Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Welders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 5.4 M4 M6 Feb. 1999 ♦ MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES
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QM200HC-M
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Mitsubishi transistor
Abstract: transistor 1015 K 192 A transistor diode 210q k 1 transistor mitsubishi power Modules
Text: MITSUBISHI TRANSISTOR MODULES ! QM1000HA-24B j HIGH POWER SWITCHING USE j INSULATED TYPE { APPLICATION AC m otor controllers, UPS, CVCF, DC m otor controllers, NC equipm ent, W elders 2 - 1 90 MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES QM1000HA-24B
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QM1000HA-24B
1000H
Mitsubishi transistor
transistor 1015
K 192 A transistor
diode 210q
k 1 transistor
mitsubishi power Modules
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Forklifts, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm OC BO - m -M - - < EO ó ÓE BX M4 Feb. 1999 ♦ MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES
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QM600HD-M
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S A5B
Abstract: A10B A11B M66223FP renesastechnologycorp
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M66223FP
1/015A"
1/014A
1/013A
1/012A
1/011A
I/09A
I/08A
I/07A
I/05A
S A5B
A10B
A11B
M66223FP
renesastechnologycorp
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2SC738
Abstract: 2SC7 FT440
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC738 FOR FM RADIO HIGH FREQUENCY AMPLIFY, FREQUENCY EXCHANGE, LOCAL OSCILATION APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC738 is a resin sealed silicon NPN epitaxial type transistor
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2SC738
2SC738
100MHz,
440MHztyp
SC-43
100MHz
2SC7
FT440
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4258 FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4258 is a super mini package resin sealed silicon NPN epitaxial Unit:mm OUTLINE DRAWING
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2SC4258
2SC4258
11mstyp
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2SC4266
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4266 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4266 is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING frequency voltage amplify implication.
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2SC4266
2SC4266
2SA1630.
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2SC2320L
Abstract: h a 431 transistor RO10K
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC2320L FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC2320L is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING Unit:mrn < 5.6MAX
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2SC2320L
2SC2320L
100nnA,
NVS150mV
SC-43
270Hz
h a 431 transistor
RO10K
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transistor marking 2A H
Abstract: mitsubishi vcb 2sc4357 mitsubishi symbol marking La 4108
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4357 FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4357 is a silicon NPN epitaxial type transistor designed for high collector current, for high voltage.
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2SC4357
2SC4357
500mW
transistor marking 2A H
mitsubishi vcb
mitsubishi symbol marking
La 4108
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2SA999L
Abstract: 2SA999 trnsistor
Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SA999L FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA999L is a silicon PNP epitaxial type trnsistor designed for low Unftrmm OUTLINE DRAWING ^ 5.6MAX
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2SA999L
2SA999L
-100mA,
SC-43
270Hz
30kHz
2SA999
trnsistor
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2SG3053
Abstract: 2SC3053
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3053 FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SG3053 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING „ „
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2SC3053
2SG3053
-100MH2
2SC3053
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semiconductor relay 6v
Abstract: 2SA1287 2SC3247
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1287 FOR RELAY DRIVE, POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1287 is silicon PNP epitaxial type transistor. Designed with high Voltage, high collector current, dissipation and high
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2SA1287
2SA1287
2SC3247.
to800
-500mA,
-10mA)
900mW
semiconductor relay 6v
2SC3247
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2SC5170
Abstract: LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5170 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5170 is a silicon NPN epitaxial type transistor. It is designed for
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2SC5170
2SC5170
100Hz)
110mVtyp
X10-3
LE300
mitsubishi vcb
transistor Common Base amplifier
common base amplifier circuit
DUAL TRANSISTOR
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2SC5169
Abstract: low noise transistor table
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5169 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SCS169 is a silicon NPN epitaxial type transistor. It Is designed for Unit:mm OUTLINE DRAWING
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2SC5169
2SCS169
100mVtyp
X10-3
2SC5169
low noise transistor table
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2sc1914
Abstract: 2SC1914A
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1914A FOR LOW FREQUENCY VOLTAGE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1914A is a silicon NPN epitaxial type high voltage transistor OUTLINE DRAWING Unit: mm ¿ 5.6MAX
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2SC1914A
2SC1914A
150MHz
270Hz
2sc1914
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1399 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1399 is a silicon PNP epitaxial type transistor designed with high OUTLINE DRAWING ¿5.1 MAX
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2SA1399
2SA1399
2SC3581.
600mA
150MHztyp
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2sc710 transistor
Abstract: 2sc710 transistor 2SC710 2SC710 C 2SC7
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC710 FOR FM • AM RADIO HIGH AND MEDIUM FREQUENCY AMPLIFY APPUCATION SIUCON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC710 is a resin sealed silicon NPN epitaxial type transistor OUTLINE DRAWING UniCmm
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2SC710
2SC710
SC-43
100MHz
2sc710 transistor
transistor 2SC710
2SC710 C
2SC7
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3580 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC3580 is a silicon NPN epitaxial type transistor. Unit: mm ¿5.1M A X Complementary with 2SA1398.
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2SC3580
2SC3580
2SA1398.
80MHz
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2SC3581
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3581 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3581 is a silicon NPN epitaxial type transistor designed for high OUTLINE DRAWING Unitrmm ¿5.1 MAX
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2SC3581
2SC3581
2SA1399.
600mA
150MHz
25tWARD
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2sa1299
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1299 FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1299 is silicon P N P epitaxial type transistor designed for low Unit: mm OUTLINE DRAWING 4.3MAX
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2SA1299
2SA1299
150mV
-100mA,
-10mA)
270Hz
X10-3
30kHz
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2SC1708
Abstract: 2SC170 2SC1708A
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1708A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1708A is a silicon NPN epitaxial type high voltage low frequency Unitmm OUTLINE DRAWING t S.6MAX
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2SC1708A
2SC1708A
150MHz
270Hz
X10-3
2SC1708
2SC170
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2SC2312
Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
Text: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating
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2SC2312
27MHz
27MHz,
-30dB
-62dB
-65dB.
2SC2312
100mA
27mhz transistor
27mhz rf ic
A7 NPN EPITAXIAL
A7 transistor
transistor A7
RF POWER TRANSISTOR
npn epitaxial planar high voltage transistor
FET Transistor Structure
mitsubishi vcb
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2sa1929
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1929 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Mitsubishi 2SA1929 is a silicon PNP epitaxial type transistor. It is designed for
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2SA1929
2SA1929
-100V
300mA,
100Hz)
110mV
270Hz
X10-3
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2sa1368
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1368 FOR HIGH VOLTAGE DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1368 is a silicon PNP epitaxial type transistor. It designed with OUTLINE DRAWING umt mm high collector dissipation, high voltage.
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2SA1368
2SA1368
2SC3438.
-800mA)
130MHz
500mW
SC-62
Ta-25-C
-25VA
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