3 phase bridge rectifier 400HZ
Abstract: 3-phase bldc motor single chip 500V direct drive MTBF fit IGBT 1200 H BRIDGE inverters using igbt in matlab single phase fully controlled rectifier 110v 440V ac to 390V dc converter circuit SEN-5282-2 full wave bridge rectifier 25A 50V fast recovery zener ssr 115v 400Hz
Text: Products and Solutions Sensitron Semiconductor • 221 West Industry Court · Deer Park, NY 11729-4681 · Phone 631 586 7600 · Fax (631) 242 9798 · World Wide Web - www.sensitron.com · E-mail - [email protected] 143-0209 Fully Integrated Motor Controllers
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AS9100
MIL-PRF-19500
MIL-PRF-38534
3 phase bridge rectifier 400HZ
3-phase bldc motor single chip 500V direct drive
MTBF fit IGBT 1200
H BRIDGE inverters using igbt in matlab
single phase fully controlled rectifier 110v
440V ac to 390V dc converter circuit
SEN-5282-2
full wave bridge rectifier 25A 50V
fast recovery zener
ssr 115v 400Hz
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ES405
Abstract: E405 MIL-PRF-83536 M83536 M83536/5
Text: E405 & ES405 Military Specified Meets MIL-PRF-83536 General Characteristics Number of Poles: Dimensions: 4 Form C 4PDT 0.810” x 0.810” x 0.640” (20.6mm x 20.6mm x 16.3mm) 0.058 lb. (26.4 grams) 0.072 lb. (32.6 grams) Weight: -Mounting Code 18: Switching Characteristics
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ES405
MIL-PRF-83536
125oC
ES405
E405
MIL-PRF-83536
M83536
M83536/5
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ES205
Abstract: M83536 MIL-PRF-83536 M83536/1 E205
Text: E205 & ES205 Military Specified Meets MIL-PRF-83536 General Characteristics Number of Poles: Dimensions: 2 Form C 2PDT 0.810” x 0.410” x 0.640” (20.6mm x 10.4mm x 16.3mm) 0.034 lb. (15.4 grams) 0.045 lb. (20.4 grams) Weight: -Mounting Code 18: Switching Characteristics
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ES205
MIL-PRF-83536
ES205
M83536
MIL-PRF-83536
M83536/1
E205
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC 6.3V to 100V NEV, NEH SERIES SUBMINIATURE NEV: Radial Lead, NEH: Axial Leads MECHANICAL SPECIFICATIONS Lead Solderability: The NEV and NEH series subminiature aluminum electrolytic capacitors are especially suitable for applications requiring high capacitance, low cost, and very small size. In fact, you’ll find these
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Leach relay M83536
Abstract: MS25271-D1 M83536 M83536/10-024 M39016-6-109L MS27400 MS27743 MS27401 M83536/2-024 MS27400-9
Text: QPL Qualified Products Listing Solutions for Power Switching and Control Authorized Worldwide Distributors UNITED STATES ALABAMA Avnet Electronics Marketing Huntsville Ph: 256 837-8700; Fax: 830-2565 ARIZONA Avnet Electronics Marketing Phoenix Ph: (480) 643-5600; Fax: 643-5775
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F-57430
5/2004/2K
Leach relay M83536
MS25271-D1
M83536
M83536/10-024
M39016-6-109L
MS27400
MS27743
MS27401
M83536/2-024
MS27400-9
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T9800
Abstract: No abstract text available
Text: Advance Information T98003 DVD Clock Source Applications • DVD players and recorders General Description The TLSI T98000 is a single-chip, integrated multiple Phase Locked Loop PLL clock synthesizer. The device uses an analog Phase Locked Loop (PLL) to accept a 27 MHz crystal input to produce multiple
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T98003
T98000
20-pin,
40/outputs
T98003ai
20-pin
T98003-SS20
T98003-SS20-TNR
T98003-DIE
T9800
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t9801
Abstract: pin diagram of 7425 crystal 26 Mhz package 2 x 6 27mhz
Text: Preliminary Information T98011 Multi-frequency Clock Synthesizer Applications HDTV, Digital TV, Set-top Box Clock Generator General Description The TLSI T98011 is a single-chip, integrated multiple Phase Locked Loop PLL clock synthesizer. The device uses a analog Phase Locked Loops (PLLs) to convert a single, low cost, 27 MHz fundamental
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T98011
T98011
27MHz/74
T98011PI
20-pin
T98011-Q20
T98011-Q20-TNR
t9801
pin diagram of 7425
crystal 26 Mhz package 2 x 6
27mhz
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28.224 crystal
