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    MJ411 TRANSISTOR Search Results

    MJ411 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MJ411 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC901A

    Abstract: BUS21 BUW41
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD r (CE)sat 'CBO Max hFE «T ON) Min (Hz) Max (A) Max (s) Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 -10 . . -15 . . . 20


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    PDF 2N5239 SK3268 UPT523 2N3584 SDT4903 2SC901A 2SC558 BUS21 BUW41

    BU108

    Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS


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    PDF 2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801

    BU108

    Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A


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    PDF BUV20 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC194 transistor Bc 574 2SC1419 BU326 BU100

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


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    PDF Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033

    transistor MJ2501

    Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc


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    PDF MJ413 MJ423 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C transistor MJ2501 BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100

    automotive ignition tip162

    Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —


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    PDF BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000

    2SC1419

    Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.


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    PDF MJE350 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SC1419 TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108

    Motorola case 77

    Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc


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    PDF MJE200* MJE210* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola case 77 2N3055 BU108 2sc15 bdw93c applications BU326 BU100

    2SA1046

    Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


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    PDF BD437 BD441. BD438 BD440 BD442 TIP73B TIP74 TIP74A TIP74B TIP75 2SA1046 BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903

    2SC124

    Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS


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    PDF 2N5191, 2N5192 2N5194 2N5195* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC124 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100

    electronic ballast with MJE13003

    Abstract: BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS The BUD43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light


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    PDF BUD43B BUD43B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C electronic ballast with MJE13003 BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100

    2N5037

    Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi


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    PDF BD808 BD810* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N5037 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251

    c 3421 transistor

    Abstract: BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Horizontal Deflection Transistor . . . designed for use in televisions. • • • • Collector–Emitter Voltages VCES 1500 Volts Fast Switching — 400 ns Typical Fall Time Low Thermal Resistance 1_C/W Increased Reliability


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    PDF BU208A TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 c 3421 transistor BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA

    MJ15003 300 watts amplifier

    Abstract: ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High Voltage Power Transistors MJD340* PNP MJD350* Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. *Motorola Preferred Device DPAK For Surface Mount Applications


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    PDF MJE340 MJE350 MJD340* MJD350* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJ15003 300 watts amplifier ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419

    mj411 transistor

    Abstract: MJ410 MJ411 of IC 4151 AN-4151
    Text: MJ410 SILICON MJ411 HIGH VOLTAGE. NPN SILICON TRANSISTORS 5 AMPERE . . . designed for medium to high voltage inverters, converters, regulators and sw itching circuits. • High Collector-Em itter Voltage — POWER TRANSISTORS NPN SILICON V c E O * 2 0 0 V o lts - M J410


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    PDF MJ410 MJ411 MJ410 MJ410' MJ410â MJ411- mj411 transistor MJ411 of IC 4151 AN-4151

    transistor j411

    Abstract: MJ411 J410 mj411 transistor
    Text: MOTOROLA SC XSTRS/R F H E D | b3b73S>. D O i l - lb ? 0 | / -/ J V J MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O L T A G E NPN SILICON T R AN SISTO R S 5 AM PERE . . . designed for medium to high voltage inverters, converters, regulators and switching circuits.


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    PDF b3b73S> transistor j411 MJ411 J410 mj411 transistor

    MJ3029

    Abstract: MJ3011 MJ7261 MJ9000 2N3902 MJ3010 MJ411 2N5157 2N6307 Motorola MJ-43
    Text: MOTOROL A SC {D IODES/OPT O} 6367255 3M MOTOROLA SC DE |t.3b?5S5 D037TSS CDIODES/OPTO 34C SILICON POWER TRANSISTOR DICE continued) 37955 T '3 3 2C6545 DIE NO. — NPN LINE SOURCE — PL500.366 This die provides performance equal to or better than that of


