missile Microwave Radar Seekers
Abstract: missile seeker ka-band transistor HMC440 microwave transceiver receiver 20 GHz block Diagram mic n232 seeker HMC440QS16G HMC566
Text: MILITARY MICROWAVES Military Microwaves A GAAS MMIC LNA FOR MILITARY AND COMMERCIAL APPLICATIONS FROM 29 TO 36 GHZ HITTITE MICROWAVE CORP. Chelmsford, MA O ver the past two decades, the military market has widely embraced the use of monolithic microwave integrated
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mid-1980s
HMC-C027
HMCC027
missile Microwave Radar Seekers
missile seeker
ka-band transistor
HMC440
microwave transceiver
receiver 20 GHz block Diagram
mic n232
seeker
HMC440QS16G
HMC566
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mimo model simulink
Abstract: MIMO Matlab code uav design specification uav electronic design matlab code for mimo wireless WNW MAC Ba-5590 "channel estimation" military software part numbering BA5590
Text: White Paper Designing With Confidence for Military SDR Production Applications Introduction The military community is transforming the battlefield of the 21st century around network-centric warfare. From satellite to soldier and everything in between, system size, weight, and power SWaP are critical. Whether in manned
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Untitled
Abstract: No abstract text available
Text: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed
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RFG1M20090
RFG1M20090
DS130823
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Untitled
Abstract: No abstract text available
Text: RFG1M09180 RFG1M09180 180W GaN Power Amplifier 700MHz to 1000MHz The RFG1M09180 is optimized for commercial infrastructure, military communication and general purpose amplifier applications in the 700MHz to 1000MHz frequency band, ideal for WCDMA and LTE applications. Using
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RFG1M09180
700MHz
1000MHz
RFG1M09180
700MHz
1000MHz
DS130823
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Untitled
Abstract: No abstract text available
Text: RFHA1004 25W GaN Wide-Band Power Amplifier 700MHz to 2500MHz The RFHA1004 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, military communication radios and general purpose amplification. Using an
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RFHA1004
700MHz
2500MHz
RFHA1004
DS131018
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SKY77733
Abstract: QUALCOMM FLIP CHIP ASSEMBLY SKY77765 aat2430 aat3604 aat140
Text: Product Selection Guide June 2013 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog semiconductors. Leveraging core technologies, Skyworks supports automotive, broadband, wireless infrastructure, energy management, GPS, industrial, medical, military, wireless networking, smartphone, and tablet
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BRO254-13A
SKY77733
QUALCOMM FLIP CHIP ASSEMBLY
SKY77765
aat2430
aat3604
aat140
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SKY77709
Abstract: SKY77432 AAT2430 SMV1275-079 aat3604 DIODE AA116 TT6P3-0860T
Text: Product Selection Guide June 2014 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog semiconductors. Leveraging core technologies, Skyworks supports automotive, broadband, wireless infrastructure, energy management, GPS, industrial, medical, military, wireless networking, smartphone, and tablet
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BRO254-14A
SKY77709
SKY77432
AAT2430
SMV1275-079
aat3604
DIODE AA116
TT6P3-0860T
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Untitled
Abstract: No abstract text available
Text: RFHA3942 35W GaN Wide-Band Power Amplifier The RFHA3942 is a 48V, 35W high power discrete amplifier designed for military communications, electronic warfare, general purpose broadband amplifier, commercial wireless infrastructure, and industrial/scientific/medical applications. Using a second
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RFHA3942
RFHA3942
DS131023
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Untitled
Abstract: No abstract text available
