NTF2955
Abstract: NTF2955T1 NTF2955T3 50Vds
Text: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes http://onsemi.com Applications • • • • Power Supplies PWM Motor Control Converters
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NTF2955
OT-223
NTF2955/D
NTF2955
NTF2955T1
NTF2955T3
50Vds
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2955 sot223
Abstract: NTF2955 NTF2955T1 NTF2955T3 MJ 2955 data 2955 SOT-223 P-channel sot-223
Text: NTF2955 Power MOSFET −60 V, 2.4 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes http://onsemi.com Applications • • • • Power Supplies PWM Motor Control Converters
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NTF2955
OT-223
NTF2955/D
2955 sot223
NTF2955
NTF2955T1
NTF2955T3
MJ 2955 data
2955 SOT-223
P-channel sot-223
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK03L2DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0779EJ0110 Power Switching Rev.1.10 May 30, 2012 Features • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
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RJK03L2DNS
R07DS0779EJ0110
PWSN0008JB-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK03L2DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0779EJ0110 Power Switching Rev.1.10 May 30, 2012 Features • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
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RJK03L2DNS
R07DS0779EJ0110
PWSN0008JB-A
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2955G
Abstract: NTF2955T1G NTF2955 NTF2955T1
Text: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes • Pb−Free Package is Available http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX −60 V
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NTF2955
OT-223
NTF2955/D
2955G
NTF2955T1G
NTF2955
NTF2955T1
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VND5T016
Abstract: No abstract text available
Text: VND5T016ASP-E Double channel high side driver with analog CurrentSense for 24 V automotive applications Datasheet − production data Features Max transient supply voltage VCC 58 V Operating voltage range VCC 8 to 36 V Typ ON-state resistance per ch. RON
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VND5T016ASP-E
PowerSO-16
2002/95/EC
VND5T016
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VND5T016A
Abstract: VND5T016ASP-E
Text: VND5T016ASP-E Double channel high side driver with analog CurrentSense for 24 V automotive applications Datasheet − production data Features Max transient supply voltage VCC 58 V Operating voltage range VCC 8 to 36 V Typ ON-state resistance per ch. RON
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VND5T016ASP-E
PowerSO-16
2002/95/EC
VND5T016A
VND5T016ASP-E
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Untitled
Abstract: No abstract text available
Text: N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 40 A, 17 mΩ Features General Description Shielded Gate MOSFET Technology High performance technology for extremely low rDS on This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that
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V753
Abstract: FDMS86200DC
Text: FDMS86200DC N-Channel Dual CoolTM Power Trench MOSFET 150 V, 28 A, 17 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package
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FDMS86200DC
FDMS86200DC
V753
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Untitled
Abstract: No abstract text available
Text: FDMS86200DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 28 A, 17 mΩ Features General Description Shielded Gate MOSFET Technology High performance technology for extremely low rDS on This N-Channel MOSFET is produced using Fairchild
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FDMS86200DC
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMFT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2955E Motorola Preferred Device SOT–223 for Surface Mount TMOS MEDIUM POWER FET 1.2 AMP
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MMFT2955E/D
MMFT2955E
MMFT2955E/D*
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NT 2955 ON transistor
Abstract: Marking 2955 MMFT2955ET1 fr 2955 2N3904 AN569 MMFT2955E MMFT2955ET3 SMD310 2955 DPAK
Text: MOTOROLA Order this document by MMFT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2955E Motorola Preferred Device SOT–223 for Surface Mount TMOS MEDIUM POWER FET 1.2 AMP
