BGA-56 DATASHEET
Abstract: mini ball corner PQFP die size cpga dimensions BGA-64 pad atmel 0945 PQFP 132 PACKAGE DIMENSION
Text: pkg-3.7-04/99 Packaging Introduction . 4-3 Package Options: Table . 4-3
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History History Issue Date Remark 0.0 Initial issue November 30, 2001 Preliminary 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2 Change VCCmax from 3.1V to 3.3V
|
Original
|
PDF
|
A64S0616
MO192
|
Untitled
Abstract: No abstract text available
Text: A64S9316A Preliminary 512K X 16 Bit Low Voltage Super RAM Document Title 512K X 16 Bit Low Voltage Super RAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 30, 2004 Preliminary November, 2004, Version 0.0 AMIC Technology, Corp.
|
Original
|
PDF
|
A64S9316A
48-ball
A64S9316A
MO192
|
A64S0616
Abstract: A64S0616G-55 A64S0616G-70
Text: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2
|
Original
|
PDF
|
A64S0616
MO192
A64S0616
A64S0616G-55
A64S0616G-70
|
SD card CARD PCB FOOTPRINT
Abstract: micro sd Micro SD chip BGF117 IEC610004-2 microsd microSD application note MICRO SD card footprint PCB microsd specification WLP 35 SAFETY
Text: Data Sheet, V2.0, January 2010 BGF117 High-Speed Mini-/Micro-SD Card ESD Protection and EMI Filter RF & Protection Devices Edition 2010-01-15 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2010. All Rights Reserved.
|
Original
|
PDF
|
BGF117
WLP-16-4-N-PO
WLP-16-4
WLP-16-4-N-FP
WLP-16-4-N-TP
BGF117
SD card CARD PCB FOOTPRINT
micro sd
Micro SD chip
IEC610004-2
microsd
microSD application note
MICRO SD card footprint PCB
microsd specification
WLP 35 SAFETY
|
Untitled
Abstract: No abstract text available
Text: Data Sheet, V2.0, January 2010 BGF117 High-Speed Mini-/Micro-SD Card ESD Protection and EMI Filter RF & Protection Devices Edition 2010-01-15 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2010. All Rights Reserved.
|
Original
|
PDF
|
BGF117
WLP-16-4-N-PO
WLP-16-4
WLP-16-4-N-FP
WLP-16-4-N-TP
BGF117
|
A64S0616
Abstract: A64S0616G-70 A64S0616G-85
Text: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2
|
Original
|
PDF
|
A64S0616
MO192
A64S0616
A64S0616G-70
A64S0616G-85
|
A64S9316
Abstract: A64S9316G-70
Text: A64S9316 512K X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 512K X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue May 16, 2002 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2
|
Original
|
PDF
|
A64S9316
MO192
A64S9316
A64S9316G-70
|
0.3mm pitch BGA
Abstract: A64S0616 A64S0616G-70 A64S0616G-85
Text: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2
|
Original
|
PDF
|
A64S0616
MO192
0.3mm pitch BGA
A64S0616
A64S0616G-70
A64S0616G-85
|
A64S9316
Abstract: A64S9316G-70
Text: A64S9316 512K X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 512K X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue May 16, 2002 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2
|
Original
|
PDF
|
A64S9316
MO192
A64S9316
A64S9316G-70
|
A64E06161
Abstract: A64E06161G A19 SMD
Text: A64E06161 Preliminary 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History History Issue Date Remark 0.0 Initial issue October 12, 2003 Preliminary 0.1 Change VCC range and VCCQ range November 30, 2004 Rev. No.
|
Original
|
PDF
|
A64E06161
100uA
MO192
A64E06161
A64E06161G
A19 SMD
|
Untitled
Abstract: No abstract text available
Text: A64E06161 Preliminary 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue October 12, 2003 Preliminary October, 2003, Version 0.0 AMIC Technology, Corp.
|
Original
|
PDF
|
A64E06161
48-ball
MO192
|
Untitled
Abstract: No abstract text available
Text: A64S0616A Preliminary 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue February 18, 2005 Preliminary February, 2005, Version 0.0 AMIC Technology, Corp.