Text: RFHA3944 65W GaN Wide-Band Power Amplifier The RFHA3944 is a 48V, 65W high power discrete amplifier designed for military communications, electronic warfare, general purpose broadband amplifier, commercial wireless infrastructure, and industrial/scientific/medical applications. Using a second
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RFHA3944
RFHA3944
DS131024
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Untitled
Abstract: No abstract text available
Text: RFHA3942 35W GaN Wide-Band Power Amplifier The RFHA3942 is a 48V, 35W high power discrete amplifier designed for military communications, electronic warfare, general purpose broadband amplifier, commercial wireless infrastructure, and industrial/scientific/medical applications. Using a second
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RFHA3942
RFHA3942
DS131204
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SKY77733
Abstract: sky77814 3G HSDPA repeater SKY77778-61 SKY77621 diode Marking code L4W SE2435
Text: Product Selection Guide November 2014 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog semiconductors. Leveraging core technologies, Skyworks supports automotive, broadband, wireless infrastructure, energy management, GPS, industrial, medical, military, wireless networking, smartphone, and tablet
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BRO254-14B
SKY77733
sky77814
3G HSDPA repeater
SKY77778-61
SKY77621
diode Marking code L4W
SE2435
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Untitled
Abstract: No abstract text available
Text: RFHA1042 125W GaN Power Amplifier 225MHz to 450MHz The RFHA1042 is optimized for military communications, commercial wireless infrastructure and general purpose applications in the 225MHz to 450MHz frequency band. Using an advanced 48V high power density gallium nitride GaN
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RFHA1042
225MHz
450MHz
RFHA1042
450MHz
DS131023
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body contact FET soi RF switch
Abstract: be68 Inselek SOI switch "body contact" RF FET solar panels in satellites tol72 mini circulator rg213 CABLE COAX soi switches 2003 body contact soi FET
Text: S pecial R eport UltraCMOS RFICs Ease the Complexity of Satellite Designs C ommercial and military satellites require cost-effective ICs that meet stringent high-reliability standards. In addition, they need to provide distinct advantages that allow designers to advance satellite
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1970s
1980s,
body contact FET soi RF switch
be68
Inselek
SOI switch "body contact" RF FET
solar panels in satellites
tol72
mini circulator
rg213 CABLE COAX
soi switches 2003
body contact soi FET
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Untitled
Abstract: No abstract text available
Text: RFHA3942D RFHA3942D 35W Linear GaN on SiC Power Amplifier Die The RFHA3942D is a 48V, 35W, GaN on SiC high power discrete amplifier die designed for military communications, electronic warfare, general purpose broadband, commercial wireless infrastructure, and industrial/scientific/medical applications. Using
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RFHA3942D
RFHA3942D
DS131024
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Untitled
Abstract: No abstract text available
Text: RFSW2100D RFSW2100D 55W GaN-on-SiC Reflective SPDT RF Switch The RFSW2100D is a GaN-on-SiC high power discrete RF switch designed for military and commercial wireless infrastructure, industrial/scientific/medical and general purpose broadband RF control and switching applications. Using an advanced high power
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RFSW2100D
RFSW2100D
30MHz
DS131029
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M39029/88
Abstract: 40M38298 D38999/49
Text: Qwik Connect GLENAIR n A p ril 2011 n VOLUME 15 n NUMBER 2 Connector Reference Guide QwikConnect WELCOME INTERCONNECT PROFESSIONALS! H igh performance MS type electrical connectors have been around since the late ’30s. As military and aerospace electronics became more prevalent and sophisticated, so did
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MIL-DTL-38999
M39029/88
40M38298
D38999/49
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Introduction to Military Standard Cylindrical Connectors
