ATP10K100M
Abstract: 100w1000 Amplifier Research LA250
Text: 1st Half of 2014 The Complete Catalog For RF & EMC Testing RF Solid State Power Amplifiers Microwave Solid State and TWT Power Amplifiers MultiStar Multi-Tone Tester MultiStar Field Analyzers MultiStar Precision DSP Receiver RF and Microwave Antennas rf/microwave instrumentation
|
Original
|
250T1G3,
200T2G8A
250T8G18
January/3500
ATP10K100M
100w1000
Amplifier Research LA250
|
PDF
|
MBG-1026
Abstract: m7420A m7437 MBG-1025 MBG-1156 MBG-1014 MBG-1141 MBG-1126 MBG-1154 MBG-1152
Text: "!73 the complete microwave solution BAW Delay Lines Teledyne’s Bulk Acoustic Wave BAW Product Line has been producing BAW delay devices since the early 1960’s. Over the years, Teledyne Microwave has constantly improved BAW technology and is currently the world’s only supplier of microwave bulk acoustic wave delay devices.
|
Original
|
MBI-1021
MBJ-1007A
MBI-1086
MBJ-1010
MBI-1109
MBJ-1018
MBI-1110
MBJ-1009
MBI-1110A
MBJ-1003
MBG-1026
m7420A
m7437
MBG-1025
MBG-1156
MBG-1014
MBG-1141
MBG-1126
MBG-1154
MBG-1152
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Higher Level of Performance Data Sheet G1 Microwave Switch Series Auto Spray Cleaner For more information, please visit > www.hawkmeasure.com > Overview Auto Spray Cleaner Sultan G1 Microwave AcousticSwitch Wave Series Series User Guide Concept Terminology Reference & Details
|
Original
|
200ml
|
PDF
|
piezoelectric crystals
Abstract: microwave transducer dispersive saw dispersive filter
Text: Spectrum Microwave White Paper January 2010 Specifying the Proper SAW Filter Spectrum Microwave offers a wide range of high-quality standard and custom SAW filter product solutions, designed and manufactured utilizing state of the art semiconductor fabrication
|
Original
|
|
PDF
|
westcode scr
Abstract: toko filters westcode diodes TOKO INDUCTORS tyco igbt mitsubishi sic MOSFET KU SERIES CHEMICON capacitor nujira NATIONAL IGBT welding transformer SCR
Text: 90461431 RF, Microwave Components Your Global Source for RF, Microwave and Power Conversion Products Our valued suppliers Click on the supplier name below to visit their storefront on www.rell.com Richardson Electronics’ RF, Wireless & Power Division designs and distributes
|
Original
|
G15000CR
MK100104
westcode scr
toko filters
westcode diodes
TOKO INDUCTORS
tyco igbt
mitsubishi sic MOSFET
KU SERIES CHEMICON capacitor
nujira
NATIONAL IGBT
welding transformer SCR
|
PDF
|
Ericsson microwave antenna 0.6
Abstract: ericsson PARABOLIC antenna
Text: MICROWAVE : PARABOLIC RADIO RELAY ANTENNAS PARABOLIC RADIO RELAY ANTENNAS Box 22 04401 Järvenpää Finland Tel. +358 9 2790 120 Fax +358 9 2910 210 http://www.aerial.fi [email protected] MICROWAVE : PARABOLIC RADIO RELAY ANTENNAS Table of contents Introduction
|
Original
|
AU300-XXR/XXRD)
AU600-XXR/XXRD)
AU850-XXR/XXRD)
AU1200-XXR/XXRD)
AU1800-XXR/XXRD)
AU2400-XXR/XXRD)
AU3000-XXR/XXRD)
FI01263910
Ericsson microwave antenna 0.6
ericsson PARABOLIC antenna
|
PDF
|
BFY193C
Abstract: No abstract text available
Text: BFY193C HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Specified 1/f Noise Hermetically sealed microwave package 4 3 1 2
|
Original
|
BFY193C
BFY193C
|
PDF
|
BFY182
Abstract: No abstract text available
Text: BFY182 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • Hermetically sealed microwave package • fT = 8GHz F = 2.4dB at 2GHz • esa Space Qualified
|
Original
|
BFY182
BFY182
|
PDF
|
BFY182
Abstract: No abstract text available
Text: BFY182 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz •
|
Original
|
BFY182
Q62702F1608
QS9000
BFY182
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • • fT= 6,5 GHz F = 3 dB at 2 GHz 4
|
Original
|
BFY196
BFY196
Q62702F1684
QS9000
|
PDF
|
motion sensor doppler
Abstract: microwave transmitter 10GHz microwave motion sensors knock alarm doppler sensor microwave motion sensor microwave proximity sensor doppler microwave transceiver microwave transceiver water flow doppler
Text: A higher level of performance Data Sheet Microwave Smart Switch Series - Beam blockage detection - Doppler movement / Solid flow detection Principle of Operation Beam Blockage A beam of microwave energy passes from a sender to a separate receiver in bursts approximately 200 times per second.
