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    icl 555

    Abstract: MIP554 ICL300
    Text: MIP5540MS Silicon MOS FET type integrated circuit • Features  Package  It corresponds to the output for 10 W.  Typical LED peak current : 1.0 A  On resistance can be decreased to 3.7 Ω by adjusting the breakdown voltage to 400 V.  The stability operation that suppresses the flicker in the triac light dimmer is possible.


    Original     		PDF MIP5540MS O-220IPD7-A2 MIP554 MIP803/804 MIP52 MIP816/826 MIP55 MIP50 MIP51 icl 555 MIP554 ICL300

    MIP551

    Abstract: MIP0 255 mip2
    Text: MIP5510MS Silicon MOS FET type integrated circuit • Features  Package  Worldwide input voltage, 80 VAC to 280 VAC  Typical LED peak current: 0.5 A Peak current can be adjusted in two-stage corresponding to the input voltage.  Dimmer control function: EX-pin voltage range, 0 V to 3 V


    Original     		PDF MIP5510MS MIP551 MIP816/826 MIP55£ MIP803/804 MIP50£ MIP51£ MIP551 MIP0 255 mip2

    MIP553

    Abstract: MIP5530MD MIP553MD TO-220IPD7-A2 traffic light using 68K
    Text: MIP5530MD Silicon MOS FET type integrated circuit • Features  Package  Possible to correspond to the output about 30 W by the world wide input. with heat sink  Typical LED peak current : 1.5 A  With built-in LED short-circuit protection function.


    Original     		PDF MIP5530MD O-220IPD7-A2 MIP553MD MIP553 MIP5530MD MIP553MD TO-220IPD7-A2 traffic light using 68K

    MIP5530MD

    Abstract: MIP553MD MIP53 MIP553 traffic light using 68K TO-220IPD7-A2 triac applications circuit diagram for dimmer lamp
    Text: MIP5530MD Silicon MOS FET type integrated circuit • Features  Package  Possible to correspond to the output about 30 W by the world wide input. with heat sink  Typical LED peak current : 1.5 A  With built-in LED short-circuit protection function.


    Original     		PDF MIP5530MD O-220IPD7-A2 MIP553MD voltageP01* MIP00* MIP55* MIP816/826 MIP50* MIP02* MIP52* MIP5530MD MIP553MD MIP53 MIP553 traffic light using 68K TO-220IPD7-A2 triac applications circuit diagram for dimmer lamp

    MIP552MD

    Abstract: MIP552 MIP5520MD
    Text: MIP5520MD Silicon MOS FET type integrated circuit • Features  Package  Worldwide input voltage, 80 VAC to 280 VAC  Typical LED peak current: 1.0 A Peak current can be adjusted in two-stage corresponding to the input voltage.  Dimmer control function: EX-pin voltage range, 0 V to 3 V


    Original     		PDF MIP5520MD O220-IPD7-A2 MIP552MD MIP816/826 MIP55£ MIP803/804 MIP50£ MIP51£ MIP552MD MIP552 MIP5520MD

    MIP554

    Abstract: ICL300 MIP5540MS icl 555
    Text: MIP5540MS Silicon MOS FET type integrated circuit • Features  Package  It corresponds to the output for 10 W.  Typical LED peak current : 1.0 A  On resistance can be decreased to 3.7 Ω by adjusting the breakdown voltage to 400 V.  The stability operation that suppresses the flicker in the triac light dimmer is possible.


    Original     		PDF MIP5540MS O-220IPD7-A2 MIP554 MIP00* MIP55* MIP816/826 MIP50* MIP02* MIP52* MIP56* MIP554 ICL300 MIP5540MS icl 555

    MIP004

    Abstract: No abstract text available
    Text: MIP0040MS Type Silicon MOSFET type Integrated Circuit Application For Switching Power Supply Control Structure CMOS type Equivalent Circuit Figure 8 Out Line DIP7-A1 Marking MIP004 A. ABSOLUTE MAXIMUM RATINGS Ta= 25°C±3°C No. 1 Item Ratings Unit VIN –0.3 to 500


    Original     		PDF MIP0040MS MIP004 MIP01* MIP02* MIP00* MIP55* MIP816/826 MIP52* MIP56* MIP53* MIP004

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    Untitled

    Abstract: No abstract text available
    Text: MIP106 Intelligent Power Devices IPDs MIP106 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 Single chip IC of protection function circuit