Abstract: ms3400 - Circular Connectors ms3402d CONNECTOR MS3100 BACK SHELL ms3126 MS3120 ms3402 4 PIN CIRCULAR MS CONNECTORS MS3450 ms3116 backshell
Text: Introduction to Military Standard Cylindrical Connectors Bridging the Gap the corresponding wires joined together, the circuit would not be affected.” When connectors are used to connect one set of wires to another, they are called wire-to-wire connectors. Wire-to-board connectors connect a
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MIL-DTL-38999
Introduction to Military Standard Cylindrical Connectors
ms3400 - Circular Connectors
ms3402d
CONNECTOR MS3100 BACK SHELL
ms3126
MS3120
ms3402
4 PIN CIRCULAR MS CONNECTORS
MS3450
ms3116 backshell
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GaN TRANSISTOR
Abstract: RF3932 rf3931 RF3934 RF3933 RF393x transistor hemt
Text: RFMD . Gallium Nitride High Power Transistors Introducing the development of RFMD’s GaN unmatched power transistor UPT family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5 µm GaN high electron mobility transistor (HEMT) semiconductor
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RF393x
simple40
GaN TRANSISTOR
RF3932
rf3931
RF3934
RF3933
transistor hemt
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Msp430 DSP camera
Abstract: 1080p30 video processor BT 1120 BLOCK DIAGRAM OF IR TOUCH SCREEN VOICE msp430 ir sensor interface with msp430 1080p30 802.11 wifi SOC guide BT 1120 osc 27 mhz TMS320DM6437
Text: Video Telephony Solutions 25 IP-Based Video Phone end user more mobility and interaction during video calls and more integration options with other streaming media appliances in the home. TI has a variety of solutions for this market that provide high media processing performance, rich peripherals
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GaN ADS
Abstract: GaN amplifier 120W transistor hemt RF393x
Text: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,
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RF393x
900MHz
220mA)
220mA,
RF3934
440mA)
900MHz)
GaN ADS
GaN amplifier 120W
transistor hemt
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80500 TRANSISTOR
Abstract: Vo 80500 TRANSISTOR HE 80500 HE 80500 TRANSISTOR CT 80500 80500+TRANSISTOR GR-900 double slug tuner varactor diode q factor measurement Silicon Power Cube
Text: Application Note 80500: Tuning Diodes L introduction In recent years continuous development of tuning varactors - voltage controlled capacitors - together with an increased commercial and military use has led to sub stantial improvement in Q, reproducibility, and reliability.
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Figure81sketches
DKV6550B
DVH6791,
80500 TRANSISTOR
Vo 80500 TRANSISTOR
HE 80500
HE 80500 TRANSISTOR
CT 80500
80500+TRANSISTOR
GR-900
double slug tuner
varactor diode q factor measurement
Silicon Power Cube
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MA47054
Abstract: ma47111 MA47041
Text: Axial Lead PIN Diodes Features • GLASS HERMETIC SEALED PACKAGES ■ SCREENABLE TO JANTXV AND MILITARY SPECIFICATIONS ■ LARGE SIGNAL SWITCH DESIGN ■ LOW CAPACITANCE 0.1 pF PIN DIODES ■ HIGH VOLUME MANUFACTURING CAPABILITY ■ TAPE AND REEL PACKAGING
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IN 4002 MIC diode
Abstract: MA47054 1N5719 equivalent ma-47266 1N5719 JANTX diode D 07-15 15
Text: M/A-COM SEMICONDnBRLNGTON ApKcm 11 D • SbM2E14 GD0113M T ■MIC Axial Lead PIN Diodes Features ■ GLASS HERMETIC SEALED PACKAGES ■ SCREENABLE TO JANTXV AND MILITARY SPECIFICATIONS ■ LARGE SIGNAL SWITCH DESIGN ■ LOW CAPACITANCE 0.1 pF PIN DIODES
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SbM2E14
GD0113M
IN 4002 MIC diode
MA47054
1N5719 equivalent
ma-47266
1N5719 JANTX
diode D 07-15 15
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HMMC-5008
Abstract: No abstract text available
Text: Gallium Arsenide Microwave Monolithic Integrated Circuits The high mobility of Gallium Arsenide can be put to use in MMICs as well as discrete devices, leading to families of high performance amplifiers and control MMICs. These devices are designed to work
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HMMC-5009
HMMC2006
MGS-71
MGS-70
HMMC-5008
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