MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT Search Results

MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT Result Highlights (5)

Part	Manufacturer	Description
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0508MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1S0512MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN

MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PH1819-45 Abstract: DSAE001132 Text: PH1819-45 Wireless Bipolar Power Transistor 45W, 1805-1880 MHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching	Original	PH1819-45 PH1819-45 DSAE001132	PDF
PH192 Abstract: PH1920-45 27J5 Text: PH1920-45 Wireless Bipolar Power Transistor 45W, 1930-1990 MHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • NPN silicon microwave power transistor Common emitter class AB operation Internal input and output impedance matching	Original	PH1920-45 PH192 PH1920-45 27J5	PDF
Untitled Abstract: No abstract text available Text: PH1920-33 Wireless Bipolar Power Transistor 33W, 1930-1900 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter class AB operation Internal input and output impedance matching	Original	PH1920-33	PDF
PH1920-33 Abstract: No abstract text available Text: PH1920-33 Wireless Bipolar Power Transistor 33W, 1930-1900 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter class AB operation Internal input and output impedance matching	Original	PH1920-33 PH1920-33	PDF
33w NPN Abstract: Pacific Wireless PH1819-33 Text: PH1819-33 Wireless Bipolar Power Transistor 33W, 1805-1880 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching	Original	PH1819-33 33w NPN Pacific Wireless PH1819-33	PDF
Untitled Abstract: No abstract text available Text: PH1819-33 Wireless Bipolar Power Transistor 33W, 1805-1880 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching	Original	PH1819-33	PDF
jfet matching fixture Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT NMOS MODEL PARAMETERS SPICE RF Power Transistor spice AN002 ZERO Bias diode "RF MOSFETs" NMOS depletion pspice model depletion MOSFET SPICE AN001 Text: A tiIxK APPLICATION NOTE #AN001 REV 07/15/91 MICROW AVE POW ER TRANSISTOR IMPEDANCE MEASUREMENT M m /a - c o m p h i , in c . Introduction Calibration The required input and output impedances for M /A-COM PHI microwave power transistors are specified as Z if and Z of respectively. Z if is the test	OCR Scan	AN001 jfet matching fixture MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT NMOS MODEL PARAMETERS SPICE RF Power Transistor spice AN002 ZERO Bias diode "RF MOSFETs" NMOS depletion pspice model depletion MOSFET SPICE	PDF
2n3478 Abstract: RF Transistor s-parameter Text: Test & Measurement Application Note 95-1 H S-Parameter Techniques for Faster, More Accurate Network Design http://www.hp.com/go/tmappnotes H Contents 1. Foreword and Introduction 2. Two-Port Network Theory 3. Using S-Parameters 4. Network Calculations with Scattering Parameters	Original		PDF
BLS2731-10 Abstract: AN98029 broadband impedance transformation Text: APPLICATION NOTE Broadband impedance matching for S-Band Transistors AN98029 Philips Semiconductors Broadband impedance matching for S-Band Transistors CONTENTS 1 INTRODUCTION 2 DESIGN METHOD 3 IMPEDANCE MEASUREMENT 4 FITTING DATA TO MODEL 5 LUMPED ELEMENT INPUT AND OUTPUT	Original	AN98029 SCA57 BLS2731-10 AN98029 broadband impedance transformation	PDF
"Phase Discriminator" Abstract: AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study Text: AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS M. Deiss - R. Marley 1. ABSTRACT The continuing efforts to design and produce phased array radar systems have resulted in an increased need for relative insertion phase length data on individual microwave power transistors. The inclusion of	Original	AN569 "Phase Discriminator" AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study	PDF
"Phase Discriminator" Abstract: Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor Text: AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS M. Deiss - R. Marley 1. ABSTRACT The continuing efforts to design and produce phased array radar systems have resulted in an increased need for relative insertion phase length data on individual microwave power transistors. The inclusion of	Original	AN569 "Phase Discriminator" Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor	PDF
AN569 Abstract: coupler s-band high power N6226982-L-0384 all transistor datasheet Hewlett-Packard transistor microwave all transistor AM81214-060 AM82731-050 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study Text: AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS M. Deiss - R. Marley 1. ABSTRACT The continuing efforts to design and produce phased array radar systems have resulted in an increased need for relative insertion phase length data on individual microwave power transistors. The inclusion of	Original	AN569 AN569 coupler s-band high power N6226982-L-0384 all transistor datasheet Hewlett-Packard transistor microwave all transistor AM81214-060 AM82731-050 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study	PDF
Y parameters of transistors Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .	Original	MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor	PDF
CGH40010 Large Signal Model Abstract: CGH40010 microwave office Cree Microwave Text: PIERS ONLINE, VOL. 6, NO. 2, 2010 141 Design of a Class F Power Amplifier Tian He1 and Uma Balaji2 1 California State University Chico, Chico, CA 95926, USA Farmingdale State College, Farmingdale, NY 11735, USA 2 Abstract— A Class F power amplifier PA at 2.5 GHz has been designed and fabricated. Test	Original		PDF