|
Original
|
PDF
|
A64S0616A
48-ball
MO192
|
MO-187-AA
Abstract: AD8506 AD8606
Text: FEATURES High linearity PSRR: 105dB minimum CMRR: 105 dB typical Very low supply current: 20 A/amp maximum 1.8 V to 5.5 V single-supply operation Rail-to-rail input and output Low noise 2.9 μV p-p from 0.1 Hz to 10 Hz 4 mV offset voltage maximum Very low input bias current: 1 pA typical
|
Original
|
PDF
|
105dB
AD8606
090706-B
AD8506ARMZ1
AD8506ACBZ1
PR06900-0-8/07
MO-187-AA
AD8506
AD8606
|
|
BGF149
Abstract: N0771 trimble R6 sirius D4 WLP15
Text: Hipac High performance passive and actives on chip BGF149 High-Speed Mini-/Micro-SD Card ESD Protection and EMI Filter Datasheet Rev. 1.3, 2012-06-20 Final Power Management & Multimarket Edition 2012-06-20 Published by Infineon Technologies AG 81726 Munich, Germany
|
Original
|
PDF
|
BGF149
BGF149
N0771
trimble R6
sirius D4
WLP15
|
Untitled
Abstract: No abstract text available
Text: A64E06161 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History History Issue Date Remark 0.0 Initial issue October 12, 2003 Preliminary 0.1 Change VCC range and VCCQ range November 30, 2004 Rev. No. Change page access time from 20ns to 25ns
|
Original
|
PDF
|
A64E06161
100uA
100uA
MO192
|
A64E06161
Abstract: A64E06161G
Text: A64E06161 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History History Issue Date Remark 0.0 Initial issue October 12, 2003 Preliminary 0.1 Change VCC range and VCCQ range November 30, 2004 Rev. No. Change page access time from 20ns to 25ns
|
Original
|
PDF
|
A64E06161
100uA
MO192
A64E06161
A64E06161G
|
Untitled
Abstract: No abstract text available
Text: A64E06161 1M X 16 Bit Low Voltage Super RAM Document Title 1M X 16 Bit Low Voltage Super RAM Revision History History Issue Date Remark 0.0 Initial issue October 12, 2003 Preliminary 0.1 Change VCC range and VCCQ range November 30, 2004 Rev. No. Change page access time from 20ns to 25ns
|
Original
|
PDF
|
A64E06161
100uA
MO192
|
100PF
Abstract: BS62LV2007 BS62LV2007HC BS62LV2007HI BS62LV
Text: BSI Very Low Power/Voltage CMOS SRAM 256K X 8 bit BS62LV2007 FEATURES DESCRIPTION • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current
|
Original
|
PDF
|
BS62LV2007
100ns
BS62LV2007
R0201-BS62LV2007
100ns
-40oC
100PF
BS62LV2007HC
BS62LV2007HI
BS62LV
|
JEDEC Drawing MO-153, Variation AA
Abstract: AT24C128BN-SH-T AT24C128BN-SH-B AT24C128B AT24C128BD3-DH-T AT24C128B-PU AT24C128B-TH-B AT24C128B-TH-T AT24C128BU2-UU-T AT24C128BY6-YH-T
Text: 1. Features • Low-voltage and Standard-voltage Operation – 1.8 VCC = 1.8V to 5.5V Internally Organized as 16,384 x 8 Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol 1 MHz (5.5V, 2.5V), and 400 kHz (1.8V) Compatibility
|
Original
|
PDF
|
64-byte
AT24C128B
JEDEC Drawing MO-153, Variation AA
AT24C128BN-SH-T
AT24C128BN-SH-B
AT24C128B
AT24C128BD3-DH-T
AT24C128B-PU
AT24C128B-TH-B
AT24C128B-TH-T
AT24C128BU2-UU-T
AT24C128BY6-YH-T
|
5296a
Abstract: AT24C128BN-SH-T AT24C128BY6-YH-T AT24C128B AT24C128BN-SH-B AT24C128B-TH-T atmel lot marking atmel lot marking eeprom atmel part marking mo-229 nseb
Text: 1. Features • Low-voltage and Standard-voltage Operation – 1.8 VCC = 1.8V to 5.5V Internally Organized as 16,384 x 8 Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol 1 MHz (5.5V, 2.5V), and 400 kHz (1.8V) Compatibility
|
Original
|
PDF
|
64-byte
5296a
AT24C128BN-SH-T
AT24C128BY6-YH-T
AT24C128B
AT24C128BN-SH-B
AT24C128B-TH-T
atmel lot marking
atmel lot marking eeprom
atmel part marking mo-229
nseb
|
bga 6x8
Abstract: No abstract text available
Text: BSI Very Low Power/Voltage CMOS SRAM 256K X 8 bit BS62LV2007 FEATURES DESCRIPTION • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current
|
Original
|
PDF
|
BS62LV2007
100ns
BS62LV2007
R0201-BS62LV2007
bga 6x8
|
5296A
Abstract: No abstract text available
Text: 1. Features • Low-voltage and Standard-voltage Operation • • • • • • • • • • • • – 1.8 VCC = 1.8V to 5.5V Internally Organized as 16,384 x 8 Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol
|
Original
|
PDF
|
64-byte
5296A
|
A12C
Abstract: A14C A15C CY62127V
Text: CY62127V V CYPRESS 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (Aq
|
OCR Scan
|
PDF
|
CY62127V
44-pin
CY62127V
A12C
A14C
A15C
|