|
Original
|
|
PDF
|
BFY181
Abstract: No abstract text available
Text: BFY181. HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA • Hermetically sealed microwave package • fT = 8 GHz F = 2.2 dB at 2 GHz
|
Original
|
BFY181.
BFY181
BFY181
|
PDF
|
microwave transistor bfy193
Abstract: No abstract text available
Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • • fT= 8 GHz F = 2.3 dB at 2 GHz 4
|
Original
|
BFY193
BFY193
Q62702F1610
QS9000
microwave transistor bfy193
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel NPN Silicon RF Transistor BFY180 Features • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0.2 to 2.5 mA • Hermetically sealed microwave package • f T = 6.5 GHz, F = 2.6 dB at 2 GHz •
|
OCR Scan
|
BFY180
Q97301013
Q97111419
BFY180
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
|
PDF
|
|
|
Q971
Abstract: BFY180
Text: BFY180 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. • Hermetically sealed microwave package • fT= 6,5 GHz F = 2.6 dB at 2 GHz • Space Qualified
|
Original
|
BFY180
Q97301013
QS9000
Q971
BFY180
|
PDF
|
BFY181
Abstract: No abstract text available
Text: BFY181 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz
|
Original
|
BFY181
Q62702F1607
QS9000
BFY181
|
PDF
|
Q62702F1609
Abstract: No abstract text available
Text: BFY183 HiRel NPN Silicon RF Transistor • • • • HiRel Discrete and Microwave Semiconductor 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz
|
Original
|
BFY183
BFY183
Q62702F1609
Q62702F1713
QS9000
|
PDF
|
microwave transistor bfy193
Abstract: BFY193
Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • Space Qualified
|
Original
|
BFY193
Q62702F1610
QS9000
microwave transistor bfy193
BFY193
|
PDF
|
A03 transistor
Abstract: BFy 90 transistor microwave transducer BFY183 marking code microwave
Text: HiRel NPN Silicon RF Transistor BFY 183 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz
|
Original
|
Q62702F1609
Q62702F1713
BFY183
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A03 transistor
BFy 90 transistor
microwave transducer
marking code microwave
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFY183 HiRel NPN Silicon RF Transistor • 4 3 1 2 HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz
|
Original
|
BFY183
BFY183
|
PDF
|
BFy 90 transistor
Abstract: No abstract text available
Text: BFY 183 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at co currents from 2mA to 30mA • Hermetically sealed microwave package • fT = 8 GHz F = 2.3 dB at 2 GHz • esa Space Qualified
|
Original
|
|
PDF
|
A03 transistor
Abstract: BFY280
Text: HiRel NPN Silicon RF Transistor BFY 280 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ fT = 7.2 GHz, F = 2.5 dB at 2 GHz ¥
|
Original
|
Q97302026
Q97111414
BFY280
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A03 transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package 4 3 1 2 fT= 6,5 GHz F = 3 dB at 2 GHz
|
Original
|
BFY196
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel NPN Silicon RF Transistor BFY182 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA • Hermetically sealed microwave package • f T = 8 GHz, F = 2.4 dB at 2 GHz
|
OCR Scan
|
BFY182
Q62702F1608
Q62702F1714
BFY182
de/semiconductor/products/35/35
de/semiconductor/products/35/353
FY182
GXM05552
|
PDF
|