LMX2215 Abstract: HP8757 LMX2216B gilbert cell sum AN-884 C1995 Basics on Radars ge-2 transistor noise diode generator Self-Oscillating mixer Text: National Semiconductor Application Note 884 A Dao April 1993 ABSTRACT Basic theory and operation of low noise amplifiers and mixers are presented Important figures of merits of these two devices such as gain noise figure compression point and third order intercept point are introduced and derived Measurement methods of these figures of merit are also described	Original	20-3A LMX2215 HP8757 LMX2216B gilbert cell sum AN-884 C1995 Basics on Radars ge-2 transistor noise diode generator Self-Oscillating mixer	PDF
MRF873 Abstract: j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors Text: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE RF Power Device Impedances: Practical Considerations AN1526 Prepared by: Alan Wood and Bob Davidson Motorola Semiconductor Products Sector ABSTRACT The definition of large–signal series equivalent input and	Original	AN1526/D AN1526 AN1526/D* MRF873 j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors	PDF
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF873 motorola an282 application RF TRANSISTOR 2.5 GHZ s parameter Theory of Modern Electronic Semiconductor Device Motorola Power Transistor Data Book J102 fet uhf microwave fet 2 watt rf transistor Text: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE AN1526 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. RF Power Device Impedances: Practical Considerations Prepared by: Alan Wood and Bob Davidson	Original	AN1526/D AN1526 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF873 motorola an282 application RF TRANSISTOR 2.5 GHZ s parameter Theory of Modern Electronic Semiconductor Device Motorola Power Transistor Data Book J102 fet uhf microwave fet 2 watt rf transistor	PDF
MRF873 Abstract: motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP motorola an282 application MRF650 motorola rf Power Transistor Data Book schematic diagram 800 watt power amplifier TRANSISTOR D 1978 AN1526 Theory of Modern Electronic Semiconductor Device broad-band Microwave Class-C Transistor Amplifiers Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1526/D AN1526 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. RF Power Device Impedances:	Original	AN1526/D AN1526 MRF873 motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP motorola an282 application MRF650 motorola rf Power Transistor Data Book schematic diagram 800 watt power amplifier TRANSISTOR D 1978 AN1526 Theory of Modern Electronic Semiconductor Device broad-band Microwave Class-C Transistor Amplifiers	PDF
Avantek yig Abstract: yig oscillator hp AVANTEK YIG tuned oscillator AVANTEK, yig yig oscillator avantek avantek yig oscillator avantek YTO HP yig oscillator YIG Bandpass Filters yig band filter Text: Glossary Terms and Definitions Cascade Aluminum Oxide, Al203 — Alumina ceramic is used as the substrate material on which is deposited thin conductive and resistive layers for thinfilm microwave integrated circuits. A series of microwave amplifier stages connected	Original	Al203) Avantek yig yig oscillator hp AVANTEK YIG tuned oscillator AVANTEK, yig yig oscillator avantek avantek yig oscillator avantek YTO HP yig oscillator YIG Bandpass Filters yig band filter	PDF
microwave transistor siemens bfp 420 Abstract: 4144 lH21l BFP450 siemens MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT doppler radar SMX-1 BFP450 transistor s parameters noise sot-343 as Text: APPLICATIONS DISCRETE SEMICONDUCTORS Jakob Huber ● Gerhard Lohninger RF measurements on SIEGET bipolar transistors: Predicting performance straight from the wafer Multistage measurements are intended to ensure unrestricted operation of RF transistors. But until recently,	Original		PDF
transistor s11 s12 s21 s22 Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21 Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	5091-8350E 5968-1411E transistor s11 s12 s21 s22 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21	PDF
high power FET transistor s-parameters Abstract: transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1 Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Agilent Technologies High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	5091-8350E 5968-1411E high power FET transistor s-parameters transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1	PDF
RF transistors with s-parameters Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	5091-8350E 5968-1411E RF transistors with s-parameters MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave	PDF
RF Transistor s-parameter Abstract: AN-60-040 8971C TRANSISTOR SAV 17 padmanabha SAV-581 RF transistors with s-parameters noise source diode kelvin 1102 NF50 Text: UNDERSTANDING NOISE PARAMETER MEASUREMENTS AN-60-040 Overview This application note reviews noise theory & measurements and S-parameter measurements used to characterize transistors and amplifiers at Modelithics, Inc. Definitions and Theory The formulations in this note were derived from multiple sources, including References [1-3].	Original	AN-60-040) 10log AN-60-040 M123981 AN60040 RF Transistor s-parameter 8971C TRANSISTOR SAV 17 padmanabha SAV-581 RF transistors with s-parameters noise source diode kelvin 1102 NF50	PDF

MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT Search Results

MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT Result Highlights (5)

MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT Datasheets Context Search

PH1819-45

PH192

Untitled

PH1920-33

33w NPN

Untitled

jfet matching fixture

2n3478

BLS2731-10

"Phase Discriminator"

"Phase Discriminator"

AN569

Y parameters of transistors

CGH40010 Large Signal Model

LMX2215

MRF873

2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

MRF873

Avantek yig

microwave transistor siemens bfp 420

transistor s11 s12 s21 s22

high power FET transistor s-parameters

RF transistors with s-parameters

RF Transistor s-parameter