Abstract: 28 MHZ crystal
Text: Advance Information T98000 Multifrequency PLL Clock Synthesizer Applications • Set-top boxes • MPEG video clock source General Description The TLSI T98000 is a single-chip, integrated multiple Phase Locked Loop PLL clock synthesizer. The device uses an analog Phase Locked Loop (PLL) to accept a 27 MHz crystal input to produce multiple
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T98000
T98000
IEEE1394
20-pin,
T98000ai
20-pin
T98000-SS20
T98000-SS20-TNR
T98000-DIE
28.224 crystal
28 MHZ crystal
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Untitled
Abstract: No abstract text available
Text: MX23C3210 5 Volt 32-Mbit 4M x 8 / 2M x 16 Mask ROM FEATURES ORDER INFORMATION • Bit organization - 4M x 8 (byte mode) - 2M x 16 (word mode) • Fast access time - Random access: 100ns (max.) • Current - Operating:60mA - Standby:100uA • Supply voltage
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MX23C3210
32-Mbit
100ns
100uA
500mil)
MX23C3210MC-10
MX23C3210MC-12
MX23C3210MC-15
MX23C3210TC-10
MX23C3210TC-12
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BTALB
Abstract: EC11B15244 esra ec11b152442d alps EC11 F258382 ec11b15 100MMT ALPS rotary switch
Text: No. Customer: alge distributor ECR2005-6189 Date: Aug. 30, 2005 SPECIFICATIONS ALPS'; MODEL EC11B15244 Spec. N Sample No.: F258382 4M RECEIPT STATUS RECEIVED By Date Signature Name Title ALPS. AUK ELKTHiC CO., LTD. DSG'D APP'D ENG. DEPT. DIVISION Head Office
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ECR2005-6189
EC11B15244
F258382
B6523
Q10O3fO3A
EC11B152442D
F2583824M
LA2M44-6S
BTALB
EC11B15244
esra
alps EC11
ec11b15
100MMT
ALPS rotary switch
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Die Products
Abstract: DieProducts murc160 1c4005 1C6151A 1C5711 c6090 1C4001 1C4004 MURC120
Text: " #!$ % ! ! & '#!$ % *+ ! +, - . - ( ( / +, - Schottky Rectifier Die Sensitron www.sensitron.com/dieproducts.htm IFSM V F @ IO 25° C Part Number Max VRM Die Size IO Max V mil A A V SD040SD15A/B 15 40 1 20 0.37 SD040SA30A/B 30 40 1 20 0.49 V IR @ VRM
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SD040SD15A/B
SD040SA30A/B
SD040SA45A/B
SD040SE45A/B
SD040SA60A/B
SD120UF200AG35,
MIL-PRF-38534,
MIL-PRF-19500,
Die Products
DieProducts
murc160
1c4005
1C6151A
1C5711
c6090
1C4001
1C4004
MURC120
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Untitled
Abstract: No abstract text available
Text: MX23L6410 64M-BIT 8M x 8 / 4M x 16 Mask ROM ORDER INFORMATION FEATURES • Bit organization - 8M x 8 (byte mode) - 4M x 16 (word mode) • Fast access time - Random access: 120ns (max.) • Current - Operating: 60mA (max.) - Standby: 15uA (max.) • Supply voltage
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MX23L6410
64M-BIT
120ns
MX23L6410MC-12
MX23L6410MC-15
150ns
MX23L6410TC-12
MX23L6410TC-15
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for 2n3904
Abstract: diode BY 127 2N3906 diode EMC for PCB Layout physical packages of a 2N3904 transistor 2N3904 2N3906 AN12 AN16 2N3906 PNP bipolar junction transistor
Text: AN 10.14 Using Temperature Sensing Diodes with EMC Devices Remote Sensors 1 Overview SMSC supplies a family of Environmental Monitoring and Control EMC devices that are capable of accurately measuring CPU, GPU and discrete diode (2N3904, 2N3906) temperatures. Most devices
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2N3904,
2N3906)
for 2n3904
diode BY 127
2N3906 diode
EMC for PCB Layout
physical packages of a 2N3904 transistor
2N3904
2N3906
AN12
AN16
2N3906 PNP bipolar junction transistor
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Untitled
Abstract: No abstract text available
Text: MX23L6411 64M-BIT 8M x 8 / 4M x 16 Mask ROM with Page Mode FEATURES ORDER INFORMATION • Bit organization - 8M x 8 (byte mode) - 4M x 16 (word mode) • Fast access time - Random access: 120ns (max.) - Page access: 50ns (max.) • Page Size - 8 words per page
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MX23L6411
64M-BIT
120ns
MX23L6411MC-12
MX23L6411TC-12
MX23L6411RC-12
D15/A-1
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1C6144a
Abstract: IC617 1C6151A IC-6141
