mitsubishi marking
Abstract: mitsubishi part marking
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES MARKING SPECIFICATIONS 4.4 CUSTOMIZED MARKING Mitsubishi Electric can also produce devices with clientspecified part numbers, logos, etc. on a special order basis. Please contact your rep for detail. Mar.’98
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MH8S64AQFC -7
Abstract: M5M51008CFP-70HI sop-32 pin Shipping Trays S1912 M5M5V108DFP-70HI jeida dram 88 pin M5M465165 MH8S64AQFC-6 MH8S64DBKG-6 PC-100
Text: Please Read Notes First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents New Publications MCP Multi Chip Package Standard Discrete DRAM PC Cards Standard DRAM Modules IC Package SRAM Flash Memory Quality Assurance and Reliability Testing
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cm300dx-12a
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM300DX-12A HIGH POWER SWITCHING USE INSULATED TYPE - 5th Generation NX series - CM300DX-12A IC ….……………….……. 300A VCES …………….….…. 600V ●Flat base Type ●Copper base plate non-plating ●RoHS Directive compliant
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CM300DX-12A
UL1557,
E323585
24lear,
cm300dx-12a
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NTC Thermistor 120
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE INSULATED TYPE - 5th Generation NX series - CM200DX-24A IC ….……………….……. 200A VCES …………….….…. 1 2 0 0 V ●Flat base Type ●Copper base plate non-plating ●RoHS Directive compliant
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CM200DX-24A
UL1557,
E323585
NTC Thermistor 120
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM300DX-24A HIGH POWER SWITCHING USE INSULATED TYPE - 5th Generation NX series - CM300DX-24A IC ….……………….……. 300A VCES …………….….…. 1 2 0 0 V ●Flat base Type ●Copper base plate non-plating ●RoHS Directive compliant
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CM300DX-24A
UL1557,
E323585
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4934CM
MGF4934CM
12GHz
MGF4934CM-75
15000pcs/reel
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c2e1 marking
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM150DX-24A HIGH POWER SWITCHING USE INSULATED TYPE - 5th Generation NX series - CM150DX-24A IC ….……………….……. 150A VCES …………….….…. 1 2 0 0 V ●Flat base Type ●Copper base plate non-plating ●RoHS Directive compliant
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CM150DX-24A
UL1557,
E323585
c2e1 marking
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4936AM
MGF4936AM
12GHz
MGF4936AM-75
15000pcs/reel
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T32BS8WG
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Mitsubishi Stacked CSP
Abstract: mitsubishi marking FA18 transistor
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Mitsubishi Stacked CSP
Abstract: mitsubishi marking
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Hitachi Stacked CSP
Abstract: Mitsubishi Stacked CSP
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4936AM
MGF4936AM
12GHz
MGF4936AM-75
15000pcs/reel
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MGF4934
Abstract: mgf4934cm MGF4934CM-75 130/KU 601
Text: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4934CM
MGF4934CM
12GHz
MGF4934CM-75
15000pcs/reel
MGF4934
130/KU 601
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Untitled
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M6MGD137W33WG
Abstract: mitsubishi top marking
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
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MGF4953A
MGF4953A
12GHz
000pcs/reel
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Mitsubishi RAM
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Hitachi Stacked CSP
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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E1070
Abstract: BEIJER E1070 STR 6053 beijer panel mac str w 6053 mitsubishi mac 50 interface configuration washing machine service manual FOR sharp STR w 6053 n E1000 SHARP 44
Text: MITSUBISHI ELECTRIC Mac E Series Human Machine Interface Installation Manual E1070 Art. no.: 169276 10 02 2006 Version A MITSUBISHI ELECTRIC INDUSTRIAL AUTOMATION Foreword Installation manual for the E1000 series operator terminals Foreword The E1000 operator terminal is developed to satisfy the demands of humanmachine communication. Built-in functions such as displaying and controlling
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E1070
E1000
IL-42160
ZA-1600
D-40880
E1070
BEIJER E1070
STR 6053
beijer panel mac
str w 6053
mitsubishi mac 50 interface configuration
washing machine service manual FOR sharp
STR w 6053 n
SHARP 44
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Untitled
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4934BM 4pin flat lead package DESCRIPTION The MGF4934BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4934BM
MGF4934BM
12GHz
MGF4934BM-75
15000pcs/reel
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
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MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
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THYRISTOR sct 280 04
Abstract: 80173-111-01 80173-111-01 hp 2521 MITSUBISHI GATE COMMUTATED GU-D04 THYRISTOR MAR 615 hp 2521 CS thyristor cs 6-25 FGO100A-130DS FGC400A-130DS GCU04AA-130
Text: MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT GCU04AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE 6. GCT PART Type name: FGGM0A-13ÖDS (l)MAXIMÜM RATINGS_ No CONDITIONS SYMBOL Repetitive peak reverse voltage VOLTAGE UNIT 6500 V
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GCU04AA-130
FGO100A-130DS)
73iwas
I00I0IBB0
QHII1BO8TO2000
GCU04AA-
PBA30462
THYRISTOR sct 280 04
80173-111-01
80173-111-01 hp 2521 MITSUBISHI GATE COMMUTATED
GU-D04
THYRISTOR MAR 615
hp 2521
CS thyristor cs 6-25
FGO100A-130DS
FGC400A-130DS
GCU04AA-130
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