro-X Package marking
BAS70B-HP
x-band power transistor
x-band mmic lna
CGY40
MMIC Amplifier Micro-X marking D
MSC Microwave
gaas fet micro-X Package
INFINEON PART MARKING
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
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switches
Abstract: anzac mixers GAAS FET CROSS REFERENCE GAAS FET rf switch CROSS REFERENCE PIN DIODE DRIVER CIRCUITS PIN DIODE SPDT DRIVER CIRCUITS semiconductors cross reference TWD5032 Microwave PIN diode ANZAC CROSS REFERENCE
Text: RF & Microwave Switches Exceeding Expectations Spectrum Microwave, a leader in RF Component design, continues this rich microwave heritage with its line-up of broadband, high isolation switches. We believe that designing switches which exceed customer expectations
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AC2092
Abstract: AC2091 M1-0412ME M1-0420ME UTO507 TL9014 M1_0412ME AC545 GPD462 AVANTEK utc5
Text: Teledyne / Cougar Cross Reference List Cougar SPECTRUM MICROWAVE Cougar SPECTRUM MICROWAVE Cougar SPECTRUM MICROWAVE AC105 ACH107 AP148 AC251 AC262 AC263 AC271 AC272 AC273 AC281 AC282 AC293 AP294 AC305 AC345 AC347 AP348 AR356 AC378 AC379 AC380 AC381 AC382
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AC105
ACH107
AP148
AC251
AC262
AC263
AC271
AC272
AC273
AC281
AC2092
AC2091
M1-0412ME
M1-0420ME
UTO507
TL9014
M1_0412ME
AC545
GPD462
AVANTEK utc5
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mobile phone basic block diagram
Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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G0706
PX10020EJ41V0PF
mobile phone basic block diagram
PG2158T5K
2SC3357/NE85634
microwave Duplexer
NE5510279A
UPC8236
NE3517S03
UPG2156
NE662M04
SW SPDT
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1658 NEC
Abstract: SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D
Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2003 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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PX10020EJ08V0PF
1658 NEC
SW SPDT
FRS transceiver
SW-SPDT
upc8112tb
2SC5288
NE52418
RF basics
NE5510279A
discrete LNA D
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UPC8236
Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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G0706
PX10020EJ39V0PF
UPC8236
2SC5508
NE3512S02
digital tv tuner
hjfet
NESG240033
SW SPDT
NE5510279A
antenna for microwave CATV materials
ANTENNA parabolic
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371 fet
Abstract: TIM1414-4LA-371
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation
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TIM1414-4LA-371
371 fet
TIM1414-4LA-371
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TIM1414-4LA-371
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation
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TIM1414-4LA-371
TIM1414-4LA-371
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MwT GaAs Device Technology
Abstract: Gunn Diode gunn effect fet dro 10 ghz system on chip x-band x-band dro
Text: MicroWave Technology, Inc. GENERAL INFORMATION MwT’s GaAs Device Technology MicroWave Technology Inc. was established in 1982 by two senior technologists with years of hands-on experiences in Gallium Arsenide GaAs epitaxial material growth and microwave device design and processes.
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Untitled
Abstract: No abstract text available
Text: Microwave Switch SP4T Broadband GaAs RF / Microwave Switch 1-10533 Frequency 10 MHz to 3 GHz Low Insertion Loss Fast Switching Integral TTL Drivers Temperature Range -40 to +85ºC The Pascall SP4T Broadband RF / Microwave Switch, first of a new series, uses
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high power fet amplifier schematic
Abstract: GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal
Text: Application of Loadline Simulation to Microwave High Power Amplifiers Edward L. Griffin Abstract Loadline theory is described as applied to high power microwave amplifiers. An example design with simulation is presented. Introduction The design of microwave GaAs high power amplifiers HPAs to demanding
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30FETs
20FETs
12-Watt
high power fet amplifier schematic
GaAs MESFET amplifier
fet amplifier schematic
x-band mmic core chip
MMIC X-band amplifier
x-band microwave fet
HPA Ku
x-band core chip
"high power microwave"
fet small signal
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S9G66A
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET N on-M atched MICROWAVE SEMICONDUCTOR S9G66A Preliminary TECHNICAL DATA SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL PldB
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S9G66A
S9G66A
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Untitled
Abstract: No abstract text available
Text: Microwave Switch SP4T Broadband GaAs RF / Microwave Switch 1-10533 Frequency 10 MHz to 3 GHz Low Insertion Loss Fast Switching Integral TTL Drivers Temperature Range -40 to +85ºC The Pascall SP4T Broadband RF / Microwave Switch, first of a new series, uses
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GaAs FET amplifer
Abstract: AW1218301N AW612304 AP45401 ph01 AL26501 AL618801 AW218201N AW26204 AW26201N
Text: MicroWave Technology, Inc. MICROWAVE AMPLIFIERS Standard Amplifier Capability MicroWave Technology, Inc. has been a leading manufacturer of high performance amplifiers since it was founded in 1982. MwT’s principal strengths are derived from an in-house quarter micron Gallium Arsenide device
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PH-01
GaAs FET amplifer
AW1218301N
AW612304
AP45401
ph01
AL26501
AL618801
AW218201N
AW26204
AW26201N
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Untitled
Abstract: No abstract text available
Text: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET Non-Matched S9666A Preliminary 1. RF PERFORMANCE SPECIFICATIONS Ta= 25° C Ì CHARACTERISTICS Output Power at IdB Compression Point Power Gain at IdB Compression Point Drain Current
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S9666A
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TPM2323-60
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TPM2323-60 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=48.0dBm at 2.4GHz HIGH GAIN G1dB=10.0dB at 2.4GHz PARTIALLY MATCHED TYPE HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS
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TPM2323-60
300mA
IDS12
IDS12A
TPM2323-60
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S9G08A
Abstract: 2-16G6A
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S9G08A TECHNICAL DATA FEATURES LOW DISTORTION PARTIALLY MATCHED TYPE HIGH GAIN G idB = 13 dB HERMETICALLY SEALED PACKAGE Padj = -74 dBc@ Po = 38 dBm RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS
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S9G08A
38dBm,
600kHz
S9G08A
2-16G6A
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