Text: SENSITRON SEMICONDUCTOR 2000 CATALOG TVS 1500 Watt Transient Voltage Suppressor Bi-directional Chip 6.8 to 200Volts BREAKDOWN VOLTAGE V(BR)I AT l(B R) TEST CURRENT 1500W Min. V dc Ma d c WORKING PEAK REVERSE VOLTAGE V RW'M V dc 1C6138 1C6I38A 1C6139 1C6139A
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200Volts)
1C6138
1C6I38A
1C6139
1C6139A
1C6I40
1C6140A
IC6141
1C614IA
1C6I42
1C6144a
IC617
1C6151A
IC-6141
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70
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1000BJ-50
1000BJ-60
1000BJ-70
1000BJL-50
1000BJL-60
1000BJL-70
514256B-50
514256B-60
514256B-70
514256BJ-50
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UG-709
Abstract: UG-573 ug-572 ug-570 R166168
Text: CABLE CLAMP TYPE FOR FLEXIBLE CABLE Straight plugs .4 3 3 1 1 /fla ts CABLE GROUP 5/50 6/75 + 93 PART NUMBER R 166005 R 166 0 1 2 » UG 709 B/U UG 627 B/U a Dia. .220 (5.6) .255 (6.5) Assembly code M01 page 16 M02 page 16 MIL (UG) Straight plug .6 2 9 (1 6 )/fla tS
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WR137 flange dimensions
Abstract: choke flange WR137 flange WR137
Text: REV AUTH A REV AUTH 1 0 /1 5 /0 2 D ATE RL B 1 2 6 7 8 D ATE JLE 1 0 /3 0 /0 6 INITIAL RELEASE FREQ. NOTES CORRECTED; ILLUSTRATION, FORMAT UPDATED. FLANGE TYPE = CPRG = CPRF = UG COVER = UG CHOKE = COVER— GRV. FREQUENCY 5 .4 0 -6 .0 0 GHz 5 .8 0 -6 .5 0 GHz
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37-261A-Z-F1-F2-F3-F4
65A-Zâ
62A-Zâ
37-263A-Zâ
64A-Zâ
WR137
137-26XX-Z-F1-F2-F3-F+
WR137 flange dimensions
choke flange
WR137 flange
WR137
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Untitled
Abstract: No abstract text available
Text: SENS1TR0N SEMICONDUCTOR 2000 CATALOG TVS 1500 Watt Transient Voltage Suppressor Uni-directional Chip 6.12 to 210.0Volts SERIES TYPE BREAKDOWN VOLTAGE V ( B R j l AT I ( ) br TEST CURRENT l(B R ) WORKING PEAK REVERSE VOLTAGE MAXIMUM REVERSE CURRENT I ri MAXIMUM CLAMPING
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Untitled
Abstract: No abstract text available
Text: GEC P L E S S E Y 3 SEM ICONDUCTORS i DS4217-2.3 D S F 1 1 0 6 0 S G FAST RECOVERY DIODE APPLICATIONS • KEY PARAMETERS 6000V RRM 400A Jf AV 4200A FSM 700(iC Qr 6.0|iS v Snubber Diode For G TO Circuits. FEATURES ■ Double Side Cooling. ■ High Surge Capability.
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DS4217-2
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
00A/HS
10OOA/ns,
37bfl522
DD3D17fl
DSF11060SG
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Untitled
Abstract: No abstract text available
Text: NATIONAL SEMICON» LOGIC bS01122 0075360 441 « N S C 1 blE T> co T ~ Ì 6 - 0 7 - ( f National Semiconductor 54FCT/74FCT373 Octal Transparent Latch with TRI-STATE Outputs General Description Features The 'FCT373 consists of eight latches with TRI-STATE out
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bS01122
54FCT/74FCT373
FCT373
74FCT
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Untitled
Abstract: No abstract text available
Text: 4 ñE D 77 44 L.R0 000 1 2 1 Ô bTM K T-H-6-23-12 IPCH RICOH CORP/ ELECTRONIC f RP5B02N/W EK-016-8905 CMOS 2k bit SRAM 2 5 6 w o rd X 8 b it The RP5B02 is a 2k bit high speed CMOS static RAM organized 256 words by 8 bits and operates from a single 5V supply.
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T-H-6-23-12
RP5B02N/W
EK-016-8905
RP5B02
RP5B02N
7744bTQ
D0D1222
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Untitled
Abstract: No abstract text available
Text: $ 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES BLOCK DIAGRAM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100nA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years
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28C64A
100nA
28-pin
28-Lead,
44-Lead,
10x10mm)
bl03201
001DS11
DS00049E
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PDM44018
Abstract: No abstract text available
Text: bTHlDTD OODCmS? Tbfc. IP AT PDM 44018 64K x 18 Fast CMOS Synchronous Static SRAM with Burst Counter Features Description □ Interfaces directly with the i486 , Pentium™ processors 66.6,60,50,40,33.3 MHz The PDM44018 is a 1,179,648 bit synchronous ran
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PDM44018
64Kxl8
52-pin
PDM44018
A0-A15
DQ0-DQ17
MIL-STD-883
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