    Original     		PDF MIP106 MIP13Â MIP14Â MIP15Â MIP16Â MIP17Â MIP18Â MIP01Â MIP02Â

    mip2f2

    Abstract: power supply LED 3w mip2f2 MIP2F2 IC mip2f mip2fx IC301 MIP2C2 MIP2C2 MIP2F2 power supply mip2f2 MIP022X
    Text: IPD Product Selection Guide October 1, 2008 Semiconductor Company, Panasonic Corporation Precautions on the Sales of IPDs 1 The sale and/or the export of IPD products to any customer or customers located in any country other than Japan is expressly prohibited by the Agreement made and executed by and between Power Integrations, Inc. and Panasonic Corporation.


    Original     		PDF

    MIP414

    Abstract: MIP414MD
    Text: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4140MD O-220IPD7-A2 MIP414MD MMIP811/812 MMIP814/815/816 MIP82£ MIP55£ MIP414 MIP414MD

    MIP417MD

    Abstract: TO-220IPD7-A2 mip41 MIP16
    Text: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4170MD O-220IPD7-A2 MIP417MD MIP811/812 MIP814/815/816 MIP82£ MIP55£ MIP417MD TO-220IPD7-A2 mip41 MIP16

    mip160

    Abstract: MIP162 mip163 MIP164 MIP166 MIP2 MIP165 mip*163 MIP9E
    Text: Intelligent Power Devices IPDs MIP160, MIP162, MIP163, MIP164, MIP165, MIP166 Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V)


    Original     		PDF MIP160, MIP162, MIP163, MIP164, MIP165, MIP166 MIP13£ MIP14£ MIP15£ MIP16£ mip160 MIP162 mip163 MIP164 MIP166 MIP2 MIP165 mip*163 MIP9E

    MIP2

    Abstract: MIP16 MIP805
    Text: Intelligent Power Devices IPDs MIP805 Silicon MOS IC • Features unit: mm 0.25±0.1 Part A M Di ain sc te on na tin nc ue e/ d 12° ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g


    Original     		PDF MIP805 MIP13£ MIP14£ MIP15£ MIP16£ MIP17£ MIP18£ MIP01£ MIP02£ MIP10£ MIP2 MIP16 MIP805

    mip0210

    Abstract: MIP0210SP MIP16 japanese fet regulator ic st mip4
    Text: Intelligent Power Devices IPDs MIP0210SP Silicon MOS IC • Features M Di ain sc te on na tin nc ue e/ d ● Switching power supply (to 7W) ● AC adaptor ● Battery charger 8 2 7 3 6 4 5 6.3±0.2 7.62±0.25 Symbol Drain voltage VD Control voltage VC Output current


    Original     		PDF MIP0210SP MIP13£ MIP14£ MIP15£ MIP16£ MIP17£ MIP18£ MIP01£ MIP02£ MIP10£ mip0210 MIP0210SP MIP16 japanese fet regulator ic st mip4

    mip2m4

    Abstract: MIP2M40 MIP2M40MS marking aef MIP2M TVS marking v6 MARKING CODE V6 V4 MARKING marking code V3 V3 marking code
    Text: MIP2M40MS Silicon MOS FET type integrated circuit • Features  Package  AC input detecting function  By connecting SO terminal, it is able to select functions as below: 1 Boot up and stop operation according to AC input or output shortcircuit SO teminal to VDD terminal)


    Original     		PDF MIP2M40MS MIP803/804 MIP816/826 MIP51£ MIP55£ MIP50£ mip2m4 MIP2M40 MIP2M40MS marking aef MIP2M TVS marking v6 MARKING CODE V6 V4 MARKING marking code V3 V3 marking code

    MIP16

    Abstract: mip02 MIP2 MIP501 MIP502 MIP55
    Text: MIP501, MIP502 Intelligent Power Devices IPDs MIP501, MIP502 Silicon MOS IC MIP501 (V DSS > 40V Ron < 0.5Ω) Over-current-protection function built-in 4.5±0.2 0.65±0.1 0.85±0.1 Direct drive possible by the logic circuit • Applications ● 0.65±0.1


