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    MJ 545 TRANSISTOR Search Results

    MJ 545 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    MJ 545 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRG4MC50U

    Abstract: No abstract text available
    Text: PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency


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    -94273A IRG4MC50U O-254AA. MIL-PRF-19500 IRG4MC50U PDF

    IRG4MC40U

    Abstract: No abstract text available
    Text: PD -94305 IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • • • • Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 3kHz - 40kHz, > 200kHz in Resonent Mode • High Operating Frequency


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    IRG4MC40U 40kHz, 200kHz MIL-PRF-19500 IRG4MC40U PDF

    IRG4MC50F

    Abstract: No abstract text available
    Text: PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses


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    -94274A IRG4MC50F O-254AA. MIL-PRF-19500 IRG4MC50F PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency


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    -94273A IRG4MC50U O-254AA. MIL-PRF-19500 PDF

    IRG4MC30F

    Abstract: No abstract text available
    Text: PD -94313C IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses


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    -94313C IRG4MC30F O-254AA. MIL-PRF-19500 IRG4MC30F PDF

    IRG4MC40U

    Abstract: No abstract text available
    Text: PD -94305D IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 8kHz - 40kHz, > 200kHz in Resonent Mode • High Operating Frequency


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    -94305D IRG4MC40U 40kHz, 200kHz O-254AA. MIL-PRF-19500 IRG4MC40U PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -94305A IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • • • • Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 8kHz - 40kHz, > 200kHz in Resonent Mode • High Operating Frequency


    Original
    -94305A IRG4MC40U 40kHz, 200kHz O-254AA. MIL-PRF-19500 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -94313C IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses


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    -94313C IRG4MC30F O-254AA. MIL-PRF-19500 PDF

    IRG4MC30F

    Abstract: No abstract text available
    Text: PD -94313B IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses


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    -94313B IRG4MC30F O-254AA. MIL-PRF-19500 IRG4MC30F PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses


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    -94274A IRG4MC50F O-254AA. MIL-PRF-19500 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -94313 IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses


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    IRG4MC30F O-254AA. MIL-PRF-19500 PDF

    TRANSISTOR 545

    Abstract: IRG4MC50U
    Text: PD -94273 IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency


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    IRG4MC50U O-254AA MIL-PRF-19500 TRANSISTOR 545 IRG4MC50U PDF

    TO-254AA Package

    Abstract: IRG4MC50F
    Text: PD -94274 IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses


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    IRG4MC50F O-254AA MIL-PRF-19500 TO-254AA Package IRG4MC50F PDF

    bipolar transistor td tr ts tf

    Abstract: IRF 260 N IRGMC30F
    Text: PD -90714B IRGMC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses


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    -90714B IRGMC30F O-254AA. MIL-PRF-19500 bipolar transistor td tr ts tf IRF 260 N IRGMC30F PDF

    IRGMC40F

    Abstract: bipolar transistor td tr ts tf
    Text: PD -90716B IRGMC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses


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    -90716B IRGMC40F O-254AA. MIL-PRF-19500 IRGMC40F bipolar transistor td tr ts tf PDF

    IRFM360

    Abstract: No abstract text available
    Text: PD - 90712B POWER MOSFET THRU-HOLE TO-254AA IRFM360 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM360 0.20 Ω 23A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    90712B O-254AA) IRFM360 O-254AA. MIL-PRF-19500 IRFM360 PDF

    IRGMC40U

    Abstract: No abstract text available
    Text: PD -90717B IRGMC40U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses


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    -90717B IRGMC40U O-254AA. MIL-PRF-19500 IRGMC40U PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.027 Ω IRFM054 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    90709B O-254AA) IRFM054 O-254AA. MIL-PRF-19500 PDF

    IRFM460

    Abstract: No abstract text available
    Text: PD - 90727B POWER MOSFET THRU-HOLE TO-254AA IRFM460 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM460 0.27 Ω 19A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    90727B O-254AA) IRFM460 O-254AA. MIL-PRF-19500 IRFM460 PDF

    IRF 260 N

    Abstract: MOSFET 1000v 30a IRGMC50F
    Text: PD -90718B IRGMC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses


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    -90718B IRGMC50F O-254AA. MIL-PRF-19500 IRF 260 N MOSFET 1000v 30a IRGMC50F PDF

    IRFM044

    Abstract: No abstract text available
    Text: PD - 90708B POWER MOSFET THRU-HOLE TO-254AA IRFM044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) IRFM044 0.04 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    90708B O-254AA) IRFM044 O-254AA. MIL-PRF-19500 IRFM044 PDF

    IRGMC50U

    Abstract: No abstract text available
    Text: PD -90719B IRGMC50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses


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    -90719B IRGMC50U O-254AA. MIL-PRF-19500 IRGMC50U PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 90710B POWER MOSFET THRU-HOLE TO-254AA IRFMG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    90710B O-254AA) IRFMG40 O-254AA. MIL-PRF-19500 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 90708B POWER MOSFET THRU-HOLE TO-254AA IRFM044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) IRFM044 0.04 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original
    90708B O-254AA) IRFM044 O-254AA. MIL-PRF-19500 PDF