gaas fet marking B
Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source
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QL-1104E-A
July/2008)
GD-26,
MGF4951A/52A
MGF4953A/54A
MGF1951A
MGF1952A
MGF1953A
MGF1954A
MGF4851A
gaas fet marking B
gaas fet micro-X Package marking
gaas fet marking a
marking K gaas fet
MGF1961A
gaas fet micro-X Package
gaas fet marking J
MGF1964A
MGF1963A
Micro-X marking "K"
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
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MGF4953A
MGF4953A
12GHz
000pcs/reel
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PDF
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FET GAAS marking a
Abstract: gaas fet marking mitsubishi top side marking
Text: < Power GaAs FET > MGF1954A Leadless ceramic package DESCRIPTION The MGF1954A power MES FET is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB
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MGF1954A
MGF1954A
23dBm
12GHz
100mA
000pcs/reel
FET GAAS marking a
gaas fet marking
mitsubishi top side marking
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Untitled
Abstract: No abstract text available
Text: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB
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MGF1952A
MGF1952A
17dBm
12GHz
000pcs/reel
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PDF
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Untitled
Abstract: No abstract text available
Text: < Power GaAs FET > MGF1953A Leadless ceramic package DESCRIPTION The MGF1953A power MES FET is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB
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MGF1953A
MGF1953A
20dBm
12GHz
100mA
000pcs/reel
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PDF
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mitsubishi top side marking
Abstract: MGF1951A
Text: < Power GaAs FET > MGF1951A Leadless ceramic package DESCRIPTION The MGF1951A power MES FET is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB
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MGF1951A
MGF1951A
13dBm
12GHz
000pcs/reel
mitsubishi top side marking
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4953B Leadless ceramic package DESCRIPTION The MGF4953B super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing
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MGF4953B
MGF4953B
20GHz
000pcs/reel
MGF4953B-01)
MGF4953B-70al
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PDF
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HEMT marking K
Abstract: MGF4953A
Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
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MGF4953A
MGF4953A
12GHz
000pcs/reel
HEMT marking K
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PDF
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ID600A
Abstract: No abstract text available
Text: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB
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MGF1952A
MGF1952A
17dBm
12GHz
000pcs/reel
ID600A
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PDF
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Untitled
Abstract: No abstract text available
Text: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB
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MGF1952A
MGF1952A
17dBm
12GHz
000pcs/reel
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MGF4851
Abstract: transistor 305
Text: < Power GaAs HEMT > MGF4851A Leadless ceramic package DESCRIPTION The MGF4851A power InGaAs HEMT High Electron Mobility Transistor is designed for use in S to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing
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MGF4851A
MGF4851A
12GHz
000pcs/reel
MGF4851
transistor 305
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PDF
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MGF4953B
Abstract: MGF4953B-70
Text: < Low Noise GaAs HEMT > MGF4953B Leadless ceramic package DESCRIPTION The MGF4953B super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing
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MGF4953B
MGF4953B
20GHz
000pcs/reel
000pcs/reel
MGF4953B-01)
MGF4953B-70)
MGF4953B-70
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4934CM
MGF4934CM
12GHz
MGF4934CM-75
15000pcs/reel
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
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MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
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DIODE GP 704
Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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RD12MVP1
175MHz,
RD12MVP1
175MHz
175MHz)
DIODE GP 704
transistor mosfet 536
VGS-75
0452 mosfet
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PDF
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Micro-X marking "K"
Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
Text: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz
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MGF4941CL
MGF4941CL
4000pcs
Micro-X marking "K"
low noise Micro-X marking "K"
Micro-X Marking E
RO4350B rogers
HEMT marking G
HEMT marking K
GD-32
hemt low noise die
Micro-X Marking v
transistor "micro-x" "marking" 3
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)
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MGF4963BL
MGF4963BL
20GHz
4000pcs
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)
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MGF4964BL
MGF4964BL
20GHz
4000pcs
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4931AM 4pin flat lead package DESCRIPTION The MGF4931AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4931AM
MGF4931AM
12GHz
15000pcs/reel
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TRANSISTOR D 1785
Abstract: diode GP 829 transistor 3669 6030D RD05MMP1 diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
TRANSISTOR D 1785
diode GP 829
transistor 3669
6030D
diode 6.2
TRANSISTOR D 1765 720
transistor D 1762
than85
5.5w
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4965BM 4pin flat lead package DESCRIPTION The MGF4965BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4965BM
MGF4965BM
20GHz
15000pcs/reel
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PDF
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4965BM 4pin flat lead package DESCRIPTION The MGF4965BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
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MGF4965BM
MGF4965BM
20GHz
15000pcs/reel
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI ICs TV M52766FP PLL SPLIT V IF / SIF DESCRIPTION The M52766FP is a semiconducttor 1C with PLL system of VIF/ SIF. The circuit includes video UF amplifier,PLL video detector, IFAGC,RFAGC,VCO, AFT, LOCK DET,EQ,REG,QIFamplifier,QIF detector,QIF AGC,LIM,FM
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M52766FP
M52766FP
M5M4V4160J
4194304-BIT
262144-WORD
16-BIT
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V23L HITACHI
Abstract: mitsubishi Lot number constitution PAL 007 a audio amplifier ic mitsubishi weekly code marking code V9 M52766FP V17L marking sg22 mitsubishi running code mitsubishi top side marking
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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