    Original     		PDF MIP501, MIP502 MIP501 MIP13£ MIP14£ MIP16 mip02 MIP2 MIP501 MIP502 MIP55

    12v car battery charger wiring diagram

    Abstract: MIP108 MIP55 MIP16
    Text: MIP108 Intelligent Power Devices IPDs MIP108 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) Single chip IC of protection circuit


    Original     		PDF MIP108 MIP13£ MIP14£ MIP15£ MIP16£ MIP17£ MIP18£ MIP01£ MIP02£ 12v car battery charger wiring diagram MIP108 MIP55 MIP16

    MIP0222

    Abstract: mip0223 MIP0221SP MIP0222SP mip0221 MIP0223SP MIP9E 0224S MIP0223S mip0224
    Text: Intelligent Power Devices IPDs MIP0221SP, MIP0222SP, MIP0223SP, MIP0224SP Silicon MOS IC • Features ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V) ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.


    Original     		PDF MIP0221SP, MIP0222SP, MIP0223SP, MIP0224SP MIP0221SP MIP0222SP MIP13£ MIP14£ MIP15£ MIP16£ MIP0222 mip0223 MIP0221SP mip0221 MIP0223SP MIP9E 0224S MIP0223S mip0224

    mip2k4

    Abstract: MIP2K MIP2K50MS MIP2 mip2k5 MIP9E MIP55 MIP9 MIP2K50M
    Text: MIP2K50MS Silicon MOS FET type integrated circuit • Features  Package  Built-in jitter function  Built-in charge protection circuit Built-in overheating, loadshorting and overvoltage protection circuits  Chargers for DSC, etc.  AC adapter


    Original     		PDF MIP2K50MS MIP803/804 MIP816/826 MIP51£ MIP55£ MIP50£ mip2k4 MIP2K MIP2K50MS MIP2 mip2k5 MIP9E MIP55 MIP9 MIP2K50M

    MIP53

    Abstract: MIP9L marking aef mip2e MIP2L5MY MIP2L50MY MIP2 ipd mip4
    Text: MIP2L50MY Silicon MOS FET type integrated circuit • Features  Package  Reducing the average noise Adding a frequency jitter function to MIP2E/3Exx series to dramatically reduce the average noise and simplify EMI parts.  ILIMIT input correction function to reduce input voltage dependency of


    Original     		PDF MIP2L50MY O-220-A2 IDP01* MIP00* MIP55* MIP816/826 MIP50* MIP02* MIP52* MIP56* MIP53 MIP9L marking aef mip2e MIP2L5MY MIP2L50MY MIP2 ipd mip4

    MIP414MD

    Abstract: MIP414 MIP4140md
    Text: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


    Original     		PDF MIP4140MD O-220IPD7-A2 MIP414MD MIP811/812 MIP814/815/816 MIP82£ MIP55£ MIP414MD MIP414 MIP4140md

    MIP161

    Abstract: MIP16 mip161 application MIP18 mip3
    Text: Intelligent Power Devices IPDs MIP161 Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V) ● An over voltage protection circuit for the secondary side, a pulseby-pulse overcurrent protection circuit and a timer auto-restart circuit are integrated.


    Original     		PDF MIP161 MIP13£ MIP14£ MIP15£ MIP16£ MIP17£ MIP18£ MIP01£ MIP02£ MIP10£ MIP161 MIP16 mip161 application MIP18 mip3

    MIP0102SY

    Abstract: MIP0101SY MIP*0104SY MIP0104SY MIP9E MIP0101 MIP0100SY IPD Converter MIP2 MIP814
    Text: Intelligent Power Devices IPDs MIP0100SY, MIP0101SY, MIP0102SY, MIP0103SY, MIP0104SY Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● An over voltage protection circuit for the secondary side, a pulseby-pulse overcurrent protection circuit and a timer auto-restart circuit are integrated.


    Original     		PDF MIP0100SY, MIP0101SY, MIP0102SY, MIP0103SY, MIP0104SY MIP13£ MIP14£ MIP15£ MIP16£ MIP17£ MIP0102SY MIP0101SY MIP*0104SY MIP0104SY MIP9E MIP0101 MIP0100SY IPD Converter MIP2 MIP814