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MMFT2955E/D
MMFT2955E
NT 2955 ON transistor
Marking 2955
MMFT2955ET1
fr 2955
2N3904
AN569
MMFT2955E
MMFT2955ET3
SMD310
2955 DPAK
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BHC ALS 20a
Abstract: BHC Aerovox BHC Aerovox ALS10 BHC ALS capacitor ALS29 ALS21 aerovox bhc alp 20a BHC Aerovox ALP20 aerovox application notes TD003 BHC AEROVOX ALC20
Text: INDEX REFERENCE DATA Quick reference guide to Product Range . 2 TECHNICAL DATA Capacitor Construction . 3 Manufacturing Process . 4 Electrical Characteristics . 5-7
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ALS20/21
ALS27/29
ALS30/31
ALS40/41
ALS60/61
BHC ALS 20a
BHC Aerovox
BHC Aerovox ALS10
BHC ALS capacitor
ALS29
ALS21 aerovox
bhc alp 20a
BHC Aerovox ALP20
aerovox application notes TD003
BHC AEROVOX ALC20
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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transistor mj 3055
Abstract: d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data
Text: MOTOROLA Order this document by MJ D2955/D SEMICONDUCTOR TECHNICAL DATA PNP M JD 2955 Com plem entary Power Transistors NPN M JD 3055 DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • •
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D2955/D
MJE2955
MJE3055
transistor mj 3055
d2955
transistor Amp 3055
Motorola transistors MJE3055 TO 127
mje3055 127 case data
Motorola transistors MJE3055
Motorola transistors MJE2955
transistor 30 j 127
L 3055 motorola
mje2955 data
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM This advanced E -F E T is a TMOS medium power MOSFET
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OT-223
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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Marking 2955
Abstract: MMFT2955ET1 MMFT2955E 2955 mosfet
Text: MOTOROLA O rder this docum ent by M M FT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount This advanced E -F E T is a TM O S medium pow er M O SFET designed to withstand high energy in the avalanche and com m uta
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FT2955E/D
OT-223
318E-04
O-261AA
Marking 2955
MMFT2955ET1
MMFT2955E
2955 mosfet
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NT 2955 ON transistor
Abstract: Marking 2955 transistor k 4212 fet FT2955E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M edium P o w er Field E ffe c t T ran sisto r P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount M M FT2955E M o to ro la P re fe rre d D e v ic e TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM
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OT-223
FT2955E
NT 2955 ON transistor
Marking 2955
transistor k 4212 fet
FT2955E
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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diac D30
Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
Text: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED
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OT-23
C-120,
conventN1711
2N1893
2N2102
2N2218A
2N2219A
2N3019
2N3503
2N3700
diac D30
db3 diac
bc 9013
marking 4d NPN
ZN 5551 diode
DIAC DB3 EQUIVALENT
BZXS4C24V
8Z-2
9014 sot-23
ZT 5551
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HBF4727A
Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product
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IFR 840
Abstract: LCD display jhd 2060 JRC jrc 2740 izuum lcd jhd 4*20 COH10 JHD LCD jrc 2340 jrc 4555
Text: N J U 6 4 6 1 1 2 tir 2 i r 7 - * « ñ t l f t K » h 7 M J «j 5 7, f» □ - ^ K 9 - í / t • « 5 NJU6461I* X 3 V * M ^ 1 2 « t2 W s W h iW a C O t lW T IB B jT S LCD3JHJ-5K 5-fir 7?, Í ’ » r - * W 5 , 7 'U - J 'JÖ /uC R SälSH lK. 0 7 h V * t 5 W i? l> -*R O M /R A M & tfiÍÍÍÍJE lD /W ' jW 5-ÍH* «
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NJU6461
NJU6461I*
NJU6461XC
NJU6461T-*
-C0M15
IFR 840
LCD display jhd
2060 JRC
jrc 2740
izuum
lcd jhd 4*20
COH10
JHD LCD
jrc 2340
jrc 4555
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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OD-80
OD-323
OT-23
OT-89
OT-143
OT-223
OT-323
TRIAC 97A6
S0805BH
13003 TRANSISTOR TO220 equivalent
triacs bt 804 600v
Triac bt 808 600C
Diode SOT-23 marking 15d
zener diode 1N PH 48
6Bs smd transistor
Z0409MF equivalent
BT 808 600C
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