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    PDF D037TSS PL500 2C6545 2N3902 2N5157 2N5241 2N6306 2N6307 2N6308 2N6544 MJ3029 MJ3011 MJ7261 MJ9000 MJ3010 MJ411 2N6307 Motorola MJ-43

    mj 13003

    Abstract: transistor MJ 13009 transistor MJ 13003 transistor MJ 13007 MJE13000 mj 13002 mj 13007 MJE13000 series 13002 and 13003 power transistor mj 13009
    Text: o lYSajor Source for ¡yPI\l High Voltage Power Transistors in TO-3 and T o -220 Case Outline Semiconductor Technology, Inc., in an effort to enhance the most complete High Voltage Transistor product line in the industry, is complimenting the High Voltage Transistor product


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    PDF T0-220 MJE13000 MJ410 STI-410 MJ411 STI-411 MJ413 STI-413 MJ423 mj 13003 transistor MJ 13009 transistor MJ 13003 transistor MJ 13007 mj 13002 mj 13007 MJE13000 series 13002 and 13003 power transistor mj 13009

    transistor 5609

    Abstract: 5609 5609 transistor MJ411 CCC411 MJ410
    Text: 6115950 M ÌCROSEMI CORP/POWER 0 2E DE DE IhllSTSO 00502 DDODSGa 3 D 7- J . CCC411 3.5 A, 300 V, NPN Power Transistor Chip •Triple Diffused, Glass Passivated Mesa TECHNOLOGY .150" 3.8mm ■Contact Metallization: Base and emitter-aluminum Collector (Al-Ti-Ni-Au)


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    PDF CCC411 emitter-10-mil thickness-10 PTC410/MJ410 PTC411/MJ411 transistor 5609 5609 5609 transistor MJ411 CCC411 MJ410

    bu800

    Abstract: BU500 MJ12004 2N3448 BU208A MJ16024 BU205 2N3447 mj15011 MJ8503
    Text: POWER TRANSISTORS — BIPOLAR M ETAL TO-204AA Formerly TO-3 CASE 11-01, 11-3 — 40 mil pins CASE 1-04, 1-05 — 40 mil pins MODIFIED TO-3 CASE 197-01 — 60 mil pins S T Y L E 1: PIN 1. 2. CASE. BASE EM ITTER C O LLEC TO R R e sistiv e Sw itching lcCont


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    PDF MJ8500 BU204 BU205 2N4901 2N4902 2N4903 MJ410 MJ411 MJ16002 MJ16004 bu800 BU500 MJ12004 2N3448 BU208A MJ16024 BU205 2N3447 mj15011 MJ8503

    BUT16

    Abstract: MJ12005 MJ4247 BU800 MJ423 MJ-4247 MJ10011 BDX66 MOTOROLA mj6503 motorola MJ4237
    Text: POWER TRANSISTORS — BIPOLAR METAL TO-204AA Formerly TO-3 CA SE 11-01, 11-3 — 40 mil pins CASE 1-04, 1-05 — 40 mil pins M O D IFIE D TO -3 CASE 197-01 — 60 mil pins STYLE 1: PIN 1. 2. C A SE. BASE EM ITTER C O LLE C T O R R e s is tiv e S w itc h in g


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    PDF MJ8500 BU204 BU205 2N4901 2N4902 2N4903 MJ410 MJ411 MJ16002 MJ16004 BUT16 MJ12005 MJ4247 BU800 MJ423 MJ-4247 MJ10011 BDX66 MOTOROLA mj6503 motorola MJ4237

    mj411 transistor

    Abstract: MJ8501 MJ3029 transistor selection guide MJ12003
    Text: M O T O R O L A SC {T E L E C O M } 14E D | L3L.72S3 □□fllSQfl S | Assuming Iei — Ici and Ie2 — Ic2 , the collector current mismatch is given by, • IC2 - /VzWVA Ici la T-90-10 _ \ R eM R e / V2 — V i ^V2j V2 ~ “ AV _ V2 418 = (4.19) and, percent collector current mismatch =


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    PDF T-90-10 mj411 transistor MJ8501 MJ3029 transistor selection guide MJ12003

    MJE520

    Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
    Text: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic


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    PDF -204AA -204AE T0-204A 97A-02 O-205AD BUS51 BUV21 BUV11 2N6249 BUX41 